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1. 发明申请

US20120301732A1 AL ALLOY FILM FOR USE IN DISPLAY DEVICE 审中-公开
标题翻译： AL合金膜用于显示器件
公开(公告)号：US20120301732A1
公开(公告)日：2012-11-29
申请号：US13576053
申请日：2011-02-16
申请人： Hiroyuki Okuno , Toshihiro Kugimiya , Hiroshi Goto
发明人： Hiroyuki Okuno , Toshihiro Kugimiya , Hiroshi Goto
IPC分类号： C22C21/00 , B32B15/04 , C23C14/14
CPC分类号： C23C14/165 , H01L27/124 , H01L29/458 , H01L29/4908 , Y10T428/31678
摘要： Disclosed is an Al alloy film for use in a display device, which does not undergo the formation of hillocks even when exposed to high temperatures of about 450° C. to 600° C., and has excellent high-temperature heat resistance, low electrical resistance (wiring resistance) and excellent corrosion resistance under alkaline environments. Specifically disclosed is an Al alloy film for use in a display device, which comprises at least one element selected from a group X consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf and Ti and at least one rare earth element, and which meets the following requirement (1) when heated at 450° C. to 600° C. (1) Precipitates each having an equivalent circle diameter of 20 nm or more are present at a density of 500,000 particles/mm2 or more in a first precipitation product containing at least one element selected from Al and the elements included in the group X and at least one rare earth element.
摘要翻译：公开了一种用于显示装置的Al合金膜，其即使在暴露于约450℃至600℃的高温下也不会形成小丘，并且具有优异的高温耐热性，低电电阻（接线电阻）和在碱性环境下优异的耐腐蚀性。具体公开了一种用于显示装置的Al合金膜，其包括从由Ta，Nb，Re，Zr，W，Mo，V，Hf和Ti组成的组X中选择的至少一种元素和至少一种稀土元素，并且在450℃〜600℃下加热时满足以下要求（1）。（1）以50万个/ mm 2以上的密度存在各自具有20nm以上的当量圆直径的析出物在含有选自Al中的至少一种元素和包含在基团X中的元素和至少一种稀土元素的第一沉淀产物中。

2. 发明授权

US08743307B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08743307B2
公开(公告)日：2014-06-03
申请号：US13490978
申请日：2012-06-07
申请人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
发明人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
IPC分类号： G02F1/136
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.
摘要翻译：显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

3. 发明授权

US08482189B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08482189B2
公开(公告)日：2013-07-09
申请号：US13144716
申请日：2010-01-15
申请人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
发明人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
IPC分类号： H01L51/00
CPC分类号： H01L23/53238 , B32B15/01 , C22C9/00 , C23C14/025 , C23C14/14 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate.
摘要翻译：显示装置设置有对透明基板具有高粘附性和低电阻率的Cu合金膜。用于显示装置的Cu合金膜直接与透明基板接触，并且Cu合金膜具有多层结构，其包括由总共为2-20atm的Cu合金构成的第一层（Y）选自由Zn，Ni，Ti，Al，Mg，Ca，W，Nb和Mn组成的组中的至少一种元素的％，以及由纯Cu或基本上由Cu合金构成的第二层（X）以Cu为主成分，电阻率比第一层（Y）低。第一层（Y）与透明基板接触。

4. 发明申请

US20110273075A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20110273075A1
公开(公告)日：2011-11-10
申请号：US13144716
申请日：2010-01-15
申请人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
发明人： Hiroshi Goto , Aya Miki , Katsufumi Tomihisa , Mototaka Ochi , Takashi Onishi , Toshihiro Kugimiya
IPC分类号： H01J1/48
CPC分类号： H01L23/53238 , B32B15/01 , C22C9/00 , C23C14/025 , C23C14/14 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate.
摘要翻译：显示装置设置有对透明基板具有高粘附性和低电阻率的Cu合金膜。用于显示装置的Cu合金膜直接与透明基板接触，并且Cu合金膜具有多层结构，其包括由总共为2-20atm的Cu合金构成的第一层（Y）选自由Zn，Ni，Ti，Al，Mg，Ca，W，Nb和Mn组成的组中的至少一种元素的％，以及由纯Cu或基本上由Cu合金构成的第二层（X）以Cu为主成分，电阻率比第一层（Y）低。第一层（Y）与透明基板接触。

5. 发明申请

US20100328247A1 TOUCH PANEL SENSOR 审中-公开
标题翻译：触摸面板传感器
公开(公告)号：US20100328247A1
公开(公告)日：2010-12-30
申请号：US12918727
申请日：2009-02-20
申请人： Aya Miki , Hiroshi Goto , Hiroyuki Okuno , Tomoya Kishi , Akira Nanbu
发明人： Aya Miki , Hiroshi Goto , Hiroyuki Okuno , Tomoya Kishi , Akira Nanbu
IPC分类号： G06F3/041
CPC分类号： G06F3/041 , C22C21/00 , H05K1/09
摘要： Disclosed is a highly reliable touch panel sensor comprising a guiding wiring that is less likely to cause an increase in electrical resistance and disconnection with the elapse of time, has a low electrical resistance, can ensure electrical conduction to a transparent conductive film, and can be connected directly to the transparent conductive film. The touch panel sensor comprises a transparent conductive film and a guiding wiring made of an aluminum alloy film connected directly to the transparent conductive film. The aluminum alloy film comprises 0.2 to 10 atomic% in total of at least one element selected from an X group consisting of Ni and Co. The aluminum alloy film has a hardness of 2 to 15 GPa.
摘要翻译：公开了一种高度可靠的触摸面板传感器，其包括不太可能随时间推移而导致电阻和断开增加的引导布线，具有低电阻，可以确保对透明导电膜的导电，并且可以直接连接到透明导电膜。触摸面板传感器包括透明导电膜和由直接连接到透明导电膜的铝合金膜制成的引导布线。铝合金膜的总和为0.2〜10原子％，选自由Ni，Co组成的X族中的至少一种元素。铝合金膜的硬度为2〜15GPa。

6. 发明申请

US20110019350A1 AL ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET 有权
标题翻译：用于显示装置的AL合金膜，显示装置和喷射目标
公开(公告)号：US20110019350A1
公开(公告)日：2011-01-27
申请号：US12922965
申请日：2009-04-23
申请人： Junichi Nakai , Akira Nanbu , Hiroshi Goto , Hiroyuki Okuno , Aya Miki
发明人： Junichi Nakai , Akira Nanbu , Hiroshi Goto , Hiroyuki Okuno , Aya Miki
IPC分类号： H05K7/00 , C22C21/00 , C23C14/14
CPC分类号： H01L23/53219 , C23C14/185 , G02F2001/136295 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.
摘要翻译：公开了一种用于显示装置的Al合金膜，即使应用低温热处理也能够实现令人满意的低电阻，可以实现Al合金膜与直接连接的Al透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

7. 发明申请

US20090242394A1 AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于AL的合金喷射目标及其制造方法
公开(公告)号：US20090242394A1
公开(公告)日：2009-10-01
申请号：US12414877
申请日：2009-03-31
申请人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Mototaka Ochi , Tomoya Kishi
发明人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Mototaka Ochi , Tomoya Kishi
IPC分类号： C23C14/34 , C21D1/00
CPC分类号： C23C14/3414 , C22C21/00 , C22F1/04
摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.
摘要翻译：本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。

8. 发明申请

US20110198602A1 ALUMINUM ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET 审中-公开
标题翻译：用于显示器件的铝合金膜，显示器件和溅射靶
公开(公告)号：US20110198602A1
公开(公告)日：2011-08-18
申请号：US13122937
申请日：2009-11-05
申请人： Akira Nanbu , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Junichi Nakai , Tomoya Kishi , Toshiaki Takagi , Shigenobu Namba , Mamoru Nagao , Nobuhiro Kobayashi
发明人： Akira Nanbu , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Junichi Nakai , Tomoya Kishi , Toshiaki Takagi , Shigenobu Namba , Mamoru Nagao , Nobuhiro Kobayashi
IPC分类号： H01L33/08 , C22C21/00 , C23C14/34 , C22C21/12 , H01L33/16
CPC分类号： C23C14/18 , C23C14/3414 , G02F1/136227 , G02F1/1368 , H01L21/2855 , H01L23/53219 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , Y10T428/12014 , H01L2924/00
摘要： Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film.
摘要翻译：公开了一种Al合金膜，其可以与用于显示装置的薄膜晶体管基板的布线结构中的透明像素电极直接接触，并且其对于在用于显示装置的胺去除剂液体下具有改善的耐腐蚀性薄膜晶体管的生产工艺。还公开了使用Al合金膜的显示装置。具体公开了一种用于显示装置的Al合金膜，所述Al合金膜与显示装置的基板上的透明导电膜直接连接，并含有0.05-2.0原子％的Ge，至少一种元素选自元素组X（Ni，Ag，Co，Zn和Cu）和0.02-2原子％的选自由稀土元素构成的元素组Q中的至少一种元素。在用于显示装置的Al合金膜中存在含Ge沉积物和/或Ge浓缩部分。还具体公开了包括Al合金膜的显示装置。

9. 发明申请

US20110008640A1 DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET 审中-公开
标题翻译：显示装置，用于制造显示装置的方法和喷射目标
公开(公告)号：US20110008640A1
公开(公告)日：2011-01-13
申请号：US12922764
申请日：2009-03-31
申请人： Hiroshi Goto , Akira Nanbu , Junichi Nakai , Hiroyuki Okuno , Mototaka Ochi , Aya Miki
发明人： Hiroshi Goto , Akira Nanbu , Junichi Nakai , Hiroyuki Okuno , Mototaka Ochi , Aya Miki
IPC分类号： G02F1/1343 , C09K19/00 , C22F1/04 , C23C14/14
CPC分类号： H01L29/458 , C22C21/00 , C22C21/10 , C23C14/3414 , H01L27/12 , H01L27/124 , H01L29/4908 , Y10T428/12049
摘要： Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film.
摘要翻译：公开了一种包括铝合金膜的显示装置。在用于显示装置的薄膜晶体管基板的布线结构中，铝合金膜可以实现铝合金薄膜和透明像素电极之间的直接接触，同时可以实现低电阻和耐热性，并且可以通过在薄膜晶体管制造方法中使用的胺系剥离液和碱性显影液来提高耐腐蚀性。在显示装置中，氧化物导电膜与Al合金膜直接接触，Al合金成分的至少一部分析出在Al合金膜的接触面上。 Al合金膜包括选自Ni，Ag，Zn和Co中的至少一种元素（元素X1）和与元素X1一起可以形成金属间化合物的至少一种元素（元素X2）。在Al合金膜中形成具有最大直径不大于150nm并由至少一个X1-X2和Al-X1-X2表示的金属间化合物。

10. 发明授权

US08422207B2 Al alloy film for display device, display device, and sputtering target 有权
标题翻译：铝合金薄膜，显示装置，溅射靶
公开(公告)号：US08422207B2
公开(公告)日：2013-04-16
申请号：US12922965
申请日：2009-04-23
申请人： Junichi Nakai , Akira Nanbu , Hiroshi Goto , Hiroyuki Okuno , Aya Miki
发明人： Junichi Nakai , Akira Nanbu , Hiroshi Goto , Hiroyuki Okuno , Aya Miki
IPC分类号： G06F1/16
CPC分类号： H01L23/53219 , C23C14/185 , G02F2001/136295 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.
摘要翻译：公开了一种用于显示装置的Al合金膜，即使应用低温热处理，也能够实现令人满意的低电阻，可以实现Al合金膜和直接连接到Al合金膜的透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

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