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1. 发明申请

US20060044690A1 Method and apparatus for manufacturing silicon sliders with reduced susceptibility to fractures 审中-公开
$Method and apparatus for manufacturing silicon sliders with reduced susceptibility to fractures$
标题翻译：用于制造具有降低的断裂敏感性的硅滑块的方法和装置
公开(公告)号：US20060044690A1
公开(公告)日：2006-03-02
申请号：US10930162
申请日：2004-08-31
申请人： Nicholas Buchan , Timothy Reiley
发明人： Nicholas Buchan , Timothy Reiley
IPC分类号： G11B5/60
CPC分类号： G11B5/102 , G11B5/3173
摘要： A method and apparatus for manufacturing silicon sliders with reduced susceptibility to fracture of the substrate from which they are manufactured is disclosed. A monocrystalline silicon wafer is formed having an orientation in the {100} crystallographic plane. The silicon wafer includes a notch for orienting the silicon wafer, wherein the notch is formed substantially in the direction. Sliders are formed from the silicon wafer.
摘要翻译：公开了一种用于制造硅基滑块的方法和装置，其具有降低的它们被制造的基板的断裂敏感性。形成在{100}晶面中具有取向的单晶硅晶片。硅晶片包括用于定向硅晶片的凹口，其中凹口基本上沿<100>方向形成。滑块由硅晶片形成。

2. 发明申请

US20050068680A1 Sliders bonded by a debondable nonstoichiometric encapsulant 失效
标题翻译：滑块由不可剥离的非化学计量密封剂粘合
公开(公告)号：US20050068680A1
公开(公告)日：2005-03-31
申请号：US10672011
申请日：2003-09-25
申请人： Nicholas Buchan , Michael Chaw , Sean Clemenza , Dan Dawson , Craig Hawker , James Hedrick , Wesley Hillman , Teddie Magbitang , Willi Volksen , Dennis McKean , Robert Miller
发明人： Nicholas Buchan , Michael Chaw , Sean Clemenza , Dan Dawson , Craig Hawker , James Hedrick , Wesley Hillman , Teddie Magbitang , Willi Volksen , Dennis McKean , Robert Miller
IPC分类号： G11B5/187 , G11B5/60
CPC分类号： G11B5/187 , G11B5/60
摘要： A slider assembly is provided comprising a plurality of sliders bonded by a debondable solid encapsulant. The solid encapsulant is comprised of a polymer prepared by polymerizing a mixture of first and second monomers in a nonstoichiometric ratio effective to render the encapsulant debondable. Each slider has a surface that is free from the encapsulant. The encapsulant-free surfaces are coplanar to each other. Also provided are methods for forming the assembly and methods for patterning a slider surface using the encapsulant.
摘要翻译：提供了一种滑块组件，其包括通过可剥离固体密封剂结合的多个滑块。固体密封剂由通过以非化学计量比聚合第一和第二单体的混合物而制备的聚合物有效地使密封剂脱粘。每个滑块具有没有密封剂的表面。无密封剂的表面彼此共面。还提供了用于形成组件的方法和使用密封剂来图案化滑块表面的方法。

3. 发明授权

US06318177B2 Micromechanical component and method for producing the micromechanical component 有权
标题翻译：微机械部件的制造方法和微机电部件的制造方法
公开(公告)号：US06318177B2
公开(公告)日：2001-11-20
申请号：US09302225
申请日：1999-04-29
申请人： Nicholas Buchan , Michael Fehrenbach , Dietrich Schubert
发明人： Nicholas Buchan , Michael Fehrenbach , Dietrich Schubert
IPC分类号： G01P15125
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00626 , B81C99/006 , G01P15/0802 , G01P2015/0814
摘要： A method for producing a micromechanical component (e.g., a capacitive acceleration sensor) having one or several electrical or mechanical function variables dependent on at least one geometric design parameter. The micromechanical component is produced by an etching process via which a structure with bars and trenches is formed. The structure is formed by drafting a design for the micromechanical component in such a way that the geometric design parameter within the local area of the micromechanical component is subject to a predetermined process-related regularity. The design parameter is essentially constant in relation to function blocks in particular, so that in the etching process, the process tolerance of the design parameter within the micromechanical component essentially shows no locus dependency.
摘要翻译：具有取决于至少一个几何设计参数的具有一个或几个电或机械功能变量的微机械部件（例如，电容加速度传感器）的方法。微机械部件通过蚀刻工艺产生，通过该工艺形成具有棒和沟槽的结构。通过以微机电部件的局部区域内的几何设计参数受到预定的与工艺有关的规则性的方式来绘制微机械部件的设计而形成该结构。设计参数特别是相对于功能块而言基本上是恒定的，因此在蚀刻工艺中，微机械组件内的设计参数的工艺公差基本上不显示轨迹依赖性。

4. 发明授权

US07396770B2 Post-parting etch to smooth silicon sliders 失效
标题翻译：后期蚀刻到光滑的硅滑块
公开(公告)号：US07396770B2
公开(公告)日：2008-07-08
申请号：US11329930
申请日：2006-01-10
申请人： Timothy Clark Reiley , Nicholas Buchan
发明人： Timothy Clark Reiley , Nicholas Buchan
IPC分类号： H01L21/302
CPC分类号： G11B5/102 , C09K13/08 , G11B5/3173
摘要： To smooth silicon sliders that have been parted from each other on a wafer by DRIE, an isotropic etch using fluorine either in a gas or in an aqueous solution is performed prior to separating the individual sliders from the wafer.
摘要翻译：为了平滑通过DRIE在晶片上彼此分离的硅滑块，在将各个滑块与晶片分离之前，进行在气体或水溶液中使用氟的各向同性蚀刻。

5. 发明授权

US5937275A Method of producing acceleration sensors 失效
标题翻译：生产加速度传感器的方法
公开(公告)号：US5937275A
公开(公告)日：1999-08-10
申请号：US809945
申请日：1997-10-27
申请人： Horst Munzel , Michael Offenberg , Klaus Heyers , Bernhard Elsner , Markus Lutz , Helmut Skapa , Heinz-Georg Vossenberg , Nicholas Buchan , Eckhard Graf
发明人： Horst Munzel , Michael Offenberg , Klaus Heyers , Bernhard Elsner , Markus Lutz , Helmut Skapa , Heinz-Georg Vossenberg , Nicholas Buchan , Eckhard Graf
IPC分类号： G01P15/08 , H01L29/84 , G01L23/10 , G01P15/09
CPC分类号： G01P15/0802
摘要： A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.
摘要翻译： PCT No.PCT / DE96 / 01236 Sec。 371日期1997年10月27日第 102（e）1997年10月27日PCT PCT 1996年7月9日PCT公布。第WO97 / 04319号公报日期1997年2月6日提出了一种用于制造加速度传感器的方法，其中使用沉积在外延应用系统中的硅层。在施加到基板（1）的牺牲层（2）上方，材料以具有一定表面粗糙度的多晶硅层（6）的形式生长。通过施加光致抗蚀剂和通过湿蚀刻工艺，可以消除该表面粗糙度。或者，考虑化学机械平滑化。

6. 发明申请

US20070158301A1 Post-parting etch to smooth silicon sliders 失效
标题翻译：后期蚀刻到光滑的硅滑块
公开(公告)号：US20070158301A1
公开(公告)日：2007-07-12
申请号：US11329930
申请日：2006-01-10
申请人： Timothy Reiley , Nicholas Buchan
发明人： Timothy Reiley , Nicholas Buchan
IPC分类号： B44C1/22 , C03C25/68 , C25F3/00
CPC分类号： G11B5/102 , C09K13/08 , G11B5/3173
摘要： To smooth silicon sliders that have been parted from each other on a wafer by DRIE, an isotropic etch using fluorine either in a gas or in an aqueous solution is performed prior to separating the individual sliders from the wafer.
摘要翻译：为了平滑通过DRIE在晶片上彼此分离的硅滑块，在将各个滑块与晶片分离之前，进行在气体或水溶液中使用氟的各向同性蚀刻。

7. 发明申请

US20050219754A1 Photoresist transfer pads 失效
标题翻译：光阻传输垫
公开(公告)号：US20050219754A1
公开(公告)日：2005-10-06
申请号：US10814933
申请日：2004-03-30
申请人： Nicholas Buchan , Cherngye Hwang , Timothy Reiley , Li Zheng
发明人： Nicholas Buchan , Cherngye Hwang , Timothy Reiley , Li Zheng
IPC分类号： G11B5/127 , G11B5/31 , G11B5/33 , G11B5/60 , G11B15/64 , G11B17/32 , G11B21/20
CPC分类号： G11B5/3163 , G11B5/313
摘要： A resist transfer pad and method of use are described for forming a uniform photoresist on the surface of a workpiece such as a slider. The resist transfer pad includes a layer of cured polydimethylsiloxane (PDMS) on a cushioning layer, e.g. silicone rubber, and an optional stiffening layer. The sliders are preferably mounted on a carrier or pallet. In one preferred embodiment the loaded resist transfer pads are applied to the slider surface by roll lamination where the loaded resist transfer pad is transported by a roller system using a cover-tape and pressed against the slider surface. Subsequently the cover-tape and the resist transfer pad are lifted off and the photoresist remains on the transducer. An alternative embodiment uses a vacuum, piston laminator to press the loaded resist transfer pad onto the surface of the transducer.
摘要翻译：描述了用于在诸如滑块的工件的表面上形成均匀光致抗蚀剂的抗蚀剂转移垫和使用方法。抗蚀剂传递垫包括缓冲层上固化的聚二甲基硅氧烷（PDMS）层，硅橡胶和可选的加强层。滑块优选地安装在托架或托盘上。在一个优选实施例中，负载的抗蚀剂转移垫通过辊压层施加到滑块表面，其中负载的阻挡层传送垫通过辊系统使用覆盖带传送并压靠在滑块表面上。随后，覆盖带和抗蚀剂传递垫被提起并且光致抗蚀剂保留在换能器上。替代实施例使用真空活塞层压机将负载的抗蚀剂转移垫压到换能器的表面上。

8. 发明授权

US6117701A Method for manufacturing a rate-of-rotation sensor 失效
标题翻译：旋转传感器的制造方法
公开(公告)号：US6117701A
公开(公告)日：2000-09-12
申请号：US907601
申请日：1997-08-08
申请人： Nicholas Buchan , Horst Muenzel , Franz Laermer , Michael Offenberg , Udo Bischof , Markus Lutz
发明人： Nicholas Buchan , Horst Muenzel , Franz Laermer , Michael Offenberg , Udo Bischof , Markus Lutz
IPC分类号： G01C19/56 , G01C19/5755 , G01C19/5769 , G01P15/08 , H01L29/84 , H01L41/08 , H01L21/00 , G01P15/00
CPC分类号： G01C19/5755 , G01C19/5769 , G01P15/0802 , G01P2015/0814
摘要： A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.
摘要翻译：旋转速度传感器包括三层系统。转速传感器和导体迹线从第三层图案化。导体迹线通过从第三层的其它区域的切口和与第一层的第二电绝缘层的切口电绝缘（隔离）。因此，实现了由三层系统构图的简单的电接触（构造）。由于在第一和第三层使用相同的蚀刻工艺，所以可以进行特别有效的制造。

9. 发明申请

US20050070118A1 Fabrication process for preparing recording head sliders made from silicon substrates with SiO2 overcoats 有权
标题翻译：制备由SiO 2外涂层由硅衬底制成的记录头滑块的制造工艺
公开(公告)号：US20050070118A1
公开(公告)日：2005-03-31
申请号：US10675203
申请日：2003-09-29
申请人： Nicholas Buchan , Timothy Reiley
发明人： Nicholas Buchan , Timothy Reiley
IPC分类号： G11B5/10 , H01L21/302 , H01L21/461
CPC分类号： G11B5/3173 , G11B5/102
摘要： A method for fabricating recording head sliders made from silicon substrates, is described. A Silicon wafer with a SiO2 overcoat is provided, and a layer of material which is resistant to Deep Reactive Ion Etching (DRIE) is deposited on the SiO2 overcoat. A patterned layer of material which is resistant to Reactive Ion Etching (RIE) is deposited on the layer of DRIE-resistant material to form a primary mask. RIE is used through the primary mask to pattern the SiO2 overcoat layer and the layer of DRIE-resistant material. The primary mask is then removing to expose the layer of DRIE-resistant material which has now been patterned to form a secondary mask. DRIE is then used through the secondary mask to cut the Si wafer into pieces. Finally, the secondary mask is removed.
摘要翻译：描述了由硅衬底制造记录头滑块的方法。提供具有SiO 2外涂层的硅晶片，并且将耐受深反应离子蚀刻（DRIE）的材料层沉积在SiO 2外涂层上。耐反应离子蚀刻（RIE）的图案化材料层沉积在抗DRIE材料层上以形成初级掩模。通过初级掩模使用RIE来图案化SiO2覆盖层和DRIE抗性材料层。然后去除主要掩模以暴露现在被图案化以形成二次掩模的耐DRIE材料层。然后通过二次掩模使用DRIE将Si晶片切成片。最后，二次掩模被去除。

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