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1. 发明授权

US6022669A Method of fabricating an integrated circuit using self-patterned thin films 失效
标题翻译：使用自图案薄膜制造集成电路的方法
公开(公告)号：US6022669A
公开(公告)日：2000-02-08
申请号：US687721
申请日：1996-07-26
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , G03F7/00 , G03C1/73
CPC分类号： H01L21/31691 , H01L28/55
摘要： A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.
摘要翻译：将第一感光性液体溶液施加到基板上，通过暴露于辐射和显影进行图案化，并退火以形成期望的固体材料，例如并入集成电路的部件中的SrBi2Ta2O9。制造工艺被设计成保护自来自常规IC处理的图案化固体材料并且保护常规材料（例如硅）从自身图案化固体材料中的元件。在一个实施例中，在SrBi 2 Ta 2 O 9上形成氧化铋层，氧化铋蚀刻氧化铋。氧化铋保护SrBi2Ta2O9免受腐蚀，并被蚀刻剂还原成铋。任何剩余的氧化铋和大部分铋在退火过程中蒸发，剩余的铋掺入到SrBi2Ta2O9中。

2. 发明授权

US6051858A Ferroelectric/high dielectric constant integrated circuit and method of fabricating same 失效
标题翻译：铁电/高介电常数集成电路及其制造方法
公开(公告)号：US6051858A
公开(公告)日：2000-04-18
申请号：US892699
申请日：1997-07-15
申请人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11502 , H01L28/55
摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.
摘要翻译：硅衬底上的晶体管被绝缘层覆盖。导电插塞通过绝缘层到晶体管漏极。直接覆盖插头和漏极的铁电电容器的底部电极接触插头。铁电层是自我构图的，并且完全覆盖在存储单元上。自图案牺牲层完全覆盖铁电层。电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。

3. 发明授权

US5942376A Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films 失效
标题翻译：稳定的液态金属芳基酮醇化物溶液及其在薄膜光致化图案化中的应用
公开(公告)号：US5942376A
公开(公告)日：1999-08-24
申请号：US911098
申请日：1997-08-14
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C09D5/00 , G03F7/004 , G03F7/038 , H01L21/027 , B05D3/06
CPC分类号： G03F7/0042 , Y10S505/734
摘要： Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
摘要翻译：光敏金属芳基酮醇化物的溶液膜通过在掩模下暴露于紫外线辐射而被微图案化。所得图案在非极性溶剂中显影并退火以提供用于集成电路的薄膜金属氧化物。

4. 发明授权

US5788757A Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same 失效
标题翻译：使用用于制造金属氧化物膜的酯溶剂和包括其的电子器件的组合物和方法
公开(公告)号：US5788757A
公开(公告)日：1998-08-04
申请号：US770991
申请日：1996-12-23
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Jeffrey W. Bacon , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Jeffrey W. Bacon , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C01B13/32 , C01G33/00 , C01G35/00 , C23C18/12 , H01L21/8242 , H01L27/10 , H01L27/108 , C07F19/00 , C07F3/00 , C07F9/00 , C07F9/94
CPC分类号： C23C18/1216 , C23C18/1279
摘要： A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.
摘要翻译：金属有机液体前体溶液包括分散在酯溶剂中的金属有机配合物。酯溶剂具有中等长度的碳链以防止溶液中强正电性金属的沉淀。使用液体前体溶液制备厚度均匀且品质一致的薄膜金属氧化物。

5. 发明授权

US5792592A Photosensitive liquid precursor solutions and use thereof in making thin films 失效
标题翻译：感光性液体前体溶液及其在制备薄膜中的应用
公开(公告)号：US5792592A
公开(公告)日：1998-08-11
申请号：US653444
申请日：1996-05-24
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： G03F7/027 , C08F2/48 , C08F20/06 , C08F20/26 , C08F30/04 , C30B29/30 , C30B29/68 , G03F7/004 , G03F7/029 , G03F7/40 , H01L21/02 , H01L21/027 , H01L21/312 , H01L21/314 , H01L21/316 , G03F7/30
CPC分类号： H01L21/31691 , G03F7/0047 , H01L21/312 , H01L28/55
摘要： A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.
摘要翻译：使用感光性液体溶液制造用于集成电路的薄膜。感光性液体溶液含有光引发剂和溶剂，以及与自由基易感单体结合的金属的混合物。金属以与从该衍生的金属氧化物薄膜的期望化学计量相对应的量混合。将感光性液体溶液施加到基材上，软化并在光掩模下暴露于紫外线下。紫外线辐射通过自由基聚合反应形成软烘烤膜。使用溶剂蚀刻来除去聚合膜的未聚合部分。将剩余的薄膜图案退火以提供图案化的金属氧化物膜。

6. 发明授权

US5630872A Formation of thin-film patterns of a metal oxide 失效
标题翻译：形成金属氧化物的薄膜图案
公开(公告)号：US5630872A
公开(公告)日：1997-05-20
申请号：US570576
申请日：1995-12-11
申请人： Katsumi Ogi , Tadashi Yonezawa , Nobuyuki Soyama , Kensuke Kageyama
发明人： Katsumi Ogi , Tadashi Yonezawa , Nobuyuki Soyama , Kensuke Kageyama
IPC分类号： C03C17/25 , C23C18/14 , C23C26/00 , H01L21/314 , H01L21/316
CPC分类号： C03C17/25 , C23C18/14 , C23C26/00 , H01L21/316 , H01L21/31691 , C03C2218/11 , C03C2218/328
摘要： A composition for formation of thin-film patterns of a metal oxide which comprises a metal alkoxide and one or more nitro compounds selected from the group consisting of nitrobenzyl alcohol derivatives, nitrobenzaldehyde derivatives, nitrostyrol derivatives, nitroacetophenone derivatives, nitroanisole derivatives and nitrofuran derivatives. This composition is applied to a substrate which is then irradiated with light to perform patterning by utilizing the difference in solubility between the light-irradiated portion and the non-light-irradiated portion, attributed to the photodecomposition reaction of the irradiated portion. A photoreactive compound is added to a starting solution which contains an organic solvent and an organic metal compound, the solution is misted, and the resulting mist is deposited on a substrate while irradiating with light.
摘要翻译：用于形成金属氧化物的薄膜图案的组合物，其包含金属醇盐和一种或多种选自硝基苄醇衍生物，硝基苯甲醛衍生物，硝基苯乙烯衍生物，硝基苯乙酮衍生物，硝基苯甲醚衍生物和硝基呋喃衍生物的硝基化合物。将该组合物施加到基材上，然后用光照射，由于照射部分的光分解反应，利用光照射部分和非光照射部分之间的溶解度差异来进行图案化。向包含有机溶剂和有机金属化合物的起始溶液中加入光反应性化合物，使溶液发生雾化，并将所得雾沉积在基板上同时照射光。

7. 发明授权

US5849465A Photosensitive titanium carboxydiketonate and titanium carboxyketoester precursor solutions and method of patterning integrated circuits using the same 失效
标题翻译：光敏钛羧基酮酸酯和钛羧基酮酯前体溶液及使用其形成集成电路的方法
公开(公告)号：US5849465A
公开(公告)日：1998-12-15
申请号：US747146
申请日：1996-11-08
申请人： Hiroto Uchida , Katsumi Ogi , Nobuyuki Soyama
发明人： Hiroto Uchida , Katsumi Ogi , Nobuyuki Soyama
IPC分类号： G03F7/004 , G03F7/40 , G03C5/00
CPC分类号： G03F7/0042 , G03F7/40 , Y10S430/148
摘要： A photosensitive liquid precursor solution including titanium carboxyketoesters or titanium carboxydiketonates polymerizes upon exposure to ultraviolet radiation. The solution is applied to an integrated circuit substrate, masked, and exposed to ultraviolet radiation to pattern the liquid precursor film. Unexposed portions of the film are removed in a developer solution including alcohol and water. The remaining portion of the film constitutes a pattern that may be annealed to form a metal oxide.
摘要翻译：包含钛羧基酮酯或羧基羧酸钛的感光性液体前体溶液在暴露于紫外线辐射下聚合。该解决方案被应用于集成电路基板，被掩蔽并暴露于紫外线辐射以对液体前体膜进行图案化。膜的未曝光部分在包括醇和水的显影剂溶液中除去。膜的剩余部分构成可以退火以形成金属氧化物的图案。

8. 发明授权

US5605723A Method for forming a pattern of non-volatile ferroelectric thin film memory 失效
标题翻译：用于形成非挥发性铁电薄膜存储器的图案的方法
公开(公告)号：US5605723A
公开(公告)日：1997-02-25
申请号：US434312
申请日：1995-05-02
申请人： Katsumi Ogi , Tsutomu Atsuki , Hiroto Uchida , Tadashi Yonezawa , Nobuyuki Soyama
发明人： Katsumi Ogi , Tsutomu Atsuki , Hiroto Uchida , Tadashi Yonezawa , Nobuyuki Soyama
IPC分类号： H01L27/10 , G03F7/004 , H01L27/115 , B05D3/06 , B05D3/02 , C23C18/00 , H05H1/00
CPC分类号： H01L27/11502 , G03F7/004 , G03F7/0045 , G03F7/0047 , Y10S430/168
摘要： A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I):(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2-(I)where A is one or more elements selected from the group consisting of Ba, Sr, Pb and Bi; B is one or more elements selected from the group consisting of Ti, Nb and Ta; and m is an integer of from 2 to 5.
摘要翻译：通过施加含有水解金属化合物的组合物和在活性光线照射到基材上时产生水的光敏剂，形成非挥发性高性能铁电薄膜存储器的图案。所得的膜根据规定的图案暴露于活性射线以形成图像并用溶剂显影以除去未曝光的部分，然后对剩余的暴露部分进行热处理，以将暴露部分转化为电介质包含如下式（I）所示的金属氧化物的物质：（Bi 2 O 2）2+（Am-1BmO 3 m + 1）2-（I）其中A是选自Ba，Sr，Pb中的一种或多种元素和Bi B是选自Ti，Nb和Ta中的一种或多种元素; m为2〜5的整数。

9. 发明授权

US5637440A Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern 失效
标题翻译：用于形成金属氧化物薄膜图案的组合物和用于形成金属氧化物薄膜图案的方法
公开(公告)号：US5637440A
公开(公告)日：1997-06-10
申请号：US361837
申请日：1994-12-22
申请人： Katsumi Ogi , Tsutomu Atsuki , Go Sasaki , Tadashi Yonezawa , Nobuyuki Soyama
发明人： Katsumi Ogi , Tsutomu Atsuki , Go Sasaki , Tadashi Yonezawa , Nobuyuki Soyama
IPC分类号： G03F7/004 , G03C1/492 , G03C1/494 , G03C1/76
CPC分类号： G03F7/0042 , G03F7/004 , G03F7/0047 , Y10S430/12 , Y10S430/122
摘要： A composition for forming a metal oxide thin film pattern which is a solution containing one or more hydrolytic metal compounds selected from the group consisting of hydrolytic organometallic compounds (e.g., metal alkoxide) and metal halides, and a water generating agent which frees water under the effect of irradiation with active rays (e.g., o-nitrobenzyl alcohol and 2-nitroethanol) and, as required, an acid generating agent which frees acid under the effect of irradiation with active rays is disclosed. A thin film pattern is formed by coating the composition onto a substrate, irradiating active rays for forming an image on the resultant photosensitive coating film, developing the same with water or an alcoholic solvent to remove the non-exposed portion, and heat-treating the substrate to convert the remaining film into a metal oxide, thereby forming a negative-type metal oxide thin film pattern.
摘要翻译：用于形成金属氧化物薄膜图案的组合物，其是含有一种或多种选自水解有机金属化合物（例如金属醇盐）和金属卤化物的水解金属化合物的溶液，以及将水公开了用活性射线照射的效果（例如邻硝基苄醇和2-硝基乙醇）和根据需要的在活性射线照射下释放酸的酸产生剂。通过将组合物涂布在基材上，照射用于在所得感光性涂膜上形成图像的活性射线，用水或醇溶剂进行显影以除去未曝光部分，并对其进行热处理，形成薄膜图案将剩余的膜转换为金属氧化物，从而形成负型金属氧化物薄膜图案。

10. 发明授权

US06987197B2 Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film 失效
标题翻译：有机锆复合物及其合成方法，含有该组合物的原料溶液以及钛酸锆酸铅薄膜的制备方法
公开(公告)号：US06987197B2
公开(公告)日：2006-01-17
申请号：US10634767
申请日：2003-08-06
申请人： Shingo Okamura , Hideyuki Hirakoso , Nobuyuki Soyama , Katsumi Ogi , Yoshinori Takayama
发明人： Shingo Okamura , Hideyuki Hirakoso , Nobuyuki Soyama , Katsumi Ogi , Yoshinori Takayama
IPC分类号： C23C16/40 , C07F7/00
CPC分类号： C07F7/003
摘要： The organozirconium composite of the present invention has a decomposition temperature which is near the respective decomposition temperatures of an organolead compound and an organotitanium compound. The raw material solution can precisely control the composition of a PZT thin film over a broad temperature range. The raw material solution is less likely to react an organolead compound even when mixed with the organolead compound. The present invention provides a raw material solution which is less likely to cause vapor phase cracking. The organozirconium composite comprises one, or at least two kinds of zirconium chelate complexes containing, as a ligand, both of a first β diketone and a second β diketone having a structure different from that of the first β diketone, wherein, when at least two kinds of zirconium chelate complexes are contained, the coordination numbers of the first β diketone and the second β diketone that coordinate to at least two kinds of zirconium chelate complexes vary depending on the respective zirconium chelate complexes.
摘要翻译：本发明的有机锆复合物的分解温度接近有机锡化合物和有机钛化合物的分解温度。原料溶液可以在宽温度范围内精确控制PZT薄膜的组成。即使与有机锡化合物混合，原料溶液也不太可能与有机基化合物反应。本发明提供一种不易引起气相裂化的原料溶液。所述有机锆复合物包含一种或至少两种含有作为配体的锆螯合络合物，所述锆螯合配合物具有与第一β二酮的结构不同的第一β二酮和第二β二酮，其中当至少两个含有锆螯合物的种类，与至少两种锆螯合物配位的第一个β二酮和第二个β二酮的配位数根据各自的锆螯合物的不同而变化。

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