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1. 发明授权

US07026242B2 Method for filling a hole with a metal 有权
标题翻译：用金属填充孔的方法
公开(公告)号：US07026242B2
公开(公告)日：2006-04-11
申请号：US10802411
申请日：2004-03-16
申请人： Hong-Seong Son , Sang-Rok Hah , Il-Goo Kim , Jun-Hwan Oh
发明人： Hong-Seong Son , Sang-Rok Hah , Il-Goo Kim , Jun-Hwan Oh
IPC分类号： H01L21/4763
CPC分类号： H01L21/2885 , H01L21/76877
摘要： In a method for filling a hole with a metal, an insulating layer, a first mask layer and a second mask layer are successively formed on a semiconductor substrate. The first and second mask layers are etched using a photoresist pattern to form first and second masks. The first mask layer pattern is selectively etched using an etchant, the first mask layer pattern having a higher etching selectivity than the second layer pattern with respect to the etchant, to form a third mask layer pattern having a broadened opening. The insulating layer is etched using the second mask to form a hole in the insulating layer. A metal layer is formed in the hole and the third opening. The metal layer is planarized to form a metal plug buried in the hole without recesses or voids.
摘要翻译：在用金属填充孔的方法中，在半导体衬底上依次形成绝缘层，第一掩模层和第二掩模层。使用光致抗蚀剂图案蚀刻第一和第二掩模层以形成第一和第二掩模。使用蚀刻剂选择性地蚀刻第一掩模层图案，第一掩模层图案相对于蚀刻剂具有比第二层图案更高的蚀刻选择性，以形成具有加宽开口的第三掩模层图案。使用第二掩模蚀刻绝缘层，以在绝缘层中形成孔。在孔和第三开口中形成金属层。金属层被平坦化以形成埋在孔中的金属塞，而没有凹陷或空隙。

2. 发明申请

US20080073787A1 Method forming metal interconnection filling recessed region using electro-plating technique 审中-公开
标题翻译：使用电镀技术形成金属互连填充凹陷区域的方法
公开(公告)号：US20080073787A1
公开(公告)日：2008-03-27
申请号：US11655156
申请日：2007-01-19
申请人： Jun-Hwan Oh , Hyoung-Sik Kim , Il-Goo Kim , Ju-Hyuck Chung
发明人： Jun-Hwan Oh , Hyoung-Sik Kim , Il-Goo Kim , Ju-Hyuck Chung
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/2885 , H01L21/32134 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L21/76877
摘要： A metal (e.g., copper) interconnect and related method of fabrication are disclosed in which the metal interconnect is formed by electro-plating a seed layer formed on a recess in a substrate before a metal layer is electro-plated to fill the recess.
摘要翻译：公开了一种金属（例如铜）互连和相关的制造方法，其中通过在金属层被电镀以填充凹部之前，通过电镀电镀在形成于基板的凹部上的种子层来形成金属互连。

3. 发明申请

US20080124917A1 Method of manufacturing a semiconductor device having air gaps 审中-公开
标题翻译：制造具有气隙的半导体器件的方法
公开(公告)号：US20080124917A1
公开(公告)日：2008-05-29
申请号：US11986236
申请日：2007-11-20
申请人： Jun-Hwan Oh , Ju-Hyuck Chung , Il-Goo Kim , Hyoung-Sik Kim
发明人： Jun-Hwan Oh , Ju-Hyuck Chung , Il-Goo Kim , Hyoung-Sik Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76885
摘要： In a method of manufacturing a semiconductor device having air gaps, an organic sacrificial layer pattern is formed on a semiconductor substrate, wherein the organic sacrificial layer pattern includes openings. Metal structures are formed in the openings. The organic sacrificial layer pattern is removed by a plasma ashing treatment using a source gas including oxygen (O2) and carbon monoxide (CO). An insulating interlayer is formed to have air gaps between the metal structures. Resistance-capacitance (RC) delay and crosstalk between the metal structures may be efficiently suppressed.
摘要翻译：在制造具有气隙的半导体器件的方法中，在半导体衬底上形成有机牺牲层图案，其中有机牺牲层图案包括开口。金属结构形成在开口中。通过使用包括氧（O 2/2）和一氧化碳（CO））的源气体的等离子体灰化处理来去除有机牺牲层图案。形成绝缘中间层以在金属结构之间具有气隙。可以有效地抑制金属结构之间的电阻 - 电容（RC）延迟和串扰。

4. 发明申请

US20050090094A1 Method of forming a metal pattern for a semiconductor device 审中-公开
标题翻译：形成半导体器件的金属图案的方法
公开(公告)号：US20050090094A1
公开(公告)日：2005-04-28
申请号：US10970297
申请日：2004-10-21
申请人： Jun-Hwan Oh , Hong-Seong Son
发明人： Jun-Hwan Oh , Hong-Seong Son
IPC分类号： H01L21/28 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/8238 , H01L21/311 , H01L21/4763
CPC分类号： H01L21/7684 , H01L21/32115 , H01L21/3212 , H01L21/32134
摘要： A method of forming a conductive pattern includes preparing a semiconductor substrate having a conductive pattern, forming an interlayer dielectric pattern having an opening exposing the conductive pattern on the semiconductor substrate, forming a metal layer on the interlayer dielectric pattern to fill the opening, wet etching the metal layer, and polishing the metal layer to form a metal pattern filling the opening. The wet etching is done such that a top surface of the interlayer dielectric pattern is not exposed.
摘要翻译：形成导电图案的方法包括制备具有导电图案的半导体衬底，形成具有露出半导体衬底上的导电图案的开口的层间电介质图案，在层间电介质图案上形成金属层以填充开口，湿蚀刻金属层，并且抛光金属层以形成填充开口的金属图案。进行湿蚀刻，使得层间电介质图案的顶表面不被暴露。

5. 发明申请

US20070018329A1 Interconnection having dual-level or multi-level capping layer and method of forming the same 审中-公开
标题翻译：具有双层或多层盖层的互连及其形成方法
公开(公告)号：US20070018329A1
公开(公告)日：2007-01-25
申请号：US11488058
申请日：2006-07-18
申请人： Jun-Hwan Oh , Dong-Cho Maeng
发明人： Jun-Hwan Oh , Dong-Cho Maeng
IPC分类号： H01L23/48
CPC分类号： H01L21/76849 , H01L21/76832 , H01L21/76834 , H01L21/76867 , H01L21/76886 , H01L2924/0002 , H01L2924/00
摘要： An interconnection having a dual-level and multi-level capping layer and a method of forming the same. The interconnection may include an interlayer dielectric layer with a groove formed therein, a metal layer formed within the groove, a metal compound layer on the metal layer, a first barrier layer on the interlayer dielectric layer, and a second barrier layer on both the metal compound layer and the first barrier layer.
摘要翻译：具有双层和多层盖层的互连及其形成方法。互连可以包括其中形成有沟槽的层间电介质层，在沟槽内形成的金属层，金属层上的金属化合物层，层间介质层上的第一阻挡层，以及在金属上的第二阻挡层复合层和第一阻挡层。

6. 发明申请

US20060097220A1 Etching solution and method for removing low-k dielectric layer 审中-公开
标题翻译：蚀刻溶液和去除低k介电层的方法
公开(公告)号：US20060097220A1
公开(公告)日：2006-05-11
申请号：US11270339
申请日：2005-11-09
申请人： Mi-Young Kim , Hyo-San Lee , Uk-Sun Hong , Jun-Hwan Oh , Sang-Min Lee
发明人： Mi-Young Kim , Hyo-San Lee , Uk-Sun Hong , Jun-Hwan Oh , Sang-Min Lee
IPC分类号： C09K13/00 , B44C1/22 , H01L21/461
CPC分类号： C09K13/08 , H01L21/31111
摘要： Etching solutions are disclosed for etching low-k dielectric layers on substrates, said solutions including effective proportions of an oxidant for oxidizing a low-k dielectric layer and effective proportions of an oxide etchant for removing oxides. It is possible to easily remove a low-k dielectric layer using such etching solutions by a single-stage treatment process.
摘要翻译：公开了蚀刻溶液以蚀刻在衬底上的低k电介质层，所述溶液包括用于氧化低k电介质层的氧化剂的有效比例和用于除去氧化物的氧化物蚀刻剂的有效比例。可以通过单级处理方法使用这种蚀刻溶液容易地去除低k电介质层。

7. 发明申请

US20050153566A1 Method of fabricating microelectronic device using super critical fluid 有权
标题翻译：使用超临界流体制造微电子器件的方法
公开(公告)号：US20050153566A1
公开(公告)日：2005-07-14
申请号：US11033712
申请日：2005-01-12
申请人： Sang-Cheol Han , Jun-Hwan Oh
发明人： Sang-Cheol Han , Jun-Hwan Oh
IPC分类号： H01L21/3205 , H01L21/00 , H01L21/302 , H01L21/461 , H01L21/768 , H01L21/8242
CPC分类号： H01L21/76808 , H01L21/76802 , H01L21/76829 , H01L21/76835
摘要： Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.
摘要翻译：公开了制造具有改进的性能特征的微电子器件的方法，其特征在于使用超临界流体来执行材料去除步骤。在一个说明性实施例中，该方法包括制备衬底，形成覆盖衬底的至少一部分的HSQ层，然后使用超临界流体CO 2 2去除至少部分HSQ层。

8. 发明授权

US08036175B2 Handoff method between heterogeneous networks and system thereof 有权
标题翻译：异构网络与其系统之间的切换方法
公开(公告)号：US08036175B2
公开(公告)日：2011-10-11
申请号：US11970315
申请日：2008-01-07
申请人： Kyung-Joo Suh , Beom-Sik Bae , Dae-Gyun Kim , Jung-Soo Jung , Veronica Kondratieva , Yong Chang , Nae-Hyun Lim , Jung-Shin Park , Dae-Woo Lee , Jun-Hwan Oh
发明人： Kyung-Joo Suh , Beom-Sik Bae , Dae-Gyun Kim , Jung-Soo Jung , Veronica Kondratieva , Yong Chang , Nae-Hyun Lim , Jung-Shin Park , Dae-Woo Lee , Jun-Hwan Oh
IPC分类号： H04W4/00
CPC分类号： H04W36/0022 , H04W36/0033
摘要： A handoff method between a source network to which a terminal is connected in order of a Base Station (BS) and an Access Service Network (ASN), and a target network to which the terminal is connected in order of a Packet Data Service Node (PDSN), a Packet Control Function (PCF) and an Access Network (AN). The terminal sends a handoff request message with AN information of the target network to the ASN via the BS. The ASN forwards the handoff request message to the PCF via the PDSN using the AN information. Upon receipt of the handoff request message, the PCF sends a request for session information to the ASN via the PDSN. The PDSN sends a request for context information to the ASN. Upon receipt of the session information request and the context information request, the ASN transfers the context information to the PDSN and transfers the session information to the AN via the PDSN and the PCF.
摘要翻译：终端按照基站（BS）和接入服务网络（ASN）的顺序连接的源网络之间的切换方法和终端按照分组数据服务节点（顺序）连接的目标网络 PDSN），分组控制功能（PCF）和接入网络（AN）。终端通过BS向ASN发送具有目标网络的AN信息的切换请求消息。 ASN使用AN信息经由PDSN将切换请求消息转发到PCF。在接收到切换请求消息时，PCF通过PDSN向ASN发送会话信息请求。 PDSN向ASN发送上下文信息请求。在接收到会话信息请求和上下文信息请求之后，ASN将上下文信息传送到PDSN，并经由PDSN和PCF将会话信息传送给AN。

9. 发明授权

US07351635B2 Method of fabricating microelectronic device using super critical fluid 有权
标题翻译：使用超临界流体制造微电子器件的方法
公开(公告)号：US07351635B2
公开(公告)日：2008-04-01
申请号：US11033712
申请日：2005-01-12
申请人： Sang-Cheol Han , Jun-Hwan Oh
发明人： Sang-Cheol Han , Jun-Hwan Oh
IPC分类号： H01L21/8242
CPC分类号： H01L21/76808 , H01L21/76802 , H01L21/76829 , H01L21/76835
摘要： Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.
摘要翻译：公开了制造具有改进的性能特征的微电子器件的方法，其特征在于使用超临界流体来执行材料去除步骤。在一个说明性实施例中，该方法包括制备衬底，形成覆盖衬底的至少一部分的HSQ层，然后使用超临界流体CO 2 2去除至少部分HSQ层。

10. 发明授权

US09326269B2 Apparatus and method for synchronization between scanning interval and multicast interval in broadband wireless access system 有权
标题翻译：宽带无线接入系统中扫描间隔与组播间隔同步的装置和方法
公开(公告)号：US09326269B2
公开(公告)日：2016-04-26
申请号：US13301223
申请日：2011-11-21
申请人： Gyou-Hwan Kim , Han-Seok Kim , Mi-Ae Wi , Jun-Hwan Oh , Sung-Kwan Kim
发明人： Gyou-Hwan Kim , Han-Seok Kim , Mi-Ae Wi , Jun-Hwan Oh , Sung-Kwan Kim
IPC分类号： H04W72/00 , H04W4/06 , H04W56/00 , H04W76/00
CPC分类号： H04W72/005 , H04W4/06 , H04W56/0015 , H04W76/40
摘要： Scanning cycle synchronization of a multicast service in a broadband wireless access system is provided. Multicast group information of a multicast group to which a Mobile Station (MS) belongs is received at the MS from an application server. A scanning cycle pattern and a scan offset of a multicast service corresponding to the multicast group are determined. A scanning cycle of the multicast is set according to the scanning cycle pattern and the scan offset. Scanning and reception of multicast data are performed according to the scanning cycle.
摘要翻译：提供宽带无线接入系统中组播业务的扫描周期同步。在MS处从应用服务器接收到移动站（MS）所属的多播组的组播组信息。确定与多播组对应的多播服务的扫描周期模式和扫描偏移量。根据扫描周期模式和扫描偏移设置多播的扫描周期。根据扫描周期进行组播数据的扫描和接收。

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