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1. 发明申请

US20110120647A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20110120647A1
公开(公告)日：2011-05-26
申请号：US13018838
申请日：2011-02-01
申请人： Hiroyuki KOBAYASHI , Masaru Izawa
发明人： Hiroyuki KOBAYASHI , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：询问处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

2. 发明申请

US20130199728A1 PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20130199728A1
公开(公告)日：2013-08-08
申请号：US13829676
申请日：2013-03-14
申请人： Hiroyuki KOBAYASHI , Kenji MAEDA , Kenetsu YOKOGAWA , Masaru IZAWA , Tadamitsu KANEKIYO
发明人： Hiroyuki KOBAYASHI , Kenji MAEDA , Kenetsu YOKOGAWA , Masaru IZAWA , Tadamitsu KANEKIYO
IPC分类号： H01L21/3065
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

3. 发明申请

US20110194924A1 METHOD FOR TRANSPORTING OBJECT TO BE PROCESSED IN SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：运输半导体制造设备中要处理的物体的方法
公开(公告)号：US20110194924A1
公开(公告)日：2011-08-11
申请号：US13090987
申请日：2011-04-20
申请人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA
发明人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA
IPC分类号： H01L21/677
CPC分类号： H01L21/67748 , H01L21/67017 , H01L21/6719 , H01L21/67196
摘要： In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber.
摘要翻译：在包括处理室的半导体制造装置中，向处理室供给气体的装置，用于对处理室进行减压的排气装置，输送室，向输送室供给气体的装置，以及用于使输送室减压的排气装置，处理室中的压力为10〜50Pa，输送室内的压力被设定为处理室的正压，处理室与输送室之间的压差为10Pa以下，流量为供给到处理室的气体是供给至运送室的气体的流量的两倍以上。

4. 发明申请

US20120211163A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20120211163A1
公开(公告)日：2012-08-23
申请号：US13457082
申请日：2012-04-26
申请人： Hiroyuki KOBAYASHI , Masaru Izawa
发明人： Hiroyuki KOBAYASHI , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：灰化处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

5. 发明申请

US20100285670A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20100285670A1
公开(公告)日：2010-11-11
申请号：US12840847
申请日：2010-07-21
申请人： Hiroyuki KOBAYASHI , Masaru IZAWA
发明人： Hiroyuki KOBAYASHI , Masaru IZAWA
IPC分类号： H01L21/465
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：询问处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

6. 发明申请

US20100163181A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20100163181A1
公开(公告)日：2010-07-01
申请号：US12369767
申请日：2009-02-12
申请人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA , Makoto NAWATA , Shingo KIMURA
发明人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA , Makoto NAWATA , Shingo KIMURA
IPC分类号： H01L21/3065 , B05C11/00
CPC分类号： H01L21/67201
摘要： There is provided a vacuum processing apparatus including a valve whose opening degree can be set to any size and a control computer which automatically controls a depressurizing rate. The vacuum processing apparatus can reduce the number of foreign particles adhered to a sample to be processed in the lock chamber and can improve the throughput at the same time.
摘要翻译：提供了一种真空处理装置，其包括可以将开度设定为任意尺寸的阀，以及自动控制减压率的控制计算机。真空处理装置可以减少在锁室中附着到待处理样品的异物的数量，并且可以同时提高生产量。

7. 发明申请

US20130136364A1 IMAGE COMBINING DEVICE AND METHOD AND STORAGE MEDIUM STORING IMAGE COMBINING PROGRAM 有权
标题翻译：图像组合设备和方法与存储媒体存储图像组合程序
公开(公告)号：US20130136364A1
公开(公告)日：2013-05-30
申请号：US13596237
申请日：2012-08-28
申请人： Hiroyuki KOBAYASHI
发明人： Hiroyuki KOBAYASHI
IPC分类号： G06K9/36 , G06K9/46
CPC分类号： G06T5/009 , G06T7/215 , G06T2207/20076 , G06T2207/20208
摘要： A device that combines a first image photographed with a first amount of exposure and a second image photographed with a second amount of exposure lower than the first amount of exposure, thereby generating a combined image having a wider dynamic range than a dynamic range for the amounts of exposure of the first and second images, the device includes a motion region extraction unit configured to extract at least one motion region in which an object moving between the first image and the second image is shown; a combining ratio determining unit configured to increase a combining ratio of the second image to the first image for a pixel in a background region outside of the at least one motion region such that the higher a luminance value of a pixel of the first image, the higher the combining ratio.
摘要翻译：一种将拍摄的第一图像与第一曝光量相结合的第一图像和以比第一曝光量低的第二曝光量曝光的第二图像，从而产生具有比动态范围更宽的动态范围的组合图像，所述装置包括：运动区域提取单元，被配置为提取显示在所述第一图像和所述第二图像之间移动的物体的至少一个运动区域; 组合比确定单元，被配置为将所述第二图像与所述第一图像的组合比增加到所述至少一个运动区域外的背景区域中的像素，使得所述第一图像的像素的亮度值越高，组合比率越高。

8. 发明申请

US20120241284A1 Plasma Sterilization and Cleaning Treatment Device for Escalator, and Escalator Using the Same 有权
标题翻译：自动扶梯等离子灭菌清洗处理装置及其自动扶梯
公开(公告)号：US20120241284A1
公开(公告)日：2012-09-27
申请号：US13342726
申请日：2012-01-03
申请人： Hiroyuki KOBAYASHI , Takumi Tandou , Naoshi Itabashi
发明人： Hiroyuki KOBAYASHI , Takumi Tandou , Naoshi Itabashi
IPC分类号： B66B31/02 , B05C9/02
CPC分类号： B66B31/02 , A61L2/14
摘要： Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals or UV light; an enclosure for housing the plasma source; a power source for generating plasma; a fan for generating relatively negative pressure in the enclosure; filter units for removing removed bacteria, viruses, and organic matters such as hand marks; and filter plates located backward and forward of a moving direction of the hand rail in the enclosure along the hand rail is provided.
摘要翻译：执行自动扶梯扶手的灭菌和清洁。包括扶手的灭菌和清洁装置; 用于用离子或自由基或UV光照射扶手的等离子体源; 用于容纳等离子体源的外壳; 用于产生等离子体的电源; 用于在外壳中产生相对负压的风扇; 用于除去去除的细菌，病毒和有机物质如手标的过滤单元; 并且提供沿着手导轨位于外壳中的手轨的移动方向的后方和前方的过滤板。

9. 发明申请

US20110186103A1 PHOTOELECTRIC CONVERSION ELEMENT, THIN-FILM SOLAR CELL, AND PHOTOELECTRIC CONVERSION ELEMENT MANUFACTURING METHOD 审中-公开
标题翻译：光电转换元件，薄膜太阳能电池和光电转换元件制造方法
公开(公告)号：US20110186103A1
公开(公告)日：2011-08-04
申请号：US13017965
申请日：2011-01-31
申请人： Hiroyuki KOBAYASHI , Toshiaki Fukunaga , Shinya Suzuki
发明人： Hiroyuki KOBAYASHI , Toshiaki Fukunaga , Shinya Suzuki
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/03928 , H01L31/02008 , H01L31/046 , Y02E10/541 , Y02P70/521
摘要： A photoelectric conversion element includes a substrate with an insulation layer having a metallic substrate and an electrical insulation layer formed on a surface of the metallic substrate, a diffusion prevention layer formed on the electrical insulation layer, an alkali supply layer being electrically conductive and formed on the diffusion prevention layer, a lower electrode formed on the alkali supply layer, a photoelectric conversion layer comprising a compound semiconductor layer and formed on the lower electrode, and an upper electrode formed on the photoelectric conversion layer. The diffusion prevention layer prevents at least diffusion of alkali metal from the alkali supply layer to the substrate with the insulation layer.
摘要翻译：一种光电转换元件包括具有金属基板的绝缘层和形成在金属基板的表面上的电绝缘层的基板，形成在电绝缘层上的扩散防止层，碱性供应层导电并形成在扩散防止层，形成在碱性供电层上的下电极，形成在下电极上的化合物半导体层的光电转换层和形成在光电转换层上的上电极。扩散防止层至少防止碱金属从碱性供应层到具有绝缘层的基板的扩散。

10. 发明申请

US20110146908A1 PLASMA PROCESSING APPARATUS AND FOREIGN PARTICLE DETECTING METHOD THEREFOR 审中-公开
标题翻译：等离子体处理装置和外来颗粒检测方法
公开(公告)号：US20110146908A1
公开(公告)日：2011-06-23
申请号：US12696072
申请日：2010-01-29
申请人： Hiroyuki KOBAYASHI , Kenji Maeda
发明人： Hiroyuki KOBAYASHI , Kenji Maeda
IPC分类号： H01L21/306 , G06K9/00
CPC分类号： H01J37/32981 , G06K9/00127 , H01J37/32192 , H01J37/32935
摘要： The present invention provides a plasma processing apparatus including: a processing chamber; a gas exhaust unit for reducing the pressure of the inside of the processing chamber through a gas exhaust line; and a laser light source for allowing laser light to transmit through an exhaust gas flowing in the gas exhaust line; an I-CCD camera for detecting scattered light caused by foreign particles passing in the laser light; and a foreign particle determination and detection unit for detecting the foreign particles from an image measured by the I-CCD camera, wherein the foreign particle determination and detection unit determines that the foreign particles are detected from the measured image when plural pixels with signals having a predetermined intensity or larger are connected in a substantially straight line.
摘要翻译：本发明提供一种等离子体处理装置，包括：处理室; 气体排出单元，用于通过排气管线减小处理室内部的压力; 以及激光源，用于允许激光透过在排气管线中流动的废气; 用于检测由激光中的异物引起的散射光的I-CCD照相机; 以及外来粒子测定和检测单元，用于从由I-CCD照相机测量的图像中检测异物，其中当具有信号的多个像素具有异物粒子确定和检测单元时，异物确定和检测单元从测量图像确定检测到异物预定强度或更大的连接在基本上直线上。

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