专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06289071B1 Positron source, method of preparing the same and automated system for supplying the same 失效
标题翻译：正电子源，准备相同的自动化系统的方法
公开(公告)号：US06289071B1
公开(公告)日：2001-09-11
申请号：US09388060
申请日：1999-09-01
申请人： Ichiro Fujiwara , Yoshiko Ito , Ren Iwata , Toshio Hyodo , Yasushige Yano , Akira Goto , Yuji Ikegami , Yoshio Nomiya
发明人： Ichiro Fujiwara , Yoshiko Ito , Ren Iwata , Toshio Hyodo , Yasushige Yano , Akira Goto , Yuji Ikegami , Yoshio Nomiya
IPC分类号： G21G406
CPC分类号： G21G1/10
摘要： The present invention provides a positron source essentially consisting of a carbon member having 18F bound onto the surface thereof, a method of preparing the same, and an automated system for supplying the same. In the present invention, the positron source is prepared by irradiating a solution containing both H218O and a small amount of natural fluorine ions with a beam of charged particles to generate 18F, and then passing an electric current through the solution using a carbon member 40 as an anode to cause to bind the generated 18F onto the surface of the carbon member.
摘要翻译：本发明提供一种正电子源，其基本上由具有18F结合到其表面上的碳构件，其制备方法和用于提供该碳材料的自动化系统组成。在本发明中，正电子源通过用带有电荷的粒子束照射含有H218O和少量天然氟离子的溶液来制造18F，然后使用碳构件40将电流通过溶液，作为使产生的18F结合到碳构件的表面上的阳极。

2. 发明授权

US06483118B2 Positron source, method of preparing the same, and automated system for supplying the same 失效
标题翻译：正电子源，制备方法以及供应相同的自动化系统
公开(公告)号：US06483118B2
公开(公告)日：2002-11-19
申请号：US09908158
申请日：2001-07-19
申请人： Ichiro Fujiwara , Yoshiko Ito , Ren Iwata , Toshio Hyodo , Yasushige Yano , Akira Goto , Yuji Ikegami , Yoshio Nomiya
发明人： Ichiro Fujiwara , Yoshiko Ito , Ren Iwata , Toshio Hyodo , Yasushige Yano , Akira Goto , Yuji Ikegami , Yoshio Nomiya
IPC分类号： H01J37252
CPC分类号： G21G1/10
摘要： The present invention provides a positron source essentially consisting of a carbon member having 18F bound onto the surface thereof, a method of a preparing the same, and an automated system for supplying the same. In the present invention, the positron source is prepared by irradiating a solution 35 containing both H218O and a small amount of natural fluorine ions with a beam of charged particles to generate 18F, and then passing an electric current through the solution 35 using a carbon member 40 as an anode to cause to bind the generated 18F onto the surface of the carbon member 40.
摘要翻译：本发明提供了一种正电子源，其基本上由具有18F结合到其表面上的碳构件，其制备方法和用于供给它的自动化系统组成。在本发明中，通过用含有粒子的束照射含有H 2 18 O和少量天然氟离子的溶液35以产生18F，然后使用碳成员使电流通过溶液35来制备正电子源 40作为负极将所生成的18F结合到碳构件40的表面上。

3. 发明申请

US20150056270A1 METHOD FOR PRODUCING LIPOSOME ENCAPSULATING PACLITAXEL MONOGLYCOSIDE AND/OR DOCETAXEL MONOGLYCOSIDE 审中-公开
标题翻译：生产脂质体包封单胺氧化物和/或单甲氧基苯甲酸酯的方法
公开(公告)号：US20150056270A1
公开(公告)日：2015-02-26
申请号：US14386855
申请日：2013-03-22
申请人： Hiroki HAMADA , Ichiro FUJIWARA , ENSUIKO SUGAR REFINING CO., LTD. , NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY
发明人： Hiroki Hamada , Ichiro Fujiwara , Masaharu Seno , Tomonari Kasai , Tsukasa Shigehiro , Masaharu Murakami , Katsuhiko Mikuni
IPC分类号： A61K47/48 , A61K31/337
摘要： In order to reduce the side effects of paclitaxel derivatives having excellent anti-cancer effects, an attempt was made to produce a liposome encapsulating paclitaxel derivatives such as paclitaxel monoglycosides and docetaxel monoglycosides. However, the introduction efficiency of paclitaxel derivatives, etc., into a liposome was poor, and this technique was not developed to a practical level. The present invention provides a method for producing a liposome encapsulating a paclitaxel monoglycoside and/or a docetaxel monoglycoside, and having an antibody specifically recognizing a cancer cell, the method comprising a step of bringing a liposome encapsulating a polyoxyethylene ester derivative, a lower alcohol, and a buffer or water into contact with a solution in which a paclitaxel monoglycoside and/or a docetaxel monoglycoside is dissolved in an alkylene glycol-containing buffer or water.
摘要翻译：为了减少具有优异的抗癌作用的紫杉醇衍生物的副作用，尝试制备包封紫杉醇衍生物如紫杉醇单糖苷和多西紫杉醇单糖苷的脂质体。然而，紫杉醇衍生物等在脂质体中的引入效率差，这种技术尚未发展到实用水平。本发明提供一种包装紫杉醇单糖苷和/或多西紫杉醇单糖苷的脂质体的制造方法，其具有特异性识别癌细胞的抗体，所述方法包括使脂质体包封聚氧乙烯酯衍生物，低级醇，以及缓冲液或水与其中将紫杉醇单糖苷和/或多西紫杉醇单糖苷溶解在含亚烷基二醇的缓冲液或水中的溶液接触。

4. 发明授权

US07142451B2 Nonvolatile semiconductor memory apparatus and method of producing the same 失效
公开(公告)号：US07142451B2
公开(公告)日：2006-11-28
申请号：US11096017
申请日：2005-04-01
申请人： Ichiro Fujiwara , Hiromi Nobukata
发明人： Ichiro Fujiwara , Hiromi Nobukata
IPC分类号： G11C16/06
CPC分类号： H01L27/11568 , G11C16/0466 , G11C16/0491 , H01L27/105 , H01L27/115 , H01L27/11573 , H01L29/42332 , H01L29/792
摘要： A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg−Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg−Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.

5. 发明授权

US07088622B2 Nonvolatile semiconductor memory apparatus and method of producing the same 失效
公开(公告)号：US07088622B2
公开(公告)日：2006-08-08
申请号：US11095798
申请日：2005-04-01
申请人： Ichiro Fujiwara , Hiromi Nobukata
发明人： Ichiro Fujiwara , Hiromi Nobukata
IPC分类号： G11C16/00
CPC分类号： H01L27/11568 , G11C16/0466 , G11C16/0491 , H01L27/105 , H01L27/115 , H01L27/11573 , H01L29/42332 , H01L29/792
摘要： A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg-Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg-Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.

6. 发明授权

US07012329B2 Memory transistor array utilizing insulated word lines as gate electrodes 失效
公开(公告)号：US07012329B2
公开(公告)日：2006-03-14
申请号：US11098503
申请日：2005-04-05
申请人： Kazumasa Nomoto , Toshio Kobayashi , Akihiro Nakamura , Ichiro Fujiwara , Toshio Terano
发明人： Kazumasa Nomoto , Toshio Kobayashi , Akihiro Nakamura , Ichiro Fujiwara , Toshio Terano
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.

7. 发明授权

US06872614B2 Nonvolatile semiconductor memory device and process of production and write method thereof 有权
标题翻译：非易失性半导体存储器件及其制作和写入方法
公开(公告)号：US06872614B2
公开(公告)日：2005-03-29
申请号：US10401588
申请日：2003-03-31
申请人： Ichiro Fujiwara
发明人： Ichiro Fujiwara
IPC分类号： H01L21/8247 , B82B1/00 , G11C16/02 , G11C16/04 , G11C16/10 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/788 , H01L29/792 , H01L21/8234
CPC分类号： H01L21/28202 , B82Y10/00 , G11C16/0466 , G11C16/10 , G11C16/30 , H01L21/28194 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/513 , H01L29/518 , H01L29/7883 , H01L29/7888 , H01L29/792
摘要： A nonvolatile semiconductor memory device featuring a reducing operating voltage while maintaining a good disturbance characteristic and high speed in a write operation, including a gate insulating film and gate electrode stacked on a channel forming region of a semiconductor provided on the surface of a substrate and planarly dispersed charge storing means such as carrier traps in a nitride film or near the interface with the top insulating film, provided in the gate insulating film, the gate insulating film including an FN tunnel film having a dielectric constant larger than that of a silicon oxide film and exhibiting an FN electroconductivity, whereby the thickness of the gate insulating film, converted to that of a silicon oxide film, can be reduced and the voltage can be reduced. Further, to reduce the operation voltage, a pull-up electrode is provided near the gate electrode through the dielectric film and a pull-up gate bias circuit supplying a predetermined voltage to the same and boost the gate electrode by capacity coupling.
摘要翻译：一种非易失性半导体存储器件，其具有降低工作电压，同时在写入操作中保持良好的干扰特性和高速度，包括堆叠在设置在衬底表面上的半导体的沟道形成区域上的栅极绝缘膜和栅电极，并且平面地分散的电荷存储装置，例如在栅极绝缘膜中设置在氮化物膜中或与顶部绝缘膜的界面附近的载流子阱，栅极绝缘膜包括介电常数大于氧化硅膜的介电常数的FN隧道膜并且具有FN导电性，由此可以减小转换为氧化硅膜的栅极绝缘膜的厚度，并且可以降低电压。此外，为了降低工作电压，通过电介质膜设置在栅电极附近的上拉电极和向其提供预定电压的上拉栅极偏置电路，并通过电容耦合升压栅电极。

8. 发明授权

US06721205B2 Nonvolatile semiconductor memory device and methods for operating and producing the same 失效
标题翻译：非易失性半导体存储器件及其操作和制造方法
公开(公告)号：US06721205B2
公开(公告)日：2004-04-13
申请号：US09735938
申请日：2000-12-14
申请人： Toshio Kobayashi , Hiroyuki Moriya , Ichiro Fujiwara
发明人： Toshio Kobayashi , Hiroyuki Moriya , Ichiro Fujiwara
IPC分类号： G11C1604
CPC分类号： H01L27/11521 , G11C16/0475 , G11C16/0491 , G11C16/10 , H01L27/115 , H01L29/66825 , H01L29/7923
摘要： A nonvolatile semiconductor memory device with high reliability (free from troubles in storing data), a high charge injection efficiency, and enabling parallel operation in a VG cell array, includes channel forming regions, a charge storing film which consists of stacked dielectric films and is capable of storing a charge, two storage portions forming parts of the charge storing film and overlapping the channel forming regions, a single layer dielectric film between the storage portions and in contact with the channel forming region, a control gate electrode on the single layer dielectric film, and a memory gate electrode on the storage portions.
摘要翻译：具有高可靠性（不存储数据的麻烦），高电荷注入效率和在VG电池阵列中实现并行操作的非易失性半导体存储器件包括沟道形成区域，电荷存储膜，其由堆叠的电介质膜组成，并且是能够存储电荷的两个存储部分，形成电荷存储膜的部分并且与沟道形成区重叠的两个存储部分，在存储部分之间并与沟道形成区域接触的单层电介质膜，单层电介质上的控制栅电极膜和存储部分上的存储栅电极。

9. 发明授权

US5999444A Nonvolatile semiconductor memory device and writing and erasing method of the same 有权
标题翻译：非易失性半导体存储器件及其写入和擦除方法相同
公开(公告)号：US5999444A
公开(公告)日：1999-12-07
申请号：US144199
申请日：1998-08-31
申请人： Ichiro Fujiwara , Yutaka Hayashi
发明人： Ichiro Fujiwara , Yutaka Hayashi
IPC分类号： H01L21/8247 , B82B1/00 , G11C16/10 , H01L27/115 , H01L29/788 , H01L29/792 , G11C11/34
CPC分类号： G11C16/3427 , G11C16/10
摘要： A nonvolatile semiconductor memory device and writing method of the same having a planarly dispersed charge storing means, which improve the programming disturbance characteristic, wherein gate electrodes of a plurality of memory elements are connected to a plurality of word lines, source regions or drain regions are connected with a common line (for example, a bit line or a source line) which crosses the word lines in an electrically insulated state, and the memory device includes a write inhibit voltage supplying means for supplying a source region and/or drain region of a memory element connected to the selected word line with a reverse bias voltage placing the source/drain region in a reverse bias state to the channel forming region via the common line and a non-selected word line biasing means for supplying a non-selected word line with a voltage in the polarity placing the non-selected word, line in a reverse bias state to the channel forming region.
摘要翻译：一种非易失性半导体存储器件及其写入方法，具有平面分散的电荷存储装置，其改善编程干扰特性，其中多个存储元件的栅电极连接到多个字线，源极区或漏极区，与在电绝缘状态下与字线交叉的公共线（例如，位线或源极线）连接，并且存储器件包括用于提供源极区和/或漏极区的写禁止电压提供装置连接到所选字线的存储器元件，具有反向偏置电压，通过公共线将反向偏置状态的源极/漏极区域设置到沟道形成区域;以及未选择的字线偏置装置，用于提供未被选择的字以极性的电压放置未选择的字线，以与反向偏置状态的线对齐到通道形成区域。

10. 发明授权

US10682330B2 Method for producing liposome encapsulating paclitaxel monoglycoside and/or docetaxel monoglycoside 有权
公开(公告)号：US10682330B2
公开(公告)日：2020-06-16
申请号：US14386855
申请日：2013-03-22
申请人： ENSUIKO SUGAR REFINING CO., LTD. , Hiroki Hamada , Ichiro Fujiwara , NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY
发明人： Hiroki Hamada , Ichiro Fujiwara , Masaharu Seno , Tomonari Kasai , Tsukasa Shigehiro , Masaharu Murakami , Katsuhiko Mikuni
IPC分类号： A61K31/337 , A61K47/26 , A61K9/127 , A61K31/7048 , C07K16/32 , A61K47/69 , A61K39/00
摘要： In order to reduce the side effects of paclitaxel derivatives having excellent anti-cancer effects, an attempt was made to produce a liposome encapsulating paclitaxel derivatives such as paclitaxel monoglycosides and docetaxel monoglycosides. However, the introduction efficiency of paclitaxel derivatives, etc., into a liposome was poor, and this technique was not developed to a practical level. The present invention provides a method for producing a liposome encapsulating a paclitaxel monoglycoside and/or a docetaxel monoglycoside, and having an antibody specifically recognizing a cancer cell, the method comprising a step of bringing a liposome encapsulating a polyoxyethylene ester derivative, a lower alcohol, and a buffer or water into contact with a solution in which a paclitaxel monoglycoside and/or a docetaxel monoglycoside is dissolved in an alkylene glycol-containing buffer or water.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式