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    • 4. 发明授权
    • Level shifter and a display device having the same
    • 电平移位器和具有该移位器的显示装置
    • US07362158B2
    • 2008-04-22
    • US11429297
    • 2006-05-05
    • Tae-Hyeong ParkKook-Chul MoonIl-Gon KimChul-Ho KimKyung-Hoon KimHo-Suk Maeng
    • Tae-Hyeong ParkKook-Chul MoonIl-Gon KimChul-Ho KimKyung-Hoon KimHo-Suk Maeng
    • H03L5/00
    • H03K3/356165
    • A level shifter and a display device having the same are provided. In a level shifter, a first transistor includes a gate electrode receiving a first driving voltage, and a source electrode receiving an input signal through an input terminal. A second transistor includes a drain electrode receiving the first driving voltage, and a source electrode electrically connected to a drain electrode of the first transistor through a first node. A third transistor includes a source electrode receiving a second driving voltage, a drain electrode electrically connected to a gate electrode of the second transistor through a second node, and a gate electrode receiving the input signal. A fourth transistor includes a drain electrode receiving the first driving voltage, a gate electrode electrically connected to the drain electrode of the first transistor through the first node, and a source electrode electrically connected to the drain electrode of the third transistor through the second node. An inverter inverts a signal outputted from the second node to apply the inverted signal to an output terminal.
    • 提供了一种电平移位器和具有该电平移位器的显示装置。 在电平移位器中,第一晶体管包括接收第一驱动电压的栅极电极和通过输入端子接收输入信号的源电极。 第二晶体管包括接收第一驱动电压的漏电极和通过第一节点电连接到第一晶体管的漏电极的源电极。 第三晶体管包括接收第二驱动电压的源电极,通过第二节点电连接到第二晶体管的栅电极的漏电极和接收输入信号的栅电极。 第四晶体管包括接收第一驱动电压的漏电极,通过第一节点电连接到第一晶体管的漏电极的栅电极和通过第二节点电连接到第三晶体管的漏电极的源电极。 反相器将从第二节点输出的信号反相,将反相信号施加到输出端。
    • 5. 发明申请
    • Level shifter and a display device having the same
    • 电平移位器和具有该移位器的显示装置
    • US20070035339A1
    • 2007-02-15
    • US11429297
    • 2006-05-05
    • Tae-Hyeong ParkKook-Chul MoonIl-Gon KimChul-Ho KimKyung-Hoon KimHo-Suk Maeng
    • Tae-Hyeong ParkKook-Chul MoonIl-Gon KimChul-Ho KimKyung-Hoon KimHo-Suk Maeng
    • H03L5/00
    • H03K3/356165
    • A level shifter and a display device having the same are provided. In a level shifter, a first transistor includes a gate electrode receiving a first driving voltage, and a source electrode receiving an input signal through an input terminal. A second transistor includes a drain electrode receiving the first driving voltage, and a source electrode electrically connected to a drain electrode of the first transistor through a first node. A third transistor includes a source electrode receiving a second driving voltage, a drain electrode electrically connected to a gate electrode of the second transistor through a second node, and a gate electrode receiving the input signal. A fourth transistor includes a drain electrode receiving the first driving voltage, a gate electrode electrically connected to the drain electrode of the first transistor through the first node, and a source electrode electrically connected to the drain electrode of the third transistor through the second node. An inverter inverts a signal outputted from the second node to apply the inverted signal to an output terminal.
    • 提供了一种电平移位器和具有该电平移位器的显示装置。 在电平移位器中,第一晶体管包括接收第一驱动电压的栅极电极和通过输入端子接收输入信号的源电极。 第二晶体管包括接收第一驱动电压的漏电极和通过第一节点电连接到第一晶体管的漏电极的源电极。 第三晶体管包括接收第二驱动电压的源电极,通过第二节点电连接到第二晶体管的栅电极的漏电极和接收输入信号的栅电极。 第四晶体管包括接收第一驱动电压的漏电极,通过第一节点电连接到第一晶体管的漏电极的栅电极和通过第二节点电连接到第三晶体管的漏电极的源电极。 反相器将从第二节点输出的信号反相,将反相信号施加到输出端。
    • 9. 发明授权
    • Thin film transistor array panel with enhanced storage capacitors
    • 具有增强型存储电容器的薄膜晶体管阵列面板
    • US07612377B2
    • 2009-11-03
    • US11337151
    • 2006-01-19
    • Kook-Chul MoonSoong-Yong JooIl-Gon KimTae-Hyeong Park
    • Kook-Chul MoonSoong-Yong JooIl-Gon KimTae-Hyeong Park
    • H01L27/14H01L29/04H01L29/15H01L31/036
    • H01L27/124G02F1/136213G02F1/136227G02F1/136286H01L27/1255
    • A thin film transistor array panel is provided. The array panel includes a storage capacitance that is substantially uniform, and allows for a relatively large capacitance in a relatively small area. In some embodiments, the panel includes: a substrate; a plurality of semiconductor regions on the substrate, including a plurality of source and drain regions doped with a first impurity type and a dummy region doped with a second impurity type, and an intrinsic region having storage and channel regions; a gate insulating layer covering at least a portion of the semiconductor regions; a gate line including a gate electrode at least partially overlapping the channel region and formed on the gate insulating layer; a storage line including a storage electrode at least partially overlapping the storage region and formed on the gate insulating layer; a data line including a source electrode connected to the source region and formed on the gate insulating layer; a drain electrode connected to the drain region and the dummy region and formed on the gate insulating layer; and a pixel electrode connected to the drain electrode.
    • 提供薄膜晶体管阵列面板。 阵列面板包括基本均匀的存储电容,并且允许在相对小的区域中具有相对大的电容。 在一些实施例中,面板包括:基底; 在衬底上的多个半导体区域,包括掺杂有第一杂质类型的多个源区和漏区以及掺杂有第二杂质的虚拟区,以及具有存储和沟道区的本征区; 覆盖所述半导体区域的至少一部分的栅极绝缘层; 栅极线,包括至少部分地与沟道区重叠并形成在栅极绝缘层上的栅电极; 存储线,包括至少部分地与所述存储区域重叠并形成在所述栅极绝缘层上的存储电极; 数据线,包括连接到所述源极区并形成在所述栅极绝缘层上的源电极; 连接到漏极区域和虚设区域并形成在栅极绝缘层上的漏电极; 以及连接到漏电极的像素电极。