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    • 10. 发明申请
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US20050056908A1
    • 2005-03-17
    • US10892459
    • 2004-07-15
    • Yoko Sato
    • Yoko Sato
    • H01L21/76H01L21/762H01L21/8234H01L21/8238H01L27/08H01L27/088H01L27/092H01L27/12H01L29/786H01L29/00
    • H01L21/76283H01L27/1203
    • A semiconductor device is provided comprising a supporting substrate, an insulating layer on the substrate, and a first semiconductor layer on the insulating layer. A first high breakdown-voltage transistor is formed in the first semiconductor layer, a second semiconductor layer is formed on the insulating layer and a second high breakdown-voltage transistor is formed in the second semiconductor layer. A first element isolation region reaching the insulating layer is provided between the first and second semiconductor layers. A third semiconductor layer is formed on the insulating layer, a first low breakdown-voltage transistor is formed in the third semiconductor layer, a second low breakdown-voltage transistor is formed in the third semiconductor layer, and a second element isolation region not reaching the insulating layer is formed in the third semiconductor layer between the first and second low breakdown-voltage transistors. The first element isolation region comprises a dual-trench insulating layer.
    • 提供了一种半导体器件,包括支撑衬底,衬底上的绝缘层和绝缘层上的第一半导体层。 在第一半导体层中形成第一高击穿电压晶体管,在绝缘层上形成第二半导体层,在第二半导体层中形成第二高击穿电压晶体管。 到达绝缘层的第一元件隔离区域设置在第一和第二半导体层之间。 在绝缘层上形成第三半导体层,在第三半导体层中形成第一低击穿电压晶体管,在第三半导体层中形成第二低击穿电压晶体管,在第二半导体层中形成第二低击穿电压晶体管, 绝缘层形成在第一和第二低击穿电压晶体管之间的第三半导体层中。 第一元件隔离区域包括双沟槽绝缘层。