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1. 发明申请

US20100163181A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20100163181A1
公开(公告)日：2010-07-01
申请号：US12369767
申请日：2009-02-12
申请人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA , Makoto NAWATA , Shingo KIMURA
发明人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA , Makoto NAWATA , Shingo KIMURA
IPC分类号： H01L21/3065 , B05C11/00
CPC分类号： H01L21/67201
摘要： There is provided a vacuum processing apparatus including a valve whose opening degree can be set to any size and a control computer which automatically controls a depressurizing rate. The vacuum processing apparatus can reduce the number of foreign particles adhered to a sample to be processed in the lock chamber and can improve the throughput at the same time.
摘要翻译：提供了一种真空处理装置，其包括可以将开度设定为任意尺寸的阀，以及自动控制减压率的控制计算机。真空处理装置可以减少在锁室中附着到待处理样品的异物的数量，并且可以同时提高生产量。

2. 发明申请

US20130199728A1 PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20130199728A1
公开(公告)日：2013-08-08
申请号：US13829676
申请日：2013-03-14
申请人： Hiroyuki KOBAYASHI , Kenji MAEDA , Kenetsu YOKOGAWA , Masaru IZAWA , Tadamitsu KANEKIYO
发明人： Hiroyuki KOBAYASHI , Kenji MAEDA , Kenetsu YOKOGAWA , Masaru IZAWA , Tadamitsu KANEKIYO
IPC分类号： H01L21/3065
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

3. 发明申请

US20110194924A1 METHOD FOR TRANSPORTING OBJECT TO BE PROCESSED IN SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：运输半导体制造设备中要处理的物体的方法
公开(公告)号：US20110194924A1
公开(公告)日：2011-08-11
申请号：US13090987
申请日：2011-04-20
申请人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA
发明人： Hiroyuki KOBAYASHI , Kenji MAEDA , Masaru IZAWA
IPC分类号： H01L21/677
CPC分类号： H01L21/67748 , H01L21/67017 , H01L21/6719 , H01L21/67196
摘要： In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber.
摘要翻译：在包括处理室的半导体制造装置中，向处理室供给气体的装置，用于对处理室进行减压的排气装置，输送室，向输送室供给气体的装置，以及用于使输送室减压的排气装置，处理室中的压力为10〜50Pa，输送室内的压力被设定为处理室的正压，处理室与输送室之间的压差为10Pa以下，流量为供给到处理室的气体是供给至运送室的气体的流量的两倍以上。

4. 发明申请

US20100285670A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20100285670A1
公开(公告)日：2010-11-11
申请号：US12840847
申请日：2010-07-21
申请人： Hiroyuki KOBAYASHI , Masaru IZAWA
发明人： Hiroyuki KOBAYASHI , Masaru IZAWA
IPC分类号： H01L21/465
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：询问处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

5. 发明申请

US20110146847A1 CHEMICAL CONVERSION TREATMENT LIQUID 有权
标题翻译：化学转化处理液
公开(公告)号：US20110146847A1
公开(公告)日：2011-06-23
申请号：US13039656
申请日：2011-03-03
申请人： Masaru IZAWA , Kunio GOTO
发明人： Masaru IZAWA , Kunio GOTO
IPC分类号： C23C22/07
CPC分类号： C23C22/08 , C23C22/00 , C23C22/12 , C23C22/18 , Y10T428/13 , Y10T428/264 , Y10T428/265
摘要： A chemical conversion treatment liquid which can stably form a phosphate-type chemical conversion film on a steel material for a joint portion of an oil well steel pipe containing 0.5-13% Cr is developed.Using a chemical conversion treatment liquid to which a prescribed amount of potassium is added, a chemical conversion film containing a prescribed amount of potassium compounds and having a prescribed thickness can be formed on the threaded surface of a joint portion of an oil well steel pipe.
摘要翻译：开发了可以在含有0.5-13％Cr的油井钢管的接头部分的钢材上稳定地形成磷酸酯型化学转化膜的化学转化处理液。使用含有规定量的钾的化学转化处理液，能够在油井钢管的接合部的螺纹面上形成含有规定量的钾化合物并具有规定厚度的化学转化膜。

6. 发明申请

US20130045547A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130045547A1
公开(公告)日：2013-02-21
申请号：US13236800
申请日：2011-09-20
申请人： Masaru IZAWA , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
发明人： Masaru IZAWA , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
IPC分类号： H01L21/66 , C23F1/08
CPC分类号： H01J37/32972 , H01J37/32899 , H01L21/32137
摘要： In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.
摘要翻译：在等离子体处理装置中，其中通过匹配箱向电抗器内的处理室内的设置在样品台中的电极提供射频功率，通过匹配在at的数据值的转换点处的功率的特定值来处理晶片特征数据中包括等离子体的发光强度，其时间变化的大小，匹配箱的匹配位置以及提供给电极的射频功率的电压值的变化等特性数据中的至少两种，在处理期间利用通过使用在不同反应器中的相同晶片上执行的处理期间检测到的特征数据检测到的值而获得多个值的功率，多个处理室或等离子体之间的状态之间的差异的半导体处理装置或反应堆。

7. 发明申请

US20090299512A1 SEMICONDUCTOR MANUFACTURING SYSTEM AND METHOD 审中-公开
标题翻译：半导体制造系统和方法
公开(公告)号：US20090299512A1
公开(公告)日：2009-12-03
申请号：US12469716
申请日：2009-05-21
申请人： Junichi TANAKA , Masaru KURIHARA , Masaru IZAWA , Hiromasa ARAI , Yoichi NAKAHARA , Takahiro MARUYAMA , Nobuo FUJIWARA
发明人： Junichi TANAKA , Masaru KURIHARA , Masaru IZAWA , Hiromasa ARAI , Yoichi NAKAHARA , Takahiro MARUYAMA , Nobuo FUJIWARA
IPC分类号： G05B13/04 , G06F17/00 , G06N5/04
CPC分类号： G05B17/02
摘要： In the manufacturing system and the manufacturing method of a semiconductor device using a plasma treatment apparatus, a plasma treatment condition is controlled so that a desired shape is obtained after the plasma processing by using a processing shape prediction model for calculating the shape after the plasma processing from the inspection data of a wafer to be treated prior to the treatment and a response surface model for calculating the processing shape depending on a plasma treatment condition. In this configuration, the processing shape prediction model has an adjustable prediction model coefficient, and this prediction model coefficient is automatically calibrated.
摘要翻译：在使用等离子体处理装置的半导体装置的制造系统和制造方法中，通过使用等离子体处理后的形状计算处理形状预测模型等离子体处理后，控制等离子体处理条件，从而获得期望的形状从处理前的待处理晶片的检查数据和根据等离子体处理条件计算处理形状的响应面模型。在该配置中，处理形状预测模型具有可调节的预测模型系数，并且该预测模型系数被自动校准。

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