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    • 1. 发明授权
    • Optical stress generator and detector
    • 光应力发生器和探测器
    • US06208421B1
    • 2001-03-27
    • US09512141
    • 2000-02-23
    • Humphrey J. MarisRobert J Stoner
    • Humphrey J. MarisRobert J Stoner
    • G01N2100
    • G01N21/1702G01N29/0681G01N29/2418G01N2291/02827G01N2291/02881G01N2291/0426G01N2291/0427Y10S977/834Y10S977/90Y10S977/901Y10S977/955Y10S977/956
    • Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.
    • 公开了一种用于通过测量其薄膜和薄膜的机械和热性能来表征薄膜和界面的系统。 在系统中,光被薄膜吸收或由几个薄膜构成的结构中,并且测量和分析光学透射或反射的变化。 反射或透射的变化用于提供关于在结构中产生的超声波的信息。 从使用本发明的测量方法和装置获得的信息可以包括:(a)与先前的方法相比,以与速度和准确性相比较的速度和准确度确定薄膜的厚度; (b)确定薄膜的热,弹性和光学性能; (c)确定薄膜中的应力; 和(d)表征界面的性质,包括粗糙度和缺陷的存在。
    • 3. 发明申请
    • ENHANCED ULTRA-HIGH RESOLUTION ACOUSTIC MICROSCOPE
    • 增强超分辨率声学显微镜
    • US20110036171A1
    • 2011-02-17
    • US12449415
    • 2008-02-05
    • Humphrey J. MarisArto V. Nurmikko
    • Humphrey J. MarisArto V. Nurmikko
    • G01N29/00
    • G01N29/0681G01N29/2418G01S15/8965G10K15/046
    • An optical-acoustic transducer structure includes at least one metal or semiconducting film in which a part of a pump light pulse is absorbed to generate a sound pulse; and at least one dielectric film. The thicknesses and optical properties of the at least one metal or semiconducting film and the at least one dielectric film are selected so that a returning sound pulse results in a measurable change in the optical reflectivity and/or some other optical characteristic of the transducer structure. The transducer structure includes a resonant cavity, and an output surface that is shaped so as to provide no significant focusing of generated sound waves when the sound waves are launched towards a surface of the sample.
    • 光声换能器结构包括至少一个金属或半导体膜,其中泵浦光脉冲的一部分被吸收以产生声脉冲; 和至少一个电介质膜。 选择至少一种金属或半导体膜和至少一种电介质膜的厚度和光学性质,使得返回的声脉冲导致换能器结构的光学反射率和/或某些其他光学特性的可测量的变化。 换能器结构包括谐振腔和输出表面,其被形成为当声波朝向样品的表面发射时不产生所产生的声波的显着聚焦。
    • 6. 发明授权
    • Apparatus and method for measurement of the mechanical properties and
electromigration of thin films
    • 用于测量薄膜的机械性能和电迁移的装置和方法
    • US6025918A
    • 2000-02-15
    • US111456
    • 1998-07-07
    • Humphrey J. Maris
    • Humphrey J. Maris
    • G01N21/17G01B11/00
    • G01N21/1717
    • A method for characterizing a sample comprising the steps of depositing the sample on a substrate, measuring a first change in optical response of the sample, changing the lateral strain of the sample, measuring a second change in optical response of the sample, comparing the second change in optical response of with the first change in optical response and associating a difference between the second change and the first change in optical response with a property of interest in the sample. The measurement of the first change in optical response is made with the sample having an initial lateral strain. The measurement of the second change in optical response is made after the lateral strain in the sample is changed from the initial lateral strain to a different lateral strain. The second change in optical response is compared to the first change in optical response to find the difference between the second change and the first change.
    • 一种用于表征样品的方法,包括以下步骤:将样品沉积在基底上,测量样品的光学响应的​​第一变化,改变样品的横向应变,测量样品的光学响应的​​第二变化,将第二 随着光学响应的​​第一变化而改变光学响应,并且利用样品中感兴趣的属性将光响应的第二变化与第一变化之间的差值相关联。 用具有初始侧向应变的样品进行光响应的第一变化的测量。 在样品中的横向应变从初始侧向应变变为不同的横向应变之后,进行光学响应的​​第二变化的测量。 将光响应的第二变化与光响应的第一变化进行比较,以找出第二变化与第一变化之间的差异。