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    • 4. 发明授权
    • Field effect transistor, especially for use as a sensor element or acceleration sensor
    • 场效应晶体管,特别用作传感器元件或加速度传感器
    • US06724023B2
    • 2004-04-20
    • US09838062
    • 2001-04-19
    • Klaus HeyersBernhard Elsner
    • Klaus HeyersBernhard Elsner
    • H01L2984
    • H01L29/84G01P15/0802G01P15/124G01P2015/0814
    • A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.
    • 描述适合用作传感器元件或加速度传感器的场效应晶体管。 为此,平面衬底内的场效应晶体管具有通过沟道区彼此分离的漏极区和源极区。 此外,提供栅极电极,其布置成在沟道区域上基板上基本上自支撑。 栅电极被柔性地支撑,使得作用在其上的具有与衬底的表面平行的部件的外力导致栅极平行于衬底的表面的偏转。 还描述了一种方法,其中在第一方法步骤中,在CMOS工艺中制造或制造具有漏极区域,源极区域和沟道区域的集成电路,此后,在第二方法步骤中, 使用电镀添加剂技术在集成电路上产生基本上自支撑的栅电极。
    • 6. 发明授权
    • Manufacturing method for a micromechanical device
    • 微机械装置的制造方法
    • US06290858B1
    • 2001-09-18
    • US09416721
    • 1999-10-13
    • Josef HirtreiterBernhard Elsner
    • Josef HirtreiterBernhard Elsner
    • B44C122
    • B81C1/00126B81B2201/047B81B2203/0307
    • A manufacturing method for a micromechanical device. In this method, a substrate is prepared with a plating base area to accommodate an anchoring region, and an adhesive layer is formed and structured on the substrate, so that the anchoring region is formed in the plating base area in the form of a quasi-insular region in a recess of the adhesive layer. The quasi-insular region is connected to the adhesive layer outside of the plated based area by at least one thin web. A mask is formed on the adhesive layer and structured so that the anchoring region and an overgrowth region adjacent to the anchoring region remain unmasked. An electroplated layer is deposited on the unmasked anchoring region so that the overgrowth region is overgrown, and the mask and the part of the adhesive layer that has not been overgrown are removed.
    • 一种微机械装置的制造方法。 在该方法中,制备具有电镀基底面积以容纳锚定区域的基板,并且在基板上形成并构造粘合剂层,使得锚定区域以准准地形成在电镀基区域中, 在粘合剂层的凹部中的岛状区域。 准岛状区域通过至少一个薄网连接到电镀基区域外的粘合剂层。 在粘合剂层上形成掩模,并且构造成使锚定区域和与锚固区域相邻的过度生长区域保持未被遮蔽。 在未掩蔽的锚定区域上沉积电镀层,使得过度生长区域过度生长,并且除去掩模和尚未长满的粘合剂层的部分。
    • 8. 发明授权
    • Methods for plasma etching of silicon
    • 硅等离子体蚀刻方法
    • US07166536B1
    • 2007-01-23
    • US09720761
    • 2000-03-16
    • Franz LaermerAndrea SchilpBernhard Elsner
    • Franz LaermerAndrea SchilpBernhard Elsner
    • H01L21/302
    • H01L21/3065Y02C20/30Y02P70/605
    • A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF3, BrF3, or IF5 is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF3 is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.
    • 使用工艺气体的硅衬底中的横向限定结构的等离子体蚀刻(特别是各向异性等离子体蚀刻)的方法至少包括至少一次在横向限定的结构的侧壁上析出的钝化材料 在蚀刻之前和/或期间。 在示例性方法中,将至少一种选自ClF 3 3,BrF 3或IF 5的化合物加入到该方法 气体作为输送氧气的蚀刻气体。 在另一示例性方法中,至少不时地将NF 3 N作为消耗钝化材料的添加剂加入到工艺气体中。 最后,在另一示例性方法中,至少不时地向工艺气体添加轻质且易于电离的气体,特别是H 2,He或Ne。 可以组合三种示例性方法。
    • 10. 发明授权
    • Sensor, sensor system, and method for remotely sensing a variable
    • 传感器,传感器系统和远程感测变量的方法
    • US06897775B2
    • 2005-05-24
    • US10275162
    • 2001-04-05
    • Bernhard ElsnerHenry Heidemeyer
    • Bernhard ElsnerHenry Heidemeyer
    • G01S13/74G01S13/75G08C17/02G08B1/08H04Q7/00
    • G08C17/02G01S13/753
    • A sensor system for remote detection of a measurable variable includes a sensor, with a first resonator (5) which has a resonant frequency that is variable under the influence of the measurable variable; an antenna (1) for sending and receiving a modulated high-frequency signal; a modem (2) for coupling the first resonator (5) to the antenna; and a second resonator (3) that can be excited by a carrier frequency of the high-frequency signal. An interrogation unit generates an inquiry radio signal for exciting the two resonators and interrupts the broadcasting of the inquiry radio signal in order to receive a response radio signal broadcast by the sensor.
    • 用于远程检测可测量变量的传感器系统包括具有第一谐振器(5)的传感器,所述第一谐振器(5)具有在可测量变量的影响下可变的谐振频率; 用于发送和接收调制高频信号的天线(1); 调制解调器(2),用于将第一谐振器(5)耦合到天线; 以及能够被高频信号的载波频率激励的第二谐振器(3)。 询问单元生成用于激励两个谐振器的查询无线电信号,并中断查询无线电信号的广播,以便接收由传感器广播的响应无线电信号。