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1. 发明申请

US20060286817A1 Cvd method for forming silicon nitride film 有权
标题翻译：用于形成氮化硅膜的Cvd方法
公开(公告)号：US20060286817A1
公开(公告)日：2006-12-21
申请号：US10558217
申请日：2004-05-21
申请人： Hitoshi Kato , Kohei Fukushima , Masato Yonezawa , Junya Hiraga
发明人： Hitoshi Kato , Kohei Fukushima , Masato Yonezawa , Junya Hiraga
IPC分类号： H01L21/31
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/45523 , H01L21/0217 , H01L21/02211 , H01L21/3185
摘要： A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.
摘要翻译：用于形成氮化硅膜的CVD方法包括排出容纳目标衬底（W）的处理室（8），并将硅烷族气体（HCD）和氨气（NH 3/3）供应到从而通过CVD在靶基板上形成氮化硅膜。所述在目标衬底上形成氮化硅膜交替地包括进入硅烷族气体（HCD）进入处理室（8）的第一时段和停止供应硅烷族气体的第二时段。

2. 发明授权

US07462376B2 CVD method for forming silicon nitride film 有权
标题翻译：用于形成氮化硅膜的CVD方法
公开(公告)号：US07462376B2
公开(公告)日：2008-12-09
申请号：US10558217
申请日：2004-05-21
申请人： Hitoshi Kato , Kohei Fukushima , Masato Yonezawa , Junya Hiraka
发明人： Hitoshi Kato , Kohei Fukushima , Masato Yonezawa , Junya Hiraka
IPC分类号： C23C16/34
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/45523 , H01L21/0217 , H01L21/02211 , H01L21/3185
摘要： A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.
摘要翻译：用于形成氮化硅膜的CVD方法包括排出容纳目标衬底（W）的处理室（8），并将硅烷族气体（HCD）和氨气（NH 3）供应到处理室中，从而形成硅通过CVD在靶基板上形成氮化物膜。所述在目标衬底上形成氮化硅膜交替地包括进入硅烷族气体（HCD）进入处理室（8）的第一时段和停止供应硅烷族气体的第二时段。

3. 发明授权

US07156923B2 Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method 有权
标题翻译：氮化硅膜形成方法，氮化硅膜形成系统和氮化硅膜形成系统预清洗方法
公开(公告)号：US07156923B2
公开(公告)日：2007-01-02
申请号：US10986282
申请日：2004-11-12
申请人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
发明人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
IPC分类号： C23C16/00 , C23C16/34 , C23C16/52 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/4405 , C23C16/4412 , H01L21/0217 , H01L21/3185 , Y10S438/905
摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
摘要翻译：热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。反应容器2在500-900℃范围内的温度下被加热，排气管（16）在分解和清洁排气管16之前被加热到100℃。氨通过工艺气体供给管（13）供给到反应容器（2）中，氨从反应容器（2）排出到排气管（16）中。

4. 发明授权

US06844273B2 Precleaning method of precleaning a silicon nitride film forming system 有权
标题翻译：预氮化氮化硅膜形成系统的预清洗方法
公开(公告)号：US06844273B2
公开(公告)日：2005-01-18
申请号：US10066627
申请日：2002-02-06
申请人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
发明人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
IPC分类号： C23C16/34 , C23C16/44 , H01L21/318 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/4405 , C23C16/4412 , H01L21/0217 , H01L21/3185 , Y10S438/905
摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
摘要翻译：热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。将反应容器2在500-900℃的温度范围内加热，并且排气管（16）在100℃下被加热，然后拆卸和清洁排气管16.氨通过工艺气体供应管（13）进入反应容器（2），氨从反应容器（2）排出到排气管（16）中。

5. 发明申请

US20050081789A1 Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method 有权
标题翻译：氮化硅膜形成方法，氮化硅膜形成系统和氮化硅膜形成系统预清洗方法
公开(公告)号：US20050081789A1
公开(公告)日：2005-04-21
申请号：US10986282
申请日：2004-11-12
申请人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
发明人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
IPC分类号： C23C16/34 , C23C16/44 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/4405 , C23C16/4412 , H01L21/0217 , H01L21/3185 , Y10S438/905
摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
摘要翻译：热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。将反应容器2在500-900℃的温度范围内加热，并且排气管（16）在100℃下被加热，然后拆卸和清洁排气管16.氨通过工艺气体供应管（13）进入反应容器（2），氨从反应容器（2）排出到排气管（16）中。

6. 发明授权

US09297072B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09297072B2
公开(公告)日：2016-03-29
申请号：US12620750
申请日：2009-11-18
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/455 , H01L21/677 , H01L21/67 , C23C16/40
CPC分类号： C23C16/4551 , C23C16/402 , C23C16/45551 , C23C16/45578 , H01L21/6719 , H01L21/67703
摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.
摘要翻译：一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口，将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及排气单元构造成排出真空容器内的气氛。

7. 发明授权

US09103030B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09103030B2
公开(公告)日：2015-08-11
申请号：US12627144
申请日：2009-11-30
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/00 , C23C16/455 , C23C16/44 , C23C16/40
CPC分类号： C23C16/45551 , C23C16/402 , C23C16/4412 , C23C16/45578
摘要： In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.
摘要翻译：在成膜装置中，第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。提供加热器以通过辐射热来加热转台。外侧壁构件设置在真空室的底部，以在设置加热器的区域中围绕转台。空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。吹扫气体从转台的下侧流过转台的外侧，通过狭窄的空间沿径向流动。

8. 发明授权

US09093490B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09093490B2
公开(公告)日：2015-07-28
申请号：US12713317
申请日：2010-02-26
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/455 , C23C16/40 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/402 , C23C16/45551 , C23C16/45578 , C23C16/45589 , H01L21/68771
摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
摘要翻译：公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

9. 发明授权

US08951347B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08951347B2
公开(公告)日：2015-02-10
申请号：US13128908
申请日：2009-11-13
申请人： Hitoshi Kato , Yasushi Takeuchi
发明人： Hitoshi Kato , Yasushi Takeuchi
IPC分类号： C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/45519 , C23C16/45578 , C23C16/45591
摘要： A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
摘要翻译：一种成膜装置设置有气体喷嘴，其中沿着气体喷嘴的纵向方向形成喷射反应气体的喷射孔，以及流量调节构件，其从上游和下游方向中的任一个中的气体喷嘴突出转台的旋转方向。在这种构造中，从旋转方向的上游侧流向气体喷嘴的分离气体被限制在气体喷嘴与放置基板的转盘之间的流动，并且从转台向上流动的反应气体受到限制通过分离气体，从而阻止处理区域中的反应气体浓度降低。

10. 发明授权

US08808456B2 Film deposition apparatus and substrate process apparatus 有权
标题翻译：薄膜沉积装置和基板处理装置
公开(公告)号：US08808456B2
公开(公告)日：2014-08-19
申请号：US12539642
申请日：2009-08-12
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/455 , H01L21/677 , C23C16/40 , H01L21/67
CPC分类号： C23C16/401 , C23C16/45502 , C23C16/45508 , C23C16/45551 , H01L21/67161 , H01L21/67703
摘要： A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber.
摘要翻译：所公开的薄膜沉积装置具有在其上放置基板的转台的旋转方向上彼此远离配置的反应气体喷嘴之间的分离气体供给喷嘴，以及在分离气体的两侧设置有下部顶面的顶板部件供应喷嘴。在该成膜装置中，分离气体供给喷嘴和反应气体喷嘴沿着室的圆周方向可拆卸地配置，顶棚部件可移除地安装在室的顶板上。

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