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1. 发明授权

US5788757A Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same 失效
标题翻译：使用用于制造金属氧化物膜的酯溶剂和包括其的电子器件的组合物和方法
公开(公告)号：US5788757A
公开(公告)日：1998-08-04
申请号：US770991
申请日：1996-12-23
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Jeffrey W. Bacon , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Jeffrey W. Bacon , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C01B13/32 , C01G33/00 , C01G35/00 , C23C18/12 , H01L21/8242 , H01L27/10 , H01L27/108 , C07F19/00 , C07F3/00 , C07F9/00 , C07F9/94
CPC分类号： C23C18/1216 , C23C18/1279
摘要： A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.
摘要翻译：金属有机液体前体溶液包括分散在酯溶剂中的金属有机配合物。酯溶剂具有中等长度的碳链以防止溶液中强正电性金属的沉淀。使用液体前体溶液制备厚度均匀且品质一致的薄膜金属氧化物。

2. 发明授权

US6022669A Method of fabricating an integrated circuit using self-patterned thin films 失效
标题翻译：使用自图案薄膜制造集成电路的方法
公开(公告)号：US6022669A
公开(公告)日：2000-02-08
申请号：US687721
申请日：1996-07-26
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , G03F7/00 , G03C1/73
CPC分类号： H01L21/31691 , H01L28/55
摘要： A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.
摘要翻译：将第一感光性液体溶液施加到基板上，通过暴露于辐射和显影进行图案化，并退火以形成期望的固体材料，例如并入集成电路的部件中的SrBi2Ta2O9。制造工艺被设计成保护自来自常规IC处理的图案化固体材料并且保护常规材料（例如硅）从自身图案化固体材料中的元件。在一个实施例中，在SrBi 2 Ta 2 O 9上形成氧化铋层，氧化铋蚀刻氧化铋。氧化铋保护SrBi2Ta2O9免受腐蚀，并被蚀刻剂还原成铋。任何剩余的氧化铋和大部分铋在退火过程中蒸发，剩余的铋掺入到SrBi2Ta2O9中。

3. 发明授权

US5942376A Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films 失效
标题翻译：稳定的液态金属芳基酮醇化物溶液及其在薄膜光致化图案化中的应用
公开(公告)号：US5942376A
公开(公告)日：1999-08-24
申请号：US911098
申请日：1997-08-14
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C09D5/00 , G03F7/004 , G03F7/038 , H01L21/027 , B05D3/06
CPC分类号： G03F7/0042 , Y10S505/734
摘要： Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
摘要翻译：光敏金属芳基酮醇化物的溶液膜通过在掩模下暴露于紫外线辐射而被微图案化。所得图案在非极性溶剂中显影并退火以提供用于集成电路的薄膜金属氧化物。

4. 发明授权

US5792592A Photosensitive liquid precursor solutions and use thereof in making thin films 失效
标题翻译：感光性液体前体溶液及其在制备薄膜中的应用
公开(公告)号：US5792592A
公开(公告)日：1998-08-11
申请号：US653444
申请日：1996-05-24
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： G03F7/027 , C08F2/48 , C08F20/06 , C08F20/26 , C08F30/04 , C30B29/30 , C30B29/68 , G03F7/004 , G03F7/029 , G03F7/40 , H01L21/02 , H01L21/027 , H01L21/312 , H01L21/314 , H01L21/316 , G03F7/30
CPC分类号： H01L21/31691 , G03F7/0047 , H01L21/312 , H01L28/55
摘要： A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.
摘要翻译：使用感光性液体溶液制造用于集成电路的薄膜。感光性液体溶液含有光引发剂和溶剂，以及与自由基易感单体结合的金属的混合物。金属以与从该衍生的金属氧化物薄膜的期望化学计量相对应的量混合。将感光性液体溶液施加到基材上，软化并在光掩模下暴露于紫外线下。紫外线辐射通过自由基聚合反应形成软烘烤膜。使用溶剂蚀刻来除去聚合膜的未聚合部分。将剩余的薄膜图案退火以提供图案化的金属氧化物膜。

5. 发明授权

US6051858A Ferroelectric/high dielectric constant integrated circuit and method of fabricating same 失效
标题翻译：铁电/高介电常数集成电路及其制造方法
公开(公告)号：US6051858A
公开(公告)日：2000-04-18
申请号：US892699
申请日：1997-07-15
申请人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11502 , H01L28/55
摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.
摘要翻译：硅衬底上的晶体管被绝缘层覆盖。导电插塞通过绝缘层到晶体管漏极。直接覆盖插头和漏极的铁电电容器的底部电极接触插头。铁电层是自我构图的，并且完全覆盖在存储单元上。自图案牺牲层完全覆盖铁电层。电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。

6. 发明授权

US06174213B1 Fluorescent lamp and method of manufacturing same 失效
标题翻译：荧光灯及其制造方法
公开(公告)号：US06174213B1
公开(公告)日：2001-01-16
申请号：US09388038
申请日：1999-09-01
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
IPC分类号： B05D722
CPC分类号： C03C17/3417 , C03C17/253 , C03C2217/21 , C03C2217/211 , C03C2217/24 , C03C2217/244 , C23C18/1216 , C23C18/1225 , C23C18/1275 , C23C18/1283 , C23C18/1291
摘要： Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.
摘要翻译：将金属有机前体化合物溶解在有机溶剂中以形成非水性液体前体。将液体前体施加到荧光灯的内包络面上并加热形成金属氧化物薄膜层。金属氧化物薄膜层可以是导体，保护层或提供其他功能。膜的厚度为20nm至500nm。可以通过选择前体组合物和退火温度的组合来制造包含具有铌掺杂剂的锡 - 锑氧化物的导电层以具有差分电阻率分布。

7. 发明授权

US06511718B1 Method and apparatus for fabrication of thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造薄膜的方法和装置
公开(公告)号：US06511718B1
公开(公告)日：2003-01-28
申请号：US09446226
申请日：1999-12-17
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
IPC分类号： H05H124
CPC分类号： C23C16/45565 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C18/12 , H01L21/31691 , H01L28/55
摘要： A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C. to form polycrystalline metal oxide material, in particular, ferroelectric layered superlattice material.
摘要翻译：文丘里雾发生器产生包含具有小于1微米的平均直径的液滴的雾，所述液体前体含有多金属聚烷氧化物。将雾混合，然后进入气化器，在气化器中雾滴在100℃和250℃之间的温度下气化，该温度低于前体化合物分解的温度。气化的前体化合物通过载气在环境温度下通过绝缘管输送，以防止冷凝和过早分解。将气化的前体与氧化剂气体混合，并将气态反应物混合物通过喷头入口注入沉积反应器中，在沉积反应器中将基底在300℃至600℃的温度下加热。气化的前体在衬底并在衬底上形成固体材料的薄膜。该薄膜在500℃至900℃的高温下进行处理以形成多晶金属氧化物材料，特别是铁电层状超晶格材料。

8. 发明授权

US06376691B1 Metal organic precursors for transparent metal oxide thin films and method of making same 失效
标题翻译：透明金属氧化物薄膜的金属有机前体及其制备方法
公开(公告)号：US06376691B1
公开(公告)日：2002-04-23
申请号：US09388044
申请日：1999-09-01
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译：用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。在一个实施例中，液体前体用于制造导电薄膜。在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。含有多种金属的液体前体具有更长的保质期。向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

9. 发明授权

US06686489B2 Metal organic precursors for transparent metal oxide thin films and method of making same 失效
标题翻译：透明金属氧化物薄膜的金属有机前体及其制备方法
公开(公告)号：US06686489B2
公开(公告)日：2004-02-03
申请号：US10037877
申请日：2001-11-09
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译：用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。在一个实施例中，液体前体用于制造导电薄膜。在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。含有多种金属的液体前体具有更长的保质期。向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

10. 发明授权

US06441414B1 Ferroelectric field effect transistor, memory utilizing same, and method of operating same 失效
标题翻译：铁电场效应晶体管，利用其的存储器及其操作方法
公开(公告)号：US06441414B1
公开(公告)日：2002-08-27
申请号：US09170590
申请日：1998-10-13
申请人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/223 , H01L21/28291 , H01L29/78391
摘要： A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. The fact that the drain to source current, lds, is always negative if a substrate to drain bias, Vss, of 0.8 volts or more is applied, permits the creation of a read and write truth table. A gate voltage equal to one truth table logic value is applied via a column decoder and a substrate bias equal to another truth table logic value is applied via a row decoder to write to the memory a resultant lds logic state, which can be read whenever a voltage is placed across the source and drain.
摘要翻译：一种铁电非易失性存储器，其中每个存储单元由单个电子元件，铁电FET组成。 FET包括源极，漏极，栅极和衬底。如果施加0.8伏或更高的衬底到漏极偏压Vss，则漏源到源电流lds总是为负，这允许创建读写真值表。通过列解码器施加等于一个真值表逻辑值的栅极电压，并且经由行解码器施加等于另一个真值表逻辑值的衬底偏置，以向存储器写入结果lds逻辑状态，其可以在每当电压跨过源极和漏极放置。

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