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    • 6. 发明授权
    • Substrate processing apparatus and method of manufacturing semiconductor device
    • 基板处理装置及半导体装置的制造方法
    • US09028191B2
    • 2015-05-12
    • US13163165
    • 2011-06-17
    • Takeshi YasuiYukitomo HirochiSatoshi TakanoRitsuo HoriiMakoto Kawabata
    • Takeshi YasuiYukitomo HirochiSatoshi TakanoRitsuo HoriiMakoto Kawabata
    • H01L21/67H01J37/32
    • H01L21/67196H01J37/32743H01J37/32788H01J37/32889H01J37/32899H01L21/67201
    • Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and an auxiliary barrier unit installed between the substrate support and the barrier, wherein the auxiliary barrier unit is installed at places other than standby spaces of the end effectors.
    • 由于具有较低温度的基板在冷却室中冷却多个基板的同时不受具有较高温度的基板的辐射热的影响,因此抑制了具有较低温度的基板的冷却速率的降低。 基板处理装置包括:负载锁定室,被配置为容纳堆叠的基板; 第一传送机构,其具有设置有第一端部执行器的第一传送臂,并且被配置为在所述负载锁定室的第一侧将所述基板传送到所述负载锁定室中或从所述负载锁定室传送; 第二传送机构,具有设置有第二端部执行器的第二传送臂,并且被配置为在所述负载锁定室的第二侧将所述基板传送到所述负载锁定室中或从所述负载锁定室传送; 安装在基板之间的屏障,其与由设置在负载锁定室中的基板支撑件支撑的基板间隔开; 以及安装在所述基板支撑件和所述屏障之间的辅助屏障单元,其中所述辅助屏障单元安装在所述末端执行器的备用空间以外的位置。