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1. 发明申请

US20030118736A1 Organic polymer for anti-reflective coating layer and preparation thereof 失效
标题翻译：用于抗反射涂层的有机聚合物及其制备方法
公开(公告)号：US20030118736A1
公开(公告)日：2003-06-26
申请号：US10293022
申请日：2002-11-12
申请人： Hyundai Electronics Industries Co., Ltd.
发明人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
IPC分类号： C08F004/04 , C07C069/52 , B05D003/02
CPC分类号： C07C69/54 , C07C2603/24 , C08F220/14 , C08F220/18 , C08F220/28
摘要： The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.
摘要翻译：本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。本发明的聚合物在例如使用KrF（248nm）或ArF（193nm）激光器作为光源的亚微光刻工艺中特别有用。本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。本发明的ARC还显着地减少或消除驻波效应和反射性切口。因此，本发明的聚合物可以用于制造适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。此外，本发明的ARC显着提高了这种半导体器件的生产成本。

2. 发明申请

US20020136834A1 Organic anti-reflective polymer and method for manufacturing therof 有权
标题翻译：有机抗反射聚合物及其制造方法
公开(公告)号：US20020136834A1
公开(公告)日：2002-09-26
申请号：US10095417
申请日：2002-03-11
申请人： Hyundai Electronics Industries Co., Ltd.
发明人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
IPC分类号： C08G063/00 , C08G067/00 , C08G069/00 , B05D003/02
CPC分类号： C08F220/34 , C07C251/66 , C08F2220/281 , C08F2220/325 , C08F220/14
摘要： Polymers are disclosed having the following formula 1 or 2: 1 Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1 G, 4 G and 16 G DRAMs and a great improvement in the production yield.
摘要翻译：公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。由于晶片上的较低层的光学性质和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M，1G ，4G和16G DRAM，并且生产产量大大提高。

3. 发明申请

US20020132183A1 Organic anti-reflective coating material and its preparation 审中-公开
标题翻译：有机防反射涂料及其制备方法
公开(公告)号：US20020132183A1
公开(公告)日：2002-09-19
申请号：US10054837
申请日：2002-01-22
申请人： Hyundai Electronics Industries Co., Ltd.
发明人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
IPC分类号： G03F007/00
CPC分类号： C08F20/18 , C07C69/54 , C07C2603/24
摘要： Polymers are provided having the following formula I, II or III: 1 Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore sub substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers. The ARC also eliminates the standing waves and reflective notching due to the optical properties of lower layers on the wafer, and due to the changes in the thickness of the photosensitive film applied thereon. This results in the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices and a great improvement in the production yield.
摘要翻译：提供具有下列式I，II或III的聚合物：本发明的聚合物可用于提供使用248nm KrF，193nm ArF和157nm F2激光的用于亚微光刻工艺的抗反射涂层（ARC）材料。聚合物含有发色团亚取代基，其在对于这种亚微光刻工艺有用的波长处表现出足够的吸光度。 ARC防止半导体器件中的表面或下层的背反射，并且解决了CD被来自这种较低层的衍射和反射光改变的问题。由于晶片上的下层的光学特性，并且由于其上施加的感光膜的厚度的变化，ARC还消除了驻波和反射性凹陷。这导致形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定的超细格局，并且生产产量大大提高

4. 发明申请

US20020120070A1 Anti reflective coating polymers and the preparation method thereof 失效
公开(公告)号：US20020120070A1
公开(公告)日：2002-08-29
申请号：US10015333
申请日：2001-12-11
申请人： Hyundai Electronics Industries Co., Ltd.
发明人： Sung-Eun Hong , Min-Ho Jung , Hyeong-Soo Kim , Ki-Ho Baik
IPC分类号： C08F008/34
CPC分类号： C08F212/14 , C08F8/34 , G03F7/023 , G03F7/091 , C08F12/14 , C08F220/20
摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices.

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