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1. 发明授权

US07636994B2 Method of making a piezoelectric device 有权
标题翻译：制造压电元件的方法
公开(公告)号：US07636994B2
公开(公告)日：2009-12-29
申请号：US11360394
申请日：2006-02-24
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L41/22 , H01L41/00 , H03H9/00
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧。因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

2. 发明授权

US08183749B2 Electronic device and method of making same 有权
标题翻译：电子设备及其制作方法
公开(公告)号：US08183749B2
公开(公告)日：2012-05-22
申请号：US12458274
申请日：2009-07-07
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L41/22
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧。因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

3. 发明申请

US20090271962A1 Electronic device and method of making same 有权
标题翻译：电子设备及其制作方法
公开(公告)号：US20090271962A1
公开(公告)日：2009-11-05
申请号：US12458274
申请日：2009-07-07
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L41/22 , H01L21/302 , H01L21/461
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧。因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

4. 发明申请

US20060205225A1 Electronic device and method of making same 有权
标题翻译：电子设备及其制作方法
公开(公告)号：US20060205225A1
公开(公告)日：2006-09-14
申请号：US11360394
申请日：2006-02-24
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译：本发明提供了具有改进特性的电子设备和制造该电子设备的方法。在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R 1位于电极膜46A。为此，为了从多层基板61去除单晶硅基板14，其中蚀刻溶液渗透在聚酰亚胺72和层压体60之间，蚀刻溶液在其到达压电体之前绕过电极膜46A 也就是说，通过电极膜46A，使压电膜52A的蚀刻溶液的路线A显着延长。因此，在制造电子器件74的方法中，蚀刻溶液不太可能达到压电膜52A。显着抑制压电膜52A的溶解的情况，实现了制造的压电元件74的特性的提高。

5. 发明授权

US07247975B2 Thin-film piezoelectric element and method of making same 有权
标题翻译：薄膜压电元件及其制造方法
公开(公告)号：US07247975B2
公开(公告)日：2007-07-24
申请号：US11078565
申请日：2005-03-14
申请人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
发明人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： H01L41/08
CPC分类号： H01L41/0471 , H01L41/0477 , H01L41/083 , H01L41/1875 , H01L41/27 , H01L41/316
摘要： Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.
摘要翻译：本发明提供一种能够减少留在电极膜上的氧化膜对元件特性劣化的影响的薄膜压电元件，以及制造该薄膜压电元件的方法。薄膜压电元件以覆盖层叠体的氧化膜的最外层的主要成分为ZrO 2。 ZrO 2的杨氏模量为190GPa，与MgO的杨氏模量245GPa相比，显着低得多。因此，氧化膜对压电膜的位移幅度的减小的影响小于常规薄膜压电元件中残留的MgO薄膜的影响。结果，与传统的薄膜压电元件相比，薄膜压电元件降低了氧化膜对元件特性的降低的影响。

6. 发明申请

US20050212389A1 Thin-film piezoelectric element and method of making same 有权
标题翻译：薄膜压电元件及其制造方法
公开(公告)号：US20050212389A1
公开(公告)日：2005-09-29
申请号：US11078565
申请日：2005-03-14
申请人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
发明人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
IPC分类号： H01L41/083 , H01L41/047 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/313 , H01L41/316
CPC分类号： H01L41/0471 , H01L41/0477 , H01L41/083 , H01L41/1875 , H01L41/27 , H01L41/316
摘要： Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.
摘要翻译：本发明提供一种能够减少留在电极膜上的氧化膜对元件特性劣化的影响的薄膜压电元件，以及制造该薄膜压电元件的方法。薄膜压电元件以覆盖层叠体的氧化膜的最外层的主要成分为ZrO 2。 ZrO 2的杨氏模量为190GPa，与MgO的杨氏模量245GPa相比，显着低得多。因此，氧化膜对压电膜的位移幅度的减小的影响小于常规薄膜压电元件中残留的MgO薄膜的影响。结果，与传统的薄膜压电元件相比，薄膜压电元件降低了氧化膜对元件特性的降低的影响。

7. 发明授权

US08166815B2 Angular velocity sensor element 有权
标题翻译：角速度传感器元件
公开(公告)号：US08166815B2
公开(公告)日：2012-05-01
申请号：US12382274
申请日：2009-03-12
申请人： Kenichi Tochi , Takao Noguchi , Ken Unno , Kazuya Maekawa
发明人： Kenichi Tochi , Takao Noguchi , Ken Unno , Kazuya Maekawa
IPC分类号： G01C19/56
CPC分类号： G01C19/5642
摘要： An angular velocity sensor element is provided which is capable of preventing even transmission of sudden externally-applied vibration to an element portion by absorbing the vibration. An angular velocity sensor element 2 according to the present embodiment has a fixing portion 21 in the form of a frame, an element portion 20 disposed in the frame of the fixing portion 21 and having vibrating arms 21 to 24 in a drive system and a detection system, and a connecting portion 25 formed as a fixed-fixed beam having its both ends connected to the fixing portion 21 and having its intermediate portion connected to the element portion 20.
摘要翻译：提供一种角速度传感器元件，其能够通过吸收振动来防止突然的外部施加的振动到元件部分的传播。根据本实施例的角速度传感器元件2具有框架形式的固定部分21，设置在固定部分21的框架中并且在驱动系统中具有振动臂21至24的元件部分20和检测系统，以及形成为固定梁的连接部分25，其两端连接到固定部分21，并且其中间部分连接到元件部分20。

8. 发明授权

US08056414B2 Angular velocity sensor and angular velocity sensing device 有权
标题翻译：角速度传感器和角速度检测装置
公开(公告)号：US08056414B2
公开(公告)日：2011-11-15
申请号：US12078031
申请日：2008-03-26
申请人： Takao Noguchi , Kenichi Tochi , Ken Unno , Tatsuo Namikawa
发明人： Takao Noguchi , Kenichi Tochi , Ken Unno , Tatsuo Namikawa
IPC分类号： G01P9/04 , H01L41/00
CPC分类号： G01C19/5607
摘要： An angular velocity sensor of a horizontally located type, in which influence of a translational acceleration applied thereto from a lateral direction is readily removed and a fixed portion thereof is easily fixed, is provided. It includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm portion and a lower detection arm portion respectively connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion with the upper detection arm portion in between. The fixed portion includes one or more slits extending at least in a direction intersecting with the extending direction of the upper detection arm portion.
摘要翻译：提供了一种水平定位型的角速度传感器，其中容易地去除从横向施加到其上的平移加速度的影响，并且其固定部分容易固定。它包括固定到壳体的传感器元件支撑部分的顶表面的固定部分，上检测臂部分和下检测臂部分，其分别连接到彼此相对的侧面上的固定部分，并且沿平行于传感器元件支撑部分的顶表面和连接到固定部分的上部振动臂，上部检测臂部分在其间。固定部分包括至少沿与上检测臂部分的延伸方向交叉的方向延伸的一个或多个狭缝。

9. 发明申请

US20090165556A1 Angular velocity sensing element 有权
标题翻译：角速度感测元件
公开(公告)号：US20090165556A1
公开(公告)日：2009-07-02
申请号：US12318329
申请日：2008-12-24
申请人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
发明人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
IPC分类号： G01C19/56
CPC分类号： G01C19/5607
摘要： An angular velocity sensing element is provided, which is able to prevent breakage of an oscillation arm even when an excessively large shock is given. An angular velocity sensing element 2 according to the present embodiment includes oscillation arms 22, 23 and 24 formed of a semiconductor material, and a stopper member provided to limit the oscillation range of the oscillation arms. As such a stopper member, a first stopper member 25 is provided, for example, which limits the oscillation range of the oscillation arms at least within a single plane of the arms. Fixing portions 21, the oscillation arms 22, 23 and 24 and the first stopper member 25 are integrally formed by processing a semiconductor material, such as silicon.
摘要翻译：提供了一种角速度感测元件，其即使在给出过大的冲击时也能够防止振动臂的破损。根据本实施例的角速度感测元件2包括由半导体材料形成的振荡臂22,23和24以及用于限制振荡臂的振荡范围的止动构件。作为这样的止动构件，例如设置有至少在臂的单个平面内限制摆动臂的摆动范围的第一止动构件25。固定部21，摆动臂22,23,24以及第一止动构件25通过加工硅等半导体材料而一体形成。

10. 发明申请

US20100244632A1 Piezoelectric element and gyroscope 有权
标题翻译：压电元件和陀螺仪
公开(公告)号：US20100244632A1
公开(公告)日：2010-09-30
申请号：US12659997
申请日：2010-03-26
申请人： Kazuya Maekawa , Takao Noguchi , Kenichi Tochi , Ken Unno
发明人： Kazuya Maekawa , Takao Noguchi , Kenichi Tochi , Ken Unno
IPC分类号： H01L41/04
CPC分类号： G01C19/5607 , H01L41/0815 , H01L41/1876 , H01L41/316
摘要： A piezoelectric element having a crystal structure that enables a piezoelectric film to be formed in an unstressed state is provided. The piezoelectric film contains an a-axis oriented crystal and a c-axis oriented crystal, where a difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å. The present inventors have newly found that a stress accumulated in the piezoelectric film can be reduced while maintaining favorable piezoelectric properties when a condition that the difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å is satisfied. When the condition is satisfied, the c-axis oriented crystal and the a-axis oriented crystal are properly balanced and as a result crystal particles of the piezoelectric film are closest-packed on its base in an ideal state, which contributes to a reduced stress.
摘要翻译：提供了具有能够使压电膜形成为无应力状态的晶体结构的压电元件。压电膜包含a轴取向晶体和c轴取向晶体，其中a轴取向晶体和c轴取向晶体之间的晶格常数差不大于0.06。本发明人新发现，当a轴取向晶体和c轴取向晶体之间的晶格常数差不大于0.06的条件时，可以在保持良好的压电特性的同时，减小在压电膜中累积的应力 Å满意当满足条件时，c轴取向晶体和a轴取向晶体被适当地平衡，结果在理想状态下，压电膜的晶体颗粒在其基极上最紧密堆积，这有助于减小应力。

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