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1. 发明授权

US5716534A Plasma processing method and plasma etching method 失效
标题翻译：等离子体处理方法和等离子体蚀刻方法
公开(公告)号：US5716534A
公开(公告)日：1998-02-10
申请号：US564621
申请日：1995-11-29
申请人： Hiroshi Tsuchiya , Yoshio Fukasawa , Shuji Mochizuki , Yukio Naito , Kosuke Imafuku
发明人： Hiroshi Tsuchiya , Yoshio Fukasawa , Shuji Mochizuki , Yukio Naito , Kosuke Imafuku
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/3299 , H01J2237/3343
摘要： A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.
摘要翻译：等离子体蚀刻装置包括能够减压设置的处理室。在其中放置半导体晶片的下电极和与下电极相对的上电极设置在处理室中。下电极和上电极分别连接到RF电源。第一和第二RF功率（其相位和功率比被单独控制）可以应用于上电极和下电极。选择包括第一和第二RF功率的频率，功率值和相对相位的参数，以便将蚀刻特性，例如蚀刻速率，蚀刻速率的平面均匀性，蚀刻选择比等设置为预定值。在蚀刻期间，第一和第二RF功率由分离的检测器监测，并通过控制器保持在初始预设值。

2. 发明授权

US6074518A Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US6074518A
公开(公告)日：2000-06-13
申请号：US225010
申请日：1999-01-04
申请人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Hiroshi Tsuchiya , Masayuki Tomoyasu , Yukio Naito , Kazuya Nagaseki , Ryo Nonaka , Keizo Hirose , Yoshio Fukasawa , Akira Koshiishi , Isao Kobayashi
发明人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Hiroshi Tsuchiya , Masayuki Tomoyasu , Yukio Naito , Kazuya Nagaseki , Ryo Nonaka , Keizo Hirose , Yoshio Fukasawa , Akira Koshiishi , Isao Kobayashi
IPC分类号： H01J37/32 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.
摘要翻译：等离子体处理装置包括室，以及上部电极和下部电极，其平行地设置在腔室中以预定间隔彼此相对，用于限定电极之间的等离子体产生区域。被处理物体安装在下电极上。向电极提供RF功率，使得在电极之间产生等离子体，从而对被处理物进行等离子体处理。在室内的等离子体产生区域周围设置圆柱形接地电极，用于将等离子体封装在等离子体产生区域中，并具有用于通过处理气体的多个通孔。

3. 发明授权

US5611655A Vacuum process apparatus and vacuum processing method 失效
标题翻译：真空加工设备和真空处理方法
公开(公告)号：US5611655A
公开(公告)日：1997-03-18
申请号：US582805
申请日：1996-01-04
申请人： Yoshio Fukasawa , Shozo Hosoda , Tatsuya Nakagome , Takashi Tozawa , Koji Suzuki , Yasumasa Ishihara , Minoru Aoyagi , Mahito Kajihara
发明人： Yoshio Fukasawa , Shozo Hosoda , Tatsuya Nakagome , Takashi Tozawa , Koji Suzuki , Yasumasa Ishihara , Minoru Aoyagi , Mahito Kajihara
IPC分类号： B65G49/07 , C23C14/56 , H01L21/00 , H01L21/02
CPC分类号： C23C14/564 , C23C14/568 , H01L21/67017 , H01L21/67196 , Y10S414/139
摘要： A vacuum process apparatus includes a convey chamber having a plurality of loading/unloading ports and an airtight structure kept in a vacuum when a target object is conveyed, at least one preliminary vacuum chamber connected to the convey chamber through a loading/unloading port, a plurality of vacuum process chambers connected to the convey chamber through the loading/unloading ports and each having a vacuum process mechanism, a plurality of gate valves for opening/closing the plurality of loading/unloading ports, and a multi-joint arm member, arranged in the convey chamber, for conveying the target object between the convey chamber and the vacuum process chambers, and between the convey chamber and the preliminary chamber. The convey chamber is evacuated through a bearing for a pivot shaft of the multi-joint arm member.
摘要翻译：真空处理装置包括具有多个装载/卸载端口的输送室和当输送目标物体时保持在真空中的气密结构，至少一个初级真空室通过装载/卸载端口连接到输送室，多个真空处理室，其通过装载/卸载端口连接到输送室，并且每个具有真空处理机构，用于打开/关闭多个装载/卸载端口的多个闸阀，以及多关节臂构件，在传送室中，用于在传送室和真空处理室之间以及在传送室和预备室之间传送目标物体。输送室通过用于多关节臂构件的枢轴的轴承抽真空。

4. 发明授权

US6111984A Method for matching input image with reference image, apparatus for the same, and storage medium storing program for implementing the method 失效
标题翻译：用于将输入图像与参考图像相匹配的方法，用于实现该方法的存储介质存储程序
公开(公告)号：US6111984A
公开(公告)日：2000-08-29
申请号：US9936
申请日：1998-01-21
申请人： Yoshio Fukasawa
发明人： Yoshio Fukasawa
IPC分类号： G06K9/36 , G06K9/64 , G06T7/60 , G06K9/62 , G06K9/46
CPC分类号： G06K9/6206
摘要： Matching between a reference image and an input image is performed without relying on specific elements such as line segments or tables. An edge image is generated from the reference image and divided into small blocks, and search range and search priority of each small block are determined and stored in a storage device. When an input image is input, an edge image thereof is generated. The small blocks in the reference image are retrieved in order of priority, and matching with the input image is judged. When the corresponding position of one small block is determined, the search range and search priority for other small blocks not yet judged for matching are updated on the basis of the determined corresponding position.
摘要翻译：执行参考图像和输入图像之间的匹配，而不依赖于诸如线段或表的特定元件。从参考图像生成边缘图像并将其划分为小块，并且确定每个小块的搜索范围和搜索优先级并将其存储在存储设备中。当输入输入图像时，生成其边缘图像。以优先级的顺序检索参考图像中的小块，并且判断与输入图像的匹配。当确定一个小块的对应位置时，基于所确定的对应位置来更新尚未判断用于匹配的其他小块的搜索范围和搜索优先级。

5. 发明授权

US5314573A Dry etching polysilicon using a bromine-containing gas 失效
标题翻译：使用含溴气体干蚀刻多晶硅
公开(公告)号：US5314573A
公开(公告)日：1994-05-24
申请号：US885855
申请日：1992-05-20
申请人： Fumihiko Higuchi , Yoshio Fukasawa
发明人： Fumihiko Higuchi , Yoshio Fukasawa
IPC分类号： H01L21/3213 , H01L21/306 , B44C1/22
CPC分类号： H01L21/32137
摘要： The present invention provides a dry etching method for achieving a satisfactory anisotropic etching of, for example, a semiconductor wafer, particularly, a polysilicon layer formed on the wafer. In the present invention, a mixed gas comprising a first gas containing Br and a second gas containing a halogen element other than Br, e.g., a mixed gas consisting of a HBr gas and a HCl gas, is introduced into a vacuum chamber. The mixed gas is converted into plasma by applying a high frequency power to an upper electrode 5. The plasma region is irradiated, as desired, with an ultraviolet light. The semiconductor wafer is etched with the plasma. The etching is carried out under optimum conditions. For example, the surface temperature of the semiconductor wafer, i.e., workpiece, is maintained at a level falling within a range of between 70.degree. C. and 120.degree. C. Also, the flow rate ratio of the mixed gas is suitably controlled.
摘要翻译：本发明提供了一种用于实现例如半导体晶片，特别是形成在晶片上的多晶硅层的令人满意的各向异性蚀刻的干蚀刻方法。在本发明中，将包含Br的第一气体和含有Br以外的卤素元素的第二气体（例如由HBr气体和HCl气体构成的混合气体）的混合气体引入真空室。通过向上电极5施加高频电力，将混合气体转换为等离子体。根据需要用紫外线照射等离子体区域。用等离子体蚀刻半导体晶片。蚀刻在最佳条件下进行。例如，半导体晶片即工件的表面温度保持在70℃〜120℃的范围内，适当地控制混合气体的流量比。

6. 发明授权

US08503784B2 Image recognition apparatus, image recognition method, and storage medium recording image recognition program 有权
标题翻译：图像识别装置，图像识别方法和存储介质记录图像识别程序
公开(公告)号：US08503784B2
公开(公告)日：2013-08-06
申请号：US12250302
申请日：2008-10-13
申请人： Hiroshi Tanaka , Yusaku Fujii , Hiroaki Takebe , Yoshinobu Hotta , Akihiro Minagawa , Noriaki Ozawa , Katsuhito Fujimoto , Yoshio Fukasawa , Masaki Inami , Kiichiro Watanabe
发明人： Hiroshi Tanaka , Yusaku Fujii , Hiroaki Takebe , Yoshinobu Hotta , Akihiro Minagawa , Noriaki Ozawa , Katsuhito Fujimoto , Yoshio Fukasawa , Masaki Inami , Kiichiro Watanabe
IPC分类号： G06K9/00
CPC分类号： G06K9/033 , G06K9/726 , G06K2209/01
摘要： An image recognition apparatus recognizes the correspondence between character strings and logical elements composing a logical structure in an image in which the character strings are described as the logical elements to recognize each logical element. The image recognition apparatus includes outputting means for outputting the recognized logical elements when the correspondence is recognized or re-recognized; first determining means for determining a certain logical element to be correct when input of a determination request to determine the logical element is received from a user; second determining means for determining the correctness of all the logical elements output before the logical element determined by the first determining means and is positioned according to confirmation by the user; and re-recognizing means for re-recognizing the correspondence between logical elements that have not been determined to be correct and the character strings on the basis of the determination content for each logical element.
摘要翻译：图像识别装置识别字符串和组成逻辑结构的逻辑元件之间的对应关系，其中描述了字符串作为识别每个逻辑元件的逻辑元件的图像。所述图像识别装置包括：输出装置，用于当所述对应被识别或重新识别时输出所识别的逻辑元件; 第一确定装置，用于当从用户接收到确定逻辑元件的确定请求的输入时，确定某个逻辑元件是正确的; 第二确定装置，用于确定在由第一确定装置确定的逻辑元件之前输出的所有逻辑元件的正确性，并且根据用户的确认定位; 以及重新识别装置，用于基于每个逻辑元素的确定内容来重新识别尚未被确定为正确的逻辑元素与字符串之间的对应关系。

7. 发明申请

US20090110282A1 IMAGE RECOGNITION APPARATUS, IMAGE RECOGNITION METHOD, AND STORAGE MEDIUM RECORDING IMAGE RECOGNITION PROGRAM 有权
标题翻译：图像识别装置，图像识别方法和存储媒体记录图像识别程序
公开(公告)号：US20090110282A1
公开(公告)日：2009-04-30
申请号：US12250302
申请日：2008-10-13
申请人： Hiroshi Tanaka , Yusaku Fujii , Hiroaki Takebe , Yoshinobu Hotta , Akihiro Minagawa , Noriaki Ozawa , Katsuhito Fujimoto , Yoshio Fukasawa , Masaki Inami , Kiichiro Watanabe
发明人： Hiroshi Tanaka , Yusaku Fujii , Hiroaki Takebe , Yoshinobu Hotta , Akihiro Minagawa , Noriaki Ozawa , Katsuhito Fujimoto , Yoshio Fukasawa , Masaki Inami , Kiichiro Watanabe
IPC分类号： G06K9/00
CPC分类号： G06K9/033 , G06K9/726 , G06K2209/01
摘要： An image recognition apparatus recognizes the correspondence between character strings and logical elements composing a logical structure in an image in which the character strings are described as the logical elements to recognize each logical element. The image recognition apparatus includes outputting means for outputting the recognized logical elements when the correspondence is recognized or re-recognized; first determining means for determining a certain logical element to be correct when input of a determination request to determine the logical element is received from a user; second determining means for determining the correctness of all the logical elements output before the logical element determined by the first determining means and is positioned according to confirmation by the user; and re-recognizing means for re-recognizing the correspondence between logical elements that have not been determined to be correct and the character strings on the basis of the determination content for each logical element.
摘要翻译：图像识别装置识别字符串和组成逻辑结构的逻辑元件之间的对应关系，其中描述了字符串作为识别每个逻辑元件的逻辑元件的图像。所述图像识别装置包括：输出装置，用于当所述对应被识别或重新识别时输出所识别的逻辑元件; 第一确定装置，用于当从用户接收到确定逻辑元件的确定请求的输入时，确定某个逻辑元件是正确的; 第二确定装置，用于确定在由第一确定装置确定的逻辑元件之前输出的所有逻辑元件的正确性，并且根据用户的确认定位; 以及重新识别装置，用于基于每个逻辑元素的确定内容来重新识别尚未被确定为正确的逻辑元素与字符串之间的对应关系。

8. 发明授权

US5560804A Etching method for silicon containing layer 失效
标题翻译：含硅层的蚀刻方法
公开(公告)号：US5560804A
公开(公告)日：1996-10-01
申请号：US380325
申请日：1995-01-30
申请人： Fumihiko Higuchi , Yoshio Fukasawa
发明人： Fumihiko Higuchi , Yoshio Fukasawa
IPC分类号： H01L21/3213 , H01L21/00
CPC分类号： H01L21/32137
摘要： In plasma-etching a polysilicon layer of a semiconductor wafer where the polysilicon layer is formed on an SiO.sub.2 film, plasma of a processing gas including a halogen element containing gas and a gas containing oxygen or nitrogen is generated, and a predetermined portion of the polysilicon layer is selectively exposed in plasma, thereby etching the portion.
摘要翻译：在等离子体蚀刻在SiO 2膜上形成多晶硅层的半导体晶片的多晶硅层中，产生包含含有卤素元素的气体和含有氧或氮的气体的处理气体的等离子体，并且多晶硅的预定部分层被选择性地暴露在等离子体中，从而蚀刻该部分。

9. 发明授权

US5246529A Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US5246529A
公开(公告)日：1993-09-21
申请号：US755441
申请日：1991-09-05
申请人： Yoshio Fukasawa , Kenji Momose
发明人： Yoshio Fukasawa , Kenji Momose
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/32321
摘要： A workpiece is etched with a plasma. First, a chamber is provided in which a pair of electrodes are arranged parallel to each other at a distance. The electrodes define a plasma generation area therebetween. The workpiece is arranged in the chamber. The chamber is evacuated, and a desired plasma generation gas is introduced into the plasma generation area. Light having a wavelength of not more than 436 nm is radiated onto the gas in the plasma generation area for a predetermined period of time. Then, a high-frequency power is applied across the electrodes to generate a plasma from the plasma generation gas. The workpiece is etched with the generated plasma.

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