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1. 发明授权

US08183558B2 Compound semiconductor device with T-shaped gate electrode 有权
标题翻译：具有T形栅电极的复合半导体器件
公开(公告)号：US08183558B2
公开(公告)日：2012-05-22
申请号：US13023146
申请日：2011-02-08
申请人： Kozo Makiyama , Tsuyoshi Takahashi
发明人： Kozo Makiyama , Tsuyoshi Takahashi
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/66431
摘要： A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.
摘要翻译：化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层，并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜，其形成在所述盖层的上表面上，并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜，具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅电极开口形成在凹部上的栅电极。

2. 发明授权

US07906417B2 Compound semiconductor device with T-shaped gate electrode and its manufacture 有权
标题翻译：具有T形栅电极的复合半导体器件及其制造
公开(公告)号：US07906417B2
公开(公告)日：2011-03-15
申请号：US12190216
申请日：2008-08-12
申请人： Kozo Makiyama , Tsuyoshi Takahashi
发明人： Kozo Makiyama , Tsuyoshi Takahashi
IPC分类号： H01L21/44
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/66431
摘要： A method for manufacturing a compound semiconductor device forms an EB resist layer on first SiN film, performs EB exposure at high dose for recess forming opening and at low dose for eaves removing opening, develops the high dose EB resist pattern to etch the first SiN film, selectively etches the cap layer to form a recess wider than the opening of the first SiN film leaving eaves of SiN, develops the low dose EB resist pattern to form the eaves removing opening, etches the first SiN film to extinguish the eaves, forms second SiN film on the exposed surface, forms a resist pattern having a gate electrode opening on the second SiN film to etch the second SiN film, forms a metal layer to form a gate electrode by lift-off. The SiN film in eaves shape will not be left.
摘要翻译：一种化合物半导体器件的制造方法在第一SiN膜上形成EB抗蚀剂层，以高剂量进行用于凹部形成开口的EB曝光，并以低剂量进行檐部剥离开口的EB曝光，形成高剂量EB抗蚀剂图案以蚀刻第一SiN膜选择性地蚀刻覆盖层以形成比离开SiN的檐的第一SiN膜的开口更宽的凹陷，形成低剂量EB抗蚀剂图案以形成檐口去除开口，蚀刻第一SiN膜以扑灭檐口，形成第二个在曝光表面上形成SiN膜，形成在第二SiN膜上具有栅电极开口以蚀刻第二SiN膜的抗蚀剂图案，通过剥离形成金属层以形成栅电极。檐形状的SiN膜不会留下。

3. 发明授权

US06998695B2 Semiconductor device having a mushroom gate with hollow space 有权
标题翻译：具有中空空间的蘑菇门的半导体装置
公开(公告)号：US06998695B2
公开(公告)日：2006-02-14
申请号：US10649643
申请日：2003-08-28
申请人： Kozo Makiyama , Tsuyoshi Takahashi , Masahiro Nishi
发明人： Kozo Makiyama , Tsuyoshi Takahashi , Masahiro Nishi
IPC分类号： H01L29/00
CPC分类号： H01L29/66462 , H01L21/28587 , H01L29/42316
摘要： A method of manufacturing a semiconductor device has the steps of: forming a mushroom gate traversing an active region of a semiconductor substrate and having a fine gate and an expanded over gate formed thereon; coating a first organic material film on the semiconductor substrate; patterning the first organic material film and leaving the first organic material film only near the mushroom gate; coating a second organic (insulating) material film covering the left first organic material film; forming an opening through the second organic material film to expose the first organic material film; and dissolving and removing the first organic material film via the opening to form a hollow space in the second organic material film.
摘要翻译：一种半导体器件的制造方法，其特征在于：形成穿过半导体衬底的有源区并形成有精细栅极和扩展栅极的蘑菇栅极; 在半导体衬底上涂覆第一有机材料膜; 图案化第一有机材料膜并仅在蘑菇门附近留下第一有机材料膜; 涂覆覆盖左第一有机材料膜的第二有机（绝缘）材料膜; 通过所述第二有机材料膜形成开口以暴露所述第一有机材料膜; 并且经由所述开口溶解并除去所述第一有机材料膜，以在所述第二有机材料膜中形成中空空间。

4. 发明申请

US20110127545A1 COMPOUND SEMICONDUCTOR DEVICE WITH T-SHAPED GATE ELECTRODE 有权
标题翻译：具有T形门电极的化合物半导体器件
公开(公告)号：US20110127545A1
公开(公告)日：2011-06-02
申请号：US13023146
申请日：2011-02-08
申请人： Kozo Makiyama , Tsuyoshi Takahashi
发明人： Kozo Makiyama , Tsuyoshi Takahashi
IPC分类号： H01L29/161 , H01L29/78
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/66431
摘要： A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.
摘要翻译：化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层，并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜，其形成在所述盖层的上表面上，并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜，具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅极电极开口形成在凹部上的栅电极。

5. 发明授权

US09295489B2 Guide tube system for forming pneumoperitoneum and providing route for accessing body cavity 有权
标题翻译：导气管系统，用于形成气腹并提供进入体腔的途径
公开(公告)号：US09295489B2
公开(公告)日：2016-03-29
申请号：US13144139
申请日：2010-01-20
申请人： Kiyokazu Nakajima , Toshirou Nishida , Tsuyoshi Takahashi , Yoshihito Souma
发明人： Kiyokazu Nakajima , Toshirou Nishida , Tsuyoshi Takahashi , Yoshihito Souma
IPC分类号： A61M37/00 , A61M1/00 , A61M5/178 , A61M31/00 , A61F11/00 , A61B17/34 , A61B1/00 , A61B17/29 , A61B17/00 , A61B19/00 , A61M25/00 , A61J15/00
CPC分类号： A61B17/3474 , A61B17/29 , A61B17/3403 , A61B17/3415 , A61B2017/00278 , A61B2090/062 , A61J15/0007 , A61M25/007
摘要： The guide tube for forming a pneumoperitoneum of the present invention comprising a flexible tube having an inner cavity, has an outer diameter that allows the guide tube to be inserted into a puncture needle, a distal end of the guide tube is closed, the distal end is provided with a tip portion that can be held by holding forceps provided in an endoscope, a proximal end of the guide tube is provided with a connecting portion to an insufflation apparatus, and the guide tube is provided with a side hole region having at least one side hole that can establish communication between the inner cavity of the flexible tube and the outside in a case where the inner cavity is pressurized through insufflation. According to the guide tube for forming a pneumoperitoneum of the present invention, only with single puncture from the body surface into the lumen of a lumen organ, a preliminary pneumoperitoneum can be safely and reliably created without damaging other organs, and, at the same time, the part of the lumen organ wall pierced during formation of the pneumoperitoneum can be used as a route for accessing the peritoneal cavity from the lumen of the lumen organ.
摘要翻译：本发明的用于形成气腹的导管包括具有内腔的柔性管，具有允许导管插入穿刺针的外径，导管的远端封闭，远端设置有可以通过设置在内窥镜中的保持镊子来保持的前端部，导管的近端设置有与吹气装置的连接部，并且导管设置有至少具有侧孔区域在内腔通过吹气加压的情况下，可以在柔性管的内腔与外部之间建立连通的一个侧孔。根据本发明的气腹形成用引导管，只要从身体表面单次穿刺到管腔器官的腔内即可安全可靠地产生气腹，而不会损伤其他器官，同时，在气腹形成期间穿孔的管腔器官壁的部分可以用作从管腔器官的腔进入腹膜腔的途径。

6. 发明授权

US09190145B2 Drive method for memory element and storage device using memory element 有权
标题翻译：使用存储元件的存储元件和存储设备的驱动方法
公开(公告)号：US09190145B2
公开(公告)日：2015-11-17
申请号：US13819247
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C11/00 , G11C13/00 , H01L27/10
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
摘要翻译：在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

7. 发明授权

US08945369B2 Biosensor measurement system and measurement method 有权
标题翻译：生物传感器测量系统和测量方法
公开(公告)号：US08945369B2
公开(公告)日：2015-02-03
申请号：US12375111
申请日：2007-07-26
申请人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
发明人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
IPC分类号： C12Q1/25 , G01N27/26 , G01N27/327
CPC分类号： G01N27/3274
摘要： There is provided a biosensor measurement system which can output a highly-precise measurement result even when an impact such as falling of the sensor occurs or the biosensor is an exposed sensor. An abnormal waveform detection electrode is provided in addition to electrodes for quantitative determination of a target substance. Therefore, when an impact is caused by such as falling of the sensor in a halt period where no voltage is applied in a voltage application algorithm, the abnormal waveform detection electrode can detect the impact. Further, also an exposed sensor can be detected by the abnormal waveform which is detected by the abnormal waveform detection electrode.
摘要翻译：提供了一种生物传感器测量系统，即使当传感器出现下降或生物传感器是暴露的传感器时也能输出高精度的测量结果。除了用于定量目标物质的电极之外，还提供异常波形检测电极。因此，在电压施加算法中，如果在不施加电压的停止期间传感器的下降引起冲击，则异常波形检测电极可以检测出影响。此外，也可以通过由异常波形检测电极检测到的异常波形来检测曝光的传感器。

8. 发明申请

US20130337571A1 BIOLOGICAL SAMPLE MEASURING DEVICE AND METHOD FOR MEASURING BIOLOGICAL SAMPLE USING SAME 有权
标题翻译：生物样品测量装置和使用其测量生物样品的方法
公开(公告)号：US20130337571A1
公开(公告)日：2013-12-19
申请号：US14003090
申请日：2012-05-10
申请人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
发明人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
IPC分类号： G01N33/66
CPC分类号： G01N33/66 , G01N27/3273 , G01N27/3274 , Y10T436/144444
摘要： With this biological sample measuring device, the determination section performs measurement at specific intervals in a first measurement period from the start of measurement until a first time, and performs measurement at specific intervals in a second measurement period that comes after the first measurement period, calculates the difference between the measurement values in corresponding specific periods, and finds a plurality of first difference determination values, on the basis of a plurality of current values measured in the first measurement period and a plurality of current values measured in the second measurement period, finds a second difference determination value by finding the difference at specific intervals in the plurality of first difference determination values, and determines whether or not a reagent movement error and/or exposure error of the biological sample measurement sensor has occurred, on the basis of the first and second difference determination values.
摘要翻译：在该生物样本测定装置中，决定部在从开始测量直到第一次的第一测量期间内以特定间隔进行测量，并且在第一测定周期之后的第二测定期间内，以规定间隔进行测定，基于在第一测量周期中测量的多个电流值和在第二测量周期中测量的多个电流值，在相应的特定周期中的测量值之间的差异，并且找到多个第一差分确定值，找到第二差分确定值，通过在多个第一差分确定值中以特定间隔找到差异，并且基于第一差异确定值确定生物样本测量传感器的试剂移动误差和/或曝光误差是否已经发生和第二差分确定值。

9. 发明授权

US08507122B2 Power supply device including a plurality of battery cells arranged side by side 有权
标题翻译：电源装置，其包括并排布置的多个电池单元
公开(公告)号：US08507122B2
公开(公告)日：2013-08-13
申请号：US12914251
申请日：2010-10-28
申请人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
发明人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
IPC分类号： H01M10/50
CPC分类号： H01M10/0413 , H01M2/1072 , H01M6/42 , H01M10/613 , H01M10/625 , H01M10/647 , H01M10/6557 , H01M10/6563 , H01M10/6566
摘要： A power supply device includes rectangular battery cells 1, resin separators 2, end spacers 17, thick metal end plates 10, and coupling members 11. The separator 2 is inserted between the cells 1 to insulate adjacent cells 1 from each other, and in thermal contact with the cells 1. The end spacers 17 cover end battery cells 1 on the opposed end surfaces of a battery block composed of the cells 1 and the separators 2 alternately arranged. The end plates 10 cover the surfaces of the end spacers 17. The coupling members 11 couple the end plates 10 to each other. The separators 2 form gaps 4 for flowing air along the surfaces of the cells 1 in contact with the separators 2. The end spacers 17 have hollow layers 18 on their surfaces in contact with the cells 1, and define closed chambers.
摘要翻译：电源装置包括矩形电池单元1，树脂隔板2，端部间隔件17，厚金属端板10和联接构件11.隔板2插入电池单元1之间，以使相邻电池单元1相互隔离，与电池单元1接触。端部间隔件17覆盖由电池单元1和分隔件2交替布置的电池块的相对端面上的端部电池单元1。端板10覆盖端部间隔件17的表面。联接构件11将端板10彼此连接。分离器2形成用于沿着与隔板2接触的电池单元1的表面流动空气的间隙4.端部间隔件17在其与电池单元1接触的表面上具有中空层18，并且限定闭合室。

10. 发明授权

US08174871B2 Memory cell array 有权
标题翻译：存储单元阵列
公开(公告)号：US08174871B2
公开(公告)日：2012-05-08
申请号：US12644608
申请日：2009-12-22
申请人： Tsuyoshi Takahashi , Yutaka Hayashi , Yuichiro Masuda , Shigeo Furuta , Masatoshi Ono
发明人： Tsuyoshi Takahashi , Yutaka Hayashi , Yuichiro Masuda , Shigeo Furuta , Masatoshi Ono
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.
摘要翻译：公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定字线进行读取，并指定第一位线以向第二位线提供低于写入电压的读取电压，并且当字线的电压变为栅极阈值电压以上并且驱动电压和栅极阈值电压之和时，指定字线或更少。

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