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1. 发明授权

US08808452B2 Silicon film formation apparatus and method for using same 有权
标题翻译：硅成膜装置及其使用方法
公开(公告)号：US08808452B2
公开(公告)日：2014-08-19
申请号：US12707299
申请日：2010-02-17
申请人： Naotaka Noro , Takahiro Miyahara
发明人： Naotaka Noro , Takahiro Miyahara
IPC分类号： C30B25/02 , C30B25/20 , C30B29/06 , C30B25/12 , C30B25/08
CPC分类号： C30B25/02 , C23C16/0236 , C23C16/4404 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： A method for using a silicon film formation apparatus includes performing a pre-coating process to cover a reaction tube with a silicon coating film, an etching process to etch natural oxide films on product target objects, a silicon film formation process to form a silicon product film on the product target objects, and a cleaning process to etch silicon films on the reaction tube, in this order. The pre-coating process includes supplying a silicon source gas into the reaction tube from a first supply port having a lowermost opening at a first position below the process field, while exhausting gas upward from inside the reaction tube. The etching process includes supplying an etching gas into the reaction tube from a second supply port having a lowermost opening between the process field and the first position, while exhausting gas upward from inside the reaction tube by the exhaust system.
摘要翻译：使用硅膜形成装置的方法包括执行用硅涂膜覆盖反应管的预涂工艺，蚀刻产物目标物体上的天然氧化物膜的蚀刻工艺，形成硅产物的硅膜形成工艺产品目标物体上的膜，以及依次对反应管上的硅膜进行蚀刻的清洗工艺。预涂工艺包括将硅源气体从处于工艺场下方的第一位置处具有最低开口的第一供应口供应到反应管中，同时从反应管内部向上排出气体。蚀刻工艺包括从处理区域和第一位置之间具有最低开口的第二供应端口向反应管供应蚀刻气体，同时通过排气系统从反应管内部向上排出气体。

2. 发明申请

US20130084693A1 THIN FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20130084693A1
公开(公告)日：2013-04-04
申请号：US13628268
申请日：2012-09-27
申请人： Akinobu KAKIMOTO , Atsushi ENDO , Takahiro MIYAHARA , Shigeru NAKAJIMA , Satoshi TAKAGI , Kazumasa IGARASHI
发明人： Akinobu KAKIMOTO , Atsushi ENDO , Takahiro MIYAHARA , Shigeru NAKAJIMA , Satoshi TAKAGI , Kazumasa IGARASHI
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： C23C16/24 , C23C16/0272 , C23C16/045 , C23C16/45523 , C30B25/02 , C30B29/06 , H01L21/02167 , H01L21/02271 , H01L21/02312 , H01L21/67109
摘要： A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.
摘要翻译：在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜的薄膜形成方法包括：通过提供种子进行形成种子膜的第一步骤将包含氨基硅烷类气体和高级硅烷中的至少任一种的膜原料气体加入到处理容器内; 以及通过向所述处理容器供给硅烷系气体和含杂质气体，进行非晶态的含杂质的硅膜的第二工序。

3. 发明授权

US07923357B2 Method for forming poly-silicon film 有权
标题翻译：多晶硅膜的形成方法
公开(公告)号：US07923357B2
公开(公告)日：2011-04-12
申请号：US12285574
申请日：2008-10-08
申请人： Mitsuhiro Okada , Takahiro Miyahara , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Takahiro Miyahara , Toshiharu Nishimura
IPC分类号： H01L21/20 , H01L21/04
CPC分类号： H01L21/28035 , C23C16/24 , C23C16/56 , H01L21/0257 , H01L21/02573 , H01L21/0262 , H01L21/02667
摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.
摘要翻译：用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在目标基板。

4. 发明申请

US20090124077A1 Method for forming poly-silicon film 有权
标题翻译：多晶硅膜的形成方法
公开(公告)号：US20090124077A1
公开(公告)日：2009-05-14
申请号：US12285574
申请日：2008-10-08
申请人： Mitsuhiro Okada , Takahiro Miyahara , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Takahiro Miyahara , Toshiharu Nishimura
IPC分类号： H01L21/443
CPC分类号： H01L21/28035 , C23C16/24 , C23C16/56 , H01L21/0257 , H01L21/02573 , H01L21/0262 , H01L21/02667
摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.
摘要翻译：用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在目标基板。

5. 发明申请

US20100212581A1 SILICON FILM FORMATION APPARATUS AND METHOD FOR USING SAME 有权
标题翻译：硅胶膜形成装置及其使用方法
公开(公告)号：US20100212581A1
公开(公告)日：2010-08-26
申请号：US12707299
申请日：2010-02-17
申请人： Naotaka NORO , Takahiro Miyahara
发明人： Naotaka NORO , Takahiro Miyahara
IPC分类号： C30B25/02 , C30B25/20
CPC分类号： C30B25/02 , C23C16/0236 , C23C16/4404 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： A method for using a silicon film formation apparatus includes performing a pre-coating process to cover a reaction tube with a silicon coating film, an etching process to etch natural oxide films on product target objects, a silicon film formation process to form a silicon product film on the product target objects, and a cleaning process to etch silicon films on the reaction tube, in this order. The pre-coating process includes supplying a silicon source gas into the reaction tube from a first supply port having a lowermost opening at a first position below the process field, while exhausting gas upward from inside the reaction tube. The etching process includes supplying an etching gas into the reaction tube from a second supply port having a lowermost opening between the process field and the first position, while exhausting gas upward from inside the reaction tube by the exhaust system.
摘要翻译：使用硅膜形成装置的方法包括执行用硅涂膜覆盖反应管的预涂工艺，蚀刻产物目标物体上的天然氧化物膜的蚀刻工艺，形成硅产物的硅膜形成工艺产品目标物体上的膜，以及依次对反应管上的硅膜进行蚀刻的清洗工艺。预涂工艺包括将硅源气体从处于工艺场下方的第一位置处具有最低开口的第一供应口供应到反应管中，同时从反应管内部向上排出气体。蚀刻工艺包括从处理区域和第一位置之间具有最低开口的第二供应端口向反应管供应蚀刻气体，同时通过排气系统从反应管内部向上排出气体。

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