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1. 发明授权

US07335455B2 Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same 有权
标题翻译：形成双层抗蚀剂膜的底层的方法和使用其制造半导体器件的方法
公开(公告)号：US07335455B2
公开(公告)日：2008-02-26
申请号：US10787368
申请日：2004-02-26
申请人： Hyun-Woo Kim , Jin Hong , Myoung-Ho Jung , Sang-Gyun Woo
发明人： Hyun-Woo Kim , Jin Hong , Myoung-Ho Jung , Sang-Gyun Woo
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/095 , G03F7/091
摘要： A method of forming an underlayer of a bi-layer resist including forming a blended material by blending a polymer having an aromatic group and a methacrylate polymer, and coating a substrate with the blended material. The blended material coated on the substrate is irradiated to form an underlayer. The polymer having the aromatic group may be a novolac polymer or a naphthalene polymer.
摘要翻译：一种形成双层抗蚀剂的底层的方法，包括通过混合具有芳族基团的聚合物和甲基丙烯酸酯聚合物形成共混材料，并用共混材料涂覆基材。涂布在基材上的混合材料被照射以形成底层。具有芳基的聚合物可以是酚醛清漆聚合物或萘聚合物。

2. 发明申请

US20050233922A1 Cleaning solution and method of cleaning semiconductor devices using the same 审中-公开
标题翻译：清洗液及使用其的半导体器件的清洗方法
公开(公告)号：US20050233922A1
公开(公告)日：2005-10-20
申请号：US11048069
申请日：2005-02-02
申请人： Myoung-Ho Jung , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Bae Jeong , Hyun-Jin Jeong , Jae-Woong Moon
发明人： Myoung-Ho Jung , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Bae Jeong , Hyun-Jin Jeong , Jae-Woong Moon
IPC分类号： G03F7/32 , C11D1/00 , C11D1/28 , C11D1/72 , C11D3/04 , C11D3/20 , C11D3/43 , C11D11/00 , C11D17/08 , G03F7/40 , H01L21/027 , H01L21/304
CPC分类号： G03F7/32 , C11D1/28 , C11D1/72 , C11D3/2006 , C11D3/201 , C11D3/2017 , C11D3/202 , C11D11/0047 , G03F7/322 , G03F7/40 , H01L21/0273
摘要： A cleaning solution for preventing the collapse of photoresist patterns and a method of cleaning a semiconductor device using the cleaning solution; the cleaning solution includes a solvent and a surfactant and has a dynamic surface tension of about 50 dyne/cm or less at about 6 bubbles/seconds when measured by a maximum bubble pressure method. The collapse of the photoresist pattern can be prevented using the cleaning solution when forming minute photoresist patterns having about 100 nm or less pattern width. The cleaning solution containing a surfactant in a high concentration also can be prepared to reduce distribution expenses.
摘要翻译：一种用于防止光致抗蚀剂图案塌陷的清洁溶液和使用该清洁溶液清洁半导体器件的方法; 清洗溶液包括溶剂和表面活性剂，并且当通过最大气泡压力法测量时，以约6个气泡/秒的速度具有约50达因/厘米或更小的动态表面张力。当形成具有约100nm或更少图案宽度的微小光致抗蚀剂图案时，可以使用清洁溶液防止光致抗蚀剂图案的崩溃。含有高浓度表面活性剂的清洗液也可以制备，以减少分配费用。

3. 发明申请

US20060003268A1 Method of forming semiconductor patterns 审中-公开
标题翻译：形成半导体图案的方法
公开(公告)号：US20060003268A1
公开(公告)日：2006-01-05
申请号：US11155341
申请日：2005-06-17
申请人： Jin Hong , Myoung-Ho Jung , Hyun-Woo Kim
发明人： Jin Hong , Myoung-Ho Jung , Hyun-Woo Kim
IPC分类号： G03F7/36
CPC分类号： H01L21/0273 , H01L21/31138 , H01L21/32139 , H01L29/66795 , H01L29/785
摘要： A method of forming a pattern comprises the steps of stacking an inorganic hard mask layer, an organic mask layer, and an anti-reflecting layer on a substrate where a lower layer is formed, forming a photoresist pattern containing silicon on the anti-reflecting layer, performing an O2 plasma ashing to form a conformal layer of an oxide glass on the photoresist pattern containing silicon and to dry etch the anti-reflecting layer and the organic mask layer to form an anti-reflecting pattern and an organic mask pattern, removing the photoresist pattern, the anti-reflecting pattern, and the organic mask pattern, and etching the lower layer using a pattern of the inorganic hard mask layer as an etch mask.
摘要翻译：形成图案的方法包括以下步骤：在形成下层的基板上堆叠无机硬掩模层，有机掩模层和抗反射层，在抗反射层上形成含有硅的光致抗蚀剂图案执行O 2等离子体灰化以在含有硅的光致抗蚀剂图案上形成氧化物玻璃的保形层，并干燥蚀刻抗反射层和有机掩模层以形成抗反射图案和有机掩模图案，去除光致抗蚀剂图案，抗反射图案和有机掩模图案，并且使用无机硬掩模层的图案作为蚀刻掩模蚀刻下层。

4. 发明申请

US20050214694A1 Pattern formation method 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20050214694A1
公开(公告)日：2005-09-29
申请号：US11010602
申请日：2004-12-13
申请人： Jin Hong , Hyun-Woo Kim , Myoung-Ho Jung , Gyung-Jin Min
发明人： Jin Hong , Hyun-Woo Kim , Myoung-Ho Jung , Gyung-Jin Min
IPC分类号： H01L21/3065 , G03F7/00 , H01L21/027 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/0273 , H01L21/0276 , H01L21/3146 , H01L21/32139 , H01L21/76801 , H01L21/76802 , H01L21/76808 , H01L21/76838
摘要： A pattern formation method comprises forming a material layer on a substrate, forming an amorphous carbon layer on the material layer, forming an anti-reflective layer on the amorphous carbon layer, forming a silicon photoresist layer on the anti-reflective layer, forming a silicon photoresist layer pattern by patterning the silicon photoresist layer, etching the anti-reflective layer and the amorphous carbon layer using the silicon photoresist layer pattern as an etch mask to form an amorphous carbon layer pattern, and etching the material layer using the amorphous carbon layer pattern as an etch mask to form a pattern in the material layer.
摘要翻译：图案形成方法包括在基板上形成材料层，在所述材料层上形成无定形碳层，在所述非晶碳层上形成抗反射层，在所述抗反射层上形成硅光致抗蚀剂层，形成硅通过图案化硅光致抗蚀剂层，使用硅光致抗蚀剂层图案蚀刻抗反射层和非晶碳层作为蚀刻掩模以形成无定形碳层图案，并使用无定形碳层图案蚀刻材料层，作为在材料层中形成图案的蚀刻掩模。

5. 发明授权

US07842451B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US07842451B2
公开(公告)日：2010-11-30
申请号：US12511538
申请日：2009-07-29
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

6. 发明授权

US07575855B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US07575855B2
公开(公告)日：2009-08-18
申请号：US11145535
申请日：2005-06-03
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： G03F1/00
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

7. 发明申请

US20090291561A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20090291561A1
公开(公告)日：2009-11-26
申请号：US12511538
申请日：2009-07-29
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

8. 发明申请

US20050282092A1 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US20050282092A1
公开(公告)日：2005-12-22
申请号：US11145535
申请日：2005-06-03
申请人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
发明人： Cha-Won Koh , Sang-Gyun Woo , Gi-Sung Yeo , Myoung-Ho Jung
IPC分类号： G03F7/00 , G03F7/075 , G03F7/11 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/311
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/40 , H01L21/0271 , H01L21/0337 , H01L21/31138 , H01L21/31144
摘要： Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
摘要翻译：公开了形成图案的方法。在第一有机聚合物层上形成第一有机聚合物层，在其上具有下层，然后形成具有部分暴露第一有机聚合物层的开口的第二有机聚合物层。接下来，在第二有机聚合物层上形成含硅聚合物层以覆盖开口。含硅聚合物层被氧化，同时第二有机聚合物层和第一有机聚合物层被氧等离子体灰化，形成具有各向异性形状的图案。使用含硅聚合物层和第一有机聚合物层作为蚀刻掩模蚀刻下层，以形成图案。

9. 发明申请

US20070178391A1 Mask having balance pattern and method of patterning photoresist using the same 审中-公开
标题翻译：具有平衡图案的掩模和使用其形成光致抗蚀剂的方法
公开(公告)号：US20070178391A1
公开(公告)日：2007-08-02
申请号：US11525965
申请日：2006-09-25
申请人： Tae-Young Kim , Sang-Jin Kim , Cha-Won Koh , Sung-Gon Jung , Myoung-Ho Jung , Young-Mi Lee
发明人： Tae-Young Kim , Sang-Jin Kim , Cha-Won Koh , Sung-Gon Jung , Myoung-Ho Jung , Young-Mi Lee
IPC分类号： G03C5/00 , G03F1/00 , G03F9/00
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/80
摘要： A method and mask having balance patterns for reducing and/or preventing chemical flare from occurring in a photoresist between a first mask region and a second mask region. Balance patterns formed on the mask may have a desired and/or predetermined pitch and may be regularly arranged. If the pitch of the balance patterns is equal to or smaller than a threshold value, the balance patterns may not allow the patterns to be transferred onto a photoresist. In addition, the photoresist corresponding to the balance patterns may be either completely removed or completely remain depending on the duty of the balance patterns.
摘要翻译：一种具有用于减少和/或防止在第一掩模区域和第二掩模区域之间的光致抗蚀剂中发生化学闪光的平衡图案的方法和掩模。形成在掩模上的平衡图案可以具有期望的和/或预定的间距，并且可以规则地布置。如果平衡图案的间距等于或小于阈值，则平衡图案可能不允许将图案转印到光致抗蚀剂上。此外，根据平衡图案的占空比，对应于平衡图案的光致抗蚀剂可以完全去除或完全保留。

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