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1. 发明申请

US20060057490A1 Colpolymer of alicyclic olefin having secondary hydroxyl group and acryl compound, and chemically amplified resist composition containing the same 有权
标题翻译：具有仲羟基的脂环族烯烃和丙烯酸化合物的聚合物，以及含有该羟基的化学增幅抗蚀剂组合物
公开(公告)号：US20060057490A1
公开(公告)日：2006-03-16
申请号：US11108397
申请日：2005-04-18
申请人： Hyun-Sang Joo , Joo-Hyeon Park , Dong-Chul Seo , Young-Taek Lim , Seong-Duk Cho , Ji-Young Song , Kyoung-Mun Kim
发明人： Hyun-Sang Joo , Joo-Hyeon Park , Dong-Chul Seo , Young-Taek Lim , Seong-Duk Cho , Ji-Young Song , Kyoung-Mun Kim
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/0395 , Y10S430/168
摘要： The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:
摘要翻译：本发明提供由下式1表示的聚合物和包含聚合物的化学放大型抗蚀剂组合物，该抗蚀剂组合物在C / H和L / S图案中具有优异的粘合性，储存稳定性和耐干蚀刻性，具有良好的分辨率，并且由于其良好的工艺窗口而提供了良好的图案轮廓，而不管基材的类型如何：

2. 发明授权

US07326520B2 Copolymer of alicyclic olefin having secondary hydroxyl group and acryl compound, and chemically amplified resist composition containing the same 有权
标题翻译：具有仲羟基的脂环式烯烃和丙烯酸类化合物的共聚物，以及含有该羟基的化学增幅抗蚀剂组合物
公开(公告)号：US07326520B2
公开(公告)日：2008-02-05
申请号：US11108397
申请日：2005-04-18
申请人： Hyun-Sang Joo , Joo-Hyeon Park , Dong-Chul Seo , Young-Taek Lim , Seong-Duk Cho , Ji-Young Song , Kyoung-Mun Kim
发明人： Hyun-Sang Joo , Joo-Hyeon Park , Dong-Chul Seo , Young-Taek Lim , Seong-Duk Cho , Ji-Young Song , Kyoung-Mun Kim
IPC分类号： G03F7/30 , G03F7/038 , C08F224/00 , C08F236/00
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/0395 , Y10S430/168
摘要： The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:
摘要翻译：本发明提供由下式1表示的聚合物和包含聚合物的化学放大型抗蚀剂组合物，该抗蚀剂组合物在C / H和L / S图案中具有优异的粘合性，储存稳定性和耐干蚀刻性，具有良好的分辨率，并且由于其良好的工艺窗口而提供了良好的图案轮廓，而不管基材的类型如何：

3. 发明申请

US20050153236A1 Novel polymer and chemically amplified resist composition containing the same 有权
标题翻译：含有其的新型聚合物和化学增幅抗蚀剂组合物
公开(公告)号：US20050153236A1
公开(公告)日：2005-07-14
申请号：US10940469
申请日：2004-09-14
申请人： Young-Taek Lim , Joo-Hyeon Park , Dong-Chul Seo , Chang-Min Kim , Seong-Duk Cho , Hyun-Sang Joo
发明人： Young-Taek Lim , Joo-Hyeon Park , Dong-Chul Seo , Chang-Min Kim , Seong-Duk Cho , Hyun-Sang Joo
IPC分类号： G03F7/033 , C08F212/08 , C08F216/12 , C08F220/10 , C08F222/06 , C08F232/00 , C08G61/04 , G03C1/76 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0395 , G03F7/0397
摘要： The present invention provides a chemically amplified resist composition including a novel polymer, a photoacid generator, and a solvent: The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.
摘要翻译：本发明提供一种包含新型聚合物，光酸产生剂和溶剂的化学放大抗蚀剂组合物：化学增幅抗蚀剂可以形成粘合性优异，对基材的依赖性低的抗蚀剂图案，远紫外线波长的透明度范围如KrF准分子激光器或ArF准分子激光器，干蚀刻电阻，灵敏度，分辨率和显影性。此外，聚合物含有最大数量的饱和脂肪族环，以提高耐蚀刻性，并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题，形成均匀的由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂，因此图案的边缘。

4. 发明授权

US07285373B2 Polymer and chemically amplified resist composition containing the same 有权
标题翻译：含有其的聚合物和化学放大抗蚀剂组合物
公开(公告)号：US07285373B2
公开(公告)日：2007-10-23
申请号：US10940469
申请日：2004-09-14
申请人： Young-Taek Lim , Joo-Hyeon Park , Dong-Chul Seo , Chang-Min Kim , Seong-Duk Cho , Hyun-Sang Joo
发明人： Young-Taek Lim , Joo-Hyeon Park , Dong-Chul Seo , Chang-Min Kim , Seong-Duk Cho , Hyun-Sang Joo
IPC分类号： G03F7/039
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent.The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.
摘要翻译：化学放大抗蚀剂组合物包括新型聚合物，光致酸产生剂和溶剂。化学放大抗蚀剂可以形成粘合性优异，对基板的依赖性低，抗紫外波长范围如KrF准分子激光器或ArF准分子激光器的透光性，耐干蚀刻性，灵敏度，分辨率和显影性。此外，聚合物含有最大数量的饱和脂肪族环，以提高耐蚀刻性，并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题，形成均匀的由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂，因此图案的边缘。

5. 发明授权

US08021826B2 Copolymer and composition for organic and antireflective layer 有权
标题翻译：用于有机和抗反射层的共聚物和组合物
公开(公告)号：US08021826B2
公开(公告)日：2011-09-20
申请号：US12214430
申请日：2008-06-19
申请人： Myung-Woong Kim , Joo-Hyeon Park , Young-Taek Lim , Hyung-Gi Kim , Jun-Ho Lee , Jong-Don Lee , Seung-Duk Cho
发明人： Myung-Woong Kim , Joo-Hyeon Park , Young-Taek Lim , Hyung-Gi Kim , Jun-Ho Lee , Jong-Don Lee , Seung-Duk Cho
IPC分类号： G03F7/11 , C08F222/06 , C08L37/00
CPC分类号： C09D133/10 , C08F220/14 , C08F220/18 , C08F222/06 , C08K5/10 , C08K5/34924 , C08K5/42 , C08L31/02 , C08L33/10 , C08L35/06 , C09D131/02 , C09D135/06 , G03F7/091 , Y10S438/952 , C08L2666/04
摘要： The present invention provides an organic anti-reflection coating composition comprising a copolymer represented by the following Formula 1, a light absorbent, a thermal acid generating agent, and a curing agent: wherein R1, R2 and R3 are each independent to each; R1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms; R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms or an arylalkyl group having 1 to 20 carbon atoms; R3 is hydrogen or a methyl group; m and n are repeating units in the main chain, while m+n=1, and they have values of 0.05
摘要翻译：本发明提供一种有机防反射涂料组合物，其包含由下式1表示的共聚物，光吸收剂，热酸产生剂和固化剂：其中R1，R2和R3各自独立; R1表示氢或碳原子数1〜10的烷基。 R 2表示氢，碳原子数1〜10的烷基或碳原子数1〜20的芳烷基。 R3是氢或甲基; m和n是主链中的重复单元，而m + n = 1，并且它们具有0.05

6. 发明申请

US20080318167A1 Copolymer and composition for organic and antireflective layer 有权
标题翻译：用于有机和抗反射层的共聚物和组合物
公开(公告)号：US20080318167A1
公开(公告)日：2008-12-25
申请号：US12214430
申请日：2008-06-19
申请人： Myung-Woong Kim , Joo-Hyeon Park , Young-Taek Lim , Hyung-Gi Kim , Jun-Ho Lee , Jong-Don Lee , Seung-Duk Cho
发明人： Myung-Woong Kim , Joo-Hyeon Park , Young-Taek Lim , Hyung-Gi Kim , Jun-Ho Lee , Jong-Don Lee , Seung-Duk Cho
IPC分类号： G03F7/20 , C08F222/06 , C08L37/00 , C08K5/053 , C08K5/1515 , C08K5/34 , C08K5/10 , C08K5/3492 , C08K5/21 , C08K5/22
CPC分类号： C09D133/10 , C08F220/14 , C08F220/18 , C08F222/06 , C08K5/10 , C08K5/34924 , C08K5/42 , C08L31/02 , C08L33/10 , C08L35/06 , C09D131/02 , C09D135/06 , G03F7/091 , Y10S438/952 , C08L2666/04
摘要： The present invention provides an organic anti-reflection coating composition comprising a copolymer represented by the following Formula 1, a light absorbent, a thermal acid generating agent, and a curing agent: wherein R1, R2 and R3 are each independent to each; R1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms; R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms or an arylalkyl group having 1 to 20 carbon atoms; R3 is hydrogen or a methyl group; m and n are repeating units in the main chain, while m+n=1, and they have values of 0.05
摘要翻译：本发明提供一种有机防反射涂料组合物，其包含由下式1表示的共聚物，光吸收剂，热酸产生剂和固化剂：其中R1，R2和R3各自独立; R1表示氢或碳原子数1〜10的烷基。 R 2表示氢，碳原子数1〜10的烷基或碳原子数1〜20的芳烷基。 R3是氢或甲基; m和n是主链中的重复单元，而m + n = 1，并且它们具有0.05

7. 发明授权

US06268106B1 Chemically amplified positive photoresist composition 失效
标题翻译：化学扩增的正性光致抗蚀剂组合物
公开(公告)号：US06268106B1
公开(公告)日：2001-07-31
申请号：US09337434
申请日：1999-06-21
申请人： Joo-Hyeon Park , Dong-Chul Seo , Sun-Yi Park , Seong-Ju Kim
发明人： Joo-Hyeon Park , Dong-Chul Seo , Sun-Yi Park , Seong-Ju Kim
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045
摘要： A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:
摘要翻译：化学放大阳性扩增可以形成抗蚀剂图案，其透明度，光敏度和分辨率大大提高，适用于KrF和ArF准分子激光器，使得亚微光刻工艺的精细度可达0.2μm或更小。该组合物是基于式I的共聚物，以聚苯乙烯换算的重均分子量为3,000至50,000，分子量分布（Mw / Mn）为1.0至2.0，以及低分子量化合物公式VI：

8. 发明申请

US20100075256A1 Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
标题翻译：鎓盐化合物，包含盐化合物的高分子化合物，包含高分子化合物的化学增幅抗蚀剂组合物，以及使用该组合物进行图案化的方法
公开(公告)号：US20100075256A1
公开(公告)日：2010-03-25
申请号：US12321111
申请日：2009-01-15
申请人： Hyun-Sang Joo , Joo-Hyeon Park , Jung-Hoon Oh , Dae-Hyeon Shin
发明人： Hyun-Sang Joo , Joo-Hyeon Park , Jung-Hoon Oh , Dae-Hyeon Shin
IPC分类号： G03F7/004 , C07C69/52 , C07D333/02 , C08F14/18 , G03F7/20
CPC分类号： C07C381/12 , C07C309/12 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring.The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.
摘要翻译：提供由下式（1）表示的化合物：其中R1表示氢原子，三氟甲基，烷基或烷氧基; A表示由下式（2）或式（3）表示的基团：其中R 2，R 3，R 4，R 5和R 6各自独立地表示取代或未取代的烷基，取代或未取代的烯丙基，取代或未取代的取代或未取代的苄基或取代或未取代的芳基; R2，R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。

9. 发明授权

US06369143B1 Polymer for radiation-sensitive resist and resist composition containing the same 有权
标题翻译：用于辐射敏感抗蚀剂的聚合物和含有它的抗蚀剂组合物
公开(公告)号：US06369143B1
公开(公告)日：2002-04-09
申请号：US09337437
申请日：1999-06-21
申请人： Joo-Hyeon Park , Seong-Ju Kim , Dong-Chul Seo , Sun-Yi Park
发明人： Joo-Hyeon Park , Seong-Ju Kim , Dong-Chul Seo , Sun-Yi Park
IPC分类号： C08J541
CPC分类号： G03F7/039 , C08G61/08 , G03F7/0045 , Y10S430/106 , Y10S430/115
摘要： A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.5:
摘要翻译：基于聚合物的辐射敏感聚合物和化学扩增抗蚀剂组合物，其可以通过调节基质聚合物中羧酸接枝的降冰片烯衍生物的含量和种类而容易地控制灵敏度，并且在对基材和干燥的粘附性方面优异因此可以通过使用KrF或ArF准分子激光器将其形成为提高透明度，光敏性和分辨率的抗蚀剂图案。聚合物由式I表示：其中X是选自式II和III的酸解离的接枝的降冰片烯衍生物; Y是由式Ⅳ表示的羧酸接枝的降冰片烯衍生物，l，m，n和o各自为不大于0.5的重复数，满足1 + m + n + o = 1和0.4 <= o <= 0.5：

10. 发明授权

US06146810A Resist polymer and chemical amplified resist composition containing the same 有权
标题翻译：抗性聚合物和化学放大抗蚀剂组合物含有
公开(公告)号：US06146810A
公开(公告)日：2000-11-14
申请号：US337438
申请日：1999-06-21
申请人： Dong-Chul Seo , Sun-Yi Park , Joo-Hyeon Park , Seong-Ju Kim
发明人： Dong-Chul Seo , Sun-Yi Park , Joo-Hyeon Park , Seong-Ju Kim
IPC分类号： C08F222/06 , C08F232/08 , C08G63/54 , C08L35/02 , G03F7/004 , G03F7/039 , C08F10/00
CPC分类号： G03F7/039 , C08F222/06 , C08F232/08 , G03F7/0045 , Y10S430/115 , Y10S430/122
摘要： A copolymer represented by the formula I and a chemical amplification resist containing the copolymer, which can be easily controlled in sensitivity by regulating the content and kind of the norbornene derivatives in the matrix polymers in addition to being superior in adherence to substrate and dry etch resistance: ##STR1## wherein, X is selected from the group consisting of the following general formulas II, III and IV; and, l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=1 and 0.4.ltoreq.o.ltoreq.0.5: ##STR2##
摘要翻译：由式I表示的共聚物和含有该共聚物的化学扩增抗蚀剂，其可以通过调节基质聚合物中降冰片烯衍生物的含量和种类以及对基材的粘附性和耐干蚀刻性而优异的灵敏度其中，X选自下列通式II，III和IV; 并且，l，m，n和o各自为不大于0.5的重复数，满足l + m + n + o = 1和0.4≤0.0= 0.5的条件：

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