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    • 2. 发明授权
    • Surface-heating apparatus and surface-treating method
    • 表面处理装置和表面处理方法
    • US5240556A
    • 1993-08-31
    • US893018
    • 1992-06-03
    • Yoshio IshikawaJunichi AramiTowl IkedaTeruo Iwata
    • Yoshio IshikawaJunichi AramiTowl IkedaTeruo Iwata
    • C23C16/54H01L21/00
    • H01L21/67207C23C16/54H01L21/67069H01L21/67115
    • According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.
    • 根据本发明,能够高精度地蚀刻被处理物的表面处理装置,抑制在空气中沉积在被蚀刻物上的有害气体的排出,防止物体的表面沉积/附着反应 产品和液滴被公开。 表面处理装置包括用于蚀刻被激活的蚀刻气体处理的被加载物体的第一处理室,用于将第一处理室设置在低压的排出构件,用于冷却在第一处理中加载的物体的冷却装置 第二处理室,其中装载有由第一处理室蚀刻的物体,用于将第二处理室设置在低压的排气构件,以及用于对装载在第二处理室中的物体进行退火的加热构件。
    • 4. 发明授权
    • Probe device
    • 探头设备
    • US5061894A
    • 1991-10-29
    • US633254
    • 1990-12-21
    • Towl Ikeda
    • Towl Ikeda
    • G01R1/073
    • G01R1/0735
    • A probe device for measuring the electric characteristics of an IC chip on a wafer, etc. is disclosed. The probe device includes a unit having a micro-strip line structure in which a plurality of probes are integrally formed. The unit comprises a flexible insulating quartz base plate, a plurality of mutually insulated lead strips provided on one surface of the base plate, and a ground strip provided on the other surface of the base plate. Notches are formed in those regions of the insulating base plate, which are located between the lead strips at an end portion of the unit. The unit is supported such that the tip end portion of the unit is formed as a free-end portion and the unit is inclined by a predetermined angle toward electrode pads on the IC chip with respect to an imaginary horizontal plane. The combination of each of the lead strip, the insulating quartz base plate and the ground strip constitute a micro-strip line. At the tip end portion of the unit, each micro-strip line serves as the probe. A tip portion of each lead strip serves as a contact of the probe.
    • 公开了一种用于测量晶片上的IC芯片的电特性的探针装置等。 探针装置包括具有多个探针一体形成的微带线结构的单元。 该单元包括柔性绝缘石英基板,设置在基板的一个表面上的多个相互绝缘的引线条和设置在基板的另一个表面上的接地条。 在绝缘基板的位于该单元的端部的引线条之间的那些区域中形成有凹口。 该单元被支撑为使得单元的前端部形成为自由端部,并且该单元相对于假想水平面向IC芯片上的电极焊盘倾斜预定角度。 每个引线条,绝缘石英基板和接地条的组合构成微带线。 在该单元的末端部,每个微带线用作探针。 每个引线条的尖端部分用作探针的接触点。
    • 5. 发明授权
    • Process gas delivery system for CVD having a cleaning subsystem
    • 具有清洁子系统的CVD工艺气体输送系统
    • US6033479A
    • 2000-03-07
    • US64401
    • 1998-04-22
    • Towl Ikeda
    • Towl Ikeda
    • B08B9/02B08B9/032C23C16/44C23C16/448
    • B08B9/032C23C16/4407C23C16/4482
    • A process gas delivery system incorporating a cleaning solution delivery subsystem for chemical vapor deposition. The system includes a slanted cleaning solution feed pipe for introducing a cleaning solution into the process gas delivery system and for disposal of waste cleaning solution from the process gas delivery system. Automatic determination of maintenance time may be accomplished by using an optical sensor provided on the process gas delivery pipe that detects the accumulation of the deposition material within the piping. The sensor may also be used to detect the cleaning solution residue inside the piping after cleaning and the liquid level during deposition.
    • 一种包含用于化学气相沉积的清洁溶液输送子系统的工艺气体输送系统。 该系统包括用于将清洁溶液引入工艺气体输送系统中并用于从处理气体输送系统处理废物清洁溶液的倾斜的清洁溶液进料管。 维护时间的自动确定可以通过使用设置在处理气体输送管上的光学传感器来实现,其检测沉积材料在管道内的积聚。 传感器也可用于检测清洗后管道内的清洁液残留物和沉积过程中的液面。
    • 7. 发明授权
    • Decompression container
    • 减压容器
    • US5676757A
    • 1997-10-14
    • US628016
    • 1996-04-04
    • Towl IkedaKatsumi IshiiYoji Iizuka
    • Towl IkedaKatsumi IshiiYoji Iizuka
    • B01J3/03C23C14/56H01L21/00C23C16/00
    • H01L21/67017B01J3/03C23C14/566
    • There is a gap between the respective inner regions of the end face of the cylindrical side wall and the abutting portion of the top plate, which are situated inside the seal member. Even though the top plate is bent inward by atmospheric pressure when the container is decompressed to a predetermined degree of vacuum, therefore, the abutting portion thereof cannot come into contact with the inner edge of the end face of the cylindrical side wall. Thus, if decompression and exposure to atmospheric pressure are repeated to bend the cylindrical side wall repeatedly, there is no possibility of the inner edge portion of the end face of the cylindrical side wall being separated or rubbed off to produce dust. Moreover, the cylindrical side wall and top plate are joined together in the region outside the seal member. If dust is produced by the contact between the cylindrical side wall and top plate at their junctions outside the seal member, therefore, it is prevented from entering the container by the seal member. Thus, a clean atmosphere in the container cannot be contaminated by the dust.
    • 在圆筒形侧壁的端面的各个内部区域和位于密封构件内部的顶板的抵接部分之间存在间隙。 因此,即使当容器减压到预定的真空度时顶板向内弯曲,因此其抵接部分不能与圆筒形侧壁的端面的内边缘接触。 因此,如果重复减压和暴露于大气压力以反复地弯曲圆筒形侧壁,则不会使圆柱形侧壁的端面的内边缘部分分离或摩擦而产生灰尘。 此外,圆筒形侧壁和顶板在密封构件外部的区域中接合在一起。 因此,如果在密封部件外侧的接合处产生圆筒形侧壁和顶板之间的灰尘,则可防止密封件进入容器。 因此,容器中的清洁气氛不会被灰尘污染。
    • 9. 发明授权
    • Quartz probe apparatus
    • 石英探针仪
    • US5091694A
    • 1992-02-25
    • US472228
    • 1990-01-30
    • Towl IkedaHisashi Koike
    • Towl IkedaHisashi Koike
    • G01R1/073
    • G01R1/07342
    • A quartz probe apparatus having a plurality of quartz probe bodies and a metal pattern layer formed on each of the quartz probe bodies. A plurality of quartz probe bodies integrally incorporate a microprobe portion including a number of microprobes corresponding to electrode arrays of an object of examination, a pattern wiring portion connected with the microprobe portion, and an electrode pad portion connected with the pattern wiring portion. A plurality of quartz probe bodies are formed by etching a Z-plane of a quartz plate perpendicular to the crystal axis Z thereof.
    • 一种石英探针装置,具有形成在每个石英探针体上的多个石英探针体和金属图案层。 多个石英探针体一体地结合有包括与检查对象的电极阵列相对应的多个微针的微探针部分,与该微探针部连接的图形布线部以及与图案布线部连接的电极焊盘部。 通过蚀刻垂直于其晶轴Z的石英板的Z平面形成多个石英探针体。
    • 10. 发明授权
    • Trap apparatus
    • 陷阱装置
    • US5819683A
    • 1998-10-13
    • US639926
    • 1996-04-26
    • Towl IkedaTakashi Horiuchi
    • Towl IkedaTakashi Horiuchi
    • B01J3/02B01D51/00B01D53/34B01D53/72B01J19/00C23C16/44C23C16/455H01L21/205H01L21/285C23C16/00
    • C23C16/4412B01D53/34B01D53/72Y02C20/30
    • There is provided a trap apparatus, which is inserted in a vacuum exhaust system sucking and discharging an exhaust gas from a process apparatus by a vacuum pump, for trapping a tramp material contained in the exhaust gas, said trap apparatus comprising, a trapping passage container inserted in the exhaust passage, at the upstream side of the vacuum pump, and a heating trap, housed in the trapping passage container, for heating the exhaust gas to a predetermined temperature while the heating trap is brought into contact with the exhaust gas flowing, thereby subjecting the tramp material in the exhaust gas to pyrolysis. Thus, the unaffected process gas circulated through the exhaust passage is touched by the heating trap and pyrolytically decomposed, and separated metal adheres to the heating trap so as to be trapped thereby. The heating trap is formed of an electric heating coil formed spirally so as to define a gap between the wire thereof, so that the electric heating coil can be sufficiently brought into contact with the exhaust gas and the exhaust gas is allowed to flow through the gaps between the wires. Therefore, the area that the exhaust gas is brought into contact with the wires of the electric heating coil becomes larger, and the exhaust gas can flow through the gaps to secure the flowing conductance. As a result, a balance of the contact area and the flowing conductance is maintained.
    • 提供了一种捕集装置,其被插入到真空排气系统中,该真空排气系统通过真空泵从处理装置吸入和排出废气,用于捕集包含在废气中的流浪物料,所述捕集装置包括捕集通道容器 插入到排气通道中,在真空泵的上游侧,以及容纳在捕集通道容器中的加热阱,用于在排气与流动的废气接触的同时将废气加热到预定温度, 从而使废气中的流质进行热解。 因此,通过排气通道循环的未受影响的工艺气体被加热阱接触并被热分解,并且将分离的金属粘附到加热阱以便被捕获。 加热阱由螺旋状形成的电加热线圈形成,以便在其导线之间限定间隙,使得电加热线圈能够充分地与排气接触,并且使废气流过间隙 电线之间。 因此,排气与电加热线圈的线接触的面积变大,排气能够流过间隙,以确保流动电导。 结果,保持了接触面积和流动电导的平衡。