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1. 发明授权

US09062373B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09062373B2
公开(公告)日：2015-06-23
申请号：US13571546
申请日：2012-08-10
申请人： Hitoshi Kato , Shigehiro Ushikubo , Katsuyuki Hishiya
发明人： Hitoshi Kato , Shigehiro Ushikubo , Katsuyuki Hishiya
IPC分类号： C23C16/44 , C23C16/455 , H01L21/02
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45578 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area.
摘要翻译：一种成膜装置，包括在圆周方向上包括多个基板放置区域的转盘; 气体喷嘴，其设置成从所述基板放置区域的内边缘延伸到外边缘; 气体排出口，其设置在所述转台的外缘的外侧，并且相对于所述气体喷嘴排出所述转台，在所述转台的旋转方向的下游; 以及调节构件，其包括设置在所述气体喷嘴和所述气体排出口之间的壁部，用于至少在所述基板放置区域的内缘与外缘之间的部分处隔开所述气体喷嘴和所述排气口，同时具有空间当基板被放置在基板放置区域上时，从基板放置区域的内边缘延伸到外边缘。

2. 发明授权

US09453280B2 Film deposition apparatus, film deposition method and storage medium 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和存储介质
公开(公告)号：US09453280B2
公开(公告)日：2016-09-27
申请号：US13602587
申请日：2012-09-04
申请人： Hitoshi Kato , Katsuyuki Hishiya , Shigehiro Ushikubo
发明人： Hitoshi Kato , Katsuyuki Hishiya , Shigehiro Ushikubo
IPC分类号： H01L21/306 , C23C16/00 , C23C16/455 , H01J37/32 , C23C16/34
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/45551 , H01J37/321 , H01J37/32733
摘要： A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate.
摘要翻译：一种成膜装置，包括具有基板安装区域的转台，第一等离子体气体供给部，第二等离子体供给部，将第一等离子体产生气体转换为第一等离子体的第一等离子体气体发生部，以及第二等离子体产生部，在圆周方向上离开第一等离子体产生部分并将第二等离子体产生气体转换成第二等离子体。第一等离子体产生部件包括面向转盘的天线，以将第一等离子体产生气体转换成第一等离子体，以及天线与执行等离子体处理的区域之间的接地法拉第屏蔽，并且包括分别延伸的多个狭缝在垂直于天线的方向上并沿着天线延伸方向布置，以防止电场通向衬底并使磁场朝向衬底。

3. 发明授权

US09932674B2 Film deposition apparatus, film deposition method, and computer-readable recording medium 有权
公开(公告)号：US09932674B2
公开(公告)日：2018-04-03
申请号：US13467324
申请日：2012-05-09
申请人： Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
发明人： Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
IPC分类号： C23C16/00 , H01L21/306 , C23C16/54 , H01J37/32 , C23C16/455
CPC分类号： C23C16/54 , C23C16/4554 , H01J37/321
摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

4. 发明申请

US20110039026A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20110039026A1
公开(公告)日：2011-02-17
申请号：US12852545
申请日：2010-08-09
申请人： Hitoshi Kato , Hiroyuki Kikuchi , Shigehiro Ushikubo
发明人： Hitoshi Kato , Hiroyuki Kikuchi , Shigehiro Ushikubo
IPC分类号： C23C14/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/402 , C23C16/45536
摘要： A silicon oxide film is deposited by rotating a rotation table on which a wafer W is placed to allow BTBAS gas to be adsorbed on an upper surface of the wafer W and supply a O3 gas to the upper surface of the wafer W for allowing the BTBAS gas adsorbed on the upper surface of the wafer W to react. After depositing the silicon oxide film, a reforming process is performed every deposition cycle by supplying a plasma of Ar gas to the silicon oxide film on the wafer from an activated gas injector.
摘要翻译：通过旋转放置晶片W的旋转台来沉积氧化硅膜，以允许BTBAS气体吸附在晶片W的上表面上，并将O 3气体供应到晶片W的上表面，以允许BTBAS 吸附在晶片W的上表面上的气体反应。在沉积氧化硅膜之后，通过从活化气体注入器向晶片上的氧化硅膜提供Ar气体的等离子体，进行每个沉积循环的重整过程。

5. 发明授权

US09053909B2 Activated gas injector, film deposition apparatus, and film deposition method 有权
标题翻译：活性气体注入器，成膜装置和成膜方法
公开(公告)号：US09053909B2
公开(公告)日：2015-06-09
申请号：US12547648
申请日：2009-08-26
申请人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , H01J37/32 , C23C16/455 , C23C16/452 , C23C16/458 , C23C16/06 , C23C16/22 , H01J1/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

6. 发明授权

US08642487B2 Film deposition method and film deposition apparatus 有权
标题翻译：膜沉积法和成膜装置
公开(公告)号：US08642487B2
公开(公告)日：2014-02-04
申请号：US13471587
申请日：2012-05-15
申请人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/4554 , H01J37/321 , H01J37/32449 , H01J37/32715 , H01J37/32733 , H01J37/32779 , H01L21/02164 , H01L21/0228
摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.
摘要翻译：一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到反应产物。

7. 发明授权

US09297072B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09297072B2
公开(公告)日：2016-03-29
申请号：US12620750
申请日：2009-11-18
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/455 , H01L21/677 , H01L21/67 , C23C16/40
CPC分类号： C23C16/4551 , C23C16/402 , C23C16/45551 , C23C16/45578 , H01L21/6719 , H01L21/67703
摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.
摘要翻译：一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口，将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及排气单元构造成排出真空容器内的气氛。

8. 发明授权

US09103030B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09103030B2
公开(公告)日：2015-08-11
申请号：US12627144
申请日：2009-11-30
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/00 , C23C16/455 , C23C16/44 , C23C16/40
CPC分类号： C23C16/45551 , C23C16/402 , C23C16/4412 , C23C16/45578
摘要： In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.
摘要翻译：在成膜装置中，第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。提供加热器以通过辐射热来加热转台。外侧壁构件设置在真空室的底部，以在设置加热器的区域中围绕转台。空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。吹扫气体从转台的下侧流过转台的外侧，通过狭窄的空间沿径向流动。

9. 发明授权

US09093490B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09093490B2
公开(公告)日：2015-07-28
申请号：US12713317
申请日：2010-02-26
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/455 , C23C16/40 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/402 , C23C16/45551 , C23C16/45578 , C23C16/45589 , H01L21/68771
摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
摘要翻译：公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

10. 发明授权

US08951347B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08951347B2
公开(公告)日：2015-02-10
申请号：US13128908
申请日：2009-11-13
申请人： Hitoshi Kato , Yasushi Takeuchi
发明人： Hitoshi Kato , Yasushi Takeuchi
IPC分类号： C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/45519 , C23C16/45578 , C23C16/45591
摘要： A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
摘要翻译：一种成膜装置设置有气体喷嘴，其中沿着气体喷嘴的纵向方向形成喷射反应气体的喷射孔，以及流量调节构件，其从上游和下游方向中的任一个中的气体喷嘴突出转台的旋转方向。在这种构造中，从旋转方向的上游侧流向气体喷嘴的分离气体被限制在气体喷嘴与放置基板的转盘之间的流动，并且从转台向上流动的反应气体受到限制通过分离气体，从而阻止处理区域中的反应气体浓度降低。

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