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1. 发明授权

US07054120B2 Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect 失效
标题翻译：具有垂直记录介质和头部的磁性装置具有使用隧道效应的多层再现元件
公开(公告)号：US07054120B2
公开(公告)日：2006-05-30
申请号：US10700500
申请日：2003-11-05
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

2. 发明授权

US06297929B1 Magnetic storage apparatus 有权
标题翻译：磁存储装置
公开(公告)号：US06297929B1
公开(公告)日：2001-10-02
申请号：US09557002
申请日：2000-04-20
申请人： Hisashi Takano , Masahiro Kitada , Mikio Suzuki
发明人： Hisashi Takano , Masahiro Kitada , Mikio Suzuki
IPC分类号： G11B5127
CPC分类号： G11B5/31 , G11B5/012 , G11B5/09 , G11B5/1272 , G11B5/17 , G11B5/3109 , G11B5/313 , G11B5/39 , G11B5/3967
摘要： The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of &mgr;d2/&rgr;≦500 is satisfied where d (&mgr;m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, &rgr;(&mgr;&OHgr;-cm) is the resistivity, and &mgr;is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.
摘要翻译：所提出的磁存储装置具有以下特征。记录数据的频率选择为45 MHz。考虑到涡电流损耗，设计制造设备中使用的磁头的磁极的磁性膜的厚度，电阻率和相对磁导率。此外，在d（mum）是制造磁头的磁极的磁性膜的厚度，rho（μOMEGA-cm）是电阻率的情况下，满足mud2 / rho <= 500的关系，并且mu 在低频范围内的相对磁导率。在这些条件下，记录磁场的衰减量降低到10％以下，可以解决写入模糊和记录频率变化时的覆盖值变化的问题。此外，媒体数据速率为每秒15兆字节，而面积数据记录密度为500兆比特每平方英寸或更多。

3. 发明授权

US06278593B1 Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect 失效
标题翻译：使用隧道磁阻效应的磁阻效应元件和磁头
公开(公告)号：US06278593B1
公开(公告)日：2001-08-21
申请号：US09468309
申请日：1999-12-21
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子层，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

4. 发明授权

US6064546A Magnetic storage apparatus 失效
标题翻译：磁存储装置
公开(公告)号：US6064546A
公开(公告)日：2000-05-16
申请号：US3506
申请日：1998-01-06
申请人： Hisashi Takano , Masahiro Kitada , Mikio Suzuki
发明人： Hisashi Takano , Masahiro Kitada , Mikio Suzuki
IPC分类号： G11B5/012 , G11B5/02 , G11B5/09 , G11B5/127 , G11B5/17 , G11B5/31 , G11B5/39 , G11B5/23
CPC分类号： G11B5/31 , G11B5/012 , G11B5/09 , G11B5/1272 , G11B5/17 , G11B5/3109 , G11B5/313 , G11B5/39 , G11B5/3967
摘要： The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of .mu.d.sup.2 /.rho..ltoreq.500 is satisfied where d (.mu.m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, .rho. (.mu..OMEGA.-cm) is the resistivity, and .mu. is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.
摘要翻译：所提出的磁存储装置具有以下特征。记录数据的频率选择为45 MHz。考虑到涡电流损耗，设计制造设备中使用的磁头的磁极的磁性膜的厚度，电阻率和相对磁导率。此外，满足μd2 / rho <500的关系，其中d（μm）是制造磁头的磁极的磁膜的厚度，rho（mu OMEGA-cm）是电阻率，mu是低频范围内的相对磁导率。在这些条件下，记录磁场的衰减量降低到10％以下，可以解决写入模糊和记录频率变化时的覆盖值变化的问题。此外，媒体数据速率为每秒15兆字节，而面积数据记录密度为500兆比特每平方英寸或更多。

5. 发明授权

US07159303B2 Method for manufacturing magnetic head device 失效
标题翻译：制造磁头装置的方法
公开(公告)号：US07159303B2
公开(公告)日：2007-01-09
申请号：US11371244
申请日：2006-03-09
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

6. 发明授权

US06687099B2 Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference 失效
标题翻译：具有形成在具有磁性层矫顽力差的多层膜的端层上的导体的磁头
公开(公告)号：US06687099B2
公开(公告)日：2004-02-03
申请号：US10270120
申请日：2002-10-15
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

7. 发明授权

US06483677B2 Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect 失效
标题翻译：磁盘装置包括使用隧道效应的具有多层再生元件的磁头
公开(公告)号：US06483677B2
公开(公告)日：2002-11-19
申请号：US09931897
申请日：2001-08-20
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

8. 发明授权

US06452758B2 Magnetic storage apparatus 有权
标题翻译：磁存储装置
公开(公告)号：US06452758B2
公开(公告)日：2002-09-17
申请号：US09860645
申请日：2001-05-21
申请人： Hisashi Takano , Masahiro Kitada , Mikio Suzuki
发明人： Hisashi Takano , Masahiro Kitada , Mikio Suzuki
IPC分类号： G11B5127
CPC分类号： G11B5/31 , G11B5/012 , G11B5/09 , G11B5/1272 , G11B5/17 , G11B5/3109 , G11B5/313 , G11B5/39 , G11B5/3967
摘要： The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of &mgr;d2/&rgr;≦500 is satisfied where d (&mgr;m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, &rgr; (&mgr;&OHgr;-cm) is the resistivity, and &mgr; is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.
摘要翻译：所提出的磁存储装置具有以下特征。记录数据的频率选择为45 MHz。考虑到涡电流损耗，设计制造设备中使用的磁头的磁极的磁性膜的厚度，电阻率和相对磁导率。此外，在d（mum）是制造磁头的磁极的磁性膜的厚度，rho（μOMEGA-cm）是电阻率的情况下，满足mud2 / rho <= 500的关系，并且mu 在低频范围内的相对磁导率。在这些条件下，记录磁场的衰减量降低到10％以下，可以解决写入模糊和记录频率变化时的覆盖值变化的问题。此外，媒体数据速率为每秒15兆字节，而面积数据记录密度为500兆比特每平方英寸或更多。

9. 发明授权

US6011674A Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions 失效
标题翻译：具有不同铁磁材料组成的铁磁膜子层的磁阻效应多层膜
公开(公告)号：US6011674A
公开(公告)日：2000-01-04
申请号：US626333
申请日：1996-04-02
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，可以极大地降低与磁记录介质的记录表面相对的磁性层的面积，因此可以通过具有一个磁记录介质的电流来检测来自高耐度记录磁记录介质的非常狭窄区域的磁场穿透特性，穿过中间层。

10. 发明授权

US5726837A Multilayer magnetoresistance effect-type magnetic head 失效
标题翻译：多层磁阻效应式磁头
公开(公告)号：US5726837A
公开(公告)日：1998-03-10
申请号：US328090
申请日：1994-10-24
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

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