专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08435903B2 Semiconductor substrate surface treatment method 有权
标题翻译：半导体衬底表面处理方法
公开(公告)号：US08435903B2
公开(公告)日：2013-05-07
申请号：US13069164
申请日：2011-03-22
申请人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译：在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜并释放抗蚀剂。此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

2. 发明申请

US20110143545A1 APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：装置和处理半导体基板表面的方法
公开(公告)号：US20110143545A1
公开(公告)日：2011-06-16
申请号：US12879097
申请日：2010-09-10
申请人： Hisashi OKUCHI , Tatsuhiko Koide , Shinsuke Kimura , Yoshihiro Ogawa , Hiroshi Tomita
发明人： Hisashi OKUCHI , Tatsuhiko Koide , Shinsuke Kimura , Yoshihiro Ogawa , Hiroshi Tomita
IPC分类号： H01L21/306 , B08B3/00
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67028 , H01L21/67051
摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water to the surface of the semiconductor substrate, and a second supply unit which supplies a diluted water repellent to the surface of the semiconductor substrate to form a water-repellent protective film on the surface of the convex pattern. The second supply unit comprises a buffer tank which stores the water repellent, a first supply line which supplies a purge gas to the buffer tank, a second supply line which supplies a diluent, a pump which sends off the water repellent within the buffer tank, a third supply line which supplies the water repellent sent off from the pump, and a mixing valve which mixes the diluent and the water repellent to produce the diluted water repellent.
摘要翻译：在一个实施例中，处理半导体衬底的表面的设备包括：衬底保持和旋转单元，其保持具有形成在其上的凸起图案的表面的半导体衬底，并使半导体衬底旋转，提供化学品的第一供应单元和 /或纯水，以及第二供给单元，其向半导体基板的表面供给稀释斥水剂，以在凸形图案的表面上形成防水保护膜。第二供应单元包括缓冲罐，其存储防水剂，向缓冲罐供应净化气体的第一供应管线，供应稀释剂的第二供应管线，在缓冲罐内排出拒水剂的泵，供给从泵送出的防水剂的第三供给管路和将稀释剂与防水剂混合而制成稀释斥水剂的混合阀。

3. 发明申请

US20130008868A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20130008868A1
公开(公告)日：2013-01-10
申请号：US13541167
申请日：2012-07-03
申请人： Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
发明人： Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
IPC分类号： B08B3/00 , B05C11/00 , B08B7/00 , B44C1/22
CPC分类号： H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要： According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
摘要翻译：根据一个实施例，公开了一种基板处理方法。该方法可以包括用第一液体处理底物。衬底具有形成在衬底的主表面上的结构体。该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件，并且通过执行至少一个将第二液体的至少一部分变为固体，第二液体反应，减少包含在第二液体中的溶剂的量，并使溶解在第二液体中的物质的至少一部分被分离。该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。

4. 发明授权

US09213242B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US09213242B2
公开(公告)日：2015-12-15
申请号：US13541167
申请日：2012-07-03
申请人： Yoshihiro Uozumi , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
发明人： Yoshihiro Uozumi , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
IPC分类号： B08B3/00 , G03F7/40 , H01L21/67 , G03F7/16
CPC分类号： H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要： According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
摘要翻译：根据一个实施例，公开了一种基板处理方法。该方法可以包括用第一液体处理底物。衬底具有形成在衬底的主表面上的结构体。该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件，并且通过执行至少一个将第二液体的至少一部分变为固体，第二液体反应，减少包含在第二液体中的溶剂的量，并使溶解在第二液体中的物质的至少一部分被分离。该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。

5. 发明授权

US08399357B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08399357B2
公开(公告)日：2013-03-19
申请号：US13238997
申请日：2011-09-21
申请人： Yoshihiro Ogawa , Tatsuhiko Koide , Shinsuke Kimura
发明人： Yoshihiro Ogawa , Tatsuhiko Koide , Shinsuke Kimura
IPC分类号： H01L21/44
CPC分类号： H01L21/02071 , H01L21/02057 , H01L21/265 , H01L21/31133 , H01L27/1052
摘要： A method of manufacturing a semiconductor device is disclosed. The method forms a semiconductor device including a workpiece structure having a first region and second region located adjacent to the first region formed therein. The first region includes a first pattern and the second region includes a second pattern having at least a greater pattern width or a smaller aspect ratio than the first pattern. The method includes forming the first pattern by providing a first film having a first contact angle at a top portion thereof and the second pattern by providing a second film having a second contact angle less than the first contact angle at a top portion thereof; cleaning the first and the second regions by a chemical liquid; rinsing the cleaned first and the second regions by a rinse liquid; and drying the rinsed first and the second regions.
摘要翻译：公开了制造半导体器件的方法。该方法形成半导体器件，该半导体器件包括具有第一区域的工件结构和与形成在其中的第一区域相邻的第二区域。第一区域包括第一图案，第二区域包括具有比第一图案至少更大的图案宽度或更小的纵横比的第二图案。该方法包括：通过在其顶部提供具有小于第一接触角的第二接触角的第二膜，通过提供在其顶部具有第一接触角的第一膜和第二图案来形成第一图案; 用化学液体清洗第一和第二区域; 用漂洗液冲洗净化的第一和第二区域; 并干燥漂洗的第一和第二区域。

6. 发明授权

US07097784B2 Etching method and apparatus for semiconductor wafers 失效
标题翻译：半导体晶片的蚀刻方法和装置
公开(公告)号：US07097784B2
公开(公告)日：2006-08-29
申请号：US10742992
申请日：2003-12-23
申请人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
发明人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.
摘要翻译：一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

7. 发明申请

US20100210110A1 ETCHING APPARATUS, A METHOD OF CONTROLLING AN ETCHING SOLUTION, AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：蚀刻装置，控制蚀刻溶液的方法和制造半导体器件的方法
公开(公告)号：US20100210110A1
公开(公告)日：2010-08-19
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

8. 发明申请

US20060255014A1 Etching method and apparatus for semiconductor wafers 审中-公开
公开(公告)号：US20060255014A1
公开(公告)日：2006-11-16
申请号：US11490054
申请日：2006-07-21
申请人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
发明人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

9. 发明授权

US07267742B2 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US07267742B2
公开(公告)日：2007-09-11
申请号：US10922905
申请日：2004-08-23
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

10. 发明申请

US20090317980A1 FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 审中-公开
标题翻译：过滤器，基板处理装置和基板处理方法
公开(公告)号：US20090317980A1
公开(公告)日：2009-12-24
申请号：US12548814
申请日：2009-08-27
申请人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
发明人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
IPC分类号： H01L21/306
CPC分类号： H01L21/67086 , H01L21/30604 , H01L21/31111
摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes:a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate;an H2O adding port which permits the addition of H2O;a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; anda protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.
摘要翻译：一种可连接到外部循环系统的过滤器，该循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，该过滤器包括：化学物质进料口，其允许含有由于蚀刻所沉积的颗粒的H 3 PO 4溶液进料基质; 一个允许加入H 2 O的H 2 O加入口; 通过加入H 2 O使热分布不均匀的H 3 PO 4溶液除去颗粒的过滤膜; 以及保护构件，其设置在H 2 O添加口和过滤膜之间，并且保护过滤膜免于通过加入H 2 O引起的H 3 PO 4溶液的撞击。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式