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    • 1. 发明授权
    • Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
    • 通过化学气相沉积形成金属氮化物膜的方法和使用其形成金属接触和半导体器件的电容器的方法
    • US06348376B2
    • 2002-02-19
    • US09765531
    • 2001-01-19
    • Hyun-Seok LimSang-Bom KangIn-Sang JeonGil-Heyun Choi
    • Hyun-Seok LimSang-Bom KangIn-Sang JeonGil-Heyun Choi
    • H01L218242
    • H01L21/76843C23C16/34C23C16/45553H01L21/28562H01L21/76804H01L28/91
    • A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film having low resistivity and a low content of Cl even with excellent step coverage can be formed at a temperature of 500° C. or lower, and a semiconductor capacitor having excellent leakage current characteristics can be manufactured. Also, a deposition speed, approximately 20 A/cycle, is suitable for mass production.
    • 提供了使用化学气相沉积(CVD)形成金属氮化物膜的方法,以及使用其形成半导体器件的金属接触和半导体电容器的方法。 使用其中使用金属源和氮源作为前体的化学气相沉积(CVD)形成金属氮化物膜的方法包括以下步骤:将半导体衬底插入淀积室中,使金属源流入沉积物 通过切断金属源的流入并将净化气体流入沉积室,去除沉积室中残留的金属源,切断净化气体并使氮源流入沉积室以与金属源反应 吸附在半导体衬底上,并且通过切断氮源的流入并将净化气体流入沉积室来除去留在沉积室中的氮源。 因此,可以在500℃以下的温度下形成具有低电阻率和低Cl含量的金属氮化物膜,并且可以制造具有优异的漏电流特性的半导体电容器。 此外,大约20A /周的沉积速度适合于批量生产。