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1. 发明授权

US07107847B2 Semiconductor acceleration sensor and method of manufacturing the same 失效
标题翻译：半导体加速度传感器及其制造方法
公开(公告)号：US07107847B2
公开(公告)日：2006-09-19
申请号：US10867701
申请日：2004-06-16
申请人： Hitoshi Yoshida , Kazushi Kataoka , Hisakazu Miyajima , Sumio Akai , Daisuke Wakabayashi , Koji Goto , Makoto Morii
发明人： Hitoshi Yoshida , Kazushi Kataoka , Hisakazu Miyajima , Sumio Akai , Daisuke Wakabayashi , Koji Goto , Makoto Morii
IPC分类号： G01P15/12
CPC分类号： G01P15/18 , G01P15/0802 , G01P15/123 , G01P2015/0842
摘要： A semiconductor acceleration sensor comprises: a frame having an opening inside thereof; flexible beams extending from the frame to the inside of the opening of the frame; a weight suspended from and supported by the beams so that the weight can freely move; piezoresistors to be mounted on the beams and to vary the resistance values in response to accelerations which work on the piezoresistors. The frame comprises damper plate portions, each of which covers a part of the opening spanning from a corner portion of two neighboring sides of the frame on the side of the opening to the inside of the opening, and each of which serves serve as a stopper to limit movement of the weight. The weight has corner portions which face the corner portions, respectively, and each of which is chamfered to have a shape of arc or a polygonal line consisting of at least three sides as seen in plan view. Thereby, the breaking strength of each stopper is increased, and hence a semiconductor acceleration sensor having superior shock resistance can be obtained.
摘要翻译：半导体加速度传感器包括：在其内部具有开口的框架; 从框架延伸到框架的开口的内部的柔性梁; 由梁悬挂和支撑的重物，使重物能自由移动; 压敏电阻器被安装在光束上并且响应于在压敏电阻器上工作的加速度来改变电阻值。框架包括阻尼板部分，每个阻挡板部分覆盖从开口至开口内侧的框架的两个相邻侧的角部的开口的一部分，每个开口用作止动件限制重量的移动。该重量具有分别面对拐角部分的角部，并且如平面图所示，每个角部被倒角成具有由至少三个侧面组成的弧形或多边形线。因此，每个制动器的断裂强度增加，因此可以获得具有优异抗冲击性的半导体加速度传感器。

2. 发明申请

US20090236678A1 SENSOR DEVICE AND PRODUCTION METHOD THEREFOR 失效
标题翻译：传感器及其生产方法
公开(公告)号：US20090236678A1
公开(公告)日：2009-09-24
申请号：US12094772
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L23/02 , H01L21/50
CPC分类号： G01P15/0802 , B81B7/0051 , B81B7/0064 , B81B2201/025 , B81C2203/038 , G01C19/5719 , G01P1/023 , G01P15/125 , H01L2924/0002 , H01L2924/00
摘要： A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.
摘要翻译：提供了传感器特性变化小，电噪声提高的传感器装置。该传感器装置具有传感器单元，该传感器单元设置有具有开口的框架，保持在开口中的可移动部分，以相对于框架可移动;以及检测部分，用于根据可移动的位移位移输出电信号部分，以及由半导体材料制成的封装衬底，并结合到传感器单元的表面。封装基板在面向传感器单元的表面上具有电绝缘膜。通过在室温下在电绝缘膜的活化表面和传感器单元的活化表面之间形成直接接合，封装衬底结合到传感器单元。

3. 发明申请

US20090267165A1 WAFER LEVEL PACKAGE STRUCTURE, AND SENSOR DEVICE OBTAINED FROM THE SAME PACKAGE STRUCTURE 失效
标题翻译： WAVER LEVEL PACKAGE结构和相同包装结构获得的传感器装置
公开(公告)号：US20090267165A1
公开(公告)日：2009-10-29
申请号：US12094674
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L29/84
CPC分类号： G01P1/023 , B81B2201/0235 , B81B2201/0242 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/038 , G01C19/56 , G01P15/0802 , G01P15/123 , G01P15/18 , G01P2015/0842
摘要： A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.
摘要翻译：提供具有诸如加速度传感器和陀螺传感器的多个紧凑型传感器的晶片级封装结构。该封装结构由具有多个传感器单元的半导体晶片和结合到半导体晶片的两个表面的一对封装晶片构成。每个传感器单元具有一个具有开口的框架，一个保持在开口中的可移动部分可相对于框架移动;以及检测部分，用于根据可移动部分的位置偏移输出电信号。由于通过在框架上形成的表面激活区域和形成在封装晶片上的表面激活区域之间没有扩散的固相直接接合将半导体晶片结合到每个封装晶片，因此可以防止这种变化传感器特性由于接合界面处的残余应力而发生。

4. 发明授权

US08080869B2 Wafer level package structure and production method therefor 有权
标题翻译：晶圆级封装结构及其生产方法
公开(公告)号：US08080869B2
公开(公告)日：2011-12-20
申请号：US12094600
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L23/12
CPC分类号： G01P15/0802 , B81B7/0048 , B81B7/0051 , B81B2201/0235 , B81B2201/0242 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/038 , G01P1/023 , G01P15/123 , G01P15/125 , G01P15/18 , G01P2015/0842 , H01L21/50 , H01L23/10 , H01L2224/83895 , H01L2224/83896 , H01L2924/0002 , H01L2924/01079 , H01L2924/00
摘要： A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.
摘要翻译：提供了形成传感器特性变化小的多个紧凑型传感器装置的晶片级封装结构及其制造方法。该封装结构具有具有多个传感器单元的半导体晶片和与半导体晶片接合的封装晶片。半导体晶片具有相对于每个传感器单元形成的第一金属层。封装晶片在面向第一金属层的位置处具有接合金属层。由于通过第一金属层的活化表面和接合金属层之间的直接接合在室温下形成半导体晶片和封装晶片之间的结合部分，因此可以防止由于残余应力而导致的传感器特性的变化在接合部分。

5. 发明授权

US08067769B2 Wafer level package structure, and sensor device obtained from the same package structure 失效
标题翻译：晶圆级封装结构，以及从相同封装结构获得的传感器器件
公开(公告)号：US08067769B2
公开(公告)日：2011-11-29
申请号：US12094674
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L21/66
CPC分类号： G01P1/023 , B81B2201/0235 , B81B2201/0242 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/038 , G01C19/56 , G01P15/0802 , G01P15/123 , G01P15/18 , G01P2015/0842
摘要： A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.
摘要翻译：提供具有诸如加速度传感器和陀螺传感器的多个紧凑型传感器的晶片级封装结构。该封装结构由具有多个传感器单元的半导体晶片和结合到半导体晶片的两个表面的一对封装晶片构成。每个传感器单元具有一个具有开口的框架，一个保持在开口中的可移动部分可相对于框架移动;以及检测部分，用于根据可移动部分的位置偏移输出电信号。由于通过在框架上形成的表面激活区域和形成在封装晶片上的表面激活区域之间没有扩散的固相直接接合将半导体晶片结合到每个封装晶片，因此可以防止这种变化传感器特性由于接合界面处的残余应力而发生。

6. 发明授权

US08026594B2 Sensor device and production method therefor 失效
标题翻译：传感器装置及其制作方法
公开(公告)号：US08026594B2
公开(公告)日：2011-09-27
申请号：US12094772
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L23/12
CPC分类号： G01P15/0802 , B81B7/0051 , B81B7/0064 , B81B2201/025 , B81C2203/038 , G01C19/5719 , G01P1/023 , G01P15/125 , H01L2924/0002 , H01L2924/00
摘要： A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.
摘要翻译：提供了传感器特性变化小，电噪声提高的传感器装置。该传感器装置具有传感器单元，该传感器单元设置有具有开口的框架，保持在开口中的可移动部分，以相对于框架可移动;以及检测部分，用于根据可移动的位移位移输出电信号部分，以及由半导体材料制成的封装衬底，并结合到传感器单元的表面。封装基板在面向传感器单元的表面上具有电绝缘膜。通过在室温下在电绝缘膜的活化表面和传感器单元的活化表面之间形成直接接合，封装衬底结合到传感器单元。

7. 发明申请

US20090159997A1 WAFER LEVEL PACKAGE STRUCTURE AND PRODUCTION METHOD THEREFOR 有权
标题翻译： WAFER LEVEL PACKAGE结构及其生产方法
公开(公告)号：US20090159997A1
公开(公告)日：2009-06-25
申请号：US12094600
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： G01P15/0802 , B81B7/0048 , B81B7/0051 , B81B2201/0235 , B81B2201/0242 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/038 , G01P1/023 , G01P15/123 , G01P15/125 , G01P15/18 , G01P2015/0842 , H01L21/50 , H01L23/10 , H01L2224/83895 , H01L2224/83896 , H01L2924/0002 , H01L2924/01079 , H01L2924/00
摘要： A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.
摘要翻译：提供了形成传感器特性变化小的多个紧凑型传感器装置的晶片级封装结构及其制造方法。该封装结构具有具有多个传感器单元的半导体晶片和与半导体晶片接合的封装晶片。半导体晶片具有相对于每个传感器单元形成的第一金属层。封装晶片在面向第一金属层的位置处具有接合金属层。由于通过第一金属层的活化表面和接合金属层之间的直接接合在室温下形成半导体晶片和封装晶片之间的结合部分，因此可以防止由于残余应力而导致的传感器特性的变化在接合部分。

8. 发明授权

US07674638B2 Sensor device and production method therefor 失效
标题翻译：传感器装置及其制作方法
公开(公告)号：US07674638B2
公开(公告)日：2010-03-09
申请号：US12094771
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L21/66 , H01L23/58 , G01R31/26
CPC分类号： G01P15/0802 , B81B2201/0235 , B81B2201/0242 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/038 , B81C2203/0735 , G01P1/023 , G01P15/123 , G01P15/18 , G01P2015/0842
摘要： A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.
摘要翻译：提供了具有稳定的传感器特性的紧凑的传感器装置和制造方法。传感器装置形成有传感器基板和粘合到传感器基板的两个表面上的一对封装基板。传感器基板具有开口的框架，保持在开口中的可移动部分可相对于框架移动;以及检测部分，用于根据可移动部分的位置偏移输出电信号。通过使用原子束，离子束或惰性气体的等离子体，在传感器基板的框架和封装基板上形成表面激活区域。通过在室温下在传感器基板的表面激活区域和封装基板之间形成直接接合，可以避免由于接合部分处的残余应力引起的不便。

9. 发明申请

US20090152656A1 SENSOR DEVICE AND PRODUCTION METHOD THEREFOR 失效
标题翻译：传感器及其生产方法
公开(公告)号：US20090152656A1
公开(公告)日：2009-06-18
申请号：US12094771
申请日：2006-11-24
申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
发明人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： G01P15/0802 , B81B2201/0235 , B81B2201/0242 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/038 , B81C2203/0735 , G01P1/023 , G01P15/123 , G01P15/18 , G01P2015/0842
摘要： A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.
摘要翻译：提供了具有稳定的传感器特性的紧凑的传感器装置和制造方法。传感器装置形成有传感器基板和粘合到传感器基板的两个表面上的一对封装基板。传感器基板具有开口的框架，保持在开口中的可移动部分可相对于框架移动;以及检测部分，用于根据可移动部分的位置偏移输出电信号。通过使用原子束，离子束或惰性气体的等离子体，在传感器基板的框架和封装基板上形成表面激活区域。通过在室温下在传感器基板的表面激活区域和封装基板之间形成直接接合，可以避免由于接合部分处的残余应力引起的不便。

10. 发明授权

US5177029A Method for manufacturing static induction type semiconductor device enhancement mode power 失效
标题翻译：制造静电感应型半导体器件增强模式功率的方法
公开(公告)号：US5177029A
公开(公告)日：1993-01-05
申请号：US767574
申请日：1991-09-30
申请人： Masahiko Suzumura , Kazushi Kataoka , Takuya Komoda
发明人： Masahiko Suzumura , Kazushi Kataoka , Takuya Komoda
IPC分类号： H01L21/335 , H01L29/739
CPC分类号： H01L29/66416 , H01L29/7392
摘要： A method for manufacturing a static induction type semiconductor device is to form gate zones on a surface side of a semiconductor substrate, to cover the surface including the gate zones with an oxide film, to form through the oxide film apertures for providing cathode zones in the substrate, the apertures respectively overlapping partly each gate zone, and to form the cathode zones with thermal diffusion of an impurity carried out through the apertures, the cathode zones thus partly overlapping the gate zones. Concentration of the impurity as well as the depth of the diffusion at thus made impurity diffusion zones can be thereby stabilized, and eventually electric characteristics of enhancement type, static induction type semiconductor device can be sufficiently made stable.
摘要翻译：静电感应型半导体器件的制造方法是在半导体衬底的表面侧上形成栅极区域，用氧化膜覆盖包括栅极区域的表面，以形成氧化膜孔，以在阴极区域中形成阴极区域衬底，各个孔分别部分地叠置在每个栅极区上，并且通过穿过孔的杂质的热扩散形成阴极区，阴极区因此部分地与栅极区重叠。由此可以使由此制造的杂质扩散区域的杂质浓度以及扩散深度稳定，并且最终能够使增强型静电感应型半导体器件的电气特性充分稳定。

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