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1. 发明申请

US20050038220A1 Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer 有权
标题翻译：多官能环状硅氧烷化合物，由该化合物制备的硅氧烷类聚合物和使用聚合物制备电介质膜的方法
公开(公告)号：US20050038220A1
公开(公告)日：2005-02-17
申请号：US10878119
申请日：2004-06-29
申请人： Hyeon Shin , Hyun Jeong , Jong Seon , Sang Mah , Jin Yim , Jae Lee , Kwang Lee , Jung Kim
发明人： Hyeon Shin , Hyun Jeong , Jong Seon , Sang Mah , Jin Yim , Jae Lee , Kwang Lee , Jung Kim
IPC分类号： C07F7/18 , C07F7/21 , C08G77/14 , H01L21/312 , C08G77/04 , C07F7/04
CPC分类号： C07F7/21 , Y10T428/31663
摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges(B), an acyclic alkoxy silane monomer(C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
摘要翻译：多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。

2. 发明申请

US20050131190A1 Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权
标题翻译：多官能直链硅氧烷化合物，由该化合物制备的硅氧烷聚合物，以及通过使用聚合物形成电介质膜的方法
公开(公告)号：US20050131190A1
公开(公告)日：2005-06-16
申请号：US10868222
申请日：2004-06-16
申请人： Jae Lee , Jong Seon , Hyun Jeong , Jin Yim , Hyeon Shin
发明人： Jae Lee , Jong Seon , Hyun Jeong , Jin Yim , Hyeon Shin
IPC分类号： C07B61/00 , C07F7/08 , C07F7/18 , C07F7/21 , C08G77/04 , C08G77/50 , C08G77/60 , G03F7/075 , H01L21/312
CPC分类号： C08G77/50 , C07F7/0838 , C07F7/1804
摘要： A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.
摘要翻译：新型多功能直链硅氧烷化合物，由硅氧烷化合物制备的硅氧烷聚合物，以及通过使用硅氧烷聚合物形成电介质膜的方法。线性硅氧烷聚合物具有增强的机械性能（例如模量），优异的热稳定性，低碳含量和低吸湿性，并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能，热稳定性和抗裂性，而且具有低吸湿性和与成孔材料的优异相容性，导致低的介电常数。此外，硅氧烷聚合物保持相对低的碳含量，但具有高的SiO 2含量，从而改善了对半导体器件的适用性。因此，硅氧烷聚合物有利地用作半导体器件的介电膜的材料。

3. 发明申请

US20050090570A1 Composition for forming dielectric film and method for forming dielectric film or pattern using the composition 审中-公开
标题翻译：用于形成介质膜的组合物和使用该组合物形成介电膜或图案的方法
公开(公告)号：US20050090570A1
公开(公告)日：2005-04-28
申请号：US10808374
申请日：2004-03-25
申请人： Yi Lyu , Jin Yim , Jong Seon
发明人： Yi Lyu , Jin Yim , Jong Seon
IPC分类号： G03F7/075 , C08G77/04 , C08L71/02 , C08L83/04 , C09D5/25 , C09D183/02 , C09D183/04 , C09D183/14 , G03F7/00 , G03F7/004 , H01L21/312 , H01L21/316 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/31695
摘要： A composition for forming a porous dielectric film which is prepared by dissolving a siloxane-based precursor containing hydroxyl groups or alkoxy groups and a pore-generating material together with a condensation catalyst generator capable of curing the siloxane-based resin precursor, in an organic solvent. The porous dielectric film has a low dielectric constant and improved physical properties and is formed by coating the composition onto a substrate, followed by light exposure to cause polycondensation at low temperature. A method for forming a negative pattern of a porous dielectric film is also provided without the use of a photoresist by exposing the coated film to light through a mask, and removing unexposed regions with a developing agent.
摘要翻译：一种用于形成多孔电介质膜的组合物，其通过将含有羟基或烷氧基的硅氧烷基前体和产生孔的材料与能够固化硅氧烷基树脂前体的缩合催化剂发生物一起在有机溶剂。多孔绝缘膜具有低的介电常数和改善的物理性能，并且通过将该组合物涂覆在基底上形成，随后进行曝光以在低温下引起缩聚。还提供了形成多孔电介质膜的阴图形的方法，而不用光致抗蚀剂通过将掩模曝光通过掩模，并用显影剂除去未曝光的区域。

4. 发明申请

US20050049382A1 Novel siloxane-based resin and interlayer insulating film formed using the same 有权
标题翻译：新型硅氧烷类树脂和使用其形成的层间绝缘膜
公开(公告)号：US20050049382A1
公开(公告)日：2005-03-03
申请号：US10768058
申请日：2004-02-02
申请人： Yi Lyu , Jin Yim , Ki Song , Hyun Jeong , Joon Ryu
发明人： Yi Lyu , Jin Yim , Ki Song , Hyun Jeong , Joon Ryu
IPC分类号： C08G77/50 , C08G77/14 , C08L83/04 , C09D183/14 , H01L21/312 , H01L21/316 , C08G77/60
CPC分类号： C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695 , Y10T428/31663
摘要： A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.
摘要翻译：具有新颖结构的硅氧烷类树脂和使用其的半导体层间绝缘膜。除了优异的机械性能之外，硅氧烷类树脂具有低的介电常数，并且是在半导体器件的互连层之间的绝缘膜中的有用材料。

5. 发明申请

US20060135633A1 Porous low-dielectric constant (k) thin film with controlled solvent diffusion 审中-公开
标题翻译：具有受控溶剂扩散的多孔低介电常数（k）薄膜
公开(公告)号：US20060135633A1
公开(公告)日：2006-06-22
申请号：US11263867
申请日：2005-11-02
申请人： Kwang Lee , Jin Yim
发明人： Kwang Lee , Jin Yim
IPC分类号： C08J9/00 , C08L63/00
CPC分类号： C08J5/18 , C08J2383/04 , C08J2383/14 , H01B3/441
摘要： A porous low-dielectric constant thin film with controlled solvent diffusion into pores of the porous thin film. The porous thin film i s formed from a composition including a porogen containing at least one π-π interacting functional group, a thermostable matrix precursor, and a solvent dissolving the porogen and the matrix precursor. The porous thin film thus formed has mesopores not smaller than 10 nm in size and has a solvent diffusion rate not higher than 30 μm2/sec. Due to the presence of the large pores, the porous thin film can greatly inhibit solvent diffusion into the pores of the thin film, which is encountered during wet processes, without substantial changes in dielectric constant, elastic modulus and hardness depending on the porosity of the thin film.
摘要翻译：多孔低介电常数薄膜，其具有控制的溶剂扩散到多孔薄膜的孔中。由包含至少一个π-π相互作用官能团的致孔剂的组合物形成多孔薄膜，热稳定性基质前体和溶解致孔剂和基质前体的溶剂。由此形成的多孔薄膜的中孔的尺寸不小于10nm，溶剂扩散速率不高于30μm2 / sec。由于存在大的孔，多孔薄膜可以极大地抑制在湿法中遇到的溶剂扩散到薄膜的孔中，而介电常数，弹性模量和硬度几乎不变，这取决于薄膜。

6. 发明申请

US20060175653A1 Nonvolatile nanochannel memory device using mesoporous material 有权
公开(公告)号：US20060175653A1
公开(公告)日：2006-08-10
申请号：US11237891
申请日：2005-09-29
申请人： Won Joo , Jin Yim , Kwang Lee , Sang Lee
发明人： Won Joo , Jin Yim , Kwang Lee , Sang Lee
IPC分类号： H01L29/76
CPC分类号： H01L51/0595 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/685 , H01L45/04 , H01L45/085 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1625 , H01L51/0048 , H01L51/0052
摘要： A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer having metal nanoparticles or metal ions fed into the nanochannels is disposed between an upper electrode and a lower electrode. Thus, the memory device has high processability, and manifests excellent reproducibility and uniform performance.

7. 发明申请

US20060208248A1 Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material 失效
公开(公告)号：US20060208248A1
公开(公告)日：2006-09-21
申请号：US11249395
申请日：2005-10-14
申请人： Kwang Lee , Won Joo , Jin Yim , Yoon Kang
发明人： Kwang Lee , Won Joo , Jin Yim , Yoon Kang
IPC分类号： H01L23/58 , H01L21/4757
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/15 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L51/0036 , H01L51/0591
摘要： A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an organic-inorganic complex for use in formation of nanopores, and has metal nanoparticles or metal ions fed into the nanopores. Therefore, the memory device has excellent processability, high reproducibility, and uniform performance.

8. 发明申请

US20060094850A1 Composition for preparing nanoporous material comprising calixarene derivative 失效
公开(公告)号：US20060094850A1
公开(公告)日：2006-05-04
申请号：US11245037
申请日：2005-10-07
申请人： Jin Yim , Kwang Lee
发明人： Jin Yim , Kwang Lee
IPC分类号： C08G77/00 , C08G67/00 , C08J9/00 , C08G77/12
CPC分类号： H01L21/02126 , C09D183/14 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： A composition for preparing a nanoporous material. The composition comprises a thermostable matrix precursor, a calixarene derivative, and a solvent. The composition may enable formation of a low dielectric constant film in which nanopores with a size not larger than 50 Å are uniformly distributed.

9. 发明申请

US20070027225A1 Composition for preparing porous dielectric thin films 审中-公开
公开(公告)号：US20070027225A1
公开(公告)日：2007-02-01
申请号：US11543835
申请日：2006-10-06
申请人： Yi Lyu , Kwang Lee , Ji Kim , Seok Chang , Jin Yim , Jae Park
发明人： Yi Lyu , Kwang Lee , Ji Kim , Seok Chang , Jin Yim , Jae Park
IPC分类号： C08J9/00
CPC分类号： H01L21/31695 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282
摘要： The present invention provides a composition for preparing porous dielectric thin films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.

10. 发明申请

US20060040509A1 Composition for preparing nanoporous material 失效
标题翻译：用于制备纳米多孔材料的组合物
公开(公告)号：US20060040509A1
公开(公告)日：2006-02-23
申请号：US11002187
申请日：2004-12-03
申请人： Jin Yim , Byoung Choi , Duk An
发明人： Jin Yim , Byoung Choi , Duk An
IPC分类号： H01L21/31
CPC分类号： C07H3/06 , B82Y30/00 , C01G1/00 , C01G1/02 , C01P2006/16 , C08B37/0012 , C08J9/0071 , C08J9/26 , C08J2201/046 , C08J2383/04 , C08L5/16 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S977/706 , Y10S977/78 , Y10S977/781 , C08L83/00
摘要： Disclosed herein is a composition for preparing a nanoporous material. The composition comprises i) a cyclodextrin derivative, ii) a thermostable matrix precursor, and iii) a solvent for dissolving the components i) and ii). The composition enables the preparation of a low dielectric constant film in which nanopores with a size of 20 Å or less are uniformly distributed.
摘要翻译：本文公开了一种用于制备纳米多孔材料的组合物。组合物包含i）环糊精衍生物，ii）热稳定基质前体，和iii）用于溶解组分i）和ii）的溶剂。该组合物能够制备其中尺寸为20或更小的纳米孔均匀分布的低介电常数膜。

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