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1. 发明授权

US07166536B1 Methods for plasma etching of silicon 有权
标题翻译：硅等离子体蚀刻方法
公开(公告)号：US07166536B1
公开(公告)日：2007-01-23
申请号：US09720761
申请日：2000-03-16
申请人： Franz Laermer , Andrea Schilp , Bernhard Elsner
发明人： Franz Laermer , Andrea Schilp , Bernhard Elsner
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , Y02C20/30 , Y02P70/605
摘要： A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF3, BrF3, or IF5 is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF3 is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.
摘要翻译：使用工艺气体的硅衬底中的横向限定结构的等离子体蚀刻（特别是各向异性等离子体蚀刻）的方法至少包括至少一次在横向限定的结构的侧壁上析出的钝化材料在蚀刻之前和/或期间。在示例性方法中，将至少一种选自ClF 3 3，BrF 3或IF 5的化合物加入到该方法气体作为输送氧气的蚀刻气体。在另一示例性方法中，至少不时地将NF 3 N作为消耗钝化材料的添加剂加入到工艺气体中。最后，在另一示例性方法中，至少不时地向工艺气体添加轻质且易于电离的气体，特别是H 2，He或Ne。可以组合三种示例性方法。

2. 发明授权

US06531031B1 Plasma etching installation 有权
标题翻译：等离子刻蚀安装
公开(公告)号：US06531031B1
公开(公告)日：2003-03-11
申请号：US09623734
申请日：2000-11-22
申请人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
发明人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
IPC分类号： H01L2100
CPC分类号： H01J37/321
摘要： A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.
摘要翻译：一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。具有第一线圈端和第二线圈端的ICP线圈，其在反应器中产生作用于反应气体的高频电磁交变场，并且作为电感耦合等离子体源，从反应性粒子和离子产生高密度等离子体。两个线圈端各自通过馈电点与高频电源进行通信，每种情况都适用于高频电源。相同频率的电压到第一线圈端和第二线圈端（21,21'）。两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络，并且至少几乎相互相反地并且具有至少接近于相同的幅度。

3. 发明授权

US5501893A Method of anisotropically etching silicon 失效
标题翻译：各向异性蚀刻硅的方法
公开(公告)号：US5501893A
公开(公告)日：1996-03-26
申请号：US284490
申请日：1994-08-05
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302 , B81C1/00 , H01L21/3065 , H01L21/308 , C25F3/12 , B44C1/22
CPC分类号： H01L21/3085 , B81C1/00619 , H01L21/3065 , H01L21/30655 , B81C2201/0112 , Y10T428/24521
摘要： A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.
摘要翻译： PCT No.PCT / DE93 / 01129 Sec。 371日期：1994年8月5日 102（e）日期1994年8月5日PCT提交1993年11月27日PCT公布。出版物WO94 / 14187 日期：1994年6月23日。一种通过使用等离子体的蚀刻掩模在其中提供横向限定的凹陷结构的硅的各向异性等离子体蚀刻的方法，所述方法包括在蚀刻步骤中的各向异性等离子体蚀刻，所述硅的表面通过与反应性蚀刻气体以从硅表面去除材料并提供暴露的表面; 在聚合步骤中将包含在等离子体中的至少一种聚合物前体聚合到硅的表面上，在该表面处，在前面的蚀刻步骤中暴露的表面被聚合物层覆盖，从而形成临时蚀刻停止; 并交替重复蚀刻步骤和聚合步骤。该方法与蚀刻结构的非常高的各向异性同时提供高掩模选择性。

4. 发明授权

US06720273B1 DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS 有权
标题翻译：使用等离子体蚀刻安装的基板的高频蚀刻的装置和方法以及用于点燃等离子体并用于脉冲等离子体输出或调整相同UPWARDS的方法
公开(公告)号：US06720273B1
公开(公告)日：2004-04-13
申请号：US09763138
申请日：2001-04-20
申请人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
发明人： Volker Becker , Franz Laermer , Andrea Schilp , Thomas Beck
IPC分类号： H01L213065
CPC分类号： H01J37/32174 , C30B33/12 , H01J37/32082 , H01L21/3065 , H01L21/30655 , H01L21/3085 , H01L21/3086
摘要： A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma (14), is proposed. In the process, the plasma (14) is produced by a plasma source (13) to which a high-frequency generator (17) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source (13). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator (17) to the prevailing impedance of the plasma source (13) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source (13) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma (14) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.
摘要翻译：提出了一种借助于等离子体（14）能够进行优选地各向异性地蚀刻衬底（10）特别是图案化硅体的装置和方法。在该过程中，等离子体（14）由连接有高频发生器（17）的等离子体源（13）产生，以施加高频电力。此外，该高频发生器与周期性地改变施加到等离子体源（13）的高频功率的第一装置通信。此外，优选地对于将高频发生器（17）的输出阻抗适配为等离子体源（13）的主要阻抗（其随高频功率变化而变化）的第二装置进行设置。所提出的各向异性蚀刻方法在分离和交替的蚀刻和聚合步骤中进行，在蚀刻步骤期间至少暂时施加高达5000瓦特的高频功率至等离子体源（13）比在沉积期间更高脚步。所提出的装置还适用于点燃等离子体（14）并且用于将等离子体功率从起始值向上调节或脉冲至高达5000瓦特。

5. 发明授权

US06531068B2 Method of anisotropic etching of silicon 有权
标题翻译：硅各向异性蚀刻方法
公开(公告)号：US06531068B2
公开(公告)日：2003-03-11
申请号：US09328019
申请日：1999-06-08
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L21308
CPC分类号： H01L21/3065
摘要： A method of anisotropic etching of silicon with structures, preferably defined with an etching mask, by using a plasma, with a polymer being applied during a polymerization step to the lateral border of the structures defined by the etching mask, then being partially removed again during the following etching step and being redeposited in deeper side walls of the structure newly formed due to the etching reaction, and the etching is performed with an etching gas containing 3 to 40 vol % oxygen. In this way it is possible to prevent sulfur contamination in the exhaust gas area in high rate etching of silicon.
摘要翻译：通过使用等离子体，优选用蚀刻掩模限定的硅，在聚合步骤期间将聚合物施加到由蚀刻掩模限定的结构的侧边缘上的各向异性蚀刻硅的方法，然后再次在以下蚀刻步骤，并且由于蚀刻反应而重新沉积在新形成的结构的更深的侧壁中，并且用含有3至40体积％氧气的蚀刻气体进行蚀刻。以这种方式，可以在硅的高速蚀刻中防止废气区域中的硫污染。

6. 发明授权

US06324910B1 Method and device for measuring a physical variable 有权
标题翻译：用于测量物理变量的方法和装置
公开(公告)号：US06324910B1
公开(公告)日：2001-12-04
申请号：US09284907
申请日：1999-06-22
申请人： Karsten Funk , Hans-Martin Kulcke , Franz Laermer , Andrea Schilp
发明人： Karsten Funk , Hans-Martin Kulcke , Franz Laermer , Andrea Schilp
IPC分类号： G01H1300
CPC分类号： G01P15/097 , G01C19/5726 , G01P2015/0814
摘要： A method for measuring a physical variable in which a structure is put in resonant oscillations and a change in the oscillation frequency of the structure as a result of a change in the physical variable to be measured is detected, and a frequency-analog signal is provided. A structure oscillating with a resonance frequency receives an electrostatic force.
摘要翻译：检测结构被置于共振振荡中的物理变量的测量方法以及由待测物理变化引起的结构振荡频率的变化的方法，并提供频率模拟信号。以共振频率振荡的结构接收静电力。

7. 发明授权

US06303512B1 Anisotropic, fluorine-based plasma etching method for silicon 有权
标题翻译：硅各向异性，氟基等离子体蚀刻方法
公开(公告)号：US06303512B1
公开(公告)日：2001-10-16
申请号：US09171516
申请日：1999-04-29
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L213065
CPC分类号： H01L21/30655 , H01L21/3065
摘要： A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is described. Protective layers made of at least one silicon compound with a second reaction partner that is entirely compatible with the chemistry of the etching process are deposited before and/or during plasma etching onto the sidewalls of the laterally defined patterns.
摘要翻译：描述了硅衬底中侧向限定图案的各向异性等离子体蚀刻的方法。由与至少一种硅化合物制成的保护层与第二反应对象制成，其与蚀刻工艺的化学完全相容，在等离子体蚀刻之前和/或等离子体蚀刻之间沉积到横向限定图案的侧壁上。

8. 发明授权

US06200822B1 Method for detecting the transition between different materials in semiconductor structures 失效
标题翻译：用于检测半导体结构中不同材料之间的转变的方法
公开(公告)号：US06200822B1
公开(公告)日：2001-03-13
申请号：US09269007
申请日：1999-06-17
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L2100
CPC分类号： H01J37/32963 , H01J37/32935 , H01L21/30655 , H01L22/26
摘要： A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining, by way of an intensity measurement of at least one specific substance contained in the plasma, the beginning of each etching step by the fact that a characteristic threshold is reached, this also being achievable by way of an external synchronization signal which indicates the beginning and end of each etching step; for then, when the threshold value is reached, starting a delay time which is longer than the course of a first concentration maximum; for a second concentration maximum then to be ascertained after the delay time has elapsed; and for the second concentration maxima of the etching steps to be monitored as to whether they exceed or fall below the predefined value, in order to detect a material transition.
摘要翻译：一种用于在交替蚀刻期间检测半导体结构中的不同材料之间的转变的方法以及使用等离子体进行的限定图案的各向异性深度蚀刻的覆盖步骤。提供了通过对等离子体中包含的至少一种特定物质的强度测量来确定通过达到特征阈值的事实开始每个蚀刻步骤，这也可以通过外部同步信号来实现其表示每个蚀刻步骤的开始和结束; 然后，当达到阈值时，启动比第一浓度最大值的过程更长的延迟时间; 对于第二浓度最大值，然后在延迟时间过去之后确定; 并且为了监测蚀刻步骤的第二浓度最大值是否超过或低于预定值，为了检测材料转变。

9. 发明授权

US07094706B2 Device and method for etching a substrate by using an inductively coupled plasma 有权
公开(公告)号：US07094706B2
公开(公告)日：2006-08-22
申请号：US10763010
申请日：2004-01-21
申请人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
发明人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , H01J37/3266 , H01L21/3065
摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

10. 发明授权

US06911348B1 Device and method for determining the lateral undercut of a structured surface layer 失效
标题翻译：用于确定结构化表面层的横向底切的装置和方法
公开(公告)号：US06911348B1
公开(公告)日：2005-06-28
申请号：US09674984
申请日：2000-03-13
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： B81C99/00 , H01L21/02 , H01L21/66 , H01L21/00
CPC分类号： H01L28/10 , B81C99/004 , H01L22/12
摘要： A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.
摘要翻译：用于确定牺牲层上的结构化表面层的至少局部侧向底切的程度的装置和方法。用于此目的的结构化表面层在本地具有至少一个无源电子部件，利用该被动电子部件可以确定与外侧底切的程度成比例的物理测量量。用于产生该装置的方法首先在第一蚀刻方法中在结构化表面层上提出至少局部地提供具有沟槽的结构的表面层，并且以第二蚀刻方法从沟槽进行至少承受局部地是结构化表面层的横向底切。在本文中，在表面层上的第一蚀刻方法中，局部地附加地描绘了至少一个无源电子部件，其响应于表面层的随后的底切也被切削。物理测量的数量是在不接触的情况下确定的，优选地通过向无源部件发送电磁辐射。

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