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1. 发明授权

US5065441A Image processing apparatus 失效
公开(公告)号：US5065441A
公开(公告)日：1991-11-12
申请号：US544663
申请日：1990-06-27
申请人： Hiroyuki Yamamoto , Toshihiro Motoi , Toshiharu Nishimura , Tadao Kishimoto
发明人： Hiroyuki Yamamoto , Toshihiro Motoi , Toshiharu Nishimura , Tadao Kishimoto
IPC分类号： H04N1/40 , H04N1/405
CPC分类号： H04N1/4056
摘要： An image processing apparatus for processing an image signal, comprising a clock for generating a periodical clock signal, a pattern signal generator for generating 2N (where N is a positive integer) pattern signals, each of the pattern signals having a constant wave-form, a wave length of 2N times longer than that of the periodical clock signal and a phase difference 360/2N relative to another one of the pattern signals, a comparator for comparing the pattern signals with the image signal and for generating 2N of comparison signals, and a composition generator for combining said 2N comparison signals and for generating a pulse-duration modulated signal from the combined 2N comparison signals.

2. 发明授权

US08080109B2 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08080109B2
公开(公告)日：2011-12-20
申请号：US12149537
申请日：2008-05-02
申请人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
IPC分类号： B08B9/08
CPC分类号： B08B5/00 , C23C16/345 , C23C16/4405 , H01L21/0217 , H01L21/0228 , H01L21/3185 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.
摘要翻译：使用半导体工艺的成膜装置的方法包括设定成膜装置的反应室不含有产品目标基板的空转状态，然后进行除去存在于内部表面的污染物的清洗处理反应室通过使自由基作用在反应室的内表面上。通过激活含有氧和氢作为元素的吹扫工艺气体来产生自由基。

3. 发明申请

US20080282976A1 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20080282976A1
公开(公告)日：2008-11-20
申请号：US12149537
申请日：2008-05-02
申请人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
IPC分类号： C23C16/56 , B08B5/00 , H01L21/469 , B08B9/00
CPC分类号： B08B5/00 , C23C16/345 , C23C16/4405 , H01L21/0217 , H01L21/0228 , H01L21/3185 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.
摘要翻译：使用半导体工艺的成膜装置的方法包括设定成膜装置的反应室不含有产品目标基板的空转状态，然后进行除去存在于内部表面的污染物的清洗处理反应室通过使自由基作用在反应室的内表面上。通过激活含有氧和氢作为元素的吹扫工艺气体来产生自由基。

4. 发明授权

US4774547A Apparatus for forming images 失效
标题翻译：用于形成图像的装置
公开(公告)号：US4774547A
公开(公告)日：1988-09-27
申请号：US140912
申请日：1987-12-29
申请人： Shunji Uchida , Masaki Kakutani , Toshiharu Nishimura
发明人： Shunji Uchida , Masaki Kakutani , Toshiharu Nishimura
IPC分类号： G03D3/08 , G03B27/32 , G03G15/08 , G03B29/00
CPC分类号： G03B27/32
摘要： An image forming apparatus is disclosed, in which silver halide color photographic light-sensitive materials are used. The apparatus has a scanning exposure system and a processing system for the photographic materials. Two types of photographic materials, reflective type and transparent type, can be used interchangeably. Conditions of the exposure and the processing are automatically changed according to the types of the photographic materials.
摘要翻译：公开了一种图像形成装置，其中使用卤化银彩色照相感光材料。该装置具有用于照相材料的扫描曝光系统和处理系统。两种类型的照相材料，反射型和透明型，可以互换使用。曝光和处理的条件根据照相材料的类型自动改变。

5. 发明申请

US20090124077A1 Method for forming poly-silicon film 有权
标题翻译：多晶硅膜的形成方法
公开(公告)号：US20090124077A1
公开(公告)日：2009-05-14
申请号：US12285574
申请日：2008-10-08
申请人： Mitsuhiro Okada , Takahiro Miyahara , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Takahiro Miyahara , Toshiharu Nishimura
IPC分类号： H01L21/443
CPC分类号： H01L21/28035 , C23C16/24 , C23C16/56 , H01L21/0257 , H01L21/02573 , H01L21/0262 , H01L21/02667
摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.
摘要翻译：用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在目标基板。

6. 发明申请

US20080132079A1 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20080132079A1
公开(公告)日：2008-06-05
申请号：US11905628
申请日：2007-10-02
申请人： Mitsuhiro Okada , Satoshi Mizunaga , Yamato Tonegawa , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Satoshi Mizunaga , Yamato Tonegawa , Toshiharu Nishimura
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605 , Y10S134/902
摘要： A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.
摘要翻译：使用半导体工艺的成膜装置的方法包括：第一清洗处理，其将第一清洗气体从成膜装置的反应室的内表面除去副产物膜，同时将第一清洗气体供给到反应室，并将反应室的内部设置在第一温度和第一压力下以启动第一清洁气体。该方法还包括第二清洁过程，然后在将第二清洁气体供应到反应室中时，由第二清洁气体从反应室的内表面除去污染物，并将反应室的内部设定在第二温度以及第二压力来启动第二清洁气体。第二清洗气体包括含氯气体。

7. 发明授权

US5637153A Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus 失效
标题翻译：热处理设备中反应管和排气管道系统的清洗方法
公开(公告)号：US5637153A
公开(公告)日：1997-06-10
申请号：US429159
申请日：1995-04-26
申请人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
发明人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
IPC分类号： C23C16/24 , C23C16/40 , C23C16/44 , B08B7/00 , B08B9/00
CPC分类号： C23C16/24 , C23C16/405 , C23C16/4405 , C23C16/4412
摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.
摘要翻译：在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

8. 发明授权

US08183158B2 Semiconductor processing apparatus and method for using same 有权
标题翻译：半导体处理装置及其使用方法
公开(公告)号：US08183158B2
公开(公告)日：2012-05-22
申请号：US11907820
申请日：2007-10-17
申请人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
发明人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
IPC分类号： H01L21/311
CPC分类号： C23C16/4405 , H01L21/67109
摘要： A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.
摘要翻译：使用半导体处理装置的方法包括将氧化气体和还原气体供给到不在其中容纳产品目标基板的处理装置的处理容器中; 使得氧化气体和还原气体在激活处理容器内的氧化气体和还原气体的第一气氛中相互反应，从而产生自由基; 以及通过使用自由基从处理容器的内表面除去污染物。

9. 发明授权

US07691445B2 Film formation apparatus and method of using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US07691445B2
公开(公告)日：2010-04-06
申请号：US11562198
申请日：2006-11-21
申请人： Mitsuhiro Okada , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Toshiharu Nishimura
IPC分类号： B05D3/04
CPC分类号： H01L21/0217 , C23C16/4405 , H01L21/0214 , H01L21/02164 , H01L21/02271 , H01L21/3145 , H01L21/3185
摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine gas and hydrogen gas.
摘要翻译：使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面平坦化气体。内表面包含石英或碳化硅的主要成分。在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。平坦化气体含有氟气和氢气。

10. 发明申请

US20080093023A1 Semiconductor processing apparatus and method for using same 有权
标题翻译：半导体处理装置及其使用方法
公开(公告)号：US20080093023A1
公开(公告)日：2008-04-24
申请号：US11907820
申请日：2007-10-17
申请人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
发明人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
IPC分类号： H01L21/00 , B08B7/00
CPC分类号： C23C16/4405 , H01L21/67109
摘要： A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.
摘要翻译：使用半导体处理装置的方法包括将氧化气体和还原气体供给到不在其中容纳产品目标基板的处理装置的处理容器中; 使得氧化气体和还原气体在激活处理容器内的氧化气体和还原气体的第一气氛中相互反应，从而产生自由基; 以及通过使用自由基从处理容器的内表面除去污染物。

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