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1. 发明授权

US5362339A Magnetic refrigerant and process for producing the same 失效
标题翻译：磁性制冷剂及其制造方法
公开(公告)号：US5362339A
公开(公告)日：1994-11-08
申请号：US850742
申请日：1992-03-13
申请人： Hiroyuki Horimura , Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi
发明人： Hiroyuki Horimura , Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi
IPC分类号： B22D13/00 , B22D27/04 , C22C1/00 , C22C1/02 , C22C28/00 , C22C45/00 , H01F1/00 , H01F1/01 , H01F1/153
CPC分类号： H01F1/015 , C22C45/00 , H01F1/012 , H01F1/15325
摘要： A cast magnetic refrigerant having a composition represented byLn.sub.a A.sub.b M.sub.cwherein Ln is at least one element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb; A is any one of elements of Al and Ga; M is at least one element selected from the group consisting of Fe, Co, Ni, Cu and Ag; each of a, b and c is atomic %, with the proviso that a+b+c=100 atomic %, 20 atomic % .ltoreq.a.ltoreq.80 atomic %, 5 atomic % .ltoreq.b .ltoreq.50 atomic %, 5 atomic % .ltoreq.c.ltoreq.60 atomic %, and having an amorphous structure with a difference .DELTA.T of 10K or more between a glass transition temperature Tg and a crystallization temperature Tx.
摘要翻译：具有由LnaAbMc表示的成分的铸造磁性制冷剂，其中Ln是选自由Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm和Yb组成的组中的至少一种元素; A是Al和Ga的元素中的任何一种; M是选自Fe，Co，Ni，Cu和Ag中的至少一种元素; a，b和c中的每一个是原子％，条件是a + b + c = 100原子％，20原子％

2. 发明授权

US5318641A Particle-dispersion type amorphous aluminum-alloy having high strength 失效
标题翻译：具有高强度的粒子分散型无定形铝合金
公开(公告)号：US5318641A
公开(公告)日：1994-06-07
申请号：US710035
申请日：1991-06-06
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi , Hiroyuki Horimura , Noriaki Matsumoto
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi , Hiroyuki Horimura , Noriaki Matsumoto
IPC分类号： C22C45/08
CPC分类号： C22C45/08
摘要： Al.sub.100-a-b-c X.sub.a M.sub.b T.sub.c, in which X is Y (yttrium) and/or rare-earth element(s), M is Fe, Co, and/or Ni, and T is Mn, Mo, Cr, Zr and/or V, and, a=0.5-5 atomic %, b=5-15 atomic %, and c=0.2-3.0 atomic %, and, further, X and M fall on and within the hatched region range of the appended FIG. 1, has a complex, amorphous-crystalline structure with an amorphous matrix containing the Al, X, M and T, and minority crystalline phase consisting of aluminum-alloy particles containing super-saturated X, M and T as solutes. The alloy has a high strength due to the dispersed crystalline particles.
摘要翻译： Al100-ab-cXaMbTc，其中X是Y（钇）和/或稀土元素，M是Fe，Co和/或Ni，T是Mn，Mo，Cr，Zr和/或V ，a = 0.5-5原子％，b = 5〜15原子％，c = 0.2〜3.0原子％，进一步地，X和M落在附图1的阴影区域范围内。 1，具有含有Al，X，M和T的无定形基质的复杂的非结晶结构，以及由含有超饱和X，M和T作为溶质的铝合金颗粒组成的少数结晶相。该合金由于分散的结晶颗粒而具有高强度。

3. 发明授权

US5306363A Thin aluminum-based alloy foil and wire and a process for producing same 失效
标题翻译：薄铝基合金箔和线及其制造方法
公开(公告)号：US5306363A
公开(公告)日：1994-04-26
申请号：US574654
申请日：1990-08-20
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Kazuhiko Kita
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Kazuhiko Kita
IPC分类号： B21C1/00 , C21D8/02 , C21D8/06 , C22C45/08 , C22F1/00
CPC分类号： C22C45/08
摘要： An aluminum-based alloy foil or thin aluminum-based alloy wire is produced from an amorphous material made by a quenching and solidifying process and having a composition represented by the general formula:Al.sub.a M.sub.b X.sub.cwherein M is one or more elements selected from a group consisting of V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Ti, Mo, W, Ca, Li, Mg and Si; X is one or more elements selected from a group consisting of Y, Nb, Hf, Ta, La, Ce, Sm, Nd and Mm (misch metal); and a, b, and c are atomic percentages falling within the following range:50.ltoreq.a.ltoreq.950.5.ltoreq.b.ltoreq.35 and0.5.ltoreq.c.ltoreq.25Such foil or wire has a smooth surface and a very small and uniform foil thickness or wire diameter, contains at least 50% by volume of an amorphous phase, and has excellent strength and resistance to corrosion. The foil thickness and wire diameter are reduced in a rolling or drawing process at an elevated temperature over a short time period.
摘要翻译：铝基合金箔或薄铝基合金线由淬火和固化方法制成的无定形材料制成，具有由以下通式表示的组成：AlaMbXc，其中M是选自以下的一种或多种元素： V，Cr，Mn，Fe，Co，Ni，Cu，Zr，Ti，Mo，W，Ca，Li，Mg和Si; X是选自Y，Nb，Hf，Ta，La，Ce，Sm，Nd和Mm（混合稀土金属）中的一种或多种元素; 和a，b和c是原子百分比在以下范围内：50 <= a <= 95 0.5 <= b <= 35和0.5 <= c <= 25这种箔或线具有光滑的表面和非常小的箔厚度均匀，线径均匀，含有至少50体积％的非晶相，具有优异的强度和耐腐蚀性。箔片厚度和线径在轧制或拉伸过程中在较短的时间内在升高的温度下降低。

4. 发明授权

US5032196A Amorphous alloys having superior processability 失效
标题翻译：非晶合金具有优异的加工性能
公开(公告)号：US5032196A
公开(公告)日：1991-07-16
申请号：US609387
申请日：1990-11-05
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Kazuhiko Kita
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Kazuhiko Kita
IPC分类号： C22C45/00 , C22C9/00 , C22C16/00 , C22C19/00 , C22C22/00 , C22C27/00 , C22C38/00 , C22C45/02 , C22C45/04 , C22C45/10
CPC分类号： C22C45/10
摘要： Disclosed is an amorphous alloy having superior processability which has a composition represented by the general formula:X.sub.a M.sub.b Al.sub.cwhereinX is at least one element of Zr and Hf;M is at least one element selected from the group consisting of Ni, Cu, Fe, Co and Mn; anda, b and c are, in atomic percentages:25.ltoreq.a.ltoreq.85, 5.ltoreq.b.ltoreq.70 and 0

5. 发明授权

US5074935A Amorphous alloys superior in mechanical strength, corrosion resistance and formability 失效
标题翻译：非机械合金机械强度，耐腐蚀性和耐磨性
公开(公告)号：US5074935A
公开(公告)日：1991-12-24
申请号：US542747
申请日：1990-06-22
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Kazuhiko Kita , Hideki Takeda
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Kazuhiko Kita , Hideki Takeda
IPC分类号： C22C45/00 , C22C21/00 , C22C28/00 , C22C45/02 , C22C45/04 , C22C45/08 , C22C45/10
CPC分类号： C22C45/08
摘要： The present invention provides an amorphous alloy having superior mechanical strength, corrosion resistance for formability, at a relatively low cost. The amorphous alloy is a composition represented by the general formula: Al.sub.100-x-y M.sub.x Ln.sub.y wherein M is at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Hf, Ta and W; Ln is at least one element selected from the group consisting of Y, La, Ce, Nd, Sm, Gd, Tb, Dy, Ho and Yb or misch metal (Mm) which is a combination of rare earth elements; and x and y are, in atomic percentages: 0

6. 发明授权

US5344507A Wear-resistant aluminum alloy and method for working thereof 失效
标题翻译：耐磨铝合金及其加工方法
公开(公告)号：US5344507A
公开(公告)日：1994-09-06
申请号：US851932
申请日：1992-03-16
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Kazuhiko Kita , Hitoshi Yamaguchi
IPC分类号： B22D11/06 , B22F3/20 , B22F5/00 , C22C1/04 , C22C21/02 , C22C45/08 , C22F1/00 , C22F1/043 , F02B75/34 , F02F1/00 , C22C21/00
CPC分类号： F02B75/34 , C22C1/0416 , C22C21/02 , C22C45/08 , F02F1/00
摘要： An aluminum-alloy, which is wear-resistant and does not wear greatly the opposed cast iron or steel, and which can be warm worked. The alloyings the following composition and structure. Composition: Al.sub.a Si.sub.b M.sub.c X.sub.d T.sub.e (where M is at least one element selected from the group consisting of Fe, Co and. Ni; X is at least one element selected from the group consisting of Y, Ce, La and Mm (misch metal); Y is at least one element selected from the group consisting of Mn, Cr, V, Ti, Mo, Zr, W, Ta and Hf; a=50-85 atomic %, b=10-49 atomic %, c=0.5-10 atomic %, d=0.5-10 atomic %, e=0-10 atomic %, and a+b+c+d+e=100 atomic %. Structure: super-saturated face-centered cubic crystals and fine Si precipitates.
摘要翻译：铝合金，耐磨，不会大大磨损相对的铸铁或钢，可以加热。合金的组成和结构如下。组成：AlaSibMcXdTe（其中M是选自Fe，Co和Ni中的至少一种元素; X是选自Y，Ce，La和Mm（混合稀土金属）中的至少一种元素; Y是选自Mn，Cr，V，Ti，Mo，Zr，W，Ta和Hf中的至少一种元素; a = 50-85原子％，b = 10-49原子％，c = 0.5-10原子％，d = 0.5-10原子％，e = 0-10原子％，a + b + c + d + e = 100原子％结构：超饱和的面心立方晶体和微细的Si析出物。

7. 发明授权

US5213148A Production process of solidified amorphous alloy material 失效
标题翻译：固溶非晶合金材料的生产工艺
公开(公告)号：US5213148A
公开(公告)日：1993-05-25
申请号：US664056
申请日：1991-03-01
申请人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Yutaka Sato , Kazuhiko Kita
发明人： Tsuyoshi Masumoto , Akihisa Inoue , Hitoshi Yamaguchi , Noriaki Matsumoto , Yutaka Sato , Kazuhiko Kita
IPC分类号： B22D11/06 , B22D13/04 , B22D17/22 , B22D27/04 , B22D41/60 , C22C1/02
CPC分类号： B22D41/60 , B22D11/0682 , B22D13/04 , B22D17/2218 , B22D27/04
摘要： A solidified amorphous alloy material is produced from a melt of its desired metal material. A melt feeding route is provided with a first-stage quenching zone. The melt is quenched to a predetermined temperature in the first-stage quenching zone. The thus-quenched melt is then introduced into a second-stage quenching and solidification zone, whereby the melt is cooled further and solidified into a solidified material having an amorphous phase.
摘要翻译：固化的非晶合金材料由其所需的金属材料的熔体制成。熔体供给路径设置有第一级淬火区域。将熔体在第一阶段淬火区骤冷至预定温度。然后将如此骤冷的熔体引入第二阶段淬火和固化区，由此使熔体进一步冷却并固化成具有非晶相的固化材料。

8. 发明授权

US5250124A Amorphous magnesium alloy and method for producing the same 失效
标题翻译：无定形镁合金及其制造方法
公开(公告)号：US5250124A
公开(公告)日：1993-10-05
申请号：US852019
申请日：1992-03-16
申请人： Hitoshi Yamaguchi , Toshisuke Shibata , Akihisa Inoue , Akira Kato , Tsuyoshi Masumoto
发明人： Hitoshi Yamaguchi , Toshisuke Shibata , Akihisa Inoue , Akira Kato , Tsuyoshi Masumoto
IPC分类号： C22C45/00
CPC分类号： C22C45/005
摘要： A bulky amorphous magnesium alloy having heat-resistance and toughness is provided by setting the alloy composition as: Mg.sub.a M.sub.b Al.sub.c X.sub.d Z.sub.e (M is at least one element selected from the group consisting of La, Ce, Mm (misch metal) and Y, X is at least one element selected from the group consisting of Ni and Cu, and Z is at least one element selected from the group consisting of Mn, Zn, Zr, and Ti, and, a=70.about.90 at %, b=2.about.15 at %, c=1.about.9 at %, d=2.about.15 at %, e=0.1.about.8 at %, a+b+c+d+e=100 at %).

9. 发明授权

US07948349B2 Magnetic coupler 有权
标题翻译：磁耦合器
公开(公告)号：US07948349B2
公开(公告)日：2011-05-24
申请号：US12289384
申请日：2008-10-27
申请人： Susumu Haratani , Hitoshi Yamaguchi
发明人： Susumu Haratani , Hitoshi Yamaguchi
IPC分类号： H01F17/04
CPC分类号： G01R33/09 , G01R33/091 , H01F5/003 , H01F38/14
摘要： A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter.
摘要翻译：提供了具有较高响应的磁耦合器。磁耦合器包括缠绕在第一层中的薄膜线圈; 第一MR元件设置在第二层中，并且检测由流过薄膜线圈的信号电流产生的感应磁场; 并且轭设置成靠近第一MR元件，并且包括软磁材料。第一MR元件被布置在与层叠方向上的薄膜线圈的线性区域对应的位置。磁轭以将第一MR元件插入第二层的方式设置在薄膜线圈的内侧转弯侧和外侧转动侧。因此，抑制感应磁场强度的降低，感应磁场的强度分布变得更平坦。

10. 发明授权

US07928470B2 Semiconductor device having super junction MOS transistor and method for manufacturing the same 有权
标题翻译：具有超结MOS晶体管的半导体器件及其制造方法
公开(公告)号：US07928470B2
公开(公告)日：2011-04-19
申请号：US11598646
申请日：2006-11-14
申请人： Hitoshi Yamaguchi , Jun Sakakibara
发明人： Hitoshi Yamaguchi , Jun Sakakibara
IPC分类号： H01L29/66
CPC分类号： H01L29/66712 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.
摘要翻译：具有超结MOS晶体管的半导体器件包括：半导体衬底; 在所述基板上的第一半导体层; 在所述第一半导体层上的第二半导体层; 在第二半导体层的第一表面部分上的沟道形成区; 在所述沟道形成区域的第一表面部分上的源极区域; 在所述沟道形成区域的第二表面部分上的源极接触区域; 在沟道形成区域的第三表面部分上的栅电极; 源极区域和源极接触区域上的源极电极; 位于衬底背面的漏电极; 以及在所述第二半导体层的第二表面部分上的阳极电极。阳极电极提供肖特基势垒二极管。

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