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    • 3. 发明授权
    • Manufacturing method of semiconductor device and semiconductor chip using SOI substrate, facilitating cleaving
    • 使用SOI衬底的半导体器件和半导体芯片的制造方法,便于切割
    • US06991996B2
    • 2006-01-31
    • US10634839
    • 2003-08-06
    • Shinji SugataniSatoshi Sekino
    • Shinji SugataniSatoshi Sekino
    • H01L21/301H01L21/46H01L21/78
    • H01L21/76254H01L2924/0002H01L2924/00
    • A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.
    • 层叠基板通过将由单晶半导体构成的器件形成层通过绝缘层层叠在由单晶半导体构成的支撑基板上而使器件形成层的结晶轴的一个方向从 支撑衬底的晶轴。 半导体器件形成在多个区域中的器件形成层中,划分为划线延伸到平行于晶体轴方向的方向,其中支撑衬底易于被切割。 通过沿着划线切断支撑基板,将层叠基板分割为多个芯片。 即使载体的移动方向和布线的延伸方向从结晶轴的易于切割的方向偏移,半导体器件也可以容易地分成芯片。