会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Program, information storage medium and game system
    • 程序,信息存储介质和游戏系统
    • US07582015B2
    • 2009-09-01
    • US10936579
    • 2004-09-09
    • Hiroyuki OnodaHiroumi EndoHiroshi IgarashiJunji TakamotoTakeshi Nagareda
    • Hiroyuki OnodaHiroumi EndoHiroshi IgarashiJunji TakamotoTakeshi Nagareda
    • A63F13/00
    • A63F13/5375A63F13/10A63F13/245A63F13/44A63F13/814
    • A game system includes: a direction mark storage section which stores image data of a direction mark which directs an operation of a player; a display control section which performs display control of a plurality of display objects including the direction mark; a timing acquisition section which acquires an operation timing; and an evaluation section which compares the acquired operation timing with a reference timing and evaluates the operation of the player. The display control section performs control of displaying the direction mark which directs the player to operate a plurality of operation regions by one mark. When the player operates the plurality of the operation regions of the operation section, the evaluation section evaluates the operation of the player by comparing the operation timing for the plurality of operation regions and the reference timing.
    • 游戏系统包括:方向标记存储部,其存储有指示玩家的操作的方向标记的图像数据; 显示控制部,其对包括所述方向标记的多个显示对象进行显示控制; 定时获取部,其获取操作定时; 以及评估部分,其将所获取的操作时序与参考时间进行比较,并评估玩家的操作。 显示控制部执行显示指示玩家将多个操作区域操作一个标记的方向标记的控制。 当播放器操作操作部分的多个操作区域时,评估部分通过比较多个操作区域的操作定时和参考定时来评估玩家的操作。
    • 5. 发明授权
    • Game system, program, and information storage medium
    • 游戏系统,程序和信息存储介质
    • US07722450B2
    • 2010-05-25
    • US10936589
    • 2004-09-09
    • Hiroyuki OnodaHiroumi EndoHiroshi IgarashiJunji TakamotoTakeshi Nagareda
    • Hiroyuki OnodaHiroumi EndoHiroshi IgarashiJunji TakamotoTakeshi Nagareda
    • A63F9/22
    • A63F13/44A63F13/10A63F13/245A63F13/5375A63F13/814A63F2300/303A63F2300/305A63F2300/6036A63F2300/638A63F2300/8047
    • A game system including: a music reproduction section which reproduces given music data stored in a storage section; a display control section which performs display control of changing a relative positional relationship among a direction mark which directs an operation to be performed by a player using an operation section, a special direction mark for the second game and a reference mark for timing judgment of the operation in association with a reproduction state of the music data to cause the direction mark and the reference mark to come closer; a timing acquisition section which acquires operation timing when the player operates the operation section for the direction mark; and a game calculation section which performs calculation processing of a first game of comparing the acquired operation timing with timing criteria and calculation processing of a second game differing from the first game based on operation information of the operation section for the special direction mark.
    • 一种游戏系统,包括:音乐再现部,其再现存储在存储部中的给定音乐数据; 执行显示控制的显示控制,所述显示控制部分执行改变指示使用操作部分的玩家执行的操作的方向标记之间的相对位置关系的显示控制,以及用于所述第二游戏的定时判断的参考标记 与音乐数据的再现状态相关联地进行操作以使得方向标记和参考标记更接近; 定时获取部分,当玩家操作方向标记的操作部分时,获取操作定时; 以及游戏计算部,其基于所述特殊方向标记的操作部的操作信息,对所获取的操作定时与所述第一游戏不同的第二游戏的定时标准和计算处理进行比较的第一游戏的计算处理。
    • 9. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US07910445B2
    • 2011-03-22
    • US12252152
    • 2008-10-15
    • Hiroyuki Onoda
    • Hiroyuki Onoda
    • H01L21/336
    • H01L29/6659H01L29/165H01L29/6653H01L29/66636H01L29/7833H01L29/7848
    • A method of fabricating a semiconductor device according to one embodiment of the invention includes: forming a gate electrode on a semiconductor substrate through a gate insulating film; forming offset spacers on side surfaces of the gate electrode, respectively; etching the semiconductor substrate with a channel region below the offset spacers and the gate electrode being left by using the offset spacers as a mask; forming a first epitaxial layer made of a crystal having a lattice constant different from that of a crystal constituting the semiconductor substrate on the semiconductor substrate thus etched; etching at least a portion of the first epitaxial layer adjacent to the channel region to a predetermined depth from a surface of the first epitaxial layer toward the semiconductor substrate side; and forming a second epitaxial layer containing therein a conductivity type impurity on the first epitaxial layer thus etched.
    • 根据本发明的一个实施例的制造半导体器件的方法包括:通过栅极绝缘膜在半导体衬底上形成栅电极; 分别在栅电极的侧表面上形成偏置间隔物; 用偏移间隔物下方的沟道区蚀刻半导体衬底,并通过使用偏移间隔物作为掩模留下栅电极; 在由此蚀刻的半导体衬底上形成由与构成半导体衬底的晶体的晶格常数不同的晶体构成的第一外延层; 将与沟道区相邻的第一外延层的至少一部分蚀刻到从第一外延层的表面朝向半导体衬底侧的预定深度; 以及在所述第一外延层上形成包含导电型杂质的第二外延层。
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    • 半导体器件及其制造方法
    • US20120228628A1
    • 2012-09-13
    • US13041732
    • 2011-03-07
    • Hiroyuki OnodaHiroyuki Oota
    • Hiroyuki OnodaHiroyuki Oota
    • H01L29/12H01L21/336
    • H01L29/66636H01L29/165H01L29/6659H01L29/7834
    • A semiconductor device and methods of fabricating semiconductor devices are provided. A method involves forming a semiconductor substrate on a source region and a drain region, the semiconductor substrate comprises a first crystal. The method also involves forming an epitaxial layer of a second crystal on the semiconductor substrate. The first crystal has a first lattice constant and the second crystal has a second lattice constant. The first epitaxial layer does not touch a spacer or a gate electrode. Forming the epitaxial layer can comprise forming a first epitaxial layer and a second epitaxial layer, wherein the first epitaxial layer has a conductivity type impurity that is less than the conductivity type impurity of the second epitaxial layer.
    • 提供半导体器件和制造半导体器件的方法。 一种方法包括在源区和漏区上形成半导体衬底,所述半导体衬底包括第一晶体。 该方法还涉及在半导体衬底上形成第二晶体的外延层。 第一晶体具有第一晶格常数,第二晶体具有第二晶格常数。 第一外延层不接触间隔物或栅电极。 形成外延层可以包括形成第一外延层和第二外延层,其中第一外延层具有小于第二外延层的导电类型杂质的导电型杂质。