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1. 发明申请

US20150093916A1 Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium 有权
标题翻译：基板处理装置，制造半导体器件的方法和非瞬时计算机可读记录介质
公开(公告)号：US20150093916A1
公开(公告)日：2015-04-02
申请号：US14498023
申请日：2014-09-26
申请人： Hitachi Kokusai Electric Inc.
发明人： Tetsuo YAMAMOTO , Kazuhiro MORIMITSU , Kazuyuki TOYODA , Kenji ONO , Tadashi TAKASAKI , Ikuo HIROSE , Takafumi SASAKI
IPC分类号： C23C16/455 , C23C16/44 , H01L21/02 , C23C16/52
CPC分类号： C23C16/455 , C23C16/4408 , C23C16/4412 , C23C16/45542 , C23C16/52 , H01J37/32357 , H01J37/3244 , H01J37/32834 , H01J37/32862 , H01L21/02164 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228
摘要： Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.
摘要翻译：即使在使用缓冲空间的单晶片型装置中，副产物在缓冲空间中也被抑制。制造半导体器件的方法包括（a）将衬底装载到处理室中; （b）经由喷淋头的缓冲室将含第一元素的气体供给到放置在处理室中的基板; （c）经由所述缓冲室向所述基板供给含第二元素的气体; 和（d）执行（b）和（c）之间的排气过程，其中（d）包括：排出缓冲室的气氛; 并在排出缓冲室的气氛之后排出处理室的气氛。

2. 发明申请

US20190085455A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190085455A1
公开(公告)日：2019-03-21
申请号：US15866120
申请日：2018-01-09
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Teruo YOSHINO , Naofumi OHASHI , Tadashi TAKASAKI , Shun MATSUI
IPC分类号： C23C16/48 , H01L21/67 , C23C16/458 , C23C16/46
摘要： A substrate processing apparatus includes a heat storage part on which a substrate is mounted, a tray including the heat storage part, a substrate transfer part including a rotary shaft and a rotating plate supported by the rotary shaft and being configured such that the tray can be mounted on the rotating plate, a plurality of bases arranged circumferentially around the rotary shaft; and a heater provided for each of the bases.

3. 发明申请

US20180158714A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180158714A1
公开(公告)日：2018-06-07
申请号：US15465903
申请日：2017-03-22
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Takashi YAHATA , Tadashi TAKASAKI
IPC分类号： H01L21/687 , H01L21/67 , C23C16/455 , C23C16/458
CPC分类号： C23C16/458 , C23C16/54 , H01L21/67167 , H01L21/6719 , H01L21/67201 , H01L21/67742 , H01L21/67766
摘要： A substrate processing apparatus and technique, capable of processing substrates regardless of the types of substrates, include a loadlock chamber accommodating a first support part and a second support part for supporting a wafer; a first transfer mechanism including first tweezers configured to transfer the substrate into or out of the loadlock chamber through a first side of the loadlock chamber; a second transfer mechanism including second tweezers configured to transfer the substrate into or out of the loadlock chamber through a second side of the loadlock chamber; and a reactor where the substrate is processed. The first support part includes first support mechanisms spaced apart by a first distance along a direction perpendicular to an entering direction of the first tweezers or the second tweezers, and the second support part includes second support mechanisms spaced apart by a second distance smaller than the first distance.

4. 发明申请

US20150221503A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20150221503A1
公开(公告)日：2015-08-06
申请号：US14566989
申请日：2014-12-11
申请人： Hitachi Kokusai Electric Inc.
发明人： Kazuyuki TOYODA , Tadashi TAKASAKI , Hiroshi ASHIHARA , Atsushi SANO , Naonori AKAE , Hidehiro YANAI
IPC分类号： H01L21/02
CPC分类号： H01L21/02263 , C23C16/4405 , C23C16/4412 , C23C16/45561 , C23C16/4557 , H01J37/3244 , H01J37/32449 , H01J37/32577
摘要： A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.
摘要翻译：公开了制造半导体器件的方法。该方法包括（a）将衬底装载到处理室中; （b）通过经由设置在所述处理室上方并包括缓冲室的淋浴喷头将处理气体供给所述处理室来处理所述基板; （c）从处理室卸载基板; （d）在执行步骤（c）之后清洗缓冲室和处理室，其中步骤（d）包括：（d-1）通过缓冲室内的清洁气体的等离子体产生清洗缓冲室等离子体产生单元，其包括等离子体产生区域切换单元; 和（d-2）通过等离子体产生区域切换单元将来自缓冲室中的清洁气体的等离子体产生切换到来自处理室中的清洁气体的等离子体产生来清洁处理室。

5. 发明申请

US20150093913A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20150093913A1
公开(公告)日：2015-04-02
申请号：US14495388
申请日：2014-09-24
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Kazuyuki TOYODA , Yukitomo HIROCHI , Tetsuo YAMAMOTO , Kazuhiro MORIMITSU , Tadashi TAKASAKI
IPC分类号： H01L21/02 , H01L21/67 , C23C16/455 , C23C16/511 , C23C16/52
CPC分类号： H01L21/67017 , C23C16/345 , C23C16/4408 , C23C16/45523 , C23C16/45542 , C23C16/45557 , H01J37/32091 , H01J37/32449 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.
摘要翻译：制造半导体器件的方法包括将前体气体供给到基板; 向等离子体产生区域供应反应气体; 向等离子体产生区域提供高频功率; 以及通过在所述反应气体供应之前将所述等离子体产生区域的压力调节到第一压力并且将所述等离子体产生区域的压力调节到低于所述第一压力的第二压力来产生所述反应气体的等离子体，同时所述反应气体和提供高频功率。

6. 发明申请

US20170283949A1 Substrate Processing Apparatus 审中-公开
公开(公告)号：US20170283949A1
公开(公告)日：2017-10-05
申请号：US15457686
申请日：2017-03-13
申请人： Hitachi Kokusai Electric Inc.
发明人： Takashi YAHATA , Satoshi TAKANO , Kazuyuki TOYODA , Naofumi OHASHI , Tadashi TAKASAKI
IPC分类号： C23C16/46 , C23C16/52
CPC分类号： C23C16/46 , C23C16/345 , C23C16/45544 , C23C16/45561 , C23C16/45565 , C23C16/52
摘要： Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.

7. 发明申请

US20150214044A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20150214044A1
公开(公告)日：2015-07-30
申请号：US14500338
申请日：2014-09-29
申请人： Hitachi Kokusai Electric Inc.
发明人： Hidehiro YANAI , Hiroshi ASHIHARA , Atsushi SANO , Tadashi TAKASAKI
IPC分类号： H01L21/02
CPC分类号： H01L21/02271 , C23C16/34 , C23C16/452 , C23C16/45519 , C23C16/45523 , C23C16/45536 , C23C16/45561 , C23C16/45587 , C23C16/45591 , C23C16/52 , H01L21/02104 , H01L21/02186 , H01L21/28556 , H01L21/28562 , H01L21/67017 , H01L21/76843
摘要： Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.
摘要翻译：在喷头的气体引导件上的空间中产生粘附材料被抑制。基板处理装置包括处理室; 包括分散单元的缓冲室; 安装在缓冲室的顶部的工艺气体供给孔; 安装在顶棚部分的惰性气体供给孔; 设置在分散单元和顶部之间的间隙中的气体引导件，气体导向器包括设置在处理气体供给孔侧的基端部，与惰性气体供给孔相比更靠近惰性气体供给孔设置的前端部处理气体供给孔和连接基端部和前端部的板部; 处理室排气单元; 和控制单元。

8. 发明申请

US20170092517A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170092517A1
公开(公告)日：2017-03-30
申请号：US14979898
申请日：2015-12-28
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Naofumi OHASHI , Toshiyuki KIKUCHI , Shun MATSUI , Tadashi TAKASAKI
IPC分类号： H01L21/67 , H01L21/687 , H01L21/677
CPC分类号： H01L21/67196 , H01L21/6719 , H01L21/67201 , H01L21/67276 , H01L21/67742 , H01L21/67745 , H01L21/67781 , H01L21/68707
摘要： The present invention provides a technique for improving the productivity of a processing apparatus including a plurality of process chambers. There is provided a technique including a method for manufacturing a semiconductor device including: (a) transferring a last remaining substrate stored in an xth storage unit of a plurality of storage units to an empty nth chamber in an mth processing unit of a plurality of processing units; and (b) transferring a first one of a plurality of substrates stored in an (x+1)th storage unit of the plurality of storage units to one of chambers in an (m+1)th processing unit of the plurality of processing units (where x, m and n are natural numbers).

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