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1. 发明申请

US20150214042A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20150214042A1
公开(公告)日：2015-07-30
申请号：US14681065
申请日：2015-04-07
申请人： Hitachi Kokusai Electric Inc.
发明人： Ryota SASAJIMA , Yoshiro HIROSE , Yosuke OTA , Naonori AKAE , Kojiro YOKOZAWA
IPC分类号： H01L21/02 , H01L21/321
CPC分类号： H01L21/0223 , C23C16/402 , C23C16/45546 , C23C16/54 , C23C16/56 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02238 , H01L21/02244 , H01L21/0228 , H01L21/02337 , H01L21/3141 , H01L21/31608 , H01L21/31645 , H01L21/32051 , H01L21/321
摘要： Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.
摘要翻译：提供一种制造半导体器件的方法。该方法包括：（a）通过交替地重复以下步骤：（a-1）在基板上形成具有预定厚度的氧化膜，该方法包括：（a-1）在基板上形成含有预定元素的层，容纳衬底并从处理容器排出源气体; 和（a-2）通过向处理容器供给含氧气体和含氢气体将含有预定元素的层改变为氧化物层，其中处理容器内部处于低压下的加热气氛比大气压; 并从处理容器排出含氧气体和含氢气体; 和（b）通过向处理容器供给含氧气体和含氢气体来改性在基板上形成的氧化膜，其中处理容器的内部处于压力低于大气压的加热气氛下并从处理容器排出含氧气体和含氢气体。

2. 发明申请

US20160024650A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20160024650A1
公开(公告)日：2016-01-28
申请号：US14804653
申请日：2015-07-21
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Kazuyuki TOYODA , Hiroshi ASHIHARA , Atsushi SANO , Naonori AKAE , Hidehiro YANAI
IPC分类号： C23C16/44 , C23C16/458 , C23C16/455 , C23C16/52
CPC分类号： C23C16/45523 , C23C16/345 , C23C16/4408 , C23C16/45519 , C23C16/45582 , C23C16/4585
摘要： A substrate processing apparatus includes: a reaction zone configured to accommodate a substrate; a substrate supporting member having a projecting part extending outward; a partition plate configured to partition off the reaction zone and a transferring zone, coming in contact with the projecting part of the substrate supporting member when the substrate is processed; a process gas supplying system configured to supply a process gas to the reaction zone; and a partitioning purge gas supplying system configured to supply a purge gas to a gap formed between the projecting part and the partition plate when supplying the process gas to the substrate.
摘要翻译：基板处理装置包括：被配置为容纳基板的反应区; 具有向外延伸的突出部的基板支撑部件; 配置成隔离反应区域的分隔板和当处理基板时与基板支撑构件的突出部分接触的转移区域; 工艺气体供给系统，被配置为向所述反应区域供给处理气体; 以及分配吹扫气体供给系统，其构造成当向所述基板供给处理气体时，向所述突出部和所述隔板之间的间隙供给净化气体。

3. 发明申请

US20150031216A1 CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开
标题翻译：清洗方法，制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20150031216A1
公开(公告)日：2015-01-29
申请号：US14341367
申请日：2014-07-25
申请人： HITACHI KOKUSAI ELECTRIC, INC.
发明人： Naonori AKAE , Kenji KAMEDA
IPC分类号： C23C16/44 , H01L21/02 , C23C16/52 , C23C16/40 , C23C16/34
CPC分类号： C23C16/4405 , C23C16/345 , C23C16/402 , C23C16/45529 , C23C16/45542 , C23C16/52
摘要： There is provided a method of cleaning an inside of a process chamber, which is formed by a reaction tube and a manifold configured to support the reaction tube and installed under a heater, after forming a stacked film of oxide and nitride films on a substrate in the process chamber by alternately performing forming the oxide film on the substrate and forming the nitride film thereon. The method includes supplying a hydrogen-free fluorine-based gas from a first nozzle, which is installed in the manifold to extend upward from the manifold to an inside of the reaction tube, to an inner wall of the reaction tube; and supplying a hydrogen fluoride gas from a second nozzle, which is installed in the manifold, to an inner wall of the manifold.
摘要翻译：提供了一种在基板上形成氧化物和氮化物膜的层叠膜之后，将由反应管和配置成支撑反应管并配置在加热器下方的歧管形成的处理室内部进行清洗的方法，该处理室通过交替地在衬底上形成氧化膜并在其上形成氮化物膜。该方法包括从安装在歧管中的第一喷嘴供应无氢氟基气体，以从歧管向上延伸到反应管的内部;将反应管的内壁提供无氢氟基气体; 以及将来自安装在所述歧管中的第二喷嘴的氟化氢气体供给到所述歧管的内壁。

4. 发明申请

US20140318451A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20140318451A1
公开(公告)日：2014-10-30
申请号：US14329355
申请日：2014-07-11
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Naonori AKAE , Yoshiro HIROSE , Yushin TAKASAWA , Yosuke OTA
IPC分类号： H01L21/02
CPC分类号： H01L21/02164 , C23C16/45512 , C23C16/45525 , C23C16/45546 , C23C16/45574 , C23C16/45578 , H01L21/02211 , H01L21/0223 , H01L21/02238 , H01L21/02263 , H01L21/0228 , H01L21/02337 , H01L21/02532 , H01L21/0262 , H01L21/31612
摘要： A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.
摘要翻译：一种基板处理装置，其能够通过在基板上形成层来形成氧化膜，所述基板通过经由所述第一喷嘴将原料气体供给到容纳所述基板的处理容器中，同时通过第二喷嘴供给含氧气体，含氢气体通过第一喷嘴进入处理容器，其内压低于大气压; 在所述处理容器内的非等离子体气氛中使所述含氧气体与所述含氢气体混合和反应以产生原子氧; 并且用原子氧氧化该层以将该层改变为氧化物层。

5. 发明申请

US20160298235A1 SUBSTRATE PROCESSING APPARATUS AND GUIDE PORTION 审中-公开
标题翻译：基板加工设备和导向部分
公开(公告)号：US20160298235A1
公开(公告)日：2016-10-13
申请号：US15191151
申请日：2016-06-23
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Masato TERASAKI , Naonori AKAE , Hideki HORITA
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , B08B3/00 , B08B3/02 , B08B3/04 , B08B5/00 , B08B5/02 , B08B7/00 , B08B9/00 , B08B9/02 , B08B9/023 , B08B9/027 , B08B9/04 , C23C16/45523 , C23C16/45525 , C23C16/45561 , H01J37/32862 , H01L21/02049 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate through a first nozzle in the manifold extending upward to an inside of the reaction tube, and supplying an oxidizing gas to the substrate through a second nozzle in the manifold extending upward to the inside of the reaction tube; and (b) cleaning an inside of the process chamber. The step (b) includes a first cleaning process of supplying a hydrogen fluoride gas into the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas onto an inner wall surface of the manifold through a third nozzle disposed in the manifold.
摘要翻译：清洁方法包括（a）在由反应管和支撑反应管的歧管形成的处理室中的基板上形成氧化膜之后，通过执行预定次数的循环来提供处理室，该循环包括供给通过歧管中的第一喷嘴将气体引导到基板，向上延伸到反应管的内部，并且通过歧管中的第二喷嘴向基板提供氧化气体，向上延伸到反应管的内部; 和（b）清洁处理室的内部。步骤（b）包括通过第二喷嘴将氟化氢气体供应到反应管中的第一清洗过程; 以及通过设置在歧管中的第三喷嘴将氟化氢气体供给到歧管的内壁表面上的第二清洗过程。

6. 发明申请

US20150221503A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20150221503A1
公开(公告)日：2015-08-06
申请号：US14566989
申请日：2014-12-11
申请人： Hitachi Kokusai Electric Inc.
发明人： Kazuyuki TOYODA , Tadashi TAKASAKI , Hiroshi ASHIHARA , Atsushi SANO , Naonori AKAE , Hidehiro YANAI
IPC分类号： H01L21/02
CPC分类号： H01L21/02263 , C23C16/4405 , C23C16/4412 , C23C16/45561 , C23C16/4557 , H01J37/3244 , H01J37/32449 , H01J37/32577
摘要： A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.
摘要翻译：公开了制造半导体器件的方法。该方法包括（a）将衬底装载到处理室中; （b）通过经由设置在所述处理室上方并包括缓冲室的淋浴喷头将处理气体供给所述处理室来处理所述基板; （c）从处理室卸载基板; （d）在执行步骤（c）之后清洗缓冲室和处理室，其中步骤（d）包括：（d-1）通过缓冲室内的清洁气体的等离子体产生清洗缓冲室等离子体产生单元，其包括等离子体产生区域切换单元; 和（d-2）通过等离子体产生区域切换单元将来自缓冲室中的清洁气体的等离子体产生切换到来自处理室中的清洁气体的等离子体产生来清洁处理室。

7. 发明申请

US20150194302A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20150194302A1
公开(公告)日：2015-07-09
申请号：US14661970
申请日：2015-03-18
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Naonori AKAE , Yoshiro HIROSE , Yushin TAKASAWA , Yosuke OTA
IPC分类号： H01L21/02
CPC分类号： H01L21/02164 , C23C16/45512 , C23C16/45525 , C23C16/45546 , C23C16/45574 , C23C16/45578 , H01L21/02211 , H01L21/0223 , H01L21/02238 , H01L21/02263 , H01L21/0228 , H01L21/02337 , H01L21/02532 , H01L21/0262 , H01L21/31612
摘要： A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.
摘要翻译：一种基板处理装置，其能够通过在基板上形成层来形成氧化膜，所述基板通过经由所述第一喷嘴将原料气体供给到容纳所述基板的处理容器中，同时通过第二喷嘴供给含氧气体，含氢气体通过第一喷嘴进入处理容器，其内压低于大气压; 在所述处理容器内的非等离子体气氛中使所述含氧气体与所述含氢气体混合和反应以产生原子氧; 并且用原子氧氧化该层以将该层改变为氧化物层。

8. 发明申请

US20130252434A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，加工衬底的方法，衬底处理装置和记录介质
公开(公告)号：US20130252434A1
公开(公告)日：2013-09-26
申请号：US13838209
申请日：2013-03-15
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Kazuhiro YUASA , Naonori AKAE
IPC分类号： H01L21/02
CPC分类号： H01L21/02104 , C23C16/4404 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： A method of manufacturing a semiconductor device includes carrying a substrate into a process container, forming a thin film on the substrate by supplying a source gas into the process container with the substrate accommodated therein, performing a first modification treatment to a byproduct adhered to an inside of the process container by supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under a pressure less than an atmospheric pressure, while accommodating the thin film-formed substrate in the process container, carrying the thin film-formed substrate out of the process container, and performing a second modification treatment to the byproduct adhered to the inside of the process container after the first modification treatment by supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under the pressure less than the atmospheric pressure, while not accommodating the substrate in the process container.
摘要翻译：一种半导体器件的制造方法，其特征在于，将基板搬送到处理容器内，在基板上形成薄膜，将原料气体供给到所述处理容器中，并将基板收纳在所述基板内，对附着在内部的副产物进行第一变形处理通过在小于大气压的压力下将氧含气体和含氢气体供给到加热处理容器中，同时将薄膜形成的基板容纳在处理容器中，承载薄膜形成基板脱离加工容器，对第一改性处理后附着在加工容器内部的副产物进行第二改性处理，通过在加压处理容器内以压力方式供给含氧气体和含氢气体小于大气压力，同时不容纳基板在该过程中容器。

9. 发明申请

US20180363137A1 GAS SUPPLY NOZZLE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM 审中-公开
公开(公告)号：US20180363137A1
公开(公告)日：2018-12-20
申请号：US16109417
申请日：2018-08-22
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Kosuke TAKAGI , Ryota SASAJIMA , Shintaro KOGURA , Naonori AKAE , Risa YAMAKOSHI , Toshiki FUJINO , Masato TERASAKI , Masanori MINAMI
IPC分类号： C23C16/455 , C23C16/30 , C23C16/24 , H01L21/02
摘要： Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

10. 发明申请

US20170178889A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170178889A1
公开(公告)日：2017-06-22
申请号：US15453163
申请日：2017-03-08
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Risa YAMAKOSHI , Takashi OZAKI , Masato TERASAKI , Naonori AKAE , Hideki HORITA
IPC分类号： H01L21/02 , C23C16/455 , C23C16/34
CPC分类号： H01L21/0214 , C23C16/308 , C23C16/34 , C23C16/4401 , C23C16/45527 , C23C16/45531 , H01L21/02211 , H01L21/0228
摘要： A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously, wherein (b) may include: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.

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