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1. 发明授权

US08853345B2 Polymer, method for producing the same, and resist composition containing the same 有权
标题翻译：聚合物，其制造方法和含有该聚合物的抗蚀剂组合物
公开(公告)号：US08853345B2
公开(公告)日：2014-10-07
申请号：US13330971
申请日：2011-12-20
申请人： Jung-Hoon Oh , Joon Hee Han , Tae Gon Kim , Hyun Sang Joo
发明人： Jung-Hoon Oh , Joon Hee Han , Tae Gon Kim , Hyun Sang Joo
IPC分类号： C08G63/668 , G03F7/20 , G03F7/039
CPC分类号： C08G63/668 , G03F7/0392 , G03F7/0395 , G03F7/2039
摘要： Provided is a copolymer. The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.
摘要翻译：提供了一种共聚物。当共聚物掺入抗蚀剂组合物中时，可以提供令人满意的抗敏剂图案，具有高灵敏度，高分辨率，高耐腐蚀性和减少的排气量。

2. 发明申请

US20110201528A1 Methods Of Forming An Oligomer Array 审中-公开
标题翻译：形成低聚物阵列的方法
公开(公告)号：US20110201528A1
公开(公告)日：2011-08-18
申请号：US13030890
申请日：2011-02-18
申请人： Se-Kyung Baek , Joo-Hyeon Park , Hyo-Jin Yun , Hyun-Sang Joo , Ran-Ra Park , Sung-Ouk Jung , Ji-Yun Ham
发明人： Se-Kyung Baek , Joo-Hyeon Park , Hyo-Jin Yun , Hyun-Sang Joo , Ran-Ra Park , Sung-Ouk Jung , Ji-Yun Ham
IPC分类号： C40B50/18
CPC分类号： C40B50/14 , B01J19/0046 , B01J2219/00529 , B01J2219/00585 , B01J2219/00596 , B01J2219/00608 , B01J2219/00612 , B01J2219/00637 , B01J2219/00659 , B01J2219/00709 , B01J2219/00711 , B01J2219/00722 , B82Y30/00
摘要： The present invention provides compositions for forming an oligomer array and methods for using the same. Such a composition may include an acid stable polymer, a photoacid generator and an organic solvent and may allow for the selective attachment of oligormers at one or more desired positions on a substrate using long wavelength light.
摘要翻译：本发明提供了用于形成低聚物阵列的组合物及其使用方法。这种组合物可以包括酸稳定的聚合物，光致酸产生剂和有机溶剂，并且可以允许使用长波长的光在衬底上的一个或多个所需位置选择性连接寡聚体。

3. 发明申请

US20100075256A1 Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
标题翻译：鎓盐化合物，包含盐化合物的高分子化合物，包含高分子化合物的化学增幅抗蚀剂组合物，以及使用该组合物进行图案化的方法
公开(公告)号：US20100075256A1
公开(公告)日：2010-03-25
申请号：US12321111
申请日：2009-01-15
申请人： Hyun-Sang Joo , Joo-Hyeon Park , Jung-Hoon Oh , Dae-Hyeon Shin
发明人： Hyun-Sang Joo , Joo-Hyeon Park , Jung-Hoon Oh , Dae-Hyeon Shin
IPC分类号： G03F7/004 , C07C69/52 , C07D333/02 , C08F14/18 , G03F7/20
CPC分类号： C07C381/12 , C07C309/12 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring.The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.
摘要翻译：提供由下式（1）表示的化合物：其中R1表示氢原子，三氟甲基，烷基或烷氧基; A表示由下式（2）或式（3）表示的基团：其中R 2，R 3，R 4，R 5和R 6各自独立地表示取代或未取代的烷基，取代或未取代的烯丙基，取代或未取代的取代或未取代的苄基或取代或未取代的芳基; R2，R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。

4. 发明授权

US08779183B2 Acid generating agent for chemically amplified resist compositions 有权
标题翻译：用于化学放大抗蚀剂组合物的酸产生剂
公开(公告)号：US08779183B2
公开(公告)日：2014-07-15
申请号：US12214429
申请日：2008-06-19
申请人： Jung-Hoon Oh , Dong-Cheol Seo , Hyun-Sang Joo , Chang-Soo Lee
发明人： Jung-Hoon Oh , Dong-Cheol Seo , Hyun-Sang Joo , Chang-Soo Lee
IPC分类号： C07C309/17
CPC分类号： C07C309/12 , C07C25/18 , C07C43/225 , C07C69/712 , C07C309/08 , C07C381/12 , C07C2601/08 , C07C2601/14 , C07C2602/28 , C07C2602/42 , C07C2603/74 , C07C2603/86 , C07D333/46
摘要： An acid generating agent used for chemically amplified resist compositions is provided, which agent is represented by the following formula (1): wherein X represents a monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms, and having at least one hydrogen atom on the ring substituted by an alkyl or alkoxy group which may be unsubstituted or substituted with a group selected from an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group and an aldehyde group, or by a perfluoroalkyl group, a hydroxyalkyl group, or a cyano group; R6 is an alkyl group, an alkoxy group, or a heteroatom selected from the group consisting of N, S and F; m is an integer from 0 to 2; and A+ is an organic counterion.
摘要翻译：提供了用于化学放大抗蚀剂组合物的酸产生剂，该试剂由下式（1）表示：其中X表示具有3至30个碳原子的单环或多环烃基，并且其上具有至少一个氢原子可被未取代的或被选自醚基，酯基，羰基，缩醛基，环氧基，腈基和醛基中的基团取代的烷基或烷氧基取代的环，或由全氟烷基，羟烷基或氰基; R6是烷基，烷氧基或选自N，S和F的杂原子; m为0〜2的整数; 而A +是一种有机的抗衡离子。

5. 发明申请

US20120165499A1 POLYMER, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION CONTAINING THE SAME 有权
标题翻译：聚合物，其制造方法和含有该组合物的耐腐蚀组合物
公开(公告)号：US20120165499A1
公开(公告)日：2012-06-28
申请号：US13330971
申请日：2011-12-20
申请人： Jung-Hoon OH , Joon Hee Han , Tae Gon Kim , Hyun Sang Joo
发明人： Jung-Hoon OH , Joon Hee Han , Tae Gon Kim , Hyun Sang Joo
IPC分类号： C08G63/66
CPC分类号： C08G63/668 , G03F7/0392 , G03F7/0395 , G03F7/2039
摘要： Provided is a copolymer containing a repeating unit represented by the following formula (1): wherein R1 represents an alkanediyl group, a heteroalkanediyl group, a cycloalkanediyl group, a heterocycloalkanediyl group, an arylene group, a heteroarylene group, or an alkylarylene group; R2 represents a hydrogen atom, an alkyl group, a heteroalkyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, an alkoxy group, or an alkylalkoxy group; R3, R4, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n1 represents an integer from 0 to 10; and n2 represents an integer from 0 to 10.The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.
摘要翻译：提供含有下式（1）表示的重复单元的共聚物：其中R1表示烷二基，杂烷二基，环烷二基，杂环烷二基，亚芳基，亚杂芳基或烷基亚芳基。 R2表示氢原子，烷基，杂烷基，环烷基，杂环烷基，芳基，杂芳基，烷氧基或烷基烷氧基; R 3，R 4，R 5和R 6各自独立地表示氢原子或碳原子数1〜5的烷基。 n1表示0〜10的整数， n2表示0〜10的整数。当共聚物掺入抗蚀剂组合物中时，可以提供令人满意的抗敏剂图案，其具有高灵敏度，高分辨率，高耐蚀刻性和减少的废气量。

6. 发明授权

US07326520B2 Copolymer of alicyclic olefin having secondary hydroxyl group and acryl compound, and chemically amplified resist composition containing the same 有权
标题翻译：具有仲羟基的脂环式烯烃和丙烯酸类化合物的共聚物，以及含有该羟基的化学增幅抗蚀剂组合物
公开(公告)号：US07326520B2
公开(公告)日：2008-02-05
申请号：US11108397
申请日：2005-04-18
申请人： Hyun-Sang Joo , Joo-Hyeon Park , Dong-Chul Seo , Young-Taek Lim , Seong-Duk Cho , Ji-Young Song , Kyoung-Mun Kim
发明人： Hyun-Sang Joo , Joo-Hyeon Park , Dong-Chul Seo , Young-Taek Lim , Seong-Duk Cho , Ji-Young Song , Kyoung-Mun Kim
IPC分类号： G03F7/30 , G03F7/038 , C08F224/00 , C08F236/00
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/0395 , Y10S430/168
摘要： The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:
摘要翻译：本发明提供由下式1表示的聚合物和包含聚合物的化学放大型抗蚀剂组合物，该抗蚀剂组合物在C / H和L / S图案中具有优异的粘合性，储存稳定性和耐干蚀刻性，具有良好的分辨率，并且由于其良好的工艺窗口而提供了良好的图案轮廓，而不管基材的类型如何：

7. 发明授权

US07285373B2 Polymer and chemically amplified resist composition containing the same 有权
标题翻译：含有其的聚合物和化学放大抗蚀剂组合物
公开(公告)号：US07285373B2
公开(公告)日：2007-10-23
申请号：US10940469
申请日：2004-09-14
申请人： Young-Taek Lim , Joo-Hyeon Park , Dong-Chul Seo , Chang-Min Kim , Seong-Duk Cho , Hyun-Sang Joo
发明人： Young-Taek Lim , Joo-Hyeon Park , Dong-Chul Seo , Chang-Min Kim , Seong-Duk Cho , Hyun-Sang Joo
IPC分类号： G03F7/039
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent.The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.
摘要翻译：化学放大抗蚀剂组合物包括新型聚合物，光致酸产生剂和溶剂。化学放大抗蚀剂可以形成粘合性优异，对基板的依赖性低，抗紫外波长范围如KrF准分子激光器或ArF准分子激光器的透光性，耐干蚀刻性，灵敏度，分辨率和显影性。此外，聚合物含有最大数量的饱和脂肪族环，以提高耐蚀刻性，并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题，形成均匀的由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂，因此图案的边缘。

8. 发明授权

US08865919B2 Sulfonium compound, photo-acid generator, and method for manufacturing the same 有权
标题翻译：锍化合物，光酸发生剂及其制造方法
公开(公告)号：US08865919B2
公开(公告)日：2014-10-21
申请号：US13341102
申请日：2011-12-30
申请人： Hyun Sang Joo , Dong Chul Seo , Dae Kyung Yoon , Dae Hyeon Shin
发明人： Hyun Sang Joo , Dong Chul Seo , Dae Kyung Yoon , Dae Hyeon Shin
IPC分类号： C07D333/48 , G03F7/004 , C07C309/06 , C07C309/12 , C07D333/46 , C07D307/64 , C07C381/12 , G03F7/039
CPC分类号： C07D307/64 , C07C309/06 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397
摘要： A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided: wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A− and B− are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.
摘要翻译：提供由式（1）表示的锍化合物，光酸产生剂和锍化合物的制备方法：其中X表示给电子基团; R1和R2各自表示烷基，环烷基等; R 3和R 4各自表示亚芳基或亚杂芳基; R5和R6各自表示烷基，环烷基等; 而A-和B-是彼此不同的阴离子。当锍化合物用作光酸产生剂时，可以产生均匀且优异的抗蚀剂图案。

9. 发明申请

US20120172606A1 SULFONIUM COMPOUND, PHOTO-ACID GENERATOR, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磺化合物，光酸发生器及其制造方法
公开(公告)号：US20120172606A1
公开(公告)日：2012-07-05
申请号：US13341102
申请日：2011-12-30
申请人： Hyun Sang JOO , Dong Chul Seo , Dae Kyung Yoon , Dae Hyeon Shin
发明人： Hyun Sang JOO , Dong Chul Seo , Dae Kyung Yoon , Dae Hyeon Shin
IPC分类号： C07C309/06 , C07D407/12 , C07D333/48 , C07C309/19
CPC分类号： C07D307/64 , C07C309/06 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397
摘要： A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided: wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A− and B− are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.
摘要翻译：提供由式（1）表示的锍化合物，光酸产生剂和锍化合物的制备方法：其中X表示给电子基团; R1和R2各自表示烷基，环烷基等; R 3和R 4各自表示亚芳基或亚杂芳基; R5和R6各自表示烷基，环烷基等; 而A-和B-是彼此不同的阴离子。当锍化合物用作光酸产生剂时，可以产生均匀且优异的抗蚀剂图案。

10. 发明授权

US08158327B2 Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
标题翻译：鎓盐化合物，包含盐化合物的高分子化合物，包含高分子化合物的化学增幅抗蚀剂组合物，以及使用该组合物进行图案化的方法
公开(公告)号：US08158327B2
公开(公告)日：2012-04-17
申请号：US12321111
申请日：2009-01-15
申请人： Hyun-Sang Joo , Joo-Hyeon Park , Jung-Hoon Oh , Dae-Hyeon Shin
发明人： Hyun-Sang Joo , Joo-Hyeon Park , Jung-Hoon Oh , Dae-Hyeon Shin
IPC分类号： G03F7/004 , G03F7/30 , C08F228/02
CPC分类号： C07C381/12 , C07C309/12 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.
摘要翻译：提供由下式（1）表示的化合物：其中R1表示氢原子，三氟甲基，烷基或烷氧基; A表示由下式（2）或式（3）表示的基团：其中R 2，R 3，R 4，R 5和R 6各自独立地表示取代或未取代的烷基，取代或未取代的烯丙基，取代或未取代的取代或未取代的苄基或取代或未取代的芳基; R2，R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。

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