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    • 2. 发明授权
    • Atomic layer deposition apparatus and atomic layer deposition method
    • 原子层沉积装置和原子层沉积法
    • US08607733B2
    • 2013-12-17
    • US12865763
    • 2009-02-17
    • Hiroyuki Tachibana
    • Hiroyuki Tachibana
    • C23C16/505C23C16/50C23C16/44C23C16/00
    • H05H1/46C23C16/452C23C16/45536C23C16/45544H01J37/32009H01L21/3141
    • An atomic layer deposition apparatus includes: a first chamber which is surrounded by walls including a supply hole for the reactive gas formed thereon; a second chamber which is surrounded by walls including a supply hole for a source gas formed thereon; an antenna array which is provided in the first chamber, the antenna array having a plurality of rod-shaped antenna elements provided in parallel respectively to produce the plasma using the reactive gas; a substrate stage which is provided in the second chamber, the substrate being placed on the substrate stage; and a connecting member which connects the first chamber and the second chamber to supply gas containing reactive gas radical from the first chamber to the second chamber, the reactive gas radical being produced using the antenna array.
    • 原子层沉积设备包括:由壁围绕的第一室,包括在其上形成的反应气体的供应孔; 由壁围绕的第二室,包括形成在其上的源气体的供给孔; 设置在第一室中的天线阵列,天线阵列具有分别平行设置的多个棒状天线元件,以使用反应气体产生等离子体; 设置在所述第二室中的衬底台,所述衬底被放置在所述衬底台上; 以及连接构件,其连接所述第一室和所述第二室以将包含反应性气体自由基的气体从所述第一室供应到所述第二室,所述反应性气体自由基使用所述天线阵列产生。