专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06932504B2 Heated self-detecting type cantilever for atomic force microscope 有权
标题翻译：原子力显微镜加热自检型悬臂
公开(公告)号：US06932504B2
公开(公告)日：2005-08-23
申请号：US10395683
申请日：2003-03-24
申请人： Hiroshi Takahashi , Yoshiharu Shirakawabe , Tadashi Arai
发明人： Hiroshi Takahashi , Yoshiharu Shirakawabe , Tadashi Arai
IPC分类号： G01K7/02 , G01B7/16 , G01K1/18 , G01Q60/00 , G01Q60/36 , G01Q60/38 , G01B7/28
CPC分类号： G01Q60/58 , G01K1/18 , G01Q20/04 , Y10S977/867
摘要： A self-detecting type cantilever for an atomic force microscope (AFM) has an electro-flexural conversion element for converting a flexural amount of the cantilever into an electric current or voltage, a temperature measurement element disposed at a front end portion of the cantilever for measuring a temperature, and a heating element disposed at the front end portion of the cantilever for heating the temperature measurement element. The temperature measurement element and the heating element are superposed with each other on a main face of the cantilever via an electrical insulating layer. As a result, even if the amount of electric energy supplied to the heating element is reduced, it is possible to effectively supply an amount of heat necessary for measurement to the temperature measurement element. Therefore, by minimizing the heat to be supplied to a sample and the cantilever, the respondency of measurement is improved and temperature measurement can be performed with a high degree of accuracy.
摘要翻译：用于原子力显微镜（AFM）的自检型悬臂具有用于将悬臂的弯曲量转换为电流或电压的电 - 弯曲转换元件，设置在悬臂的前端部的温度测量元件，测量温度，以及设置在悬臂前端部分的加热元件，用于加热温度测量元件。温度测量元件和加热元件经由电绝缘层彼此重叠在悬臂的主面上。结果，即使供给到加热元件的电能量减少，也可以有效地向测量元件供给测量所需的热量。因此，通过将供给到样品和悬臂的热量最小化，可以提高测量的响应度，并且可以以高精度进行温度测量。

2. 发明申请

US20060011467A1 Method of manufacturing the multi-tip probe, a multi-tip probe, and surface characteristic analysis apparatus 审中-公开
标题翻译：多尖头探针的制造方法，多头探针，表面特性分析装置
公开(公告)号：US20060011467A1
公开(公告)日：2006-01-19
申请号：US11230901
申请日：2005-09-20
申请人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
发明人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： G01Q70/16 , G01N23/00 , G01N23/225 , G01Q70/06 , G01Q70/12 , G01R3/00 , Y10T29/49007
摘要： In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
摘要翻译：为了建立能够制造具有亚微米间隔的多尖端探针并提供这种微观多尖头探针的加工技术，提供了一种用于半导体器件等的最外表面分析装置，其具有使得能够进行定位的功能使用这种显微多头探针在极小区域的电测量中对测量没有影响，并且提供了使用光刻技术制造形成有多个电极3的悬臂1的步骤，以及通过溅射或使用聚焦的带电粒子束或使用CVD气化辅助蚀刻悬臂1的远端来形成6分钟的间距的微观电极。

3. 发明授权

US06953519B2 Method of manufacturing the multi-tip probe, a multi-tip probe, and surface characteristic analysis apparatus 有权
标题翻译：多尖头探针的制造方法，多头探针，表面特性分析装置
公开(公告)号：US06953519B2
公开(公告)日：2005-10-11
申请号：US10651526
申请日：2003-08-29
申请人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
发明人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
IPC分类号： G01Q10/04 , G01Q20/04 , G01Q60/10 , G01Q60/16 , G01Q60/24 , G01Q60/32 , G01Q60/38 , G01Q70/06 , G01R1/073 , G01R3/00 , H01L21/66 , C23C14/32 , C23F1/00
CPC分类号： G01Q70/16 , G01N23/00 , G01N23/225 , G01Q70/06 , G01Q70/12 , G01R3/00 , Y10T29/49007
摘要： In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
摘要翻译：为了建立能够制造具有亚微米间隔的多尖端探针并提供这种微观多尖头探针的加工技术，提供了一种用于半导体器件等的最外表面分析装置，其具有使得能够进行定位的功能使用这种显微多头探针在极小区域的电测量中对测量没有影响，并且提供了使用光刻技术制造形成有多个电极3的悬臂1的步骤，以及通过溅射或使用聚焦的带电粒子束或使用CVD气化辅助蚀刻悬臂1的远端来形成6分钟的间距的微观电极。

4. 发明申请

US20060011830A1 Method of manufacturing the multi-tip probe, a multi-tip probe, and surface characteristic analysis apparatus 有权
标题翻译：多尖头探针的制造方法，多头探针，表面特性分析装置
公开(公告)号：US20060011830A1
公开(公告)日：2006-01-19
申请号：US11230904
申请日：2005-09-20
申请人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
发明人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
IPC分类号： G01N23/00
CPC分类号： G01Q70/16 , G01N23/00 , G01N23/225 , G01Q70/06 , G01Q70/12 , G01R3/00 , Y10T29/49007
摘要： In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc provided with a function for enabling positioning to be performed in, such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
摘要翻译：为了建立能够制造具有亚微米间隔的多尖头探针并提供这种微观多尖头探针的加工技术，提供了一种用于半导体器件等的最外表面分析装置，其具有使得能够在使用这种显微多头探针在极小区域的电气测量中对测量没有影响的方式，并且提供了使用光刻技术制造形成有多个电极3的悬臂1的步骤，以及通过溅射或使用聚焦的带电粒子束或使用CVD气化辅助蚀刻悬臂1的远端来形成6分钟的间距的微观电极。

5. 发明授权

US06469293B1 Multiprobe and scanning probe microscope 失效
标题翻译：多功能和扫描探针显微镜
公开(公告)号：US06469293B1
公开(公告)日：2002-10-22
申请号：US09514096
申请日：2000-02-28
申请人： Nobuhiro Shimizu , Hiroshi Takahashi , Yoshiharu Shirakawabe , Chiaki Yasumuro , Tadashi Arai
发明人： Nobuhiro Shimizu , Hiroshi Takahashi , Yoshiharu Shirakawabe , Chiaki Yasumuro , Tadashi Arai
IPC分类号： H01J516
CPC分类号： G01Q60/38 , G01Q20/04 , G01Q70/06 , Y10S977/874
摘要： A multiprobe device is provided for a scanning probe instrument and has a plurality of individually-selectable probe members for conducting scanning probe operations. The multiprobe has a plurality of cantilever probes supported by a support member. Each of the cantilevers is individually-selectable for use in conducting scanning probe operations, and each has a different resonance frequency from the others. In a preferred embodiment, portions of the respective cantilevers that are brought into contact with a sample to conduct scanning probe operations are arranged in a substantially linear configuration. A given one of the cantilevers is selected by vibrating the multiprobe at the resonance frequency of the given cantilever.
摘要翻译：提供了一种用于扫描探针仪器的多探头装置，并具有用于进行扫描探针操作的多个可单独选择的探针部件。多功能探头具有由支撑构件支撑的多个悬臂探针。每个悬臂可单独选择用于进行扫描探针操作，并且每个具有与其他谐振频率不同的谐振频率。在优选实施例中，与样品接触以进行扫描探针操作的各个悬臂的部分被布置成基本线性的构造。通过在给定悬臂的共振频率下振动多重探针来选择给定的一个悬臂。

6. 发明授权

US06422069B1 Self-exciting and self-detecting probe and scanning probe apparatus 失效
标题翻译：自激和自检探头和扫描探头装置
公开(公告)号：US06422069B1
公开(公告)日：2002-07-23
申请号：US09526148
申请日：2000-03-15
申请人： Nobuhiro Shimizu , Yoshiharu Shirakawabe , Hiroshi Takahashi , Chiaki Yasumuro , Tadashi Arai
发明人： Nobuhiro Shimizu , Yoshiharu Shirakawabe , Hiroshi Takahashi , Chiaki Yasumuro , Tadashi Arai
IPC分类号： G01B528
CPC分类号： G01Q10/045 , G01Q20/04 , Y10S977/873
摘要： A scanning probe apparatus and a self-exciting cantilever probe therefor are provided for measuring a characteristic of a sample by scanning a lever of the probe across the sample surface. The probe has a deflectable lever extending from a base and formed integrally therewith, and a resistive body provided on the lever to excite the lever in response to a periodic bias signal applied to the resistive body. In addition, the resistive body has a resistance value that varies in response to deflection of the lever so that the resistance of the resistive body may be monitored to detect deflection of the lever.
摘要翻译：提供扫描探针装置和自激式悬臂探针，用于通过将探针的杆扫过样品表面来测量样品的特性。探针具有从基座延伸并与其一体形成的可偏转杆，以及设置在杠杆上的电阻体，以响应于施加到电阻体的周期性偏置信号来激励杠杆。此外，电阻体具有响应于杠杆的偏转而变化的电阻值，使得可以监视电阻体的电阻以检测杠杆的偏转。

7. 发明授权

US07337656B2 Surface characteristic analysis apparatus 有权
标题翻译：表面特性分析仪
公开(公告)号：US07337656B2
公开(公告)日：2008-03-04
申请号：US11230904
申请日：2005-09-20
申请人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
发明人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
IPC分类号： G01B5/28 , G01N13/16 , G12B21/08 , G12B21/22
CPC分类号： G01Q70/16 , G01N23/00 , G01N23/225 , G01Q70/06 , G01Q70/12 , G01R3/00 , Y10T29/49007
摘要： In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
摘要翻译：为了建立能够制造具有亚微米间隔的多尖端探针并提供这种微观多尖头探针的加工技术，提供了一种用于半导体器件等的最外表面分析装置，其具有使得能够进行定位的功能使用这种显微多头探针在极小区域的电测量中对测量没有影响，并且提供了使用光刻技术制造形成有多个电极3的悬臂1的步骤，以及通过溅射或使用聚焦的带电粒子束或使用CVD气化辅助蚀刻悬臂1的远端来形成6分钟的间距的微观电极。

8. 发明申请

US20070278405A1 MULTI-TIP SURFACE CANTILEVER PROBE 审中-公开
标题翻译：多点表面CANTILEVER探头
公开(公告)号：US20070278405A1
公开(公告)日：2007-12-06
申请号：US11809014
申请日：2007-05-30
申请人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
发明人： Yoshiharu Shirakawabe , Hiroshi Takahashi , Tadashi Arai
IPC分类号： G01N23/00
CPC分类号： G01Q70/16 , G01N23/00 , G01N23/225 , G01Q70/06 , G01Q70/12 , G01R3/00 , Y10T29/49007
摘要： In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements, at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
摘要翻译：为了建立能够制造具有亚微米间隔的多尖端探针并提供这种微观多尖头探针的加工技术，提供了一种用于半导体器件等的最外表面分析装置，其具有使得能够进行定位的功能以这样的方式，在使用这种微型多尖头探针的极小区域上对电测量中的测量没有影响，并且提供了使用光刻技术制造形成有多个电极3的悬臂1的步骤，并通过溅射或使用聚焦的带电粒子束或使用CVD气化辅助蚀刻悬臂1的远端来形成间隔6分钟的微观电极。

9. 发明授权

US06388252B1 Self-detecting type of SPM probe and SPM device 有权
标题翻译：自检型SPM探头和SPM装置
公开(公告)号：US06388252B1
公开(公告)日：2002-05-14
申请号：US09197584
申请日：1998-11-19
申请人： Hiroshi Takahashi , Yoshiharu Shirakawabe , Nobuhiro Shimizu , Michel Despont
发明人： Hiroshi Takahashi , Yoshiharu Shirakawabe , Nobuhiro Shimizu , Michel Despont
IPC分类号： G01N2300
CPC分类号： G01Q60/38 , G01Q20/04 , G01Q70/06 , Y10S977/873
摘要： A self-detecting type of SPM probe can eliminate influences of a leak current between piezo-resistors each other, between another piezo-resistors opposite to each other, or between the piezo-resistor and the other one, or of a carrier generated by irradiation of light thereto over the piezo-resistors by forming impurity diffusion layers each consisting of a conductive type (n− well regions) reverse to a conductive type of a semiconductor substrate (p-type silicon substrate) on each interface between each of the piezo-resistors and the semiconductor substrate respectively to insulate the elements from one another.
摘要翻译： SPM探头的自检型可以消除压电电阻之间，彼此相对的另一个压电电阻之间或压敏电阻与另一压电电阻之间的泄漏电流的影响，或消除由辐射产生的载体通过在每个压电元件之间的每个界面上形成杂质扩散层，每个杂质扩散层由与导电类型的半导体衬底（p型硅衬底）的导电类型相反的导电类型（n-阱区）构成，电阻器和半导体衬底，以使元件彼此绝缘。

10. 发明授权

US06211540B1 Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor 有权
标题翻译：半导体应变传感器和扫描探针显微镜使用半导体应变传感器
公开(公告)号：US06211540B1
公开(公告)日：2001-04-03
申请号：US09173035
申请日：1998-10-15
申请人： Hiroshi Takahashi , Nobuhiro Shimizu , Yoshiharu Shirakawabe , Susumu Ichihara , Michel Despont
发明人： Hiroshi Takahashi , Nobuhiro Shimizu , Yoshiharu Shirakawabe , Susumu Ichihara , Michel Despont
IPC分类号： H01L2982
CPC分类号： G01Q20/04 , G01Q70/16 , Y10S977/873
摘要： A semiconductor strain sensor comprises a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end. A Schottky junction is disposed on the surface portion of the semiconductor cantilever probe and is positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion. The amount of displacement of the free end of the cantilever probe is detected on the basis of a change in the electrical characteristic of the Schottky junction.
摘要翻译：半导体应变传感器包括具有自由端的半导体悬臂探针和由于自由端位移而发生变形的表面部分。肖特基结设置在半导体悬臂探针的表面部分上并且被定位成响应于表面部分的变形而经历电特性的变化。基于肖特基结的电特性的变化来检测悬臂探头的自由端的位移量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式