基本信息:
- 专利标题： Organic anti-reflective polymer and method for manufacturing therof
- 专利标题（中）：有机抗反射聚合物及其制造方法
- 申请号：US10095417 申请日：2002-03-11
- 公开(公告)号：US20020136834A1 公开(公告)日：2002-09-26
- 发明人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
- 申请人： Hyundai Electronics Industries Co., Ltd.
- 申请人地址： KR Icheon-shi
- 专利权人： Hyundai Electronics Industries Co., Ltd.
- 当前专利权人： Hyundai Electronics Industries Co., Ltd.
- 当前专利权人地址： KR Icheon-shi
- 优先权： KR99-23382 19990622
- 主分类号： C08G063/00
- IPC分类号： C08G063/00 ; C08G067/00 ; C08G069/00 ; B05D003/02
摘要：
Polymers are disclosed having the following formula 1 or 2: 1 Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1 G, 4 G and 16 G DRAMs and a great improvement in the production yield.
摘要（中）：
公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。 聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。 由于晶片上的较低层的光学性质和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M，1G ，4G和16G DRAM，并且生产产量大大提高。