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    • 2. 发明授权
    • Method and apparatus for detecting defects on a wafer
    • 用于检测晶片上的缺陷的方法和装置
    • US07466853B2
    • 2008-12-16
    • US10749670
    • 2003-12-30
    • Deok-Yong KimByoung-Ho Lee
    • Deok-Yong KimByoung-Ho Lee
    • G06K9/00
    • G01N21/9501
    • A light is irradiated on a wafer including a plurality of pixels. Image information corresponding to each pixel is measured by sensing the light reflected by the wafer surface. A raw datum is calculated by subtracting the image information of a corresponding pixel from the image information of a target pixel. The target pixel is a subject pixel for detecting a defect. The corresponding pixel is a pixel located in a first device unit and corresponds to the target pixel. The first device unit is located adjacent to a second device unit that includes the target pixel. The threshold region is preset to have at least one pair of upper and lower limits. The target pixel is marked as a defective pixel when the raw datum thereof is included in the threshold region. Accordingly, the killer defect can be detected separate from the non-killer defects that are usually detected together with the killer defects.
    • 将光照射在包括多个像素的晶片上。 通过感测由晶片表面反射的光来测量与每个像素对应的图像信息。 通过从目标像素的图像信息中减去相应像素的图像信息来计算原始数据。 目标像素是用于检测缺陷的主题像素。 对应的像素是位于第一设备单元中并且对应于目标像素的像素。 第一设备单元位于与包括目标像素的第二设备单元相邻的位置。 阈值区域被预设为具有至少一对上限和下限。 当其原始数据被包括在阈值区域中时,目标像素被标记为缺陷像素。 因此,可以与通常与杀手缺陷一起检测的非杀伤性缺陷分开检测杀伤瑕疵。
    • 3. 发明申请
    • OXIDIZING GAS PRESSURIZATION SYSTEM
    • 氧气加压系统
    • US20070286776A1
    • 2007-12-13
    • US11758440
    • 2007-06-05
    • Chang-Jin LeeByoung-Ho LeeSung-Hyuk Kim
    • Chang-Jin LeeByoung-Ho LeeSung-Hyuk Kim
    • G05D16/00
    • C01B13/10C01B7/01
    • An oxidizing gas pressurization system capable of supplying protective cooling water into an oxidizing gas pressurization unit such that the protective cooling water serves as a protective film against strong oxidizing power and cools the heat generated in the pressurization unit is disclosed. The oxidizing gas pressurization system for pressurizing and supplying an oxidizing gas such as ozone and chlorine includes an oxidizing gas storage unit, an oxidizing gas pressurization unit for pressurizing the oxidizing gas supplied from the oxidizing gas storage unit at a high pressure and discharging the oxidizing gas, and a cooling water supply unit for supplying protective cooling water serving as a protective film against the oxidizing pas supplied into the oxidizing gas pressurization unit.
    • 公开了一种氧化气体加压系统,其能够将保护性冷却水供给到氧化剂气体加压装置中,使得保护性冷却水用作防止强氧化能力的保护膜并冷却加压单元中产生的热量。 用于对臭氧和氯气等氧化性气体进行加压供给的氧化剂气体加压系统包括氧化气体储存单元,氧化气体加压单元,用于对从氧化剂气体储存单元供给的氧化气体进行高压加压并排出氧化气体 以及冷却水供给单元,其供给用作保护膜的保护性冷却水,抵抗供给到氧化剂气体加压单元中的氧化气体。
    • 5. 发明授权
    • Method for selecting reference images, method and apparatus for inspecting patterns on wafers, and method for dividing a wafer into application regions
    • 用于选择参考图像的方法,用于检查晶片上的图案的方法和装置以及将晶片分割成应用区域的方法
    • US07200258B2
    • 2007-04-03
    • US10442955
    • 2003-05-22
    • Byoung-Ho LeeDeok-Yong Kim
    • Byoung-Ho LeeDeok-Yong Kim
    • G06K9/00
    • G03F7/7065G01N21/95607G06T7/0002G06T7/001G06T2207/30148
    • A method for selecting reference images, a method and an apparatus for inspecting patterns on a wafer, and a method for dividing a wafer into application regions. In a method for inspecting patterns according to at least one exemplary embodiment of the present invention, a plurality of reference dies may be selected and a difference in gray levels of images of the references dies may be determined. The reference dies may include a first die substantially centrally located on the wafer and at least one second die located at an edge portion of the wafer. One reference image is selected if the difference in gray levels is within a permitted tolerance and more than one reference image may be selected if the difference in gray levels is not within the permitted tolerance. A pattern inspection may be performed using the reference images.
    • 一种用于选择参考图像的方法,用于检查晶片上的图案的方法和装置以及将晶片分割成应用区域的方法。 在根据本发明的至少一个示例性实施例的用于检查图案的方法中,可以选择多个参考管芯,并且可以确定参考管芯的图像的灰度级差。 参考管芯可以包括基本中心地位于晶片上的第一管芯和位于晶片边缘部分的至少一个第二管芯。 如果灰度级差在允许公差内,则选择一个参考图像,如果灰度级差不在允许的公差内,则可以选择多于一个参考图像。 可以使用参考图像来执行图案检查。