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1. 发明授权

US07378071B2 Silicon wafer and method for producing silicon single crystal 有权
标题翻译：硅晶片和硅单晶的制造方法
公开(公告)号：US07378071B2
公开(公告)日：2008-05-27
申请号：US11178096
申请日：2005-07-07
申请人： Hyon-Jong Cho , Cheol-Woo Lee , Hong-Woo Lee , Cheong Jin Soo , Kim Sunmi
发明人： Hyon-Jong Cho , Cheol-Woo Lee , Hong-Woo Lee , Cheong Jin Soo , Kim Sunmi
IPC分类号： C01B33/26 , C30B15/20
CPC分类号： C30B29/06 , C30B15/305
摘要： A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.
摘要翻译：一种通过切克劳斯基法生长硅单晶锭的方法，其能够提供具有非常均匀的面内质量的硅晶片，并且导致半导体器件产率的提高。提供了一种通过切克劳斯基法（Czochralski method）制造硅单晶锭的方法，其中当将硅熔体的对流分为芯电池和外电池时，硅单晶锭在最大水平方向宽度的核心单元是硅熔体表面半径的30-60％。在一个实施例中，在单芯晶圆的最大垂直方向深度等于或大于硅熔体的最大深度的50％的条件下，生长硅单晶锭。

2. 发明申请

US20060016386A1 Silicon wafer and method for producing silicon single crystal 有权
标题翻译：硅晶片和硅单晶的制造方法
公开(公告)号：US20060016386A1
公开(公告)日：2006-01-26
申请号：US11178096
申请日：2005-07-07
申请人： Hyon-Jong Cho , Cheol-Woo Lee , Hong-Woo Lee , Cheong Soo , Kim Sunmi
发明人： Hyon-Jong Cho , Cheol-Woo Lee , Hong-Woo Lee , Cheong Soo , Kim Sunmi
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/305
摘要： A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.
摘要翻译：一种通过切克劳斯基法生长硅单晶锭的方法，其能够提供具有非常均匀的面内质量的硅晶片，并且导致半导体器件产率的提高。提供了一种通过切克劳斯基法（Czochralski method）制造硅单晶锭的方法，其中当将硅熔体的对流分为芯电池和外电池时，硅单晶锭在最大水平方向宽度的核心单元是硅熔体表面半径的30-60％。在一个实施例中，在单芯晶圆的最大垂直方向深度等于或大于硅熔体的最大深度的50％的条件下，生长硅单晶锭。

3. 发明授权

US07229495B2 Silicon wafer and method for producing silicon single crystal 有权
标题翻译：硅晶片和硅单晶的制造方法
公开(公告)号：US07229495B2
公开(公告)日：2007-06-12
申请号：US10741746
申请日：2003-12-19
申请人： Hyon-Jong Cho , Cheol-Woo Lee , Hong-Woo Lee , Jin Soo Cheong , Sunmi Kim
发明人： Hyon-Jong Cho , Cheol-Woo Lee , Hong-Woo Lee , Jin Soo Cheong , Sunmi Kim
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/305
摘要： A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection distribution of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.
摘要翻译：一种通过切克劳斯基法生长硅单晶锭的方法，其能够提供具有非常均匀的面内质量的硅晶片，并且导致半导体器件产率的提高。提供了一种通过切克劳斯（Czochralski）法制造硅单晶锭的方法，其中当将硅熔体的对流分布分为芯电池和外电池时，硅单晶锭在最大水平方向芯电池的宽度为硅熔体的表面半径的30〜60％。在一个实施例中，在单芯晶圆的最大垂直方向深度等于或大于硅熔体的最大深度的50％的条件下，生长硅单晶锭。

4. 发明授权

US06574264B2 Apparatus for growing a silicon ingot 有权
公开(公告)号：US06574264B2
公开(公告)日：2003-06-03
申请号：US10029949
申请日：2001-12-31
申请人： Hong-Woo Lee , Joon-Young Choi , Hyon-Jong Cho
发明人： Hong-Woo Lee , Joon-Young Choi , Hyon-Jong Cho
IPC分类号： H05B300
CPC分类号： C30B15/14 , C30B15/10 , C30B15/30
摘要： An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.

5. 发明授权

US06521316B2 single crystalline silicon wafer, ingot, and producing method thereof 有权
标题翻译：单晶硅晶片，锭及其制造方法
公开(公告)号：US06521316B2
公开(公告)日：2003-02-18
申请号：US09742215
申请日：2000-12-22
申请人： Hong-Woo Lee , Joon-Young Choi , Hyon-Jong Cho , Hak-Do Yoo
发明人： Hong-Woo Lee , Joon-Young Choi , Hyon-Jong Cho , Hak-Do Yoo
IPC分类号： C30B2906
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , Y10T428/21
摘要： The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.
摘要翻译：本发明涉及一种单晶硅锭，单晶晶片及其制造方法，该方法能够减少大的缺陷面积，同时增加聚集的空位点区域的微空缺缺陷面积，这是通过提供晶锭生长和冷却的均匀条件以及通过调整生长锭生长的牵引速率来产生中心轴和氧化诱发的堆垛层错环之间的区域，因此氧化诱导堆垛层错环只存在在晶锭半径的边缘。

6. 发明授权

US08574362B2 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot 有权
标题翻译：用于制造超低缺陷半导体单晶锭的方法和装置
公开(公告)号：US08574362B2
公开(公告)日：2013-11-05
申请号：US12244283
申请日：2008-10-02
申请人： Young-Ho Hong , Hyon-Jong Cho , Sung-Young Lee , Seung-Ho Shin , Hong-Woo Lee
发明人： Young-Ho Hong , Hyon-Jong Cho , Sung-Young Lee , Seung-Ho Shin , Hong-Woo Lee
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B19/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： C30B15/14 , C30B15/203 , C30B15/206 , C30B29/06
摘要： The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.
摘要翻译：本发明涉及一种用于制造超低缺陷半导体单晶锭的方法，该方法使用Czochralski工艺，通过将种子浸入容纳在石英坩埚中的半导体熔体中，通过固 - 液界面生长半导体单晶锭;以及在旋转种子的同时慢慢拉起种子，其中随着单晶锭生长的进展，根据单晶锭的长度变化增加或减少半导体熔体的表面上的热空间来控制无缺陷边缘处理。

7. 发明申请

US20090183670A1 APPARATUS FOR MANUFACTURING HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL INGOT AND METHOD USING THE SAME 审中-公开
标题翻译：用于制造高质量半导体单晶的装置和使用该晶体的方法
公开(公告)号：US20090183670A1
公开(公告)日：2009-07-23
申请号：US12356249
申请日：2009-01-20
申请人： Hyon-Jong Cho , Young-Ho Hong , Hong-Woo Lee , Jong-Min Kang , Dae-Yeon Kim
发明人： Hyon-Jong Cho , Young-Ho Hong , Hong-Woo Lee , Jong-Min Kang , Dae-Yeon Kim
IPC分类号： C30B15/20
CPC分类号： C30B15/305 , C30B29/06 , Y10T117/1032
摘要： The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. The apparatus of the present invention includes a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a single crystal from the semiconductor melt received in the quartz crucible, and a magnetic field applying means for forming a Maximum Gauss Plane (MGP) at a location of ML-1000 mm to ML-350 mm based on a Melt Level (ML) of the melt surface, and applying a strong magnetic field of 3000 to 5500 Gauss to an intersection between the MGP and the side wall of the quartz crucible and a weak magnetic field of 1500 to 3000 Gauss below a solid-liquid interface.
摘要翻译：本发明涉及用于制造高质量半导体单晶锭的装置及其使用方法。本发明的装置包括石英坩埚，安装在石英坩埚的侧壁周围的加热器，用于从接收在石英坩埚中的半导体熔体中拉出单晶的单晶拉制装置，以及用于基于熔体表面的熔融水平（ML），在ML-1000mm的位置形成最大高斯平面（MGP）至ML-350mm，并将3000至5500高斯的强磁场施加到 MGP和石英坩埚的侧壁以及低于固液界面的1500至3000高斯的弱磁场。

8. 发明申请

US20090114147A1 SEMICONDUCTOR SINGLE CRYSTAL GROWTH METHOD HAVING IMPROVEMENT IN OXYGEN CONCENTRATION CHARACTERISTICS 有权
标题翻译：具有改善氧化浓度特性的半导体单晶生长方法
公开(公告)号：US20090114147A1
公开(公告)日：2009-05-07
申请号：US12263000
申请日：2008-10-31
申请人： Hyon-Jong Cho , Seung-Ho Shin , Ji-Hun Moon , Hong-Woo Lee , Young-Ho Hong
发明人： Hyon-Jong Cho , Seung-Ho Shin , Ji-Hun Moon , Hong-Woo Lee , Young-Ho Hong
IPC分类号： C30B15/00
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04
摘要： The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.
摘要翻译：本发明涉及一种半导体单晶生长方法，其使用切克劳斯基法（Czochralski）方法，通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固体 - 液体界面生长半导体单晶，并将其转动石英坩埚并施加强的水平磁场，其中当石英坩埚以0.6rpm和1.5rpm之间的速率旋转时，种子被拉起。

9. 发明授权

US08114216B2 Semiconductor single crystal growth method having improvement in oxygen concentration characteristics 有权
标题翻译：具有氧浓度特性改善的半导体单晶生长方法
公开(公告)号：US08114216B2
公开(公告)日：2012-02-14
申请号：US12263000
申请日：2008-10-31
申请人： Hyon-Jong Cho , Seung-Ho Shin , Ji-Hun Moon , Hong-Woo Lee , Young-Ho Hong
发明人： Hyon-Jong Cho , Seung-Ho Shin , Ji-Hun Moon , Hong-Woo Lee , Young-Ho Hong
IPC分类号： C30B15/00
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04
摘要： The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.
摘要翻译：本发明涉及一种半导体单晶生长方法，其使用切克劳斯基法（Czochralski）方法，通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固体 - 液体界面生长半导体单晶，并将其转动石英坩埚并施加强的水平磁场，其中当石英坩埚以0.6rpm和1.5rpm之间的速率旋转时，种子被拉起。

10. 发明申请

US20090090294A1 METHOD AND APPARATUS FOR MANUFACTURING AN ULTRA LOW DEFECT SEMICONDUCTOR SINGLE CRYSTALLINE INGOT 有权
标题翻译：用于制造超低缺陷半导体单晶体的方法和装置
公开(公告)号：US20090090294A1
公开(公告)日：2009-04-09
申请号：US12244283
申请日：2008-10-02
申请人： Young-Ho Hong , Hyon-Jong Cho , Sung-Young Lee , Seung-Ho Shin , Hong-Woo Lee
发明人： Young-Ho Hong , Hyon-Jong Cho , Sung-Young Lee , Seung-Ho Shin , Hong-Woo Lee
IPC分类号： C30B15/20 , C30B35/00
CPC分类号： C30B15/14 , C30B15/203 , C30B15/206 , C30B29/06
摘要： The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.
摘要翻译：本发明涉及一种用于制造超低缺陷半导体单晶锭的方法，该方法使用Czochralski工艺，通过将种子浸入容纳在石英坩埚中的半导体熔体中，通过固 - 液界面生长半导体单晶锭;以及在旋转种子的同时慢慢拉起种子，其中随着单晶锭生长的进展，根据单晶锭的长度变化增加或减少半导体熔体的表面上的热空间来控制无缺陷边缘处理。

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