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1. 发明授权

US07183696B2 Thin film piezoelectric element, suspension assembly, and hard disk drive 有权
标题翻译：薄膜压电元件，悬挂组件和硬盘驱动器
公开(公告)号：US07183696B2
公开(公告)日：2007-02-27
申请号：US11054427
申请日：2005-02-10
申请人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
发明人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： H01L41/08
CPC分类号： H01L41/0986 , G11B5/484 , G11B5/486
摘要： A thin film piezoelectric element has a laminate including a piezoelectric film and a pair of electrode films placed so as to sandwich the piezoelectric film in between, a resin film formed so as to cover the laminate, and an electrode formed on the resin film and electrically connected to the electrode film. The resin film is formed so that a thickness of a region where the electrode is formed is larger than a thickness of a region corresponding to a displaced portion of the laminate.
摘要翻译：薄膜压电元件具有层压体，其包括压电薄膜和将压电薄膜夹在其间的一对电极薄膜，形成为覆盖层叠体的树脂薄膜和形成在树脂薄膜上的电极，连接到电极膜。形成树脂膜，使得形成电极的区域的厚度大于对应于层压体的位移部分的区域的厚度。

2. 发明授权

US07420785B2 Suspension assembly, hard disk drive, and method of manufacturing suspension assembly 有权
标题翻译：悬挂组件，硬盘驱动器和制造悬架组件的方法
公开(公告)号：US07420785B2
公开(公告)日：2008-09-02
申请号：US11054280
申请日：2005-02-10
申请人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
发明人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： G11B21/24
CPC分类号： G11B5/56 , G11B5/483 , G11B5/5552
摘要： A head slider having a thin film magnetic head is mounted on a suspension assembly. The suspension assembly is comprised of a metal plate-like member, and a piezoelectric actuator for displacing the head slider relative to the suspension assembly. The piezoelectric actuator has a piezoelectric film, and a pair of electrode films placed so as to sandwich the piezoelectric film in between. The piezoelectric film and the pair of electrode films are formed in an order of one electrode film, the piezoelectric film, and the other electrode film on the plate-like member.
摘要翻译：具有薄膜磁头的磁头滑块安装在悬架组件上。悬架组件由金属板状构件和用于相对于悬架组件移位头滑块的压电致动器构成。压电致动器具有压电膜和一对电极膜，以将压电膜夹在其间。压电膜和一对电极膜按板状构件上的一个电极膜，压电膜和另一个电极膜的顺序形成。

3. 发明申请

US20050200237A1 Thin film piezoelectric element, suspension assembly, and hard disk drive 有权
标题翻译：薄膜压电元件，悬挂组件和硬盘驱动器
公开(公告)号：US20050200237A1
公开(公告)日：2005-09-15
申请号：US11054427
申请日：2005-02-10
申请人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
发明人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： H01L41/09 , G11B5/48 , H01L41/08 , H01L41/18 , H01L41/22 , H01L41/23
CPC分类号： H01L41/0986 , G11B5/484 , G11B5/486
摘要： A thin film piezoelectric element has a laminate including a piezoelectric film and a pair of electrode films placed so as to sandwich the piezoelectric film in between, a resin film formed so as to cover the laminate, and an electrode formed on the resin film and electrically connected to the electrode film. The resin film is formed so that a thickness of a region where the electrode is formed is larger than a thickness of a region corresponding to a displaced portion of the laminate.
摘要翻译：薄膜压电元件具有层压体，其包括压电薄膜和将压电薄膜夹在其间的一对电极薄膜，形成为覆盖层叠体的树脂薄膜和形成在树脂薄膜上的电极，连接到电极膜。形成树脂膜，使得形成电极的区域的厚度大于对应于层压体的位移部分的区域的厚度。

4. 发明授权

US07247975B2 Thin-film piezoelectric element and method of making same 有权
标题翻译：薄膜压电元件及其制造方法
公开(公告)号：US07247975B2
公开(公告)日：2007-07-24
申请号：US11078565
申请日：2005-03-14
申请人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
发明人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： H01L41/08
CPC分类号： H01L41/0471 , H01L41/0477 , H01L41/083 , H01L41/1875 , H01L41/27 , H01L41/316
摘要： Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.
摘要翻译：本发明提供一种能够减少留在电极膜上的氧化膜对元件特性劣化的影响的薄膜压电元件，以及制造该薄膜压电元件的方法。薄膜压电元件以覆盖层叠体的氧化膜的最外层的主要成分为ZrO 2。 ZrO 2的杨氏模量为190GPa，与MgO的杨氏模量245GPa相比，显着低得多。因此，氧化膜对压电膜的位移幅度的减小的影响小于常规薄膜压电元件中残留的MgO薄膜的影响。结果，与传统的薄膜压电元件相比，薄膜压电元件降低了氧化膜对元件特性的降低的影响。

5. 发明申请

US20050195531A1 Suspension assembly, hard disk drive, and method of manufacturing suspension assembly 有权
标题翻译：悬挂组件，硬盘驱动器和制造悬架组件的方法
公开(公告)号：US20050195531A1
公开(公告)日：2005-09-08
申请号：US11054280
申请日：2005-02-10
申请人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
发明人： Hiroshi Yamazaki , Ken Unno , Kenichi Tochi , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： G11B5/596 , G11B5/56 , G11B21/10 , G11B21/21
CPC分类号： G11B5/56 , G11B5/483 , G11B5/5552
摘要： A head slider having a thin film magnetic head is mounted on a suspension assembly. The suspension assembly is comprised of a metal plate-like member, and a piezoelectric actuator for displacing the head slider relative to the suspension assembly. The piezoelectric actuator has a piezoelectric film, and a pair of electrode films placed so as to sandwich the piezoelectric film in between. The piezoelectric film and the pair of electrode films are formed in an order of one electrode film, the piezoelectric film, and the other electrode film on the plate-like member.
摘要翻译：具有薄膜磁头的磁头滑块安装在悬架组件上。悬架组件由金属板状构件和用于相对于悬架组件移位头滑块的压电致动器构成。压电致动器具有压电膜和一对电极膜，以将压电膜夹在其间。压电膜和一对电极膜按板状构件上的一个电极膜，压电膜和另一个电极膜的顺序形成。

6. 发明申请

US20050212389A1 Thin-film piezoelectric element and method of making same 有权
标题翻译：薄膜压电元件及其制造方法
公开(公告)号：US20050212389A1
公开(公告)日：2005-09-29
申请号：US11078565
申请日：2005-03-14
申请人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
发明人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： H01L41/083 , H01L41/047 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/313 , H01L41/316
CPC分类号： H01L41/0471 , H01L41/0477 , H01L41/083 , H01L41/1875 , H01L41/27 , H01L41/316
摘要： Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.
摘要翻译：本发明提供一种能够减少留在电极膜上的氧化膜对元件特性劣化的影响的薄膜压电元件，以及制造该薄膜压电元件的方法。薄膜压电元件以覆盖层叠体的氧化膜的最外层的主要成分为ZrO 2。 ZrO 2的杨氏模量为190GPa，与MgO的杨氏模量245GPa相比，显着低得多。因此，氧化膜对压电膜的位移幅度的减小的影响小于常规薄膜压电元件中残留的MgO薄膜的影响。结果，与传统的薄膜压电元件相比，薄膜压电元件降低了氧化膜对元件特性的降低的影响。

7. 发明授权

US07636994B2 Method of making a piezoelectric device 有权
标题翻译：制造压电元件的方法
公开(公告)号：US07636994B2
公开(公告)日：2009-12-29
申请号：US11360394
申请日：2006-02-24
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L41/22 , H01L41/00 , H03H9/00
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧。因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

8. 发明授权

US08183749B2 Electronic device and method of making same 有权
标题翻译：电子设备及其制作方法
公开(公告)号：US08183749B2
公开(公告)日：2012-05-22
申请号：US12458274
申请日：2009-07-07
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L41/22
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧。因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

9. 发明申请

US20090271962A1 Electronic device and method of making same 有权
标题翻译：电子设备及其制作方法
公开(公告)号：US20090271962A1
公开(公告)日：2009-11-05
申请号：US12458274
申请日：2009-07-07
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L41/22 , H01L21/302 , H01L21/461
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧。因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

10. 发明申请

US20060205225A1 Electronic device and method of making same 有权
标题翻译：电子设备及其制作方法
公开(公告)号：US20060205225A1
公开(公告)日：2006-09-14
申请号：US11360394
申请日：2006-02-24
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R 1位于电极膜46A。为此，为了从多层基板61去除单晶硅基板14，其中蚀刻溶液渗透在聚酰亚胺72和层压体60之间，蚀刻溶液在其到达压电体之前绕过电极膜46A 也就是说，通过电极膜46A，使压电膜52A的蚀刻溶液的路线A显着延长。因此，在制造电子器件74的方法中，蚀刻溶液不太可能达到压电膜52A。显着抑制压电膜52A的溶解的情况，实现了制造的压电元件74的特性的提高。

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