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1. 发明申请

US20120108012A1 FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体和半导体器件制造方法
公开(公告)号：US20120108012A1
公开(公告)日：2012-05-03
申请号：US13382593
申请日：2010-05-31
申请人： Hiroyuki Yasuda , Takashi Hirano , Naoya Oda
发明人： Hiroyuki Yasuda , Takashi Hirano , Naoya Oda
IPC分类号： B32B3/00 , B32B7/02 , B32B3/02 , H01L21/78 , B32B5/00
CPC分类号： H01L24/27 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L21/6836 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2221/68359 , H01L2224/274 , H01L2224/27436 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01059 , H01L2924/01061 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , Y10T428/15 , Y10T428/24777 , Y10T428/2495 , Y10T428/24983 , Y10T428/265 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the semiconductor elements obtained by the dicing are picked up. This film for semiconductor is characterized in that an average thickness of the second adhesive layer is in the range of 20 to 100 μm. This makes it possible to control cutting lines formed during the dicing so as to locate distal ends thereof within the first adhesive layer easily and reliably and to prevent defects which would be generated when the cutting lines come down to the support film.
摘要翻译：半导体膜包括依次层叠在一起的支撑膜，第二粘合层，第一粘合层和接合层。这种半导体膜被配置为当半导体晶片被切割时，它支撑层叠在其接合层上的半导体晶片，并且当通过切割获得的半导体元件被拾取时，从第一粘合剂层选择性地剥离接合层。该半导体膜的特征在于，第二粘合层的平均厚度在20〜100μm的范围内。这使得可以控制在切割期间形成的切割线，以便容易且可靠地将其远端定位在第一粘合层内，并且防止当切割线下降到支撑膜时会产生的缺陷。

2. 发明申请

US20120052269A1 FILM FOR USE IN MANUFACTURING SEMICONDUCTOR DEVICES, METHOD FOR PRODUCING THE FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的膜，用于制造膜和半导体器件的方法
公开(公告)号：US20120052269A1
公开(公告)日：2012-03-01
申请号：US13240118
申请日：2011-09-22
申请人： Takashi Hirano , Akitsugu Sakaki , Naoya Oda
发明人： Takashi Hirano , Akitsugu Sakaki , Naoya Oda
IPC分类号： B32B7/10 , B32B38/10
CPC分类号： C09J9/02 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L21/67132 , H01L21/6835 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01059 , H01L2924/01072 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/181 , H01L2924/30105 , Y10T156/10 , Y10T156/1052 , Y10T428/24942 , H01L2924/00 , H01L2924/3512
摘要： A film for use in manufacturing semiconductor devices of the present invention includes a bonding layer having a first surface and a second surface, a first adhesive layer bonding to the second surface of the bonding layer and a second adhesive layer bonding to the first adhesive layer at a side opposite to the bonding layer wherein the second adhesive layer has an outer peripheral portion extending beyond an outer peripheral edge of the first adhesive layer. Further, the film is used in dicing a semiconductor wafer in a state that the semiconductor wafer is bonded to the first surface of the bonding layer while a wafer ring is bonded to the outer peripheral portion of the second adhesive layer wherein the bonding force A1 (cN/25 mm) of the first adhesive layer to the bonding layer is smaller than the bonding force A2 (cN/25 mm) of the second adhesive layer to the wafer ring.
摘要翻译：用于制造本发明的半导体器件的薄膜包括：具有第一表面和第二表面的接合层，接合到接合层的第二表面的第一粘合剂层和与第一粘合剂层接合的第二粘合剂层与所述接合层相对的一侧，其中所述第二粘合剂层具有延伸超过所述第一粘合剂层的外周边缘的外周部分。此外，在半导体晶片接合到接合层的第一表面的状态下，将薄膜用于切割半导体晶片，同时将晶片环接合到第二粘合层的外周部分，其中结合力A1（ cN / 25mm）小于第二粘合剂层与晶片环的接合力A2（cN / 25mm）。

3. 发明申请

US20100112272A1 FILM FOR USE IN MANUFACTURING SEMICONDUCTOR DEVICES, METHOD FOR PRODUCING THE FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的膜，用于制造膜和半导体器件的方法
公开(公告)号：US20100112272A1
公开(公告)日：2010-05-06
申请号：US12444023
申请日：2007-10-04
申请人： Takashi Hirano , Akitsugu Sasaki , Naoya Oda
发明人： Takashi Hirano , Akitsugu Sasaki , Naoya Oda
IPC分类号： B32B3/00 , B32B37/12
CPC分类号： C09J9/02 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L21/67132 , H01L21/6835 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01059 , H01L2924/01072 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/181 , H01L2924/30105 , Y10T156/10 , Y10T156/1052 , Y10T428/24942 , H01L2924/00 , H01L2924/3512
摘要： A film for use in manufacturing semiconductor devices of the present invention includes a bonding layer having a first surface and a second surface, a first adhesive layer bonding to the second surface of the bonding layer and a second adhesive layer bonding to the first adhesive layer at a side opposite to the bonding layer wherein the second adhesive layer has an outer peripheral portion extending beyond an outer peripheral edge of the first adhesive layer. Further, the film is used in dicing a semiconductor wafer in a state that the semiconductor wafer is bonded to the first surface of the bonding layer while a wafer ring is bonded to the outer peripheral portion of the second adhesive layer wherein the bonding force A1 (cN/25 mm) of the first adhesive layer to the bonding layer is smaller than the bonding force A2 (cN/25 mm) of the second adhesive layer to the wafer ring.
摘要翻译：用于制造本发明的半导体器件的薄膜包括：具有第一表面和第二表面的接合层，接合到接合层的第二表面的第一粘合剂层和与第一粘合剂层接合的第二粘合剂层与所述接合层相对的一侧，其中所述第二粘合剂层具有延伸超过所述第一粘合剂层的外周边缘的外周部分。此外，在半导体晶片接合到接合层的第一表面的状态下，将薄膜用于切割半导体晶片，同时将晶片环接合到第二粘合层的外周部分，其中结合力A1（ cN / 25mm）小于第二粘合剂层与晶片环的接合力A2（cN / 25mm）。

4. 发明申请

US20120100697A1 FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体和半导体器件制造方法
公开(公告)号：US20120100697A1
公开(公告)日：2012-04-26
申请号：US13382596
申请日：2010-05-31
申请人： Hiroyuki Yasuda , Takashi Hirano
发明人： Hiroyuki Yasuda , Takashi Hirano
IPC分类号： H01L21/78 , B32B7/02 , B32B3/10 , B32B7/12 , C09J7/02
CPC分类号： H01L24/29 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L21/67132 , H01L21/6836 , H01L24/27 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/68336 , H01L2221/68359 , H01L2224/27436 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01059 , H01L2924/01061 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , Y10T428/24942 , Y10T428/24983 , Y10T428/2809 , Y10T428/2848 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the diced semiconductor wafer (semiconductor element) is picked up. This film for semiconductor is characterized in that when the semiconductor wafer is laminated thereon and diced, and then adhesive strength of the obtained semiconductor element is measured, a ratio of “a (N/cm)” which is adhesive strength of an edge portion of the semiconductor element to “b (N/cm)” which is adhesive strength of a portion of the semiconductor element other than the edge portion thereof (that is, a/b) is in the range of 1 to 4. By optimizing the a/b, it is possible to reliably suppress defects such as breakage and crack which would be generated in the semiconductor element due to local impartation of a large load thereto when being picked up.
摘要翻译：半导体膜包括依次层叠在一起的支撑膜，第二粘合层，第一粘合层和接合层。这种半导体膜被配置为当半导体晶片被切割时，它支撑层叠在其接合层上的半导体晶片，并且当切割的半导体晶片（半导体元件）被拾取时，从第一粘合剂层选择性地剥离接合层。该半导体用薄膜的特征在于，在将半导体晶片层叠并切割后，测定所得到的半导体元件的粘合强度时，作为边界部分的粘合强度的“a（N / cm）” 作为半导体元件的除了其边缘部分以外的部分的粘合强度（即a / b）的“b（N / cm）”的半导体元件在1〜4的范围内。通过优化a / b时，可以可靠地抑制当拾取时由于局部赋予其大的载荷而在半导体元件中产生的诸如断裂和裂纹的缺陷。

5. 发明申请

US20120115280A1 FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体和半导体器件制造方法
公开(公告)号：US20120115280A1
公开(公告)日：2012-05-10
申请号：US13382654
申请日：2010-05-31
申请人： Hiroyuki Yasuda , Takashi Hirano
发明人： Hiroyuki Yasuda , Takashi Hirano
IPC分类号： H01L21/56 , B32B3/02 , B32B7/02 , B32B7/12 , C09J7/02
CPC分类号： C09J163/00 , C08F218/08 , C08F2220/1825 , C08G18/6225 , C08G18/7621 , C08L61/04 , C08L63/00 , C08L2203/206 , C08L2666/14 , C09J7/20 , C09J133/08 , C09J175/14 , C09J2201/36 , C09J2201/606 , C09J2201/61 , C09J2203/326 , C09J2433/00 , C09J2463/00 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/92247 , H01L2924/10253 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , Y10T428/24942 , Y10T428/24983 , Y10T428/2848 , C08F2220/1858 , C08F2222/1053 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when a chip is picked up. This film for semiconductor is characterized in that in the case where peel strength at 23° C. of the chip is defined as “F23 (cN/25 mm)” and peel strength at 60° C. of the chip is defined as “F60 (cN/25 mm)”, F23 is in the range of 10 to 80 and F60/F23 is in the range of 0.3 to 5.5. This makes it possible to improve a pickup property of the chip, to thereby prevent generation of defects in a semiconductor element.
摘要翻译：半导体膜包括依次层叠在一起的支撑膜，第二粘合层，第一粘合层和接合层。这种半导体膜被配置为当半导体晶片被切割时，其支撑层叠在其接合层上的半导体晶片，并且当拾取芯片时，从第一粘合剂层选择性地剥离接合层。该半导体膜的特征在于，芯片的23℃剥离强度定义为“F23（cN / 25mm）”，将芯片的60℃剥离强度定义为“F60 （cN / 25mm）“，F23为10〜80，F60 / F23为0.3〜5.5的范围。这使得可以提高芯片的拾取特性，从而防止半导体元件中的缺陷的产生。

6. 发明授权

US08759957B2 Film for use in manufacturing semiconductor device, method for producing semiconductor device and semiconductor device 有权
标题翻译：用于制造半导体器件的膜，用于制造半导体器件的方法和半导体器件
公开(公告)号：US08759957B2
公开(公告)日：2014-06-24
申请号：US12866108
申请日：2009-02-06
申请人： Takashi Hirano
发明人： Takashi Hirano
IPC分类号： H01L23/02
CPC分类号： H01L23/295 , C09J7/22 , C09J7/38 , C09J2203/326 , H01L21/6836 , H01L24/16 , H01L24/29 , H01L25/50 , H01L2221/68327 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/27436 , H01L2224/29111 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/83191 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01058 , H01L2924/01059 , H01L2924/01075 , H01L2924/01077 , H01L2924/01082 , H01L2924/01087 , H01L2924/0132 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/30105 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A film for use in manufacturing a semiconductor device having at least one semiconductor element of the present invention is characterized by comprising: a base sheet having one surface; and a bonding layer provided on the one surface of the base sheet, the bonding layer being adapted to be bonded to the semiconductor element in the semiconductor device, the bonding layer being formed of a resin composition comprising a crosslinkable resin and a compound having flux activity. Further, it is preferred that in the film of the present invention, the semiconductor element is of a flip-chip type and has a functional surface, and the bonding layer is adapted to be bonded to the functional surface of the semiconductor element.
摘要翻译：用于制造具有本发明的至少一个半导体元件的半导体器件的薄膜的特征在于包括：具有一个表面的基片; 以及设置在所述基片的一个表面上的接合层，所述接合层适于与所述半导体器件中的所述半导体元件接合，所述接合层由包含可交联树脂和具有助焊剂活性的化合物的树脂组合物形成。此外，优选在本发明的膜中，半导体元件为倒装型，具有功能面，并且接合层适于与半导体元件的功能面接合。

7. 发明授权

US08530119B2 Positive photosensitive resin composition, cured film, protective film, interlayer insulating film, and semiconductor device and display element using the same 有权
标题翻译：正型感光性树脂组合物，固化膜，保护膜，层间绝缘膜，以及使用其的显示元件
公开(公告)号：US08530119B2
公开(公告)日：2013-09-10
申请号：US13321180
申请日：2009-05-20
申请人： Takashi Hirano , Toshio Banba , Shusaku Okamyo , Hiroaki Makabe
发明人： Takashi Hirano , Toshio Banba , Shusaku Okamyo , Hiroaki Makabe
IPC分类号： G03F7/023
CPC分类号： G03F7/0233 , G03F7/0226
摘要： A positive photosensitive resin composition includes (A) a polybenzoxazole precursor resin, (B) a photosensitive diazoquinone compound, (C) a hindered phenol antioxidant shown by the following general formula (1), and (D) a phenol compound shown by the following general formula (2). Formula (1) is: wherein R1 represents a hydrogen atom or an organic group having 1 to 4 carbon atoms, a is an integer from 1 to 3, and b is an integer from 1 to 3. Formula (2) is: wherein R2 represents a methylene group or a single bond, c is an integer from 1 to 3, and d is an integer from 1 to 3. A protective film, an interlayer insulating film, and a semiconductor device and a display element using the same are also disclosed.
摘要翻译：正型感光性树脂组合物包含（A）聚苯并恶唑前体树脂，（B）感光性重氮醌化合物，（C）下述通式（1）所示的受阻酚抗氧化剂，（D）下述通式通式（2）。式（1）为：式中，R 1表示氢原子或碳原子数1〜4的有机基团，a为1〜3的整数，b为1〜3的整数。式（2）表示亚甲基或单键，c为1〜3的整数，d为1〜3的整数。保护膜，层间绝缘膜及半导体装置以及使用该键的显示元件也是披露

8. 发明申请

US20130070888A1 METHOD OF REDUCING CORROSION OF NUCLEAR REACTOR STRUCTURAL MATERIAL 有权
标题翻译：减少核反应堆结构材料腐蚀的方法
公开(公告)号：US20130070888A1
公开(公告)日：2013-03-21
申请号：US13619377
申请日：2012-09-14
申请人： Seiji YAMAMOTO , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Tetsuo Oosato , Masato Okamura , Junichi Takagi , Kenji Yamazaki , Shunichi Suzuki , Kenro Takamori , Mitsuru Sambongi , Takeshi Shibano , Takashi Hirano , Yuichi Fukaya
发明人： Seiji YAMAMOTO , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Tetsuo Oosato , Masato Okamura , Junichi Takagi , Kenji Yamazaki , Shunichi Suzuki , Kenro Takamori , Mitsuru Sambongi , Takeshi Shibano , Takashi Hirano , Yuichi Fukaya
IPC分类号： G21C9/00
CPC分类号： G21C9/00 , G21C3/324 , G21Y2002/103 , Y02E30/40
摘要： In a method of reducing corrosion of a material constituting a nuclear reactor structure, an electrochemical corrosion potential is controlled by injecting a solution or a suspension containing a substance generating an excitation current by an action of at least one of radiation, light, and heat existing in a nuclear reactor, or a metal or a metallic compound forming the substance generating the excitation current under the condition in the nuclear reactor to allow the substance generating the excitation current to adhere to the surface of the nuclear reactor structural material, and by injecting hydrogen in cooling water of the nuclear reactor while controlling the hydrogen concentration in a feed water.
摘要翻译：在减少构成核反应堆结构的材料的腐蚀的方法中，电化学腐蚀电位通过注入含有产生激发电流的物质的溶液或悬浮液来控制，该溶液或悬浮液通过存在辐射，光和热中的至少一种的作用或在核反应堆中形成产生激励电流的物质的金属或金属化合物，以使产生激发电流的物质附着到核反应堆结构材料的表面，并通过注入氢同时控制供水中的氢浓度。

9. 发明授权

US08209529B2 Authentication system, network line concentrator, authentication method and authentication program 失效
标题翻译：认证系统，网络集线器，认证方式和认证方案
公开(公告)号：US08209529B2
公开(公告)日：2012-06-26
申请号：US11179602
申请日：2005-07-13
申请人： Takashi Hirano , Atsushi Nunome , Hiroaki Hirata , Kiyoshi Shibayama
发明人： Takashi Hirano , Atsushi Nunome , Hiroaki Hirata , Kiyoshi Shibayama
IPC分类号： H04L29/06
CPC分类号： H04L63/08
摘要： A DHCP server 8 dispenses an IP address in response to a request from a terminal equipment 1. An authentication server 3 receives an authentication frame transmitted from the terminal equipment 1 using the dispensed IP address as a sender address and authenticates the terminal equipment 1. Upon completion of authentication, the authentication server 3 informs a registration information database 22 of an authentication hub 2 of communication permission for the terminal equipment 1. In the authentication hub 2, a frame receiving circuit 21 receives a transmission frame transmitted from the terminal equipment 1. The authentication hub 2 refers to the registration information database 22 on the basis of sender information of the transmission frame, determines transmission, rewriting-and-transmission, or discarding for the frame, and sends the transmission frame to a transmission buffer 23 if transmission or rewriting-and-transmission is permitted for the frame.
摘要翻译： DHCP服务器8响应于来自终端设备1的请求来分配IP地址。认证服务器3使用分配的IP地址作为发送者地址接收从终端设备1发送的认证帧，并对终端设备1进行认证。认证服务器3向认证中心2的登记信息数据库22通知终端设备1的通信许可。在认证集线器2中，帧接收电路21接收从终端设备1发送的传输帧。认证集线器2基于发送帧的发送者信息来参考注册信息数据库22，确定发送，重写和发送，或丢弃该帧，并且如果发送或发送，则将发送帧发送到发送缓冲器23 框架允许重写传输。

10. 发明申请

US20120104942A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE 审中-公开
标题翻译：用于制造显示装置的显示装置和方法
公开(公告)号：US20120104942A1
公开(公告)日：2012-05-03
申请号：US13347884
申请日：2012-01-11
申请人： Tetsuo Nakayama , Takanori Shibasaki , Nobuo Ozawa , Eisuke Matsuda , Takashi Hirano , Tadashi Ishibashi , Yoichi Tomo , Keisuke Matsuo
发明人： Tetsuo Nakayama , Takanori Shibasaki , Nobuo Ozawa , Eisuke Matsuda , Takashi Hirano , Tadashi Ishibashi , Yoichi Tomo , Keisuke Matsuo
IPC分类号： H01J1/62
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L51/0013 , H01L51/5228 , H01L51/5234 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： A display device and a method for manufacturing the display device are provided. The display device includes an organic layer on an auxiliary wiring is removed with high precision by one operation and, thereby, the yield and the productivity are improved. A lower electrode is formed by patterning in each pixel on a substrate. An auxiliary wiring including a light absorption layer is formed between individual pixels. An organic layer is formed on the substrate while covering the lower electrodes. Laser irradiation is conducted from the organic layer side, the laser light is converted to heat in the light absorption layer exposed at a portion under the organic layer, and the organic layer portion above the light absorption layer is removed selectively. An upper electrode is formed on the organic layer and is connected to the light absorption layer portion of the auxiliary wiring.
摘要翻译：提供一种显示装置及其制造方法。显示装置包括通过一次操作以高精度去除辅助布线上的有机层，从而提高了产量和生产率。通过在基板上的每个像素中图案化形成下电极。在各个像素之间形成包括光吸收层的辅助布线。在覆盖下电极的同时，在基板上形成有机层。从有机层侧进行激光照射，在有机层下方露出的光吸收层中将激光转换成热，并且选择性地除去光吸收层上方的有机层部。上电极形成在有机层上，与辅助布线的光吸收层部分相连。

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