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    • 8. 发明授权
    • Method of manufacturing a carbon nano-tube transistor
    • 制造碳纳米管晶体管的方法
    • US07585718B2
    • 2009-09-08
    • US11932994
    • 2007-10-31
    • Hong ChoSeung-Pil ChungHong Sik YoonKyung-Rae Byun
    • Hong ChoSeung-Pil ChungHong Sik YoonKyung-Rae Byun
    • H01L21/336H01L21/335
    • H01L51/057B82Y10/00H01L51/0048Y10T29/49105
    • A multilayer insulating structure including a first stop layer, a first insulating layer and a second stop layer is formed on the first conductive structure. A second conductive structure and a second insulating layer are formed on the first conductive structure. The second insulating layer and the second conductive structure are etched to form a first hole and a second hole having a first radius. A spacer is formed on sidewalls of the first and second holes. The second stop layer and the first insulating layer are etched using the spacer as an etch mask to form a third hole having a second radius smaller than the first radius. A sacrificial filler is formed on the first stop layer to fill the third hole. After removing the spacer, the sacrificial filler is removed. The first stop layer is etched. A carbon nano-tube is grown from the first conductive structure.
    • 在第一导电结构上形成包括第一阻挡层,第一绝缘层和第二阻挡层的多层绝缘结构。 在第一导电结构上形成第二导电结构和第二绝缘层。 蚀刻第二绝缘层和第二导电结构以形成具有第一半径的第一孔和第二孔。 间隔件形成在第一孔和第二孔的侧壁上。 使用间隔物作为蚀刻掩模蚀刻第二阻挡层和第一绝缘层,以形成具有小于第一半径的第二半径的第三孔。 在第一停止层上形成牺牲填料以填充第三孔。 去除间隔物后,去除牺牲填料。 第一个停止层被蚀刻。 从第一导电结构生长碳纳米管。