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    • 7. 发明授权
    • Stress relief matrix for integrated circuit packaging
    • 用于集成电路封装的应力消除矩阵
    • US6096578A
    • 2000-08-01
    • US234689
    • 1999-01-21
    • Elizabeth G. JacobsKatherine G. Heinen
    • Elizabeth G. JacobsKatherine G. Heinen
    • H01L21/56H01L21/44
    • H01L21/563H01L24/29H01L2224/29399H01L2224/73203H01L2924/01029H01L2924/01078H01L2924/01079H01L2924/01087H01L2924/14
    • An integrated circuit package (10, 40) may comprise an integrated circuit chip (12, 42) and a substrate (14, 44) opposite the chip (12, 42). A connector (20, 52) may be disposed between the chip (12, 42) and the substrate (14, 44) to electrically couple the chip (12, 42) and the substrate (14, 44). A matrix (24, 50) may be disposed about the connector (20, 52). The matrix (24, 50) may comprise a blend of liquid crystal polymer and thermoplastic polymer. The matrix (24, 50) may have a coefficient of thermal expansion in a direction (26, 56) substantially parallel to the chip (12, 42) and the substrate (14, 44) that is greater than that of the chip (12, 42) and that is less than that of the substrate (14, 44) in the substantially parallel direction (26, 56). In a direction (28, 58) normal to the substantially parallel direction (26, 56), the matrix (24, 50) may have a coefficient of thermal expansion that is approximately that of the connector (20, 52).
    • 集成电路封装(10,40)可以包括集成电路芯片(12,42)和与芯片(12,42)相对的衬底(14,44)。 连接器(20,52)可以设置在芯片(12,42)和基板(14,44)之间,以电连接芯片(12,42)和基板(14,44)。 矩阵(24,50)可以围绕连接器(20,52)设置。 基质(24,50)可以包括液晶聚合物和热塑性聚合物的共混物。 基体(24,50)可以具有基本上平行于芯片(12,42)的方向(26,56)和大于芯片(12,42)的衬底(14,44)的热膨胀系数 ,42),并且小于基本上平行方向(26,56)上的衬底(14,44)的厚度。 在垂直于大致平行方向(26,56)的方向(28,58)上,矩阵(24,50)的热膨胀系数可以大致为连接器(20,52)的热膨胀系数。
    • 9. 发明授权
    • Wafer-scale assembly of chip-size packages
    • 芯片尺寸封装的晶圆尺寸组装
    • US06730541B2
    • 2004-05-04
    • US09186973
    • 1998-11-05
    • Katherine G. HeinenDarvin R. EdwardsElizabeth G. Jacobs
    • Katherine G. HeinenDarvin R. EdwardsElizabeth G. Jacobs
    • H01L2160
    • H01L21/67144H01L21/67138H01L23/3114H01L23/49816H01L23/49827H01L2224/16H01L2224/274H01L2924/01025H01L2924/01046H01L2924/01078H01L2924/01079H01L2924/01322H01L2924/10253H01L2924/15184H01L2924/15311H01L2924/00
    • A wafer-scale assembly apparatus for integrated circuits and a method for forming the wafer-scale assembly are disclosed. A semiconductor wafer including a plurality of circuits is provided with a plurality of metal contact pads as electrical entry and exit ports. A first wafer-scale patterned polymer film carrying solder balls for each of the contact pads on the wafer is positioned opposite the wafer, and the wafer and the film are aligned. The film is brought into contact with the wafer. Radiant energy in the near infrared spectrum is applied to the backside of the wafer, heating the wafer uniformly and rapidly without moving the semiconductor wafer. Thermal energy is transferred through the wafer to the surface of the wafer and into the solder balls, which reflow onto the contact pads, while the thermal stretching of the polymer film is mechanically compensated. The uniformity of the height of the liquid solder balls is controlled either by mechanical stoppers or by the precision linear motion of motors. After cooling, the solder balls solidify and the first polymer film is removed. The process is repeated for assembling sequentially a wafer-scale patterned interposer overlying all of the solder balls and the wafer and contacting each solder ball with a soldered joint, and a second wafer-scale patterned film carrying solder balls contacting the interposer. In each process, the wafer is heated uniformly and rapidly and without moving it, the alignment is maintained during heating by mechanically compensating for the thermal stretching of the polymer film, and the uniformity of the height of the liquid solder balls is controlled by mechanical stoppers or position closed-loop linear actuators. The second film is removed after cooling. Other embodiments are also disclosed.
    • 公开了用于集成电路的晶片级组装装置和用于形成晶片级组件的方法。 包括多个电路的半导体晶片设置有多个金属接触垫作为电子入口和出口。 承载用于晶片上的每个接触焊盘的焊球的第一晶片级图案化聚合物膜与晶片相对定位,并且晶片和膜对准。 使膜与晶片接触。 将近红外光谱中的辐射能量施加到晶片的背面,均匀且快速地加热晶片而不移动半导体晶片。 热能通过晶片转移到晶片的表面并进入焊球,该焊球回流到接触焊盘上,同时机械补偿聚合物膜的热拉伸。 液体焊球的高度的均匀性由机械塞子或电动机的精密线性运动控制。 冷却后,焊球固化并除去第一聚合物膜。 重复该过程以顺序地组装覆盖所有焊球和晶片的晶片级图案化插层,并使每个焊球与焊接接头接触,以及承载接触插入件的焊球的第二晶片级图案膜。 在每个过程中,均匀且快速地加热晶片并且不移动晶片,在加热期间通过机械地补偿聚合物膜的热拉伸来维持对准,并且液体焊球的高度的均匀性由机械止动器 或定位闭环线性致动器。 冷却后除去第二层膜。 还公开了其他实施例。