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    • 2. 发明申请
    • Polymerization process for ionic monomers
    • 离子单体的聚合方法
    • US20020107340A1
    • 2002-08-08
    • US09972260
    • 2001-10-05
    • Krzysztof MatyjaszewskiNicolay Tsarevsky
    • C08F004/04
    • C08F4/40C08F2/10C08F4/00C08F112/08C08F293/005C08F2438/01
    • The present invention describes preparation of nanocomposite particles and structures by polymerizing monomers onto a functional inorganic colloid comprising a polymerization initiation site. The polymerization process is preferably a controlled/living polymerization process, including but not limited to, atom transfer radical polymerization and stable free radical polymerization. The nanocomposite particles can self-organize in solution, on surfaces or in films forming nanocomposite structures. Tethered AB block nanocomposite particles bring size control, solubility control and control over micro- and macro-functionality to the particles. The process may be catalyzed by a transition metal complex which participates in a reversible redox cycle with at least one of the group and a compound having a radically transferable atom or group, to form a nanocomposite particle with a tethered polymer chain. The process may be continued to form tethered copolymer chain. The particle may be silicon based including, for example, silica, silicates and polysilsesquioxane. A nanocomposite structure may be formed by casting, depositing or forming the material including nanocomposite particles.
    • 本发明描述了通过将单体聚合到包含聚合引发位点的官能无机胶体上来制备纳米复合材料颗粒和结构。 聚合方法优选是受控/活性聚合方法,包括但不限于原子转移自由基聚合和稳定的自由基聚合。 纳米复合颗粒可以在溶液,表面或形成纳米复合结构的膜中自组织。 连接的AB嵌段纳米复合颗粒使微粒和微观功能的尺寸控制,溶解度控制和控制。 该方法可以由过渡金属络合物催化,该过渡金属络合物与基团中的至少一个和具有可自由基转移的原子或基团的化合物一起参与可逆的氧化还原循环,以形成具有束缚的聚合物链的纳米复合颗粒。 该方法可以继续形成系链共聚物链。 颗粒可以是硅基,包括例如二氧化硅,硅酸盐和聚倍半硅氧烷。 可以通过铸造,沉积或形成包括纳米复合材料颗粒的材料来形成纳米复合结构。
    • 6. 发明申请
    • Organic polymer for anti-reflective coating layer and preparation thereof
    • 用于抗反射涂层的有机聚合物及其制备方法
    • US20030118736A1
    • 2003-06-26
    • US10293022
    • 2002-11-12
    • Hyundai Electronics Industries Co., Ltd.
    • Min-Ho JungSung-Eun HongKi-Ho Baik
    • C08F004/04C07C069/52B05D003/02
    • C07C69/54C07C2603/24C08F220/14C08F220/18C08F220/28
    • The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.
    • 本发明提供可用作抗反射涂层(ARC)聚合物的聚合物,包含其的ARC组合物,其制备方法及其使用方法。 本发明的聚合物在例如使用KrF(248nm)或ArF(193nm)激光器作为光源的亚微光刻工艺中特别有用。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此,本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此,本发明的聚合物可以用于制造适合于制造64M,256M,1G,4G和16G DRAM半导体器件的稳定超细晶格。 此外,本发明的ARC显着提高了这种半导体器件的生产成本。