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    • 7. 发明授权
    • Diamond film and method for producing the same
    • 金刚石薄膜及其制造方法
    • US07070650B2
    • 2006-07-04
    • US10421562
    • 2003-04-23
    • Hitoshi NoguchiYoshihiro Kubota
    • Hitoshi NoguchiYoshihiro Kubota
    • C30B23/00
    • C23C16/274C23C16/278C30B25/105C30B29/04
    • There is disclosed a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3 gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. There can be provided a method enabling easy and uniform production of a diamond film showing a low electric resistivity value with good reproducibility and few problems concerning handling such as serious bad influence on human bodies and explosiveness during the doping process.
    • 公开了至少通过引入原料气体,通过气相反应在基材上制备金刚石膜的方法,其中B(OCH 3 3)3气体 作为待掺杂的硼源加入到原料气体中,并且通过利用混合原料气体的气相反应将金刚石膜沉积在基材上。 可以提供一种能够容易且均匀地制造金刚石膜的方法,其具有低的电阻率值,具有良好的再现性,并且在掺杂过程中对诸如对人体的严重不良影响和爆炸性的处理问题很少。