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    • 1. 发明授权
    • Level shifter for gate driver
    • 门驱动器电平移位器
    • US07598771B2
    • 2009-10-06
    • US12024113
    • 2008-02-01
    • Hung-Chun ChenKo-Yu ChiangChen-Pang KungMing-Daw Chen
    • Hung-Chun ChenKo-Yu ChiangChen-Pang KungMing-Daw Chen
    • H03K19/0175
    • H03K19/018521
    • A level shifter for a gate driver has a driving transistor, a reset transistor, a charge/discharge circuit, a threshold voltage detector, and a memory capacitor. An initial threshold voltage of the driving transistor is detected by the threshold voltage detector, and then memorized in the memory capacitor. The charge/discharge circuit charges or discharges the capacitor, and receives a control signal to actuate the level shifter. The reset transistor receives an output signal of a next stage level shifter as a reset signal, so as to restore the initial status of the level shifter. In this way, the driving current output from the level shifter is irrelevant to the threshold voltage of the driving transistor.
    • 用于栅极驱动器的电平移位器具有驱动晶体管,复位晶体管,充电/放电电路,阈值电压检测器和存储电容器。 驱动晶体管的初始阈值电压由阈值电压检测器检测,然后存储在存储电容器中。 充电/放电电路对电容器进行充电或放电,并接收控制信号以致动电平转换器。 复位晶体管接收下一级电平移位器的输出信号作为复位信号,以恢复电平移位器的初始状态。 以这种方式,从电平移位器输出的驱动电流与驱动晶体管的阈值电压无关。
    • 2. 发明申请
    • LEVEL SHIFTER FOR GATE DRIVER
    • 门锁驱动器的水平移位器
    • US20080186058A1
    • 2008-08-07
    • US12024113
    • 2008-02-01
    • Hung-Chun ChenKo-Yu ChiangChen-Pang KungMing-Daw Chen
    • Hung-Chun ChenKo-Yu ChiangChen-Pang KungMing-Daw Chen
    • H03K19/0175
    • H03K19/018521
    • A level shifter for a gate driver has a driving transistor, a reset transistor, a charge/discharge circuit, a threshold voltage detector, and a memory capacitor. An initial threshold voltage of the driving transistor is detected by the threshold voltage detector, and then memorized in the memory capacitor. The charge/discharge circuit charges or discharges the capacitor, and receives a control signal to actuate the level shifter. The reset transistor receives an output signal of a next stage level shifter as a reset signal, so as to restore the initial status of the level shifter. In this way, the driving current output from the level shifter is irrelevant to the threshold voltage of the driving transistor.
    • 用于栅极驱动器的电平移位器具有驱动晶体管,复位晶体管,充电/放电电路,阈值电压检测器和存储电容器。 驱动晶体管的初始阈值电压由阈值电压检测器检测,然后存储在存储电容器中。 充电/放电电路对电容器进行充电或放电,并接收控制信号以致动电平转换器。 复位晶体管接收下一级电平移位器的输出信号作为复位信号,以恢复电平移位器的初始状态。 以这种方式,从电平移位器输出的驱动电流与驱动晶体管的阈值电压无关。
    • 6. 发明申请
    • Floor Frame
    • US20220112729A1
    • 2022-04-14
    • US17489949
    • 2021-09-30
    • Hung-Chun Chen
    • Hung-Chun Chen
    • E04F15/024
    • A floor frame includes at least two spaced longitudinal support strips and at least one lateral support strip. Each longitudinal support strip has longitudinal upper and lower portions and a pair of longitudinal side walls. A shoulder is designed on at least one of the pair longitudinal side walls and located between the longitudinal upper and lower portions. Two shoulders of the two longitudinal support strips are opposite to each other. The lateral support strip includes lateral upper and lower portions and a pair of lateral side walls. Two ends of the lateral support strip are placed on the two shoulders of the longitudinal support strips, respectively. A plurality of longitudinal and lateral support strips constitutes a grid-type structure under the distribution of longitudinal and lateral directions to provide the placement and fixation of a plurality of floor panels.
    • 9. 发明授权
    • Method for loading configuration data onto a non-volatile memory and a device using the same
    • 将配置数据加载到非易失性存储器和使用其的设备的方法
    • US07516316B2
    • 2009-04-07
    • US11280319
    • 2005-11-17
    • Chi-Tung ChangHung-Chun ChenChing-Wen Wang
    • Chi-Tung ChangHung-Chun ChenChing-Wen Wang
    • G06F9/00
    • G11C16/20
    • A method for loading configuration data onto a non-volatile memory and the device using the same is provided. A non-volatile memory block is preloaded with a certain compatible memory configuration data in advance when the memory device is being manufactured. The memory configuration data comprises plural parameters corresponding to the non-volatile memory. When readying the memory device, the preloaded configuration data is loaded onto a random-access memory thereof so as to save the space in a read-only memory used for storing the memory's identification and its specification. Additionally, means for loading the configuration data from the preload zone onto the random-access memory is introduced to update the firmware.
    • 提供了一种用于将配置数据加载到非易失性存储器上的方法和使用其的设备。 当制造存储器件时,非易失性存储器块预先装载有一些兼容的存储器配置数据。 存储器配置数据包括对应于非易失性存储器的多个参数。 当准备存储器件时,将预加载的配置数据加载到随机存取存储器中,以便将空间保存在用于存储存储器标识及其规范的只读存储器中。 此外,引入用于将配置数据从预载区域加载到随机存取存储器上的装置来更新固件。
    • 10. 发明申请
    • Method for loading configuration data onto a non-volatile memory and a device using the same
    • 将配置数据加载到非易失性存储器和使用其的设备的方法
    • US20070055854A1
    • 2007-03-08
    • US11280319
    • 2005-11-17
    • Chi-Tung ChangHung-Chun ChenChing-Wen Wang
    • Chi-Tung ChangHung-Chun ChenChing-Wen Wang
    • G06F9/00
    • G11C16/20
    • A method for loading configuration data onto a non-volatile memory and the device using the same is provided. A non-volatile memory block is preloaded with a certain compatible memory configuration data in advance when the memory device is being manufactured. The memory configuration data comprises plural parameters corresponding to the non-volatile memory. When readying the memory device, the preloaded configuration data is loaded onto a random-access memory thereof so as to save the space in a read-only memory used for storing the memory's identification and its specification. Additionally, means for loading the configuration data from the preload zone onto the random-access memory is introduced to update the firmware.
    • 提供了一种用于将配置数据加载到非易失性存储器上的方法和使用其的设备。 当制造存储器件时,非易失性存储器块预先装载有一些兼容的存储器配置数据。 存储器配置数据包括对应于非易失性存储器的多个参数。 当准备存储器件时,将预加载的配置数据加载到随机存取存储器中,以便将空间保存在用于存储存储器标识及其规范的只读存储器中。 此外,引入用于将配置数据从预载区域加载到随机存取存储器上的装置来更新固件。