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1. 发明申请

US20060235199A1 Reagent for amplifying amyloid fibrosis of amyloid ss-protein 审中-公开
标题翻译：用于放大淀粉样蛋白β-蛋白的淀粉样蛋白纤维化的试剂
公开(公告)号：US20060235199A1
公开(公告)日：2006-10-19
申请号：US10568392
申请日：2004-06-21
申请人： Hisakazu Mihara , Tsuyoshi Takahashi , Hideo Ooshima
发明人： Hisakazu Mihara , Tsuyoshi Takahashi , Hideo Ooshima
IPC分类号： G01N33/53 , C07K7/08
CPC分类号： C07K14/4711
摘要： There are disclosed a natural peptide search in which a template reaction with the nucleus of a minute amount of amyloid β-protein having undergone amyloid fibrosis is induced so as to form amyloid fibers, followed by fiber amount increase and amplification; designing and development of a novel artificial peptide which can be a substitute therefor; a method of amplifying the amyloid fibrosis of amyloid β-protein with the use thereof and a reagent for use therein; and a method of detecting disease caused by amyloidosis and a reagent for use therein. In particular, there are provided a method of amplifying the amyloid fibrosis of amyloid β-protein with the use of a reagent comprising a peptide composed of 14 to 23 residues of amyloid β-peptide or a peptide resulting from substitution of all the positive-charge side chain amino acids of the peptide with Lys and substitution of all the negative-charge side chain amino acids thereof with Glu; a reagent for use therein; a method of detecting disease caused by amyloidosis with the use of a reagent comprising the above peptide; a reagent for use therein; and a novel artificial peptide which can be used therein.
摘要翻译：公开了一种天然肽搜索，其中诱导与微量淀粉样蛋白β蛋白的细胞核的模板反应，以形成淀粉样蛋白纤维，然后进行纤维量的增加和扩增; 一种新型人造肽的设计与开发，可作为替代品; 一种使用淀粉样蛋白β蛋白的淀粉样蛋白纤维化进行扩增的方法和用于其中的试剂; 以及检测由淀粉样变性引起的疾病的方法和用于其中的试剂。特别地，提供了使用包含由14至23个淀粉样蛋白β肽残基组成的肽的试剂或由所有正电荷取代产生的肽的淀粉样蛋白β蛋白的淀粉样蛋白纤维化的方法肽的侧链氨基酸与Lys，并用Glu取代所有负电荷侧链氨基酸; 用于其中的试剂; 使用包含上述肽的试剂检测由淀粉样变性引起的疾病的方法; 用于其中的试剂; 和可用于其中的新型人造肽。

2. 发明授权

US09295489B2 Guide tube system for forming pneumoperitoneum and providing route for accessing body cavity 有权
标题翻译：导气管系统，用于形成气腹并提供进入体腔的途径
公开(公告)号：US09295489B2
公开(公告)日：2016-03-29
申请号：US13144139
申请日：2010-01-20
申请人： Kiyokazu Nakajima , Toshirou Nishida , Tsuyoshi Takahashi , Yoshihito Souma
发明人： Kiyokazu Nakajima , Toshirou Nishida , Tsuyoshi Takahashi , Yoshihito Souma
IPC分类号： A61M37/00 , A61M1/00 , A61M5/178 , A61M31/00 , A61F11/00 , A61B17/34 , A61B1/00 , A61B17/29 , A61B17/00 , A61B19/00 , A61M25/00 , A61J15/00
CPC分类号： A61B17/3474 , A61B17/29 , A61B17/3403 , A61B17/3415 , A61B2017/00278 , A61B2090/062 , A61J15/0007 , A61M25/007
摘要： The guide tube for forming a pneumoperitoneum of the present invention comprising a flexible tube having an inner cavity, has an outer diameter that allows the guide tube to be inserted into a puncture needle, a distal end of the guide tube is closed, the distal end is provided with a tip portion that can be held by holding forceps provided in an endoscope, a proximal end of the guide tube is provided with a connecting portion to an insufflation apparatus, and the guide tube is provided with a side hole region having at least one side hole that can establish communication between the inner cavity of the flexible tube and the outside in a case where the inner cavity is pressurized through insufflation. According to the guide tube for forming a pneumoperitoneum of the present invention, only with single puncture from the body surface into the lumen of a lumen organ, a preliminary pneumoperitoneum can be safely and reliably created without damaging other organs, and, at the same time, the part of the lumen organ wall pierced during formation of the pneumoperitoneum can be used as a route for accessing the peritoneal cavity from the lumen of the lumen organ.
摘要翻译：本发明的用于形成气腹的导管包括具有内腔的柔性管，具有允许导管插入穿刺针的外径，导管的远端封闭，远端设置有可以通过设置在内窥镜中的保持镊子来保持的前端部，导管的近端设置有与吹气装置的连接部，并且导管设置有至少具有侧孔区域在内腔通过吹气加压的情况下，可以在柔性管的内腔与外部之间建立连通的一个侧孔。根据本发明的气腹形成用引导管，只要从身体表面单次穿刺到管腔器官的腔内即可安全可靠地产生气腹，而不会损伤其他器官，同时，在气腹形成期间穿孔的管腔器官壁的部分可以用作从管腔器官的腔进入腹膜腔的途径。

3. 发明授权

US09190145B2 Drive method for memory element and storage device using memory element 有权
标题翻译：使用存储元件的存储元件和存储设备的驱动方法
公开(公告)号：US09190145B2
公开(公告)日：2015-11-17
申请号：US13819247
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C11/00 , G11C13/00 , H01L27/10
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
摘要翻译：在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

4. 发明授权

US08945369B2 Biosensor measurement system and measurement method 有权
标题翻译：生物传感器测量系统和测量方法
公开(公告)号：US08945369B2
公开(公告)日：2015-02-03
申请号：US12375111
申请日：2007-07-26
申请人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
发明人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
IPC分类号： C12Q1/25 , G01N27/26 , G01N27/327
CPC分类号： G01N27/3274
摘要： There is provided a biosensor measurement system which can output a highly-precise measurement result even when an impact such as falling of the sensor occurs or the biosensor is an exposed sensor. An abnormal waveform detection electrode is provided in addition to electrodes for quantitative determination of a target substance. Therefore, when an impact is caused by such as falling of the sensor in a halt period where no voltage is applied in a voltage application algorithm, the abnormal waveform detection electrode can detect the impact. Further, also an exposed sensor can be detected by the abnormal waveform which is detected by the abnormal waveform detection electrode.
摘要翻译：提供了一种生物传感器测量系统，即使当传感器出现下降或生物传感器是暴露的传感器时也能输出高精度的测量结果。除了用于定量目标物质的电极之外，还提供异常波形检测电极。因此，在电压施加算法中，如果在不施加电压的停止期间传感器的下降引起冲击，则异常波形检测电极可以检测出影响。此外，也可以通过由异常波形检测电极检测到的异常波形来检测曝光的传感器。

5. 发明申请

US20130337571A1 BIOLOGICAL SAMPLE MEASURING DEVICE AND METHOD FOR MEASURING BIOLOGICAL SAMPLE USING SAME 有权
标题翻译：生物样品测量装置和使用其测量生物样品的方法
公开(公告)号：US20130337571A1
公开(公告)日：2013-12-19
申请号：US14003090
申请日：2012-05-10
申请人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
发明人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
IPC分类号： G01N33/66
CPC分类号： G01N33/66 , G01N27/3273 , G01N27/3274 , Y10T436/144444
摘要： With this biological sample measuring device, the determination section performs measurement at specific intervals in a first measurement period from the start of measurement until a first time, and performs measurement at specific intervals in a second measurement period that comes after the first measurement period, calculates the difference between the measurement values in corresponding specific periods, and finds a plurality of first difference determination values, on the basis of a plurality of current values measured in the first measurement period and a plurality of current values measured in the second measurement period, finds a second difference determination value by finding the difference at specific intervals in the plurality of first difference determination values, and determines whether or not a reagent movement error and/or exposure error of the biological sample measurement sensor has occurred, on the basis of the first and second difference determination values.
摘要翻译：在该生物样本测定装置中，决定部在从开始测量直到第一次的第一测量期间内以特定间隔进行测量，并且在第一测定周期之后的第二测定期间内，以规定间隔进行测定，基于在第一测量周期中测量的多个电流值和在第二测量周期中测量的多个电流值，在相应的特定周期中的测量值之间的差异，并且找到多个第一差分确定值，找到第二差分确定值，通过在多个第一差分确定值中以特定间隔找到差异，并且基于第一差异确定值确定生物样本测量传感器的试剂移动误差和/或曝光误差是否已经发生和第二差分确定值。

6. 发明授权

US08507122B2 Power supply device including a plurality of battery cells arranged side by side 有权
标题翻译：电源装置，其包括并排布置的多个电池单元
公开(公告)号：US08507122B2
公开(公告)日：2013-08-13
申请号：US12914251
申请日：2010-10-28
申请人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
发明人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
IPC分类号： H01M10/50
CPC分类号： H01M10/0413 , H01M2/1072 , H01M6/42 , H01M10/613 , H01M10/625 , H01M10/647 , H01M10/6557 , H01M10/6563 , H01M10/6566
摘要： A power supply device includes rectangular battery cells 1, resin separators 2, end spacers 17, thick metal end plates 10, and coupling members 11. The separator 2 is inserted between the cells 1 to insulate adjacent cells 1 from each other, and in thermal contact with the cells 1. The end spacers 17 cover end battery cells 1 on the opposed end surfaces of a battery block composed of the cells 1 and the separators 2 alternately arranged. The end plates 10 cover the surfaces of the end spacers 17. The coupling members 11 couple the end plates 10 to each other. The separators 2 form gaps 4 for flowing air along the surfaces of the cells 1 in contact with the separators 2. The end spacers 17 have hollow layers 18 on their surfaces in contact with the cells 1, and define closed chambers.
摘要翻译：电源装置包括矩形电池单元1，树脂隔板2，端部间隔件17，厚金属端板10和联接构件11.隔板2插入电池单元1之间，以使相邻电池单元1相互隔离，与电池单元1接触。端部间隔件17覆盖由电池单元1和分隔件2交替布置的电池块的相对端面上的端部电池单元1。端板10覆盖端部间隔件17的表面。联接构件11将端板10彼此连接。分离器2形成用于沿着与隔板2接触的电池单元1的表面流动空气的间隙4.端部间隔件17在其与电池单元1接触的表面上具有中空层18，并且限定闭合室。

7. 发明授权

US08183558B2 Compound semiconductor device with T-shaped gate electrode 有权
标题翻译：具有T形栅电极的复合半导体器件
公开(公告)号：US08183558B2
公开(公告)日：2012-05-22
申请号：US13023146
申请日：2011-02-08
申请人： Kozo Makiyama , Tsuyoshi Takahashi
发明人： Kozo Makiyama , Tsuyoshi Takahashi
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/66431
摘要： A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.
摘要翻译：化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层，并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜，其形成在所述盖层的上表面上，并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜，具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅电极开口形成在凹部上的栅电极。

8. 发明授权

US08174871B2 Memory cell array 有权
标题翻译：存储单元阵列
公开(公告)号：US08174871B2
公开(公告)日：2012-05-08
申请号：US12644608
申请日：2009-12-22
申请人： Tsuyoshi Takahashi , Yutaka Hayashi , Yuichiro Masuda , Shigeo Furuta , Masatoshi Ono
发明人： Tsuyoshi Takahashi , Yutaka Hayashi , Yuichiro Masuda , Shigeo Furuta , Masatoshi Ono
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.
摘要翻译：公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定字线进行读取，并指定第一位线以向第二位线提供低于写入电压的读取电压，并且当字线的电压变为栅极阈值电压以上并且驱动电压和栅极阈值电压之和时，指定字线或更少。

9. 发明授权

US07697225B2 Storage apparatus, method of controlling amount of write current overshoot in storage apparatus and storage medium storing its program 失效
标题翻译：存储装置，控制存储装置中的写入电流过冲量和存储其程序的存储介质的方法
公开(公告)号：US07697225B2
公开(公告)日：2010-04-13
申请号：US11901347
申请日：2007-09-17
申请人： Tsuyoshi Takahashi
发明人： Tsuyoshi Takahashi
IPC分类号： G11B5/09
CPC分类号： G11B5/02 , G11B5/09 , G11B20/10009 , G11B20/10481 , G11B20/18 , G11B2005/001 , G11B2220/2516
摘要： A storage apparatus comprises: a current parameter varying section that can make a write current used for writing information on the storage medium and an overshoot amount corresponding to the write current variable; a detection section that detects an error rate or its corresponding error rate parameter for a plurality of combinations of the write current and overshoot amount varied by the current parameter varying section; a saturation factor calculation section that calculates a saturation factor representing a change in the error rate relative to a unit write current value from the error rate or error rate parameter detected by the detection section; and a current parameter setting section that determines current parameters based on the saturation factor obtained by the saturation factor calculation section for setting.
摘要翻译：存储装置包括：当前参数变化部分，其可以使用于在存储介质上写入信息的写入电流和与写入电流变量相对应的过冲量; 检测部，其检测由所述当前参数变化部变化的写入电流和过冲量的多个组合的误差率或其对应的误差率参数; 饱和因子计算部，从检测部检测出的误差率或误差率参数，计算表示相对于单位写入电流值的误差率变化的饱和因数; 以及电流参数设定部，其基于由所述饱和因子计算部获得的所述饱和因子确定当前参数以进行设定。

10. 发明授权

US07679946B2 Memory element array having switching elements including a gap of nanometer order 有权
标题翻译：具有包括纳米级间隙的开关元件的存储元件阵列
公开(公告)号：US07679946B2
公开(公告)日：2010-03-16
申请号：US12141492
申请日：2008-06-18
申请人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono
发明人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono
IPC分类号： G11C13/00 , G11C11/00
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/003 , G11C2213/76 , H01L27/2418 , H01L45/04 , H01L45/124
摘要： Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.
摘要翻译：公开了包括以阵列布置的多个存储元件的存储元件阵列，其中存储元件是各自包括纳米级的间隙的开关元件，其中通过在电极之间施加预定电压而引起电阻的切换现象，并且存储元件阵列设置有分别与开关元件串联连接的隧道元件，每个隧道元件防止在施加预定电压时产生流向另一开关元件的潜行电流电流。

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