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    • 1. 发明申请
    • Tungsten heat sink structures in a thin film magnetic head
    • 钨散热器结构在薄膜磁头中
    • US20060098337A1
    • 2006-05-11
    • US10985527
    • 2004-11-10
    • Hung-Chin GuthrieMing JiangSamuel Yuan
    • Hung-Chin GuthrieMing JiangSamuel Yuan
    • G11B5/147G11B5/127
    • G11B5/3967G11B5/3106G11B5/3133G11B5/3136
    • A magnetic head having one or more tungsten heat sinks is disposed within the magnetic head to draw heat away from the components of the head to limit unwanted thermal expansion and protrusion of the components of the magnetic head into the air bearing gap. In a first embodiment, a tungsten heat sink is fabricated upon the magnetic head substrate, immediately prior to the fabrication of the first magnetic shield. In another embodiment, a tungsten heat sink is fabricated immediately following the fabrication of the second magnetic shield. In a further embodiment the tungsten heat sink is fabricated following the fabrication of the second magnetic pole of the write head portion of the magnetic head. An enhanced embodiment may contain two or all three of the heat sinks described above. In fabricating the heat sinks, photolithographic fabrication techniques, as are well known to those skilled in the art, are utilized.
    • 具有一个或多个钨散热器的磁头设置在磁头内以将热量从磁头的部件吸走,以限制磁头的不必要的热膨胀和突出到空气轴承间隙中。 在第一实施例中,在制造第一磁屏蔽之前,在磁头基板上制造钨散热器。 在另一个实施例中,在制造第二磁屏蔽之后立即制造钨散热器。 在另一实施例中,在制造磁头的写入头部分的第二磁极之后制造钨散热器。 增强的实施例可以包含上述两个或所有三个散热器。 在制造散热器时,利用本领域技术人员公知的光刻制造技术。
    • 3. 发明授权
    • Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
    • 基于中心到边缘模型的用于CMP径向均匀性优化的背侧压力的运行控制控制
    • US07722436B2
    • 2010-05-25
    • US11832455
    • 2007-08-01
    • Hung-Chin GuthrieMing JiangYeak-Chong Wong
    • Hung-Chin GuthrieMing JiangYeak-Chong Wong
    • B24B49/00
    • B24B49/03B24B37/042
    • During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.
    • 在晶片的平坦化期间,在通过化学机械抛光对晶片进行平面化之后,在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型,控制称为“后侧压力”的化学机械抛光的参数。背面压力在一些实施例中通过基于 中心到边缘轮廓模型,模型的确定系数R平方和背侧压力的当前值。 注意,仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来,将从模型确定的背面压力用于平面化后续晶片。
    • 5. 发明申请
    • METHODS FOR FABRICATING A MAGNETIC HEAD READER USING A CHEMICAL MECHANICAL POLISHING (CMP) PROCESS FOR SENSOR STRIPE HEIGHT PATTERNING
    • 使用化学机械抛光(CMP)方法制造磁头阅读器的方法用于传感器条带高度图案
    • US20080274623A1
    • 2008-11-06
    • US11743404
    • 2007-05-02
    • Hung-Chin GuthrieYing HongMing Jiang
    • Hung-Chin GuthrieYing HongMing Jiang
    • H01L21/302
    • G11B5/3163G11B5/3169
    • Methods for fabricating TMR and CPP GMR magnetic heads using a chemical mechanical polishing (CMP) process with a patterned CMP conductive protective layer for sensor stripe height patterning. The method comprises defining a stripe height of a read sensor of a magnetic head reader. The method further comprises refill depositing an insulator layer on the read sensor. The method further comprises performing a CMP process down to the conductive protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the insulator layer above the conductive protective layer and to remove a sensor pattern masking structure on the conductive protective layer. As a result, the insulator layer is planarized and smooth with the read sensor, eliminating fencing and alumina bumps typically encountered in the insulator layer at the edge of the patterned sensor.
    • 使用化学机械抛光(CMP)工艺制造TMR和CPP GMR磁头的方法,具有用于传感器条纹高度图案化的图案化CMP导电保护层。 该方法包括定义磁头读取器的读取传感器的条带高度。 该方法还包括在读取的传感器上填充沉积绝缘体层。 该方法还包括在限定读取的传感器的同时,在读取的传感器上执行CMP处理,以去除传感器保护层上方的绝缘体层的过度填充部分,并且去除导电保护层上的传感器图案掩蔽结构 层。 结果,绝缘体层与读取传感器平坦化并且平滑,消除了在图案化传感器的边缘处的绝缘体层中通常遇到的栅栏和氧化铝凸块。
    • 7. 发明授权
    • Method for fabricating thin film magnetic heads using CMP with polishing stop layer
    • 使用具有抛光停止层的CMP制造薄膜磁头的方法
    • US07279424B2
    • 2007-10-09
    • US10928002
    • 2004-08-27
    • Hung-Chin GuthrieMing JiangHong Zhang
    • Hung-Chin GuthrieMing JiangHong Zhang
    • H01L21/302
    • B82Y25/00G11B5/3163G11B5/3169
    • A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.
    • 描述了使用具有二氧化硅停止层的所选CMP浆料进行薄膜处理的方法。 浆料包括研磨剂,优选氧化铝,腐蚀抑制剂,优选苯并三唑(BTA)和优选过氧化氢的氧化剂。 该方法对于制造其中使用氧化铝作为电介质的薄膜头特别有用。 该方法可用于平面化由磁头中的氧化铝包围的金属结构。 氧化铝填充物沉积到稍低于金属高度的最终目标高度。 在氧化铝上沉积薄的二氧化硅阻挡层。 使用所选择的浆料执行CMP以将晶片平坦化到停止层。 优选地,仅剩下可忽略量的止挡层,并且金属结构的高度与再填充氧化铝的沉积高度基本相同。